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    • 1. 发明授权
    • Processing of materials for uniform field emission
    • 加工用于均匀场发射的材料
    • US5857882A
    • 1999-01-12
    • US607532
    • 1996-02-27
    • Lawrence S. PamThomas E. FelterAlec TalinDouglas OhlbergCiaran FoxSung Han
    • Lawrence S. PamThomas E. FelterAlec TalinDouglas OhlbergCiaran FoxSung Han
    • H01J9/02H01J9/44
    • H01J9/025H01J2201/30457
    • This method produces a field emitter material having a uniform electron emitting surface and a low turn-on voltage. Field emitter materials having uniform electron emitting surfaces as large as 1 square meter and turn-on voltages as low as 16V/.mu.m can be produced from films of electron emitting materials such as polycrystalline diamond, diamond-like carbon, graphite and amorphous carbon by the method of the present invention. The process involves conditioning the surface of a field emitter material by applying an electric field to the surface, preferably by scanning the surface of the field emitter material with an electrode maintained at a fixed distance of at least 3 .mu.m above the surface of the field emitter material and at a voltage of at least 500V. In order to enhance the uniformity of electron emission the step of conditioning can be preceeded by ion implanting carbon, nitrogen, argon, oxygen or hydrogen into the surface layers of the field emitter material.
    • 该方法产生具有均匀的电子发射表面和低导通电压的场致发射材料。 具有大至1平方米的均匀电子发射表面和低至16V /μm的导通电压的场致发射体材料可以通过诸如多晶金刚石,类金刚石碳,石墨和无定形碳等电子发射材料的薄膜由 本发明的方法。 该过程包括通过向表面施加电场来调节场致发射材料的表面,优选地通过用保持在场的表面上至少3μm的固定距离的电极扫描场致发射体材料的表面 发射极材料和至少500V的电压。 为了提高电子发射的均匀性,调节步骤可以先将碳,氮,氩,氧或氢离子注入场致发射体材料的表面层。