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    • 3. 发明申请
    • ELECTRON BEAM LITHOGRAPHY APPARATUS AND DESIGN METHOD OF PATTERNED BEAM-DEFINING APERTURE
    • 电子束光刻设备和图案光束定义孔的设计方法
    • US20090008579A1
    • 2009-01-08
    • US12209882
    • 2008-09-12
    • Koji TAKEYATakashi FUSETadashi KOTSUGIN. William PARKER
    • Koji TAKEYATakashi FUSETadashi KOTSUGIN. William PARKER
    • G21K5/00
    • H01J37/3174B82Y10/00B82Y40/00H01J2237/043H01J2237/1534
    • A current density distribution characteristic within a beam pattern on a target object can be improved by using a simple-structured electron optical system and a single patterned beam-defining aperture. With an aperture layout modified to be physically fabricable, a current density distribution within the beam pattern is obtained (S5). Then, a current density uniformity is determined by applying preset determination threshold values to the current density distribution within the beam pattern BP obtained as described above (S6), and if it is found not to fall within a tolerance range, tentative inner block portions are set in tentative electron ray passing areas (S7 and S8). Subsequently, by appropriately iterating steps S5 to S8 for the aperture layout modified or renewed by the tentative inner block portions as described above, the tentative electron ray passing areas and the tentative inner block portions, satisfying determination criteria, are decided (S8).
    • 通过使用简单结构的电子光学系统和单个图案化的光束定义孔,可以改善目标物体上的光束图案内的电流密度分布特性。 通过将孔径布局修改为物理上可加工的,获得波束图案内的电流密度分布(S5)。 然后,通过对如上所述获得的波束图案BP(S6)中的电流密度分布施加预设的确定阈值来确定电流密度均匀性,并且如果发现不在公差范围内,则暂定内部块部分 设置在暂定电子射线通过区域(S7和S8)。 接下来,通过对如上所述的临时内部块部分修改或更新的孔径布局适当地重复步骤S5至S8,确定满足确定标准的暂定电子射线通过区域和暂定内部块部分(S8)。