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1. 发明申请

US20080197382A1 Metal-semiconductor field effect transistors (MESFETs) having self-aligned structures and methods of fabricating the same 有权
标题翻译：具有自对准结构的金属 - 半导体场效应晶体管（MESFET）及其制造方法
公开(公告)号：US20080197382A1
公开(公告)日：2008-08-21
申请号：US11706762
申请日：2007-02-15
申请人： Saptharishi Sriram , Jason Henning , Keith Wieber
发明人： Saptharishi Sriram , Jason Henning , Keith Wieber
IPC分类号： H01L29/12 , H01L21/338 , H01L29/80
CPC分类号： H01L29/1608 , H01L29/1029 , H01L29/66068 , H01L29/812
摘要： Metal-semiconductor field-effect transistors (MESFETS) are provided. A MESFET is provided having a source region, a drain region and a gate. The gate is between the source region and the drain region. A p-type conductivity layer is provided beneath the source region, the p-type conductivity layer being self-aligned to the gate. Related methods of fabricating MESFETs are also provided herein.
摘要翻译：提供了金属半导体场效应晶体管（MESFETS）。提供了具有源极区，漏极区和栅极的MESFET。栅极在源极区域和漏极区域之间。 p型导电层设置在源极区域的下方，p型导电层与栅极自对准。本文还提供了制造MESFET的相关方法。

2. 发明申请

US20080116464A1 Silicon-Rich Nickel-Silicide Ohmic Contacts for SIC Semiconductor Devices 有权
标题翻译：用于SIC半导体器件的富硅镍硅氧烷欧姆接触
公开(公告)号：US20080116464A1
公开(公告)日：2008-05-22
申请号：US12020731
申请日：2008-01-28
申请人： ALLAN WARD , JASON HENNING , HELMUT HAGLEITNER , KEITH WIEBER
发明人： ALLAN WARD , JASON HENNING , HELMUT HAGLEITNER , KEITH WIEBER
IPC分类号： H01L29/15
CPC分类号： H01L29/1608 , H01L21/0455 , H01L21/0485 , H01L29/45 , Y10S438/931
摘要： A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide surface at a temperature below which either element will react with silicon carbide and in respective proportions so that the atomic fraction of silicon in the deposited film is greater than the atomic fraction of nickel, and heating the deposited film of nickel and silicon to a temperature at which nickel-silicon compounds will form with an atomic fraction of silicon greater than the atomic fraction of nickel but below the temperature at which either element will react with silicon carbide. The method can further include the step of annealing the nickel-silicon compound to a temperature higher than the heating temperature for the deposited film, and within a region of the phase diagram at which free carbon does not exist.
摘要翻译：公开了一种制造欧姆接触和产生的欧姆接触结构的方法。该方法包括以下步骤：在碳化硅表面上形成沉积的镍和硅的膜，其温度低于任何一种元素将与碳化硅反应并以相应的比例使沉积膜中硅的原子比分数大于将镍和硅的原子分数加热至镍 - 硅化合物形成的温度，其中硅的原子分数大于镍的原子分数，但低于任一元素将与硅反应的温度碳化物。该方法还可以包括将镍硅化合物退火至高于沉积膜的加热温度的温度，并且在不存在游离碳的相图的区域内。

3. 发明授权

US07737476B2 Metal-semiconductor field effect transistors (MESFETs) having self-aligned structures 有权
标题翻译：具有自对准结构的金属 - 半导体场效应晶体管（MESFET）
公开(公告)号：US07737476B2
公开(公告)日：2010-06-15
申请号：US11706762
申请日：2007-02-15
申请人： Saptharishi Sriram , Jason Henning , Keith Wieber
发明人： Saptharishi Sriram , Jason Henning , Keith Wieber
IPC分类号： H01L29/80 , H01L31/112
CPC分类号： H01L29/1608 , H01L29/1029 , H01L29/66068 , H01L29/812
摘要： Metal-semiconductor field-effect transistors (MESFETS) are provided. A MESFET is provided having a source region, a drain region and a gate. The gate is between the source region and the drain region. A p-type conductivity layer is provided beneath the source region, the p-type conductivity layer being self-aligned to the gate. Related methods of fabricating MESFETs are also provided herein.
摘要翻译：提供了金属半导体场效应晶体管（MESFETS）。提供了具有源极区，漏极区和栅极的MESFET。栅极在源极区域和漏极区域之间。 p型导电层设置在源极区域的下方，p型导电层与栅极自对准。本文还提供了制造MESFET的相关方法。

4. 发明申请

US20060006393A1 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices 审中-公开
标题翻译：用于SiC半导体器件的富含硅的硅化镍欧姆接触
公开(公告)号：US20060006393A1
公开(公告)日：2006-01-12
申请号：US10884930
申请日：2004-07-06
申请人： Allan Ward , Jason Henning , Helmut Hagleitner , Keith Wieber
发明人： Allan Ward , Jason Henning , Helmut Hagleitner , Keith Wieber
IPC分类号： H01L29/15
CPC分类号： H01L29/1608 , H01L21/0455 , H01L21/0485 , H01L29/45 , Y10S438/931
摘要： A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide surface at a temperature below which either element will react with silicon carbide and in respective proportions so that the atomic fraction of silicon in the deposited film is greater than the atomic fraction of nickel, and heating the deposited film of nickel and silicon to a temperature at which nickel-silicon compounds will form with an atomic fraction of silicon greater than the atomic fraction of nickel but below the temperature at which either element will react with silicon carbide. The method can further include the step of annealing the nickel-silicon compound to a temperature higher than the heating temperature for the deposited film, and within a region of the phase diagram at which free carbon does not exist.
摘要翻译：公开了一种制造欧姆接触和产生的欧姆接触结构的方法。该方法包括以下步骤：在碳化硅表面上形成沉积的镍和硅的膜，其温度低于任何一种元素将与碳化硅反应并以相应的比例使沉积膜中硅的原子比分数大于将镍和硅的原子分数加热至镍 - 硅化合物形成的温度，其中硅的原子分数大于镍的原子分数，但低于任一元素将与硅反应的温度碳化物。该方法还可以包括将镍硅化合物退火至高于沉积膜的加热温度的温度，并且在不存在游离碳的相图的区域内。

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