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1. 发明申请

US20110001667A1 Antenna Control Device, Reception Device, And Antenna Control Method 审中-公开
标题翻译：天线控制装置，接收装置和天线控制方法
公开(公告)号：US20110001667A1
公开(公告)日：2011-01-06
申请号：US12865569
申请日：2009-01-22
申请人： Kohji Matsumura , Sumio Hanafusa
发明人： Kohji Matsumura , Sumio Hanafusa
IPC分类号： H01Q3/44 , H01Q23/00
CPC分类号： H01Q19/32 , H01Q3/44 , H01Q3/446 , H04B1/18
摘要： A reception device includes: a variable-directivity antenna; an antenna amplifier which amplifies a signal inputted from the variable-directivity antenna; a regulator which supplies DC power to the antenna amplifier; a full wave rectification unit which supplies the DC power to the regulator; a signal line; a DC power source; and a switching unit which switches connection with the DC power source. DC voltage is applied to the DC power source by the signal line so as to control the directivity of the variable-directivity antenna. Moreover, the DC power is supplied to the regulator via the full wave rectification unit. When the connection of the switching unit is switched, the DC voltage supplied to the variable-directivity antenna is reversed between positive and negative voltage but the DC voltage supplied to the regulator is not reversed.
摘要翻译：接收装置包括：可变方向性天线; 放大从可变方向性天线输入的信号的天线放大器; 向天线放大器提供直流电的调节器; 全波整流单元，向稳压器提供直流电; 信号线直流电源; 以及切换与直流电源的连接的开关单元。通过信号线将直流电压施加到直流电源，以控制可变方向性天线的方向性。此外，直流电源通过全波整流单元提供给调节器。当切换单元的连接切换时，提供给可变方向性天线的直流电压在正电压和负电压之间相反，但是提供给调节器的直流电压不反转。

2. 发明授权

US5932889A Semiconductor device with floating quantum box 失效
标题翻译：具有浮动量子盒的半导体器件
公开(公告)号：US5932889A
公开(公告)日：1999-08-03
申请号：US561124
申请日：1995-11-20
申请人： Kohji Matsumura , Yasoo Harada
发明人： Kohji Matsumura , Yasoo Harada
IPC分类号： H01L29/06 , H01L29/12 , H01L29/76 , H01L29/778 , H01L29/788 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y10/00 , H01L29/127 , H01L29/7613 , H01L29/7781 , H01L29/7783 , H01L29/7787 , H01L29/7888
摘要： An undoped Al.sub.0.22 Ga.sub.0.78 As spacer layer having a large forbidden bandgap and an N-Al.sub.0.22 Ga.sub.0.78 As electron-supplying layer having a large forbidden bandgap are formed in order on an undoped GaAs buffer layer having a small forbidden bandgap, and InAs quantum boxes are provided in the Al.sub.0.22 Ga.sub.0.78 As spacer layer. The size of the InAs quantum box is about 150 .ANG. and the height is about 40 .ANG.. When a predetermined drain voltage is applied, electrons are accumulated in the InAs quantum boxes from a channel formed in the vicinity of the interface with the Al.sub.0.22 Ga.sub.0.78 As spacer layer in the GaAs buffer layer. Accordingly, a drain current will not flow almost at all even if a drain voltage is applied.
摘要翻译：在具有较小禁带隙的未掺杂的GaAs缓冲层上依次形成具有较大禁止带隙的未掺杂的Al0.22Ga0.78As间隔层和具有较大禁止带隙的N-Al0.22Ga0.78As电子供应层，InAs 量子盒设置在Al0.22Ga0.78As间隔层中。 InAs量子箱的大小约为150安培，高度约为40安培。当施加预定的漏极电压时，电子从在GaAs缓冲层中与Al0.22Ga0.78As间隔层的界面附近形成的沟道中积累在InAs量子箱中。因此，即使施加漏极电压，漏极电流几乎不会流出。

3. 发明授权

US5751029A Field-effect semiconductor device having heterojunction 失效
标题翻译：具有异质结的场效半导体器件
公开(公告)号：US5751029A
公开(公告)日：1998-05-12
申请号：US651340
申请日：1996-05-17
申请人： Shigeharu Matsushita , Daijirou Inoue , Kohji Matsumura , Minoru Sawada , Yasoo Harada
发明人： Shigeharu Matsushita , Daijirou Inoue , Kohji Matsumura , Minoru Sawada , Yasoo Harada
IPC分类号： H01L29/812 , H01L21/338 , H01L29/778 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/7784
摘要： An undoped Al.sub.0.22 Ga.sub.0.78 As layer, an undoped In.sub.0.2 Ga.sub.0.8 As electron-drifting layer, and an undoped GaAs electron-supplying layer are formed in order on a GaAs substrate. An impurity-doped layer .delta.-doped with Si donor is formed in the GaAs electron-supplying layer. An n-Al.sub.0.22 Ga.sub.0.78 As layer and n.sup.+ -GaAs cap layers are formed in order on the GaAs electron-supplying layer. A source electrode and a drain electrode are formed on the n.sup.+ -GaAs cap layers and a gate electrode is formed on the n-Al.sub.0.22 Ga.sub.0.78 As layer.
摘要翻译：在GaAs衬底上依次形成未掺杂的Al0.22Ga0.78As层，未掺杂的In0.2Ga0.8As电子漂移层和未掺杂的GaAs电子供体层。在GaAs电子供给层中形成掺杂有Si供体的杂质掺杂层δ。在GaAs电子供给层上依次形成n-Al0.22Ga0.78As层和n + -GaAs覆盖层。在n + -GaAs覆盖层上形成源电极和漏电极，在n-Al0.22Ga0.78As层上形成栅电极。

4. 发明申请

US20050270386A1 Method and apparatus for authentication utilizing iris 审中-公开
标题翻译：使用虹膜进行认证的方法和装置
公开(公告)号：US20050270386A1
公开(公告)日：2005-12-08
申请号：US11139022
申请日：2005-05-27
申请人： Hirofumi Saitoh , Keisuke Watanabe , Kohji Matsumura , Tatsushi Ohyama
发明人： Hirofumi Saitoh , Keisuke Watanabe , Kohji Matsumura , Tatsushi Ohyama
IPC分类号： A61B5/117 , G06F15/00 , G06F21/20 , G06K9/00 , G06T1/00 , G06T7/00 , H04L9/32 , H04N5/262
CPC分类号： G06K9/00906 , G06K9/00604 , G06K9/00912
摘要： A first image pickup unit mainly captures the image of whole face. A second image pickup unit mainly captures an image of iris in an eye. A display unit simultaneously displays both an image picked up by the first image pickup unit and an image picked up by the second image pickup unit on divided display regions, and naturally prompts a user to operate in such manner as to include himself/herself within an image pickup range. When the user moves his/her face or an authentication apparatus upon seeing this display, a relative position or direction of the iris and the image pickup device can be set to a desired state.
摘要翻译：第一图像拾取单元主要捕获整个脸部的图像。第二图像拾取单元主要捕获眼睛中的虹膜图像。显示单元同时在划分的显示区域上同时显示由第一图像拾取单元拾取的图像和由第二图像拾取单元拾取的图像，并且自然地提示用户以将自身包括在内部的方式操作图像拾取范围。当用户在看到该显示时移动他/她的脸或认证设备时，可以将虹膜和图像拾取设备的相对位置或方向设置为期望状态。

5. 发明授权

US5225895A Velocity-modulation transistor with quantum well wire layer 失效
标题翻译：具有量子阱线的速度调制晶体管
公开(公告)号：US5225895A
公开(公告)日：1993-07-06
申请号：US626309
申请日：1990-12-12
申请人： Minoru Sawada , Kohji Matsumura , Daijiro Inoue
发明人： Minoru Sawada , Kohji Matsumura , Daijiro Inoue
IPC分类号： H01L29/772 , H01L29/775
CPC分类号： B82Y10/00 , H01L29/772 , H01L29/7727 , H01L29/775
摘要： An electron supply layer, a quantum well layer, a first barrier layer, a quantum well layer and a second barrier layer are formed in that order on a GaAs substrate to obtain a device, and source, drain and gate electrodes are provided on the surface of this device. In the above described quantum well layers, the lowest sub-band energies of respective carriers largely differ from each other. Accordingly, one of the above quantum well layers serves as a high-speed channel, and the other serves as a low-speed channel. The change in current value with the application of a gate bias depends only on the speed at which electrons move from the high-speed channel to the low-speed channel. Consequently, a velocity-modulation transistor can be constructed which operates at substantially high speed.
摘要翻译：在GaAs衬底上依次形成电子供给层，量子阱层，第一势垒层，量子阱层和第二阻挡层，以获得器件，并且在表面上设置源极，漏极和栅电极的这个设备。在上述量子阱层中，各个载流子的最低子带能量彼此大不相同。因此，上述量子阱层之一用作高速通道，另一个用作低速通道。通过施加栅极偏置的电流值的变化仅取决于电子从高速通道移动到低速通道的速度。因此，可以构造速度调制晶体管，其以基本上高的速度运行。

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