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1. 发明申请

US20130005085A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130005085A1
公开(公告)日：2013-01-03
申请号：US13549001
申请日：2012-07-13
申请人： Akinobu SHIBUYA , Koichi Takemura , Akira Ouchi , Tomoo Murakami
发明人： Akinobu SHIBUYA , Koichi Takemura , Akira Ouchi , Tomoo Murakami
IPC分类号： H01L21/60 , H01L21/56
CPC分类号： H01L21/563 , H01L21/486 , H01L21/561 , H01L21/565 , H01L21/6835 , H01L23/295 , H01L23/3121 , H01L23/3128 , H01L24/16 , H01L24/32 , H01L24/81 , H01L24/97 , H01L2221/68377 , H01L2224/05147 , H01L2224/05568 , H01L2224/05573 , H01L2224/0558 , H01L2224/05644 , H01L2224/05655 , H01L2224/16225 , H01L2224/16235 , H01L2224/32057 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83385 , H01L2224/97 , H01L2924/01004 , H01L2924/01006 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/0106 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/14 , H01L2924/15788 , H01L2924/18165 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2224/81 , H01L2924/00 , H01L2924/01031 , H01L2924/3512 , H01L2924/00014
摘要： A substrate and a semiconductor chip are connected by means of flip-chip interconnection. Around connecting pads of the substrate and input/output terminals of the semiconductor chip, an underfill material is injected. The underfill material is a composite material of filler and resin. Also, a first main surface of the substrate, which is not covered with the underfill material, and the side surfaces of the semiconductor chip are encapsulated with a molding material. The molding material is a composite material of filler and resin. An integrated body of the substrate and the semiconductor chip, which are covered with the molding material, is thinned from above and below.
摘要翻译：衬底和半导体芯片通过倒装芯片互连连接。在衬底的连接焊盘和半导体芯片的输入/输出端子之间，注入底部填充材料。底部填充材料是填料和树脂的复合材料。此外，未被底部填充材料覆盖的基板的第一主表面和半导体芯片的侧表面被模制材料封装。成型材料是填料和树脂的复合材料。由模制材料覆盖的衬底和半导体芯片的集成体从上方和下方变薄。

2. 发明授权

US08237292B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08237292B2
公开(公告)日：2012-08-07
申请号：US12526236
申请日：2008-02-29
申请人： Akinobu Shibuya , Koichi Takemura , Akira Ouchi , Tomoo Murakami
发明人： Akinobu Shibuya , Koichi Takemura , Akira Ouchi , Tomoo Murakami
IPC分类号： H01L23/488
CPC分类号： H01L21/563 , H01L21/486 , H01L21/561 , H01L21/565 , H01L21/6835 , H01L23/295 , H01L23/3121 , H01L23/3128 , H01L24/16 , H01L24/32 , H01L24/81 , H01L24/97 , H01L2221/68377 , H01L2224/05147 , H01L2224/05568 , H01L2224/05573 , H01L2224/0558 , H01L2224/05644 , H01L2224/05655 , H01L2224/16225 , H01L2224/16235 , H01L2224/32057 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83385 , H01L2224/97 , H01L2924/01004 , H01L2924/01006 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/0106 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/14 , H01L2924/15788 , H01L2924/18165 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2224/81 , H01L2924/00 , H01L2924/01031 , H01L2924/3512 , H01L2924/00014
摘要： A substrate (1) and a semiconductor chip (5) are connected by means of flip-chip interconnection. Around connecting pads (3) of the substrate (1) and input/output terminals (10) of the semiconductor chip (5), an underfill material (7) is injected. The underfill material (7) is a composite material of filler and resin in which the maximum particle diameter of the filler is 5 μm or below and whose filler content is 40 to 60 wt %. Also, a first main surface of the substrate (1), which is not covered with the underfill material (7), and the side surfaces of the semiconductor chip (5) are encapsulated with a molding material (8). The molding material (8) is a composite material of filler and resin whose filler content is over 75 wt % and in which the glass transition temperature of the resin is over 180° C. An integrated body of the substrate (1) and the semiconductor chip (5), which are covered with the molding material (8), is thinned from above and below.
摘要翻译：基板（1）和半导体芯片（5）通过倒装芯片互连连接。在衬底（1）的连接焊盘（3）和半导体芯片（5）的输入/输出端子（10）之间，注入底部填充材料（7）。底部填充材料（7）是填料和树脂的复合材料，其中填料的最大粒径为5μm以下，填料含量为40〜60重量％。此外，未被底部填充材料（7）覆盖的基板（1）的第一主表面和半导体芯片（5）的侧表面被模制材料（8）封装。成型材料（8）是填料和树脂的复合材料，其填料含量超过75重量％，树脂的玻璃化转变温度超过180℃。基板（1）和半导体由模制材料（8）覆盖的芯片（5）从上方和下方变薄。

3. 发明申请

US20120002441A1 AREA LIGHT SOURCE DEVICE 有权
标题翻译：区域光源设备
公开(公告)号：US20120002441A1
公开(公告)日：2012-01-05
申请号：US13057300
申请日：2009-08-07
申请人： Mamoru Yabe , Koichi Takemura , Kazuhide Hirota , Chih Bun Shiu
发明人： Mamoru Yabe , Koichi Takemura , Kazuhide Hirota , Chih Bun Shiu
IPC分类号： F21V5/02
CPC分类号： G02B6/002 , G02B6/0023 , G02B6/0028 , G02B6/0051 , G02B6/0053 , G02B6/0081 , G02F1/133615
摘要： An area light source device has a diffusion plate and a prism sheet stacked on a light guide plate, and a light source disposed opposite an end face of the light guide plate. Light emitted from the light source is introduced to an inside of the light guide plate from the end face. Area light emission is obtained by outputting the light diffused in the light guide plate from the diffusion plate and the prism sheet through a front face disposed opposite the diffusion plate. The light guide plate includes a light guide section that includes the end face disposed opposite the light source, a light emitting section that is disposed opposite the diffusion plate, and a joining section that joins the light guide section and the light emitting section. The front surface in the joining section includes an inclined surface that is gradually retreated toward a rear surface on an opposite side from the light guide section toward the light emitting section. The front faces of the light guide section and the joining section are covered with a light shielding member. The light shielding member is fixed to the diffusion plate without interposing the prism sheet therebetween. The light shielding member and the inclined surface are arranged to allow air to be interposed therebetween.
摘要翻译：区域光源装置具有层叠在导光板上的漫射板和棱镜片以及与导光板的端面相对设置的光源。从光源发射的光从端面引入导光板的内部。通过从漫射板和棱镜片通过与扩散板相对设置的前表面输出在导光板中扩散的光来获得区域发光。导光板包括导光部，该导光部包括与光源相对设置的端面，与扩散板相对配置的发光部和与导光部和发光部接合的接合部。接合部的前表面包括朝向与导光部朝向发光部的相对侧的后表面逐渐退缩的倾斜面。导光部和接合部的前表面被遮光部件覆盖。光屏蔽构件固定在漫射板上，而不将棱镜片插入其间。遮光构件和倾斜表面被布置成允许空气插入其间。

4. 发明申请

US20110304784A1 AREA LIGHT SOURCE DEVICE AND STEREOSCOPIC DISPLAY DEVICE 审中-公开
标题翻译：区域光源装置和立体显示装置
公开(公告)号：US20110304784A1
公开(公告)日：2011-12-15
申请号：US13157860
申请日：2011-06-10
申请人： Kazuhide Hirota , Gouo Kurata , Koichi Takemura , Yoshihiro Ueno , Yu Kioka
发明人： Kazuhide Hirota , Gouo Kurata , Koichi Takemura , Yoshihiro Ueno , Yu Kioka
IPC分类号： G02F1/13357 , F21V8/00
CPC分类号： G02B6/0076 , G02B6/0046 , G02B6/0053 , G02B27/2214
摘要： An area light source device has a first light guide plate, a first light source arranged facing a first end of the first light guide plate, a second light guide plate, and a second light source arranged facing a first end of the second light guide plate, the first light guide plate and the second light guide plate being overlapped to configure a light guide body. The first light guide plate and the second light guide plate are overlapped so that the first end face of the first light guide plate and a second end face positioned on an opposite side of the first end face of the second light guide plate are positioned on the same side.
摘要翻译：区域光源装置具有第一导光板，与第一导光板的第一端相对配置的第一光源，第二导光板和与第二导光板的第一端面对的第二光源第一导光板和第二导光板重叠配置导光体。第一导光板和第二导光板重叠，使得第一导光板的第一端面和位于第二导光板的第一端面的相反侧的第二端面位于同一面

5. 发明申请

US20110238332A1 FLOW MEASUREMENT DEVICE 有权
标题翻译：流量测量装置
公开(公告)号：US20110238332A1
公开(公告)日：2011-09-29
申请号：US12809311
申请日：2008-12-12
申请人： Fumikazu Shiba , Koichi Takemura , Daisuke Bessyo
发明人： Fumikazu Shiba , Koichi Takemura , Daisuke Bessyo
IPC分类号： G06F19/00
CPC分类号： G01F1/667 , G01F1/662
摘要： To find the propagation time of an ultrasonic wave, a difference occurs between the waveforms received upstream and downstream in a portion where the reception amplitude is comparatively large and it is prevented from being detected as an error of the propagation time. A reception signal is amplified in a reception unit 35 and reception point storage units 38 store the most recent reception point data in a plurality of storage sections in order until the signal level becomes a predetermined value (Vref). An average value of the two zero crossing points before and after the signal level becomes Vref can be adopted as a reception point, the propagation time with a small error of up and down offset, etc., is measured, and it is made possible to realize power saving operation by shortening the measurement time.
摘要翻译：为了找到超声波的传播时间，在接收幅度比较大的部分中接收的上下游波形之间出现差异，并且防止被检测为传播时间的误差。在接收单元35中放大接收信号，并且接收点存储单元38按顺序存储多个存储区中的最新接收点数据，直到信号电平变为预定值（Vref）为止。可以采用将信号电平变为Vref之前和之后的两个过零点的平均值作为接收点，测量上下偏移误差等的传播时间，并且可以通过缩短测量时间实现省电操作。

6. 发明授权

US06748812B1 Flow rate measuring apparatus 失效
标题翻译：流量测量仪
公开(公告)号：US06748812B1
公开(公告)日：2004-06-15
申请号：US10019989
申请日：2001-11-09
申请人： Koichi Takemura , Yukio Nagaoka
发明人： Koichi Takemura , Yukio Nagaoka
IPC分类号： G01F166
CPC分类号： G01F1/696 , G01F1/667 , G01F25/0007
摘要： A flow rate measuring apparatus includes: flow rate detection section 2 and 3 provided in a fluid flow path 1; a measuring section 10 for measuring an output from the flow rate detection sections 2 and 3; a cycle setting section 9 for setting a measurement cycle of the flow rate detection sections 2 and 3; a resolution setting section 7 for setting a measurement resolution of the measuring section 10; a flow rate calculation section 11 for calculating a flow rate based on an output from the measuring section 10; and a measurement control section 12 for controlling each of the sections.
摘要翻译：流量测量装置包括：设置在流体流路1中的流量检测部2和3; 用于测量流量检测部分2和3的输出的测量部分10; 用于设定流量检测部2和3的测量周期的循环设定部9; 用于设定测量部10的测量分辨率的分辨率设定部7; 流量计算部11，用于基于来自测量部10的输出来计算流量; 以及用于控制每个部分的测量控制部分12。

7. 发明授权

US06335551B1 Thin film capacitor having an improved bottom electrode and method of forming the same 有权
公开(公告)号：US06335551B1
公开(公告)日：2002-01-01
申请号：US09741422
申请日：2000-12-21
申请人： Koichi Takemura
发明人： Koichi Takemura
IPC分类号： H01C27108
摘要： The present invention provides a storage electrode of a capacitor, which includes a region in contact with a dielectric film of the capacitor, wherein at least the region is made of an amorphous electrically conductive oxide material.

8. 发明授权

US08814412B2 Area light source device 有权
标题翻译：区域光源装置
公开(公告)号：US08814412B2
公开(公告)日：2014-08-26
申请号：US13057300
申请日：2009-08-07
申请人： Mamoru Yabe , Koichi Takemura , Kazuhide Hirota , Chih Bun Shiu
发明人： Mamoru Yabe , Koichi Takemura , Kazuhide Hirota , Chih Bun Shiu
IPC分类号： F21V7/04 , G02F1/1335
CPC分类号： G02B6/002 , G02B6/0023 , G02B6/0028 , G02B6/0051 , G02B6/0053 , G02B6/0081 , G02F1/133615
摘要： An area light source device has a diffusion plate and a prism sheet stacked on a light guide plate, and a light source disposed opposite an end face of the light guide plate. Light emitted from the light source is introduced to an inside of the light guide plate from the end face. Area light emission is obtained by outputting the light diffused in the light guide plate from the diffusion plate and the prism sheet through a front face disposed opposite the diffusion plate. The light guide plate includes a light guide section that includes the end face disposed opposite the light source, a light emitting section that is disposed opposite the diffusion plate, and a joining section that joins the light guide section and the light emitting section. The front surface in the joining section includes an inclined surface that is gradually retreated toward a rear surface on an opposite side from the light guide section toward the light emitting section. The front faces of the light guide section and the joining section are covered with a light shielding member. The light shielding member is fixed to the diffusion plate without interposing the prism sheet therebetween. The light shielding member and the inclined surface are arranged to allow air to be interposed therebetween.
摘要翻译：区域光源装置具有层叠在导光板上的漫射板和棱镜片以及与导光板的端面相对设置的光源。从光源发射的光从端面引入导光板的内部。通过从漫射板和棱镜片通过与扩散板相对设置的前表面输出在导光板中扩散的光来获得区域发光。导光板包括导光部，该导光部包括与光源相对设置的端面，与扩散板相对配置的发光部和与导光部和发光部接合的接合部。接合部的前表面包括朝向与导光部朝向发光部的相对侧的后表面逐渐退缩的倾斜面。导光部和接合部的前表面被遮光部件覆盖。光屏蔽构件固定在漫射板上，而不将棱镜片插入其间。遮光构件和倾斜表面被布置成允许空气插入其间。

9. 发明申请

US20110302753A1 CAPACITOR PRODUCING METHOD, CAPACITOR PRODUCING DEVICE, AND CAPACITOR PRODUCING PROGRAM 失效
标题翻译：电容器生产方法，电容器生产装置和电容器生产程序
公开(公告)号：US20110302753A1
公开(公告)日：2011-12-15
申请号：US13203018
申请日：2010-02-12
申请人： Akinobu Shibuya , Koichi Takemura , Takashi Manako
发明人： Akinobu Shibuya , Koichi Takemura , Takashi Manako
IPC分类号： H01G7/00
CPC分类号： H01G7/00 , H01L22/14 , H01L22/20 , H01L27/016 , H01L2924/0002 , Y10T29/43 , Y10T29/435 , H01L2924/00
摘要： In a capacitor producing method, a bottom electrode, a thin-film dielectric, and a top electrode are deposited on a substrate so as to form a capacitor, wherein defects including particles and electrical short-circuits between the bottom electrode and the top electrode are detected before the capacitor is divided into capacitor cells. Next, defects such as particles and electrical short-circuits between the bottom electrode and the top electrode are removed before the capacitor is divided into capacitor cells.
摘要翻译：在电容器制造方法中，在基板上沉积底电极，薄膜电介质和顶电极以形成电容器，其中包括在底电极和顶电极之间的颗粒和电短路的缺陷是在电容器分为电容器单元之前检测。接下来，在将电容器分成电容器单元之前，去除在底部电极和顶部电极之间的诸如颗粒和电气短路的缺陷。

10. 发明申请

US20100308474A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100308474A1
公开(公告)日：2010-12-09
申请号：US12526236
申请日：2008-02-29
申请人： Akinobu Shibuya , Koichi Takemura , Akira Ouchi , Tomoo Murakami
发明人： Akinobu Shibuya , Koichi Takemura , Akira Ouchi , Tomoo Murakami
IPC分类号： H01L23/488 , H01L21/56 , H01L21/60
CPC分类号： H01L21/563 , H01L21/486 , H01L21/561 , H01L21/565 , H01L21/6835 , H01L23/295 , H01L23/3121 , H01L23/3128 , H01L24/16 , H01L24/32 , H01L24/81 , H01L24/97 , H01L2221/68377 , H01L2224/05147 , H01L2224/05568 , H01L2224/05573 , H01L2224/0558 , H01L2224/05644 , H01L2224/05655 , H01L2224/16225 , H01L2224/16235 , H01L2224/32057 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83385 , H01L2224/97 , H01L2924/01004 , H01L2924/01006 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/0106 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/14 , H01L2924/15788 , H01L2924/18165 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2224/81 , H01L2924/00 , H01L2924/01031 , H01L2924/3512 , H01L2924/00014
摘要： A substrate (1) and a semiconductor chip (5) are connected by means of flip-chip interconnection. Around connecting pads (3) of the substrate (1) and input/output terminals (10) of the semiconductor chip (5), an underfill material (7) is injected. The underfill material (7) is a composite material of filler and resin in which the maximum particle diameter of the filler is 5 μm or below and whose filler content is 40 to 60 wt %. Also, a first main surface of the substrate (1), which is not covered with the underfill material (7), and the side surfaces of the semiconductor chip (5) are encapsulated with a molding material (8). The molding material (8) is a composite material of filler and resin whose filler content is over 75 wt % and in which the glass transition temperature of the resin is over 180° C. An integrated body of the substrate (1) and the semiconductor chip (5), which are covered with the molding material (8), is thinned from above and below.
摘要翻译：基板（1）和半导体芯片（5）通过倒装芯片互连连接。在衬底（1）的连接焊盘（3）和半导体芯片（5）的输入/输出端子（10）之间，注入底部填充材料（7）。底部填充材料（7）是填料和树脂的复合材料，其中填料的最大粒径为5μm以下，填料的含量为40〜60重量％。此外，未被底部填充材料（7）覆盖的基板（1）的第一主表面和半导体芯片（5）的侧表面被模制材料（8）封装。成型材料（8）是填料和树脂的复合材料，其填料含量超过75重量％，树脂的玻璃化转变温度超过180℃。基板（1）和半导体由模制材料（8）覆盖的芯片（5）从上方和下方变薄。

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