专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07617418B2 Method and system for verifying and storing documents during a program failure 有权
标题翻译：在程序故障期间验证和存储文档的方法和系统
公开(公告)号：US07617418B2
公开(公告)日：2009-11-10
申请号：US10955272
申请日：2004-09-30
申请人： Eric Snyder , Jeff Larsson , Bob Coffen , Kevin Fischer , Aleksandr Slepak , Juha Niemisto
发明人： Eric Snyder , Jeff Larsson , Bob Coffen , Kevin Fischer , Aleksandr Slepak , Juha Niemisto
IPC分类号： G06F11/00
CPC分类号： G06F11/1438 , Y10S707/99953
摘要： Method and system for verifying and storing documents during a failure in a program module. Once a failure is detected in the program module, control passes to an exception handler that determines whether the open files have been modified. If so, a crash handler is executed, which verifies and stores the documents by detecting and repairing any discovered corruption. The program module is then terminated and restarted. Upon restarting the program module, the repaired document is opened and displayed to the user with a list of repairs.
摘要翻译：用于在程序模块故障期间验证和存储文档的方法和系统。一旦在程序模块中检测到故障，控制将传递给一个异常处理程序，该异常处理程序确定打开的文件是否已被修改。如果是这样，则执行崩溃处理程序，通过检测和修复任何发现的损坏来验证和存储文档。然后程序模块被终止并重新启动。在重新启动程序模块后，修复的文档将被打开并显示给用户并列出维修。

2. 发明申请

US20090170309A1 Barrier process/structure for transistor trench contact applications 审中-公开
公开(公告)号：US20090170309A1
公开(公告)日：2009-07-02
申请号：US12380377
申请日：2009-02-26
申请人： Vinay Chikarmane , Kevin Fischer , Brennan Peterson
发明人： Vinay Chikarmane , Kevin Fischer , Brennan Peterson
IPC分类号： H01L21/768
CPC分类号： H01L21/76844 , H01L21/76831
摘要： A barrier architecture is provided that includes different materials that are selected to be employed in connection with copper contact applications. Some of the barrier material is formed over trench contact sidewalls, and other different barrier material is formed over trench contact bottoms. By selecting the appropriate barrier materials, electromigration can be improved while, at the same time, interconnect and contact resistances can be kept low and array leakage can be mitigated.

3. 发明授权

US09450130B2 Frame-mounted wire management device 有权
标题翻译：框架式电线管理装置
公开(公告)号：US09450130B2
公开(公告)日：2016-09-20
申请号：US13076078
申请日：2011-03-30
申请人： Tyler Grushkowitz , Kevin Fischer , Matthew Danning
发明人： Tyler Grushkowitz , Kevin Fischer , Matthew Danning
IPC分类号： H01L31/05 , F16L3/24 , H02G3/32 , F16L3/23 , H02S30/10 , H02S40/36 , F24J2/52
CPC分类号： H02S30/10 , F16L3/23 , F16L3/24 , F24S25/20 , H01L31/05 , H02G3/0406 , H02G3/32 , H02S40/36 , Y02E10/50
摘要： A wire management device is disclosed. The device comprises a clip comprising an upper planar member and a lower planar member, each planar member having an inner and outer surface, wherein the inner surface of the upper planar member includes a post extending toward the inner surface of the lower planar member, a stem extending from the outer surface of the lower planar member, the stem including two outwardly-extending flanges, each of the first and second outwardly-extending flanges including an edge portion extending toward the outer surface of the lower planar member, and a transverse passage extending along the outer surface of the lower planar member, the transverse passage extending across the stem, wherein the stem has a recessed portion along the transverse passage.
摘要翻译：公开了一种线管理装置。该装置包括夹子，该夹子包括上平面构件和下平面构件，每个平面构件具有内表面和外表面，其中上平面构件的内表面包括朝向下平面构件的内表面延伸的柱，所述杆从所述下平面构件的外表面延伸，所述杆包括两个向外延伸的凸缘，所述第一和第二向外延伸的凸缘中的每一个包括朝向所述下平面构件的外表面延伸的边缘部分，沿着所述下平面构件的外表面延伸，所述横向通道延伸穿过所述杆，其中所述杆具有沿着所述横向通道的凹部。

4. 发明申请

US20120192925A1 FRAME-MOUNTED WIRE MANAGEMENT DEVICE 有权
标题翻译：框架安装线路管理设备
公开(公告)号：US20120192925A1
公开(公告)日：2012-08-02
申请号：US13076078
申请日：2011-03-30
申请人： Tyler Grushkowitz , Kevin Fischer , Matthew Danning
发明人： Tyler Grushkowitz , Kevin Fischer , Matthew Danning
IPC分类号： H01L31/048 , F16L3/12
CPC分类号： H02S30/10 , F16L3/23 , F16L3/24 , F24S25/20 , H01L31/05 , H02G3/0406 , H02G3/32 , H02S40/36 , Y02E10/50
摘要： A wire management device is disclosed. The device comprises a clip comprising an upper planar member and a lower planar member, each planar member having an inner and outer surface, wherein the inner surface of the upper planar member includes a post extending toward the inner surface of the lower planar member, a stem extending from the outer surface of the lower planar member, the stem including two outwardly-extending flanges, each of the first and second outwardly-extending flanges including an edge portion extending toward the outer surface of the lower planar member, and a transverse passage extending along the outer surface of the lower planar member, the transverse passage extending across the stem, wherein the stem has a recessed portion along the transverse passage.
摘要翻译：公开了一种线管理装置。该装置包括夹子，该夹子包括上平面构件和下平面构件，每个平面构件具有内表面和外表面，其中上平面构件的内表面包括朝向下平面构件的内表面延伸的柱，所述杆从所述下平面构件的外表面延伸，所述杆包括两个向外延伸的凸缘，所述第一和第二向外延伸的凸缘中的每一个包括朝向所述下平面构件的外表面延伸的边缘部分，沿着所述下平面构件的外表面延伸，所述横向通道延伸穿过所述杆，其中所述杆具有沿着所述横向通道的凹部。

5. 发明授权

US07525197B2 Barrier process/structure for transistor trench contact applications 有权
标题翻译：晶体管沟槽接触应用的阻挡工艺/结构
公开(公告)号：US07525197B2
公开(公告)日：2009-04-28
申请号：US11496291
申请日：2006-07-31
申请人： Vinay Chikarmane , Kevin Fischer , Brennan Peterson
发明人： Vinay Chikarmane , Kevin Fischer , Brennan Peterson
IPC分类号： H01L21/44
CPC分类号： H01L21/76844 , H01L21/76831
摘要： A barrier architecture is provided that includes different materials that are selected to be employed in connection with copper contact applications. Some of the barrier material is formed over trench contact sidewalls, and other different barrier material is formed over trench contact bottoms. By selecting the appropriate barrier materials, electromigration can be improved while, at the same time, interconnect and contact resistances can be kept low and array leakage can be mitigated.
摘要翻译：提供了一种屏障结构，其包括被选择用于与铜接触应用相结合的不同材料。一些阻挡材料形成在沟槽接触侧壁上，并且在沟槽接触底部上形成其它不同的阻挡材料。通过选择适当的阻挡材料，可以改善电迁移，同时可以将互连和接触电阻保持在较低水平，并可以减轻阵列泄漏。

6. 发明申请

US20080079165A1 Barrier formation and structure to use in semiconductor devices 有权
标题翻译：阻挡层形成和结构用于半导体器件
公开(公告)号：US20080079165A1
公开(公告)日：2008-04-03
申请号：US11540199
申请日：2006-09-29
申请人： Kevin Fischer , Vinay Chikarmane , Brennan Peterson
发明人： Kevin Fischer , Vinay Chikarmane , Brennan Peterson
IPC分类号： H01L23/48
CPC分类号： H01L23/485 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of barriers to use in semiconductor devices are presented herein.
摘要翻译：这里给出了在半导体器件中使用的屏障的实施例。

7. 发明申请

US20070180335A1 Method and apparatus for providing help content corresponding to the occurrence of an event within a computer 有权
公开(公告)号：US20070180335A1
公开(公告)日：2007-08-02
申请号：US11638802
申请日：2006-12-14
申请人： Steven Greenberg , Jeffrey Larsson , Kevin Fischer
发明人： Steven Greenberg , Jeffrey Larsson , Kevin Fischer
IPC分类号： G06F11/00
CPC分类号： G06F9/4446 , G06F9/453 , Y10S707/99933 , Y10S707/99945
摘要： A method and apparatus are provided for displaying help content corresponding to the occurrence of an event occurring within a computer. An alert help data file is periodically downloaded at a client computer. When a program alert occurs within a client computer, the alert help data file is searched to identify help content corresponding to the particular occurrence of the alert. An alert identifier may be uniquely assigned to each alert to assist in locating the corresponding help content. Moreover, an assert tag and a function result value may also be utilized to define and locate particular help content. Once located, the help content may be displayed to a user.

8. 发明申请

US20050224980A1 Interconnect adapted for reduced electron scattering 审中-公开
标题翻译：互连适用于减少电子散射
公开(公告)号：US20050224980A1
公开(公告)日：2005-10-13
申请号：US10816470
申请日：2004-03-31
申请人： Jihperng Leu , Chih-I Wu , Mark Liu , Kevin Fischer , Chia-Hong Jan , David Gracias
发明人： Jihperng Leu , Chih-I Wu , Mark Liu , Kevin Fischer , Chia-Hong Jan , David Gracias
IPC分类号： H01L21/288 , H01L21/44 , H01L21/768
CPC分类号： H01L21/2885 , H01L21/76888
摘要： A die is provided with an interconnect, and the grain structure of the interconnect is adapted to reduce electron scattering.
摘要翻译：模具设置有互连，并且互连的晶粒结构适于减少电子散射。

9. 发明授权

US09123727B2 Airgap interconnect with hood layer and method of forming 有权
标题翻译：气罩与罩层互连和成型方法
公开(公告)号：US09123727B2
公开(公告)日：2015-09-01
申请号：US13997171
申请日：2011-12-29
申请人： Kevin Fischer
发明人： Kevin Fischer
IPC分类号： H01L21/70 , H01L23/532 , H01L21/764 , H01L23/522 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/764 , H01L21/7682 , H01L21/76834 , H01L21/7685 , H01L21/76852 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An airgap interconnect structure with hood layer and methods for forming such an airgap interconnect structure are disclosed. A substrate having a dielectric layer with a plurality of interconnects formed therein is provided. Each interconnect is encapsulated by a barrier layer. A hardmask is formed on the dielectric layer and patterned to expose the dielectric layer between adjacent interconnects where an airgap is desired. The dielectric layer is etched to form a trench, wherein the etching process additionally etches at least a portion of the barrier layer to expose a portion of the side surface of each adjacent copper interconnect. A hood layer is electrolessly plated onto an exposed portion of the top surface and the exposed portion of the side surface to reseal the interconnect. A gap-sealing dielectric layer is formed over the device, sealing the trench to form an airgap.
摘要翻译：公开了一种具有罩层的气隙互连结构以及用于形成这种气隙互连结构的方法。提供具有形成有多个互连件的电介质层的基板。每个互连由阻挡层封装。在电介质层上形成硬掩模，并图案化以暴露需要气隙的相邻互连之间的电介质层。蚀刻介电层以形成沟槽，其中蚀刻工艺另外蚀刻阻挡层的至少一部分以暴露每个相邻铜互连的侧表面的一部分。罩层被无电镀在顶表面的暴露部分和侧表面的暴露部分上以重新密封互连。在器件上形成间隙密封电介质层，密封沟槽以形成气隙。

10. 发明申请

US20080026556A1 Barrier process/structure for transistor trench contact applications 有权
标题翻译：晶体管沟槽接触应用的阻隔工艺/结构
公开(公告)号：US20080026556A1
公开(公告)日：2008-01-31
申请号：US11496291
申请日：2006-07-31
申请人： Vinay Chikarmane , Kevin Fischer , Brennan Peterson
发明人： Vinay Chikarmane , Kevin Fischer , Brennan Peterson
IPC分类号： H01L21/44
CPC分类号： H01L21/76844 , H01L21/76831
摘要： A barrier architecture is provided that includes different materials that are selected to be employed in connection with copper contact applications. Some of the barrier material is formed over trench contact sidewalls, and other different barrier material is formed over trench contact bottoms. By selecting the appropriate barrier materials, electromigration can be improved while, at the same time, interconnect and contact resistances can be kept low and array leakage can be mitigated.
摘要翻译：提供了一种屏障结构，其包括被选择用于与铜接触应用相结合的不同材料。一些阻挡材料形成在沟槽接触侧壁上，并且在沟槽接触底部上形成其它不同的阻挡材料。通过选择适当的阻挡材料，可以改善电迁移，同时可以将互连和接触电阻保持在较低水平，并可以减轻阵列泄漏。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式