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1. 发明申请

US20170062327A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20170062327A1
公开(公告)日：2017-03-02
申请号：US15191558
申请日：2016-06-24
申请人： Kyoung-hoon KIM , Woo-sung YANG , Jee-hoon HWANG
发明人： Kyoung-hoon KIM , Woo-sung YANG , Jee-hoon HWANG
IPC分类号： H01L23/528 , H01L21/321 , H01L21/311 , H01L21/033 , H01L21/768
CPC分类号： H01L23/528 , H01L21/0332 , H01L21/0337 , H01L21/31144 , H01L21/3212 , H01L21/32139 , H01L21/76838 , H01L21/7684 , H01L21/76892 , H01L27/11517 , H01L27/11563 , H01L27/11582 , H01L28/00
摘要： A semiconductor device includes a plurality of line patterns formed apart from one another on a substrate, the plurality of line patterns having a first width and extending parallel to one another in a first direction. A first line pattern of the plurality of line patterns may include a wider portion having a second width in a second direction perpendicular to the first direction that is greater than the first width. One or more second line patterns may be located adjacent to the first line pattern and include a conformal portion conformally formed about the wider portion of the first line pattern. One or more third line patterns may be located adjacent to the second line pattern and include an end portion near the conformal portion of the one or more second line pattern.
摘要翻译：半导体器件包括在衬底上彼此分开形成的多个线图案，多个线图案具有第一宽度并且在第一方向上彼此平行延伸。多个线图案的第一线图案可以包括在垂直于大于第一宽度的第一方向的第二方向上具有第二宽度的较宽部分。可以将一个或多个第二线图案定位成与第一线图案相邻，并且包括围绕第一线图案的较宽部分共形地形成的共形部分。一个或多个第三线图案可以位于与第二线图案相邻并且包括在一个或多个第二线图案的保形部分附近的端部。

2. 发明申请

US20130051596A1 DISPLAY APPARATUS 审中-公开
标题翻译：显示设备
公开(公告)号：US20130051596A1
公开(公告)日：2013-02-28
申请号：US13594054
申请日：2012-08-24
申请人： Kyu-eun PARK , Kyoung-hoon KIM , Ji-gwang KIM , Si-myoung OH
发明人： Kyu-eun PARK , Kyoung-hoon KIM , Ji-gwang KIM , Si-myoung OH
IPC分类号： H04R1/02
CPC分类号： G06F1/1605
摘要： A display apparatus includes a base; a stand which extends from the base; and a display body which comprises a cover frame detachably mounted on one end portion of the stand, a display unit accommodated in the cover frame and configured to display images, and a plurality of speakers installed on the cover frame and configured to output sounds corresponding to a plurality of audio channels. A first speaker of the plurality of speakers is disposed at a central position of a lower side of the cover frame facing the base among four sides of the cover frame and perpendicular to an image display side of the display unit, projecting toward the base.
摘要翻译：显示装置包括基座; 从基座延伸的立场; 以及显示体，其包括可拆卸地安装在所述支架的一个端部上的盖框架，容纳在所述盖框架中并被配置为显示图像的显示单元，以及安装在所述盖框架上的多个扬声器，多个音频通道。所述多个扬声器的第一扬声器设置在所述盖框架的下侧面朝向所述底座的所述盖框架的四个侧面中的垂直于所述显示单元的图像显示侧的中心位置，朝向所述底座突出。

3. 发明申请

US20180053768A1 VERTICAL MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20180053768A1
公开(公告)日：2018-02-22
申请号：US15486681
申请日：2017-04-13
申请人： Kyoung-hoon KIM , Hong-soo KIM
发明人： Kyoung-hoon KIM , Hong-soo KIM
IPC分类号： H01L27/105 , H01L23/528 , H01L29/78 , G11C16/28 , G11C16/08
CPC分类号： H01L27/1052 , G11C16/0483 , G11C16/08 , G11C16/28 , H01L23/5283 , H01L27/11565 , H01L27/11573 , H01L27/11575 , H01L27/11582 , H01L29/7827
摘要： A vertical memory device includes a substrate with a cell array region, a word line contact region, and a peripheral circuit region, gate electrodes parallel to the substrate in the cell array and word line contact regions, the gate electrodes being stacked and spaced apart in a direction perpendicular to the substrate, a channel structure through the gate electrodes in the cell array region, the channel structure being electrically connected to the substrate, a dummy channel structure through the gate electrodes in the word line contact region, the dummy channel structure being spaced apart from the substrate, and a conductive line parallel to the substrate and electrically connected to a first gate electrode, the conductive line crossing at least a portion of an extension of the dummy channel structure in the perpendicular direction.

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