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1. 发明授权

US07494885B1 Disposable spacer process for field effect transistor fabrication 有权
标题翻译：场效应晶体管制造的一次性间隔工艺
公开(公告)号：US07494885B1
公开(公告)日：2009-02-24
申请号：US10818155
申请日：2004-04-05
申请人： Mario M. Pelella , Darin A. Chan , Kei-Leong Ho , Lu You
发明人： Mario M. Pelella , Darin A. Chan , Kei-Leong Ho , Lu You
IPC分类号： H01L21/00
CPC分类号： H01L29/6659 , H01L29/41775 , H01L29/6653 , H01L29/6656 , H01L29/7833
摘要： According to one exemplary embodiment, a method for forming a field effect transistor on a substrate comprises a step of forming disposable spacers adjacent to a gate stack situated on the substrate, where the disposable spacers comprise amorphous carbon. The disposable spacers can be formed by depositing a layer of amorphous carbon on the gate stack and anisotropically etching the layer of amorphous carbon. The method further comprises forming source and drain regions in the substrate, where the source and drain regions are situated adjacent to the disposable spacers. According to this exemplary embodiment, the method further comprises removing the disposable spacers, where the removal of the disposable spacers causes substantially no gouging in the substrate. The disposable spacers can be removed by using a dry etch process. The method can further comprise forming extension regions in the substrate adjacent to the gate stack prior to forming the disposable spacers.
摘要翻译：根据一个示例性实施例，用于在衬底上形成场效应晶体管的方法包括形成邻近位于衬底上的栅极堆叠的一次性间隔物的步骤，其中一次性间隔物包括无定形碳。可以通过在栅极堆叠上沉积无定形碳层并且各向异性地蚀刻无定形碳层来形成一次性间隔物。该方法还包括在衬底中形成源极和漏极区域，其中源极区域和漏极区域邻近一次性间隔物定位。根据该示例性实施例，该方法还包括去除一次性间隔件，其中一次性间隔件的移除基本上不引起基板中的气刨。可以通过使用干法蚀刻工艺去除一次性间隔物。该方法还可以包括在形成一次性间隔件之前在邻近栅极堆叠的基板中形成延伸区域。

2. 发明授权

US06670227B1 Method for fabricating devices in core and periphery semiconductor regions using dual spacers 有权
标题翻译：使用双间隔物在芯部和外围半导体区域中制造器件的方法
公开(公告)号：US06670227B1
公开(公告)日：2003-12-30
申请号：US10361455
申请日：2003-02-10
申请人： Hsiao-Han Thio , Kei-Leong Ho
发明人： Hsiao-Han Thio , Kei-Leong Ho
IPC分类号： H01L218238
CPC分类号： H01L27/11534 , H01L21/823418 , H01L21/823468 , H01L27/105 , H01L27/11526 , H01L29/6653
摘要： For fabricating a first device within a core region and a second device within a periphery region, of a semiconductor substrate, disposable spacers having a first width are formed at sidewalls of a first gate stack of the core region and a second gate stack of the periphery region. Drain and source junctions of the second device are formed in the periphery region to the sides of the disposable spacers of the second gate stack. The disposable spacers are removed and permanent spacers having a second width are formed at the sidewalls of the first and second gate stacks, with the second width being less than the first width. Silicide is formed with an exposed portion of a drain bit line junction within the core region after forming the permanent spacers.
摘要翻译：为了在芯区域内的第一器件和周边区域内的第二器件的半导体衬底中制造具有第一宽度的一次性间隔物，形成在芯区域的第一栅极堆叠的侧壁和周边的第二栅极堆叠地区。第二器件的漏极和源极结形成在第二栅极堆叠的一次性间隔物的边缘的周边区域中。去除一次性间隔件，并且在第一和第二栅极堆叠的侧壁处形成具有第二宽度的永久性间隔物，其中第二宽度小于第一宽度。在形成永久间隔物之后，在芯区域内形成硅化物与漏极位线结的露出部分。

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