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1. 发明授权

US07883960B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07883960B2
公开(公告)日：2011-02-08
申请号：US12409979
申请日：2009-03-24
申请人： Masatoshi Fukuda , Akiyoshi Hatada , Katsuaki Ookoshi , Kenichi Okabe , Tomonari Yamamoto
发明人： Masatoshi Fukuda , Akiyoshi Hatada , Katsuaki Ookoshi , Kenichi Okabe , Tomonari Yamamoto
IPC分类号： H01L21/8234 , H01L21/8244 , H01L21/8242 , H01L21/336
CPC分类号： H01L27/0629
摘要： A method of manufacturing a semiconductor device includes forming a conductive layer over a semiconductor substrate, selectively removing the conductive layer for forming a resistance element and a gate electrode, forming sidewall spacers over sidewalls of the remaining conductive layer, forming a first insulating film containing a nitrogen over the semiconductor substrate having the sidewall spacers, implanting ions in the semiconductor substrate through the first insulating film, forming a second insulating film containing a nitrogen over the first insulating film after implanting ions in the semiconductor substrate through the first insulating film, and selectively removing the first and the second insulating film such that at least a part of the first and the second insulating films is remained over the semiconductor substrate and over the conductive layer.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成导电层，选择性地去除用于形成电阻元件和栅电极的导电层，在剩余导电层的侧壁上形成侧壁间隔物，形成第一绝缘膜，在具有侧壁间隔物的半导体衬底上的氮气，通过第一绝缘膜在半导体衬底中注入离子，在通过第一绝缘膜植入离子到半导体衬底中之后，在第一绝缘膜上形成含有氮的第二绝缘膜，并且选择性地去除第一和第二绝缘膜，使得第一和第二绝缘膜的至少一部分保留在半导体衬底上并在导电层上方。

2. 发明授权

US07749205B2 Automatic urine disposal device and urine receptacle used therefor 失效
标题翻译：自动尿液处理装置和尿液容器
公开(公告)号：US07749205B2
公开(公告)日：2010-07-06
申请号：US10796025
申请日：2004-03-10
申请人： Wataru Tazoe , Junichi Kobayashi , Ryousuke Miyagawa , Kenji Yoshida , Shigeru Machida , Ichiro Wada , Miou Suzuki , Kenichi Okabe
发明人： Wataru Tazoe , Junichi Kobayashi , Ryousuke Miyagawa , Kenji Yoshida , Shigeru Machida , Ichiro Wada , Miou Suzuki , Kenichi Okabe
IPC分类号： A61M1/00
CPC分类号： A61F5/451
摘要： A wearer wears a urine receptacle in which a urine absorbent material 3 is housed in a substantially rectangular, non-breathable, liquid-impermeable outer sheet having a U-shaped cross-section, and the surface of the urine absorbent material is covered with a hard-breathable, liquid permeable top sheet. Urine is discharged from a urine drainage port formed on the bottom surface of the outer sheet to a sealed urine tank by a vacuum pump through urine drainage tubes.
摘要翻译：佩戴者穿着尿液容器，尿液吸收材料3容纳在具有U形横截面的基本为矩形的不可透气的不透液性外片中，并且尿吸收材料的表面覆盖有透气性好的透液性顶片。尿液通过尿液排出管由真空泵从形成在外片的底面的尿液排出口排出到密封的尿液槽。

3. 发明申请

US20100024462A1 REFRIGERATOR, AND ELECTRIC DEVICE 审中-公开
标题翻译：制冷器和电气设备
公开(公告)号：US20100024462A1
公开(公告)日：2010-02-04
申请号：US12580890
申请日：2009-10-16
申请人： Toyoshi Kamisako , Yoshihiro Ueda , Kazuya Nakanishi , Tadashi Adachi , Kazuyuki Hamada , Kiyotaka Tabira , Yasuyuki Okamoto , Kenichi Okabe , Masashi Yuasa , Kenichi Kakita , Kiyoshi Mori , Tosiaki Mamemoto , Katsunori Horii
发明人： Toyoshi Kamisako , Yoshihiro Ueda , Kazuya Nakanishi , Tadashi Adachi , Kazuyuki Hamada , Kiyotaka Tabira , Yasuyuki Okamoto , Kenichi Okabe , Masashi Yuasa , Kenichi Kakita , Kiyoshi Mori , Tosiaki Mamemoto , Katsunori Horii
IPC分类号： F25D15/00 , F25D13/04 , F23D11/32
CPC分类号： F25D17/042 , A23L3/3409 , A23L3/363 , F25D2317/0413
摘要： The refrigerator includes a vegetable compartment (107) thermally insulated by a rear partition (111), and a mist generation department (139) for atomizing a mist into the vegetable compartment (107), and the mist generation department (139) includes a atomizing electrode (135) for atomizing the mist into the vegetable compartment (107), a voltage applicator (133) for applying a voltage to the atomizing electrode (135), and a cooling pin (134) coupled to the atomizing electrode (135), in which the atomizing electrode (135) is cooled to a temperature lower than the dew point by a outlet air-duct for freezer compartment (141), and the moisture in the air is cooled to condense dew on the atomizing electrode (135), and is atomized as a mist into the vegetable compartment (107), and dew can be condensed from moisture onto the atomizing electrode (135) stably and in a simple configuration, and the freshness of the food is enhanced while the reliability of the refrigerator is enhanced.
摘要翻译：冰箱包括通过后隔板（111）隔热的蔬菜室（107）和用于将雾雾化到蔬菜室（107）中的雾化部（139），雾生成部（139）包括雾化用于将雾雾化到蔬菜室（107）中的电极（135），用于向雾化电极（135）施加电压的电压施加器（133）和耦合到雾化电极（135）的冷却销（134）其中雾化电极（135）通过冷冻室（141）的出口空气导管冷却到低于露点的温度，并且空气中的水分被冷却以使雾化电极（135）上的露水冷凝，并且被雾化成蔬菜室107，能够以简单的结构将湿气从湿气中冷凝到雾化电极135上，并且能够提高食品的新鲜度，同时冰箱的可靠性为增强。

4. 发明授权

US07645665B2 Semiconductor device having shallow b-doped region and its manufacture 有权
标题翻译：半导体器件具有较浅的b掺杂区域及其制造
公开(公告)号：US07645665B2
公开(公告)日：2010-01-12
申请号：US11607927
申请日：2006-12-04
申请人： Tomohiro Kubo , Kenichi Okabe , Tomonari Yamamoto
发明人： Tomohiro Kubo , Kenichi Okabe , Tomonari Yamamoto
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823814
摘要： A method for manufacturing a semiconductor device has the steps of: (a) implanting boron (B) ions into a semiconductor substrate; (b) implanting fluorine (F) or nitrogen (N) ions into the semiconductor device; (c) after the steps (a) and (b) are performed, executing first annealing with a heating time of 100 msec or shorter relative to a region of the semiconductor substrate into which ions were implanted; and (d) after the step (c) is performed, executing second annealing with a heating time longer than the heating time of the first annealing, relative to the region of the semiconductor substrate into which ions were implanted. The method for manufacturing a semiconductor device is provided which can dope boron (B) shallowly and at a high concentration.
摘要翻译：制造半导体器件的方法具有以下步骤：（a）将硼（B）离子注入到半导体衬底中; （b）将氟（F）或氮（N）离子注入到半导体器件中; （c）在执行步骤（a）和（b）之后，相对于其中注入离子的半导体衬底的区域，以100msec或更短的加热时间执行第一退火; 和（d）在执行步骤（c）之后，相对于其中注入离子的半导体衬底的区域，以比第一退火的加热时间长的加热时间执行第二退火。提供半导体器件的制造方法，其能够以高浓度浓缩硼（B）。

5. 发明授权

US07592243B2 Method of suppressing diffusion in a semiconductor device 有权
标题翻译：抑制半导体器件扩散的方法
公开(公告)号：US07592243B2
公开(公告)日：2009-09-22
申请号：US11260464
申请日：2005-10-28
申请人： Youichi Momiyama , Kenichi Okabe , Takashi Saiki , Hidenobu Fukutome
发明人： Youichi Momiyama , Kenichi Okabe , Takashi Saiki , Hidenobu Fukutome
IPC分类号： H01L21/425
CPC分类号： H01L29/66492 , H01L21/26506 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L29/6656 , H01L29/6659 , H04M15/8016 , H04M15/81 , H04M2215/0112 , H04M2215/2026 , H04M2215/22 , H04M2215/32 , H04M2215/7414 , H04W4/24
摘要： An impurity-diffused layer having an extension structure is formed first by implanting Sb ion as an impurity for forming a pocket region; then by implanting N as a diffusion-suppressive substance so as to produce two peaks in the vicinity of the interface with a gate electrode and at an amorphous/crystal interface which serves as an defect interface generated by the impurity in the pocket region; and by carrying out ion implantations for forming an extension region and deep source and drain regions.
摘要翻译：首先通过注入Sb离子作为形成袋区域的杂质来形成具有延伸结构的杂质扩散层; 然后通过将N作为扩散抑制物质注入，以便在与栅电极的界面附近产生两个峰，以及在作为由口袋区域中的杂质产生的缺陷界面的非晶/晶界面处产生两个峰; 并且通过进行用于形成延伸区域和深源极和漏极区域的离子注入。

6. 发明申请

US20070164375A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070164375A1
公开(公告)日：2007-07-19
申请号：US11438684
申请日：2006-05-23
申请人： Hiroyuki Ohta , Kenichi Okabe
发明人： Hiroyuki Ohta , Kenichi Okabe
IPC分类号： H01L29/76 , H01L21/8234
CPC分类号： H01L21/26506 , H01L21/26586 , H01L29/1083 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device comprises a field-effect transistor arranged in a semiconductor substrate, which transistor has a gate electrode, source/drain impurity diffusion regions, and carbon layers surrounding the source/drain impurity diffusion regions. Each of the carbon layers is provided at an associated of the source/drain impurity diffusion regions and positioned so as to be offset from the front edge of a source/drain extension in direction away from the gate electrode and to surround as profile the associated source/drain impurity diffusion region.
摘要翻译：半导体器件包括布置在半导体衬底中的场效应晶体管，该晶体管具有栅电极，源/漏杂质扩散区和围绕源极/漏极杂质扩散区的碳层。每个碳层设置在源极/漏极杂质扩散区域的相关联处，并且被定位成从远离栅电极的方向偏离源极/漏极延伸部的前边缘，并且作为轮廓围绕相关源 /漏杂质扩散区域。

7. 发明授权

US07227861B2 Packet switch device 失效
标题翻译：分组交换设备
公开(公告)号：US07227861B2
公开(公告)日：2007-06-05
申请号：US09805545
申请日：2001-03-13
申请人： Hiroshi Tomonaga , Masakatsu Nagata , Kenichi Kawarai , Naoki Matsuoka , Kenichi Okabe , Shiro Uriu
发明人： Hiroshi Tomonaga , Masakatsu Nagata , Kenichi Kawarai , Naoki Matsuoka , Kenichi Okabe , Shiro Uriu
IPC分类号： H04L12/56
CPC分类号： H04Q11/0421 , H04Q2213/1302 , H04Q2213/1304 , H04Q2213/13296
摘要： Packets input from input HWs #0 to #3 to a packet switch device are buried in time slots A through D. The packet switch device alternately switches the input packets in units of time slots, and inputs the packets to two 4×4 switches. The 4×4 switches make normal switching, and distribute the packets to respective output ports. Then, the packets output from the two 4×4 switches after being switched are alternately multiplexed, and output to output HWs #0 through #3. By making switching in units of packets as described above, a process overhead is prevented from being increased, and also expansion can be easily made. Besides, hardware scale can be made small.
摘要翻译：从输入HW＃0到＃3输入到分组交换设备的分组被掩埋在时隙A到D中。分组交换设备以时隙为单位交替地切换输入分组，并将分组输入到两个4×4交换机。 4x4交换机进行正常交换，并将数据包分配到相应的输出端口。然后，在切换之后从两个4×4交换机输出的分组交替复用，并输出到输出HW＃0至＃3。通过如上所述进行分组的切换，防止了处理开销的增加，并且也可以容易地进行扩展。此外，硬件规模可以减小。

8. 发明申请

US20060046372A1 Method of fabricating semiconductor a device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20060046372A1
公开(公告)日：2006-03-02
申请号：US11260464
申请日：2005-10-28
申请人： Youichi Momiyama , Kenichi Okabe , Takashi Saiki , Hidenobu Fukutome
发明人： Youichi Momiyama , Kenichi Okabe , Takashi Saiki , Hidenobu Fukutome
IPC分类号： H01L21/8238
CPC分类号： H01L29/66492 , H01L21/26506 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L29/6656 , H01L29/6659 , H04M15/8016 , H04M15/81 , H04M2215/0112 , H04M2215/2026 , H04M2215/22 , H04M2215/32 , H04M2215/7414 , H04W4/24
摘要： An impurity-diffused layer having an extension structure is formed first by implanting Sb ion as an impurity for forming a pocket region; then by implanting N as a diffusion-suppressive substance so as to produce two peaks in the vicinity of the interface with a gate electrode and at an amorphous/crystal interface which serves as an defect interface generated by the impurity in the pocket region; and by carrying out ion implantations for forming an extension region and deep source and drain regions.
摘要翻译：首先通过注入Sb离子作为形成袋区域的杂质来形成具有延伸结构的杂质扩散层; 然后通过将N作为扩散抑制物质注入，以便在与栅电极的界面附近产生两个峰，以及在作为由口袋区域中的杂质产生的缺陷界面的非晶/晶界面处产生两个峰; 并且通过进行用于形成延伸区域和深源极和漏极区域的离子注入。

9. 发明授权

US06947413B2 Switching apparatus, communication apparatus, and communication system 失效
标题翻译：交换装置，通信装置和通信系统
公开(公告)号：US06947413B2
公开(公告)日：2005-09-20
申请号：US09942314
申请日：2001-08-29
申请人： Tetsuaki Wakabayashi , Kenichi Okabe , Shiro Uriu , Hiroshi Tomonaga , Naoki Matsuoka
发明人： Tetsuaki Wakabayashi , Kenichi Okabe , Shiro Uriu , Hiroshi Tomonaga , Naoki Matsuoka
IPC分类号： H04L12/70 , H04L12/761 , H04L12/931 , H04L12/947 , H04L12/28
CPC分类号： H04L49/101 , H04L49/201 , H04L49/25
摘要： A switching apparatus that is used for high-speed large-capacity routing and a communication apparatus and communication system that are used for an efficient recursive multicast. A matrix switch performs self-routing on a packet on the basis of a tag including output route information set in the packet. Selectors are located so as to correspond to N output ports P#1 through P#N of the matrix switch and perform N-to-one selection control. Setting registers hold selection information used by the selectors to select a signal.
摘要翻译：用于高速大容量路由的交换装置和用于高效递归组播的通信装置和通信系统。矩阵开关基于包括在分组中设置的输出路由信息的标签在分组上执行自路由。选择器被定位成对应于矩阵开关的N个输出端口P＃1到P＃N，并执行N-1选择控制。设置寄存器保存选择器使用的选择信息来选择一个信号。

10. 发明授权

US06881653B2 Method of manufacturing CMOS semiconductor device 有权
标题翻译：制造CMOS半导体器件的方法
公开(公告)号：US06881653B2
公开(公告)日：2005-04-19
申请号：US10740430
申请日：2003-12-22
申请人： Manabu Kojima , Kenichi Goto , Hiroshi Morioka , Kenichi Okabe
发明人： Manabu Kojima , Kenichi Goto , Hiroshi Morioka , Kenichi Okabe
IPC分类号： H01L21/28 , H01L21/8238 , H01L27/092 , H01L29/423 , H01L29/49 , H01L21/20
CPC分类号： H01L21/823842
摘要： A method of manufacturing a CMOS semiconductor device able to reduce the effective thickness of the gate insulating film and able to secure stable performance is provided. The method in one embodiment comprises the steps of: forming a polycrystalline silicon film on a gate insulating film; introducing an n-type impurity into the polycrystalline silicon film in an nMOS formation region before gate processing of the polycrystalline silicon film; performing heat treatment so that the impurity diffuses in the polycrystalline silicon film and is activated; and patterning the polycrystalline silicon to form a gate pattern before introducing an impurity into the polycrystalline silicon film at a pMOS formation region.
摘要翻译：提供了能够降低栅极绝缘膜的有效厚度并能够确保稳定性能的CMOS半导体器件的制造方法。一个实施例中的方法包括以下步骤：在栅极绝缘膜上形成多晶硅膜; 在多晶硅膜的栅极处理之前，在nMOS形成区域中将n型杂质引入到多晶硅膜中; 进行热处理，使得杂质在多晶硅膜中扩散并被活化; 以及在pMOS形成区域向多晶硅膜中引入杂质之前，形成多晶硅以形成栅极图案。

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