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    • 1. 发明授权
    • Process for manufacturing a plurality of strip lead frame semiconductor
devices
    • 用于制造多个带状引线框半导体器件的工艺
    • US5661086A
    • 1997-08-26
    • US584299
    • 1996-01-11
    • Takashi NakashimaKeiji TakaiKouji Tateishi
    • Takashi NakashimaKeiji TakaiKouji Tateishi
    • H01L21/48H01L23/13H01L23/31H01L23/498H01L21/52H01L21/58H01L21/60
    • H01L23/49811H01L21/4803H01L21/4846H01L23/13H01L23/3128H01L2224/45144H01L2224/48091H01L2224/73265H01L24/45H01L24/48H01L2924/00014H01L2924/01078H01L2924/01079H01L2924/07802H01L2924/14H01L2924/15153H01L2924/1517H01L2924/15311H01L2924/1532H01L2924/181Y10T29/49121
    • Method for producing semiconductor devices comprises a first step in which a plurality of metal substrates each of which is provided with a die mounting region at a central portion thereof are connected in series to produce a train of connected metal substrates by means of first connecting tabs and a pair of first side rails each of which is provided with first positioning pilot apertures are connected to the train by means of second connecting tabs to produce a metal substrate frame, a second step in which a plurality of circuit substrates each of which is provided with a lead pattern around an opening formed at the central portion thereof are connected in series by means of third connecting tabs to produce a train of connected circuit substrates and a pair of second side rails each of which is provided with second positioning pilot apertures are connected by fourth connecting tabs to produce a circuit substrate frame, a third step in which both frames are alinged with each other making use of the first and second positioning pilot apertures and are adhered with each other to produce a die mounting substrate frame, and a fourth step in which a semiconductor die is received in a cavity defined by the die mounting region and the opening of each die mounting substrate and solder balls are connected to terminal pads which form one ends of the lead pattern while pads of the semiconductor die are connected to wire bonding pads which form other ends of the lead pattern, and connecting tabs are removed so as to produce separate semiconductor devices.
    • 用于制造半导体器件的方法包括:第一步骤,其中在其中心部分设置有管芯安装区域的多个金属基板串联连接,以通过第一连接突片和 一对第一侧轨,每个第一侧轨设置有第一定位导向孔,通过第二连接翼连接到列上,以产生金属基底框架;第二步,其中多个电路基板设置有 围绕其中心部分形成的开口周围的引线图案通过第三连接突片串联连接,以产生一系列连接的电路基板和一对第二侧轨,每个第二侧轨设置有第二定位导向孔, 第四连接片以产生电路衬底框架,第三步骤,其中两个框架彼此相互嵌合 使用第一和第二定位导向孔并彼此粘合以产生模具安装基板框架,以及第四步骤,其中半导体管芯被容纳在由管芯安装区域和每个管芯的开口限定的空腔中 安装基板和焊球连接到形成引线图案的一端的端子焊盘,而半导体管芯的焊盘连接到形成引线图案的另一端的引线接合焊盘,并且连接接线片被移除以产生单独的半导体 设备。
    • 4. 发明授权
    • Method of producing a frame made of connected semiconductor die mounting
substrates
    • 制造由连接的半导体管芯安装基板制成的框架的方法
    • US5614443A
    • 1997-03-25
    • US622144
    • 1996-03-27
    • Takashi NakashimaKeiji TakaiKouji Tateishi
    • Takashi NakashimaKeiji TakaiKouji Tateishi
    • H01L23/12H01L21/98H01L23/50H01L23/538H01L25/065H01L21/60
    • H01L25/50H01L23/5385H01L25/0655H01L2924/0002Y10T156/1057Y10T29/4921Y10T29/49222
    • Method of producing a frame made of connected semiconductor die mounting substrates comprises i) a first step for producing a metal substrate sheet wherein an original material for metal substrate sheet of a desired size is cut out from a metal material and an erosion preventing layer is provided on the entire surface thereof, ii) a second step for producing a circuit substrate sheet wherein the circuit substrate sheet is made of a resin substrate coated with a copper leaf layer and is provided with a lead pattern on the surface thereof in place, iii) a third step for producing a connected semiconductor die mounting substrate sheet by adhering the metal substrate sheet to the circuit substrate sheet, iv) a fourth step for forming a plurality of pilot apertures and slits on the connected semiconductor die mounting substrate sheet by press working and v) a fifth step for producing a plurality of connected semiconductor die mounting substrate frames by separating the connected semiconductor die mounting substrate sheet.
    • 制造由连接的半导体管芯安装基板制成的框架的方法包括:i)制造金属基片的第一步骤,其中提供从金属材料切割所需尺寸的金属基片的原始材料和防腐蚀层 在其整个表面上,ii)用于制造电路基片的第二步骤,其中电路基片由涂有铜箔层的树脂基片制成,并在其表面上设有引线图案,iii) 第三步骤,通过将金属基片粘附到电路基片上来制造连接的半导体管芯安装基片; iv)第四步骤,用于通过冲压加工在连接的半导体管芯安装基片上形成多个引导孔和狭缝, v)通过分离连接的半导体来生产多个连接的半导体管芯安装衬底框架的第五步骤 或模具安装基板。