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1. 发明申请

US20170092851A1 MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20170092851A1
公开(公告)日：2017-03-30
申请号：US15244344
申请日：2016-08-23
申请人： Shinhee HAN , Kiseok SUH , KyungTae NAM , Woojin KIM , Kwangil SHIN , Minkyoung JOO , Gwanhyeob KOH
发明人： Shinhee HAN , Kiseok SUH , KyungTae NAM , Woojin KIM , Kwangil SHIN , Minkyoung JOO , Gwanhyeob KOH
IPC分类号： H01L43/12 , G11C11/16 , H01L43/10 , H01L27/22 , H01L43/02 , H01L43/08
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/226 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.

2. 发明授权

US09490298B2 Magnetic memory devices having a perpendicular magnetic tunnel junction 有权
标题翻译：具有垂直磁隧道结的磁存储器件
公开(公告)号：US09490298B2
公开(公告)日：2016-11-08
申请号：US14264049
申请日：2014-04-28
申请人： Woojin Kim , Ki Woong Kim , Woo Chang Lim
发明人： Woojin Kim , Ki Woong Kim , Woo Chang Lim
IPC分类号： H01L29/82 , H01L21/8239 , H01L27/105 , H01L27/22 , H01L43/08 , G11C11/16 , H01F10/32
CPC分类号： H01L27/222 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F10/3286 , H01L27/224 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetic memory device may include a free magnetic structure and a reference magnetic structure that are separated from each other by a tunnel barrier. The free magnetic structure may include an exchange-coupling layer, and first and second free layers that are separated from each other by the exchange-coupling layer. The first free layer may be provided between the second free layer and the tunnel barrier. A thickness of the first free layer may be greater than a first maximum anisotropy thickness, being the thickness at which the first free layer has maximum perpendicular anisotropy. A thickness of the second free layer may be smaller than a second maximum anisotropy thickness, being the thickness at which the second free layer has maximum perpendicular anisotropy. A magnetic tunnel junction having two free layers with different thicknesses can enable a magnetic memory device that has increased MR ratio and reduced switching current.
摘要翻译：磁存储器件可以包括通过隧道势垒彼此分离的自由磁结构和参考磁性结构。自由磁结构可以包括交换耦合层，以及通过交换耦合层彼此分离的第一和第二自由层。第一自由层可以设置在第二自由层和隧道势垒之间。第一自由层的厚度可以大于第一最大各向异性厚度，即第一自由层具有最大垂直各向异性的厚度。第二自由层的厚度可以小于第二最大各向异性厚度，即第二自由层具有最大垂直各向异性的厚度。具有两个具有不同厚度的自由层的磁性隧道结可实现具有增加的MR比和降低的开关电流的磁存储器件。

3. 发明授权

US09424904B2 Magnetic memory devices including oxide multiferroic material 有权
标题翻译：磁记忆装置包括氧化物多铁性材料
公开(公告)号：US09424904B2
公开(公告)日：2016-08-23
申请号：US14526489
申请日：2014-10-28
申请人： Kilho Lee , Sangyong Kim , Woojin Kim , KyungTae Nam
发明人： Kilho Lee , Sangyong Kim , Woojin Kim , KyungTae Nam
IPC分类号： G11C11/02 , G11C11/16 , G11C11/22
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/221
摘要： A magnetic memory device is provided. The magnetic memory device includes a plurality of variable resistance devices connected to a word line, and a plurality of bit lines, each of which provides an electrical pathway between a corresponding one of the variable resistance devices and a read and write circuit. Each of the variable resistance devices includes a free layer and a pinned layer spaced apart from each other and having a tunnel barrier interposed therebetween, an assistant layer spaced apart from the tunnel barrier and having the free layer interposed therebetween, and an exchange coupling layer arranged between the free layer and the assistant layer. The exchange coupling layer has an electric polarization, which results from its ferroelectric property, and having a direction that can be changed by a voltage applied to the corresponding one of the bit lines.
摘要翻译：提供磁存储器件。磁存储器件包括连接到字线的多个可变电阻器件和多个位线，每个位线提供相应的一个可变电阻器件与读写电路之间的电路径。每个可变电阻装置包括自由层和钉扎层，彼此间隔开并具有插入其间的隧道势垒，辅助层与隧道势垒间隔开并且具有插入其间的自由层，并且布置有交换耦合层在自由层和辅助层之间。交换耦合层具有由其铁电性质产生的电极化，并且具有可以通过施加到相应的一个位线的电压而改变的方向。

4. 发明授权

US09318695B2 Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern 有权
公开(公告)号：US09318695B2
公开(公告)日：2016-04-19
申请号：US14614724
申请日：2015-02-05
申请人： Sechung Oh , Jangeun Lee , Woojin Kim , Heeju Shin
发明人： Sechung Oh , Jangeun Lee , Woojin Kim , Heeju Shin
IPC分类号： H01L43/02 , H01L27/22 , H01L43/08 , H01L43/12 , H01L43/10
CPC分类号： H01L43/02 , G11C11/161 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.

5. 发明授权

US09048412B2 Magnetic memory devices including magnetic layers separated by tunnel barriers 有权
标题翻译：磁存储器件包括由隧道屏障隔开的磁性层
公开(公告)号：US09048412B2
公开(公告)日：2015-06-02
申请号：US14206053
申请日：2014-03-12
申请人： Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
发明人： Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
IPC分类号： H01L29/82 , H01L43/02 , B82Y25/00 , G11C11/16 , H01F10/32 , H01L43/08 , H01L43/10 , H01F10/12
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10
摘要： A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.
摘要翻译：磁存储器件可以包括第一垂直磁性层，第一垂直磁性层上的非磁性层和非磁性层上的第一结磁性层，其中非磁性层位于第一垂直磁性层之间和第一结磁性层。隧道势垒可以在第一结磁性层上，其中第一结磁性层位于非磁性层和隧道势垒之间。第二结磁性层可以在隧道势垒上，其中隧道势垒在第一和第二结磁层之间，第二垂直磁性层可以在第二结磁性层上，第二结磁性层位于隧道势垒之间和第二垂直磁性层。

6. 发明申请

US20150115380A1 MAGNETIC MEMORY DEVICE 审中-公开
标题翻译：磁记忆装置
公开(公告)号：US20150115380A1
公开(公告)日：2015-04-30
申请号：US14583831
申请日：2014-12-29
申请人： Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
发明人： Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
IPC分类号： H01L43/10 , H01L43/02
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
摘要： A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
摘要翻译：提供磁存储器件。所述磁存储器件包括：衬底上的第一垂直磁性层和第二垂直磁性层，所述第一垂直磁性层和所述第二垂直磁性层之间的隧道势垒层，以及位于所述第一垂直磁性层之间的交换耦合层，第一垂直磁性层和第一垂直磁性层的第二子层。

7. 发明授权

US08987850B2 Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern 有权
标题翻译：磁记忆体装置具有均匀的垂直非磁性富集反相增强图案
公开(公告)号：US08987850B2
公开(公告)日：2015-03-24
申请号：US14196666
申请日：2014-03-04
申请人： Sechung Oh , Jangeun Lee , Woojin Kim , Heeju Shin
发明人： Sechung Oh , Jangeun Lee , Woojin Kim , Heeju Shin
IPC分类号： H01L29/82 , H01L43/00 , H01L43/02 , H01L43/08 , H01L43/12
CPC分类号： H01L43/02 , G11C11/161 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.
摘要翻译：提供了磁存储器件，电子系统和包括其的存储卡，其制造方法以及控制磁性图案的磁化方向的方法。在磁存储器件中，不平行于自由图案的一个表面的原子磁矩在自由图案中增加。因此，可以减小磁存储器件的临界电流密度，使得磁存储器件的功耗被降低或最小化，和/或磁存储器件被改进或优化以达到更高的集成度。

8. 发明授权

US08648434B2 Magnetic memory devices 有权
标题翻译：磁存储器件
公开(公告)号：US08648434B2
公开(公告)日：2014-02-11
申请号：US13236888
申请日：2011-09-20
申请人： Woojin Kim , Jangeun Lee , Sechung Oh , Younghyun Kim , Sukhun Choi , Woochang Lim
发明人： Woojin Kim , Jangeun Lee , Sechung Oh , Younghyun Kim , Sukhun Choi , Woochang Lim
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , G11C11/02 , G11C11/16 , G11C11/1675 , H01L27/224 , H01L43/08
摘要： A magnetic memory device includes a magnetic pattern, a reference pattern, a tunnel barrier pattern interposed between the magnetic pattern and the reference pattern, and at least one magnetic segment disposed inside the magnetic pattern. The magnetic segment(s) is/are of magnetic material whose direction of magnetization has at least a component which lies in a plane perpendicular to the magnetization direction of the magnetic pattern.
摘要翻译：磁存储器件包括磁图案，参考图案，介于磁图案和参考图案之间的隧道势垒图案，以及设置在磁图案内的至少一个磁段。磁性部分是磁性材料，其磁化方向具有至少一个与磁性图案的磁化方向垂直的平面的分量。

9. 发明授权

US08575667B2 Magnetic memory devices with thin conductive bridges 有权
标题翻译：具有薄导电桥的磁存储器件
公开(公告)号：US08575667B2
公开(公告)日：2013-11-05
申请号：US13469979
申请日：2012-05-11
申请人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
发明人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
IPC分类号： H01L21/02
CPC分类号： H01L43/12
摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.
摘要翻译：磁存储器件包括在衬底上的自由层和引导层。绝缘层介于自由层和引导层之间。至少一个导电桥通过绝缘层并电连接自由层和引导层。可以在引导层和绝缘层之间插入扩散阻挡层。该装置还可以包括在与绝缘层相对的自由层的一侧上具有固定的磁化方向的参考层和参考层与自由层之间的隧道势垒。还描述了相关的制造方法。

10. 发明授权

US08405173B2 Magnetic memory devices 有权
标题翻译：磁存储器件
公开(公告)号：US08405173B2
公开(公告)日：2013-03-26
申请号：US13159236
申请日：2011-06-13
申请人： Woojin Kim , Sechung Oh , Jangeun Lee , Jeahyoung Lee , Junho Jeong , Woo Chang Lim
发明人： Woojin Kim , Sechung Oh , Jangeun Lee , Jeahyoung Lee , Junho Jeong , Woo Chang Lim
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/10
摘要： A magnetic memory device includes a reference magnetic layer having a fixed magnetization direction, a tunnel barrier layer on the reference magnetic layer, a free layer having a variable magnetization direction on the tunnel barrier layer opposite the reference magnetic layer, and a magnetization reversal auxiliary layer on the free layer. The magnetization reversal auxiliary layer has a fixed magnetization direction that is substantially perpendicular to a plane along an interface between the tunnel barrier layer and the reference layer. The magnetization reversal auxiliary layer may be directly on the free layer, or an exchange coupling control layer may be provided between the magnetization reversal auxiliary layer and the free layer.
摘要翻译：一种磁存储器件包括具有固定的磁化方向的参考磁性层，参考磁性层上的隧道势垒层，在与参考磁性层相对的隧道势垒层上具有可变的磁化方向的自由层和磁化反转辅助层在自由层上。磁化反转辅助层具有固定的磁化方向，其基本上垂直于沿着隧道势垒层和参考层之间的界面的平面。磁化反转辅助层可以直接在自由层上，或者可以在磁化反转辅助层和自由层之间提供交换耦合控制层。

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