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1. 发明授权

US08710646B2 Power module 有权
公开(公告)号：US08710646B2
公开(公告)日：2014-04-29
申请号：US13310023
申请日：2011-12-02
申请人： Shintaro Araki , Korehide Okamoto , Khalid Hassan Hussein , Mitsunori Aiko
发明人： Shintaro Araki , Korehide Okamoto , Khalid Hassan Hussein , Mitsunori Aiko
IPC分类号： H01L23/48
摘要： A power module includes a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of the collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of the molded resin, and a second semiconductor device having the same construction as the first semiconductor device. The bilaterally extending terminal of the first semiconductor device is connected to a bilaterally extending terminal of the second semiconductor device.

2. 发明申请

US20120228741A1 POWER MODULE 有权
标题翻译：电源模块
公开(公告)号：US20120228741A1
公开(公告)日：2012-09-13
申请号：US13310023
申请日：2011-12-02
申请人： Shintaro ARAKI , Korehide Okamoto , Khalid Hassan Hussein , Mitsunori Aiko
发明人： Shintaro ARAKI , Korehide Okamoto , Khalid Hassan Hussein , Mitsunori Aiko
IPC分类号： H01L27/082
CPC分类号： H02M7/003 , H01L23/3107 , H01L25/112 , H01L2225/1011 , H01L2225/1064 , H01L2924/0002 , H01L2924/00
摘要： A power module includes a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of the collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of the molded resin, and a second semiconductor device having the same construction as the first semiconductor device. The bilaterally extending terminal of the first semiconductor device is connected to a bilaterally extending terminal of the second semiconductor device.
摘要翻译：功率模块包括具有集电极端子和从模制树脂向外延伸的发射极端子的第一半导体器件，其中集电极和发射极端子中的至少一个是从模制树脂的两个相对表面向外延伸的双边延伸端子，以及具有与第一半导体器件相同结构的第二半导体器件。第一半导体器件的双向延伸端子连接到第二半导体器件的双向延伸端子。

3. 发明授权

US08749047B2 Power module 有权
标题翻译：电源模块
公开(公告)号：US08749047B2
公开(公告)日：2014-06-10
申请号：US13310023
申请日：2011-12-02
申请人： Shintaro Araki , Korehide Okamoto , Khalid Hassan Hussein , Mitsunori Aiko
发明人： Shintaro Araki , Korehide Okamoto , Khalid Hassan Hussein , Mitsunori Aiko
IPC分类号： H01L23/48
CPC分类号： H02M7/003 , H01L23/3107 , H01L25/112 , H01L2225/1011 , H01L2225/1064 , H01L2924/0002 , H01L2924/00
摘要： A power module includes a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of the collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of the molded resin, and a second semiconductor device having the same construction as the first semiconductor device. The bilaterally extending terminal of the first semiconductor device is connected to a bilaterally extending terminal of the second semiconductor device.
摘要翻译：功率模块包括具有集电极端子和从模制树脂向外延伸的发射极端子的第一半导体器件，其中集电极和发射极端子中的至少一个是从模制树脂的两个相对表面向外延伸的双边延伸端子，以及具有与第一半导体器件相同结构的第二半导体器件。第一半导体器件的双向延伸端子连接到第二半导体器件的双向延伸端子。

4. 发明授权

US06762491B1 Power semiconductor device 失效
标题翻译：功率半导体器件
公开(公告)号：US06762491B1
公开(公告)日：2004-07-13
申请号：US10445931
申请日：2003-05-28
申请人： Shinji Hatae , Korehide Okamoto
发明人： Shinji Hatae , Korehide Okamoto
IPC分类号： H01L2334
CPC分类号： H01L23/3735 , H01L25/072 , H01L2224/32225 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： The present invention is to provide a power semiconductor device including a heat radiator having a principal surface and an insulating substrate bonded on the principal surface of the heat radiator via a first solder layer. The power semiconductor device also includes at least one semiconductor chip mounted on the insulating substrate via a second solder layer. The insulating substrate has a thin-layer and thick-layer edges, and is bonded on the principal surface of the heat radiator so that the first solder layer has a thickness thinner towards a direction from the thin-layer edge to the thick-layer edge (T1>T2). Also, the semiconductor chip is mounted on the insulating substrate so that a first distance between the thick-layer edge and the semiconductor chip is less than a second distance between the thin-layer edge and the semiconductor chip (L1
摘要翻译：本发明提供一种功率半导体装置，其特征在于，具有通过第一焊料层将散热体设置在散热体的主面的主面和绝缘基板。功率半导体器件还包括经由第二焊料层安装在绝缘基板上的至少一个半导体芯片。绝缘基板具有薄层和厚层边缘，并且结合在散热器的主表面上，使得第一焊料层具有朝向从薄层边缘到厚层边缘的方向更薄的厚度（T1> T2）。此外，半导体芯片安装在绝缘基板上，使得厚层边缘和半导体芯片之间的第一距离小于薄层边缘和半导体芯片之间的第二距离（L1

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