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1. 发明授权

US08679973B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08679973B2
公开(公告)日：2014-03-25
申请号：US11870852
申请日：2007-10-11
申请人： Shinichi Akiyama , Kazuo Kawamura , Masanori Uchida
发明人： Shinichi Akiyama , Kazuo Kawamura , Masanori Uchida
IPC分类号： H01L21/44
CPC分类号： H01L29/66545 , H01L21/28518 , H01L21/28556 , H01L21/32134 , H01L21/76843 , H01L21/76862 , H01L21/76864 , H01L21/823807 , H01L21/823814 , H01L21/823835 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7848
摘要： The method of manufacturing the semiconductor device comprises forming a transistor including a gate electrode and a source/drain diffused layer over a semiconductor substrate, forming a nickel platinum film over the semiconductor substrate, covering the gate electrode and the source/drain diffused layer, making a first thermal processing to react the nickel platinum film with the source/drain diffused layer to form a nickel platinum silicide film, and removing an unreacted part of the nickel platinum film using a chemical liquid of 71° C. or more containing hydrogen peroxide.
摘要翻译：制造半导体器件的方法包括在半导体衬底上形成包括栅电极和源极/漏极扩散层的晶体管，在半导体衬底上形成覆盖栅电极和源极/漏极扩散层的镍铂膜，使镍铂膜与源极/漏极扩散层反应以形成镍铂硅化物膜的第一热处理，以及使用含有过氧化氢的71℃以上的化学液体除去未反应的镍铂膜的部分。

2. 发明授权

US08536708B2 Method of manufacturing a semiconductor device and semiconductor device 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US08536708B2
公开(公告)日：2013-09-17
申请号：US13605020
申请日：2012-09-06
申请人： Shinichi Akiyama , Kazuo Kawamura , Hisaya Sakai , Hirofumi Watatani , Kazuya Okubo
发明人： Shinichi Akiyama , Kazuo Kawamura , Hisaya Sakai , Hirofumi Watatani , Kazuya Okubo
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/53238 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76865 , H01L21/76873 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
摘要翻译：制造半导体器件的方法在电介质膜中形成位于第一开口中的第一开口和第二开口，在整个表面上形成含有第一金属的第一金属膜，在底部蚀刻第一金属膜的第二开口，并且在整个表面上形成含有第二金属的第二金属膜，并且在第二开口和第一开口中埋入导电材料。

3. 发明授权

US08338953B2 Method of manufacturing a semiconductor device and semiconductor device 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US08338953B2
公开(公告)日：2012-12-25
申请号：US13164180
申请日：2011-06-20
申请人： Shinichi Akiyama , Kazuo Kawamura , Hisaya Sakai , Hirofumi Watatani , Kazuya Okubo
发明人： Shinichi Akiyama , Kazuo Kawamura , Hisaya Sakai , Hirofumi Watatani , Kazuya Okubo
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/53238 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76865 , H01L21/76873 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
摘要翻译：制造半导体器件的方法在电介质膜中形成位于第一开口中的第一开口和第二开口，在整个表面上形成含有第一金属的第一金属膜，在底部蚀刻第一金属膜的第二开口，并且在整个表面上形成含有第二金属的第二金属膜，并且在第二开口和第一开口中埋入导电材料。

4. 发明授权

US08148262B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08148262B2
公开(公告)日：2012-04-03
申请号：US12793216
申请日：2010-06-03
申请人： Shinichi Akiyama , Kazuya Okubo , Yusuke Morisaki , Youichi Momiyama
发明人： Shinichi Akiyama , Kazuya Okubo , Yusuke Morisaki , Youichi Momiyama
IPC分类号： H01L21/44
CPC分类号： H01L29/665 , H01L21/2686 , H01L21/28052 , H01L21/28097 , H01L21/28518 , H01L21/76816 , H01L21/76834 , H01L21/76897 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L21/823857 , H01L29/4975
摘要： A method of manufacturing a semiconductor device includes forming a gate electrode, a source region and a drain region, forming a first metal layer, forming silicide layers by first annealing, removing a remainder of the first metal layer after the first annealing, performing a second annealing, forming a second metal layer, performing a third annealing, and removing a remainder of the second metal layer.
摘要翻译：一种制造半导体器件的方法包括：形成栅电极，源区和漏区，形成第一金属层，通过第一退火形成硅化物层，在第一退火之后除去第一金属层的剩余部分，执行第二金属层退火，形成第二金属层，进行第三退火，以及除去第二金属层的剩余部分。

5. 发明授权

US08123108B2 Method of manufacturing semiconductor device and wire bonding apparatus 有权
公开(公告)号：US08123108B2
公开(公告)日：2012-02-28
申请号：US13014109
申请日：2011-01-26
申请人： Shinichi Akiyama , Hiroaki Yoshino , Shinsuke Tei
发明人： Shinichi Akiyama , Hiroaki Yoshino , Shinsuke Tei
IPC分类号： B23K31/02
CPC分类号： H01L24/85 , B23K20/007 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/05553 , H01L2224/45015 , H01L2224/45144 , H01L2224/4809 , H01L2224/48091 , H01L2224/48245 , H01L2224/48247 , H01L2224/48455 , H01L2224/48465 , H01L2224/78301 , H01L2224/85 , H01L2224/8518 , H01L2224/85205 , H01L2224/85986 , H01L2924/01006 , H01L2924/01019 , H01L2924/01033 , H01L2924/01051 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/00014 , H01L2924/00
摘要： A terminal of a compact wire loop with a great strength of bonding is formed by a method including: a first folding step in which a tip end of a capillary is raised by a height of H1 from a point 86a where the center of the capillary is positioned during second bonding on a lead 74 to a point “p”, and then moved horizontally by a first distance of L1 toward a pad 73, and lowered to a point “r”; a second folding step in which the tip end of the capillary is raised from the point “r” to a height of H2 and then moved horizontally toward the lead 74 by a second distance of L2; and a third bonding step in which the center of the capillary is aligned with and then lowered to a point 87a on the lead 74 adjacent to the point 86a.

6. 发明申请

US20110174230A1 FERTILIZED EGGS COLLECTION APPARATUS 审中-公开
标题翻译：肥料收集装置
公开(公告)号：US20110174230A1
公开(公告)日：2011-07-21
申请号：US13121627
申请日：2009-12-03
申请人： Yutaka Tamaru , Hideo Miyake , Shinichi Akiyama , Masaru Obata , Tsuneaki Ueta
发明人： Yutaka Tamaru , Hideo Miyake , Shinichi Akiyama , Masaru Obata , Tsuneaki Ueta
IPC分类号： A01K61/00
CPC分类号： A01K61/17 , Y02A40/816
摘要： A fertilized eggs collection apparatus for injecting genes, which is superior in safety and productivity. It is realized by simple structure. Fertilized eggs are collected from drainage with the fertilized egg in a water tank. The collection is synchronized for starting of illumination to the water tank. A probability that that feces included in the water is mixed in the collected fertilized eggs can hereby be reduced. Water including the fertilized eggs is accumulated on a fertilized-egg-holding-plate. The fertilized-egg-holding-plate has each concave portion holding one fertilized egg each. Water in the concave portions is drained from a through-hole. The fertilized-egg-holding-plate is accommodated in a case having a bottom plate portion. The case keeps water for the fertilized eggs. A shutter plate capable of sliding is disposed on the fertilized-egg-holding-plate. The shutter plate prevents that the fertilized eggs jump out from the concave portions of the fertilized-egg-holding-plate.
摘要翻译：用于注射基因的受精卵收集装置，其安全性和生产力优越。通过简单的结构实现。受精卵从水中从受精卵中排出。收集同步开始照明到水箱。可以减少包含在水中的粪便在收集的受精卵中混合的可能性。包括受精卵在内的水被积聚在受精卵保持盘上。受精卵保持板各自具有保持一个受精卵的凹部。凹部中的水从通孔排出。受精卵保持板容纳在具有底板部分的壳体中。这种情况保持受精卵的水分。能够滑动的挡板设置在受精卵保持板上。快门板防止受精卵从受精卵保持板的凹部跳出。

7. 发明申请

US20100330812A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100330812A1
公开(公告)日：2010-12-30
申请号：US12819708
申请日：2010-06-21
申请人： Shinichi Akiyama , Kazuya Okubo , Nobuyuki Ohtsuka
发明人： Shinichi Akiyama , Kazuya Okubo , Nobuyuki Ohtsuka
IPC分类号： H01L21/31
CPC分类号： H01L21/02109 , H01L21/02178 , H01L21/02181 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/02321 , H01L21/823857
摘要： A method for manufacturing a semiconductor device includes forming a first-conductivity-type well and a second-conductivity-type well in a silicon substrate; stacking a first high-dielectric-constant insulating film and a first cap dielectric film above the silicon substrate; removing at least the first cap dielectric film from above the second-conductivity-type well; conducting a first annealing at a first temperature to cause an element included in the first cap dielectric film to diffuse into the first high-dielectric-constant insulating film disposed above the first-conductivity-type well; after the first annealing, stacking a second high-dielectric-constant insulating film and a second cap dielectric film above the silicon substrate; removing the second cap dielectric film disposed above the first-conductivity-type well; and conducting a second annealing at a second temperature lower than the first temperature to cause an element included in the second cap dielectric film to diffuse into the second high-dielectric-constant insulating film disposed above the second-conductivity-type well.
摘要翻译：一种制造半导体器件的方法包括在硅衬底中形成第一导电型阱和第二导电型阱; 在硅衬底之上堆叠第一高介电常数绝缘膜和第一帽电介质膜; 从所述第二导电型阱的上方至少去除所述第一盖电介质膜; 在第一温度下进行第一退火，使包含在第一盖电介质膜中的元素扩散到位于第一导电型阱之上的第一高介电常数绝缘膜; 在第一退火之后，在硅衬底上层叠第二高介电常数绝缘膜和第二帽电介质膜; 去除设置在第一导电型阱之上的第二盖电介质膜; 以及在比所述第一温度低的第二温度下进行第二退火，以使包含在所述第二盖电介质膜中的元素扩散到位于所述第二导电型阱之上的所述第二高介电常数绝缘膜中。

8. 发明授权

US07661576B2 Wire bonding method 失效
标题翻译：接线方式
公开(公告)号：US07661576B2
公开(公告)日：2010-02-16
申请号：US12283383
申请日：2008-09-10
申请人： Tatsunari Mii , Shinichi Akiyama
发明人： Tatsunari Mii , Shinichi Akiyama
IPC分类号： B23K31/02
CPC分类号： H01L24/85 , B23K20/002 , B23K2101/40 , H01L24/48 , H01L24/78 , H01L2224/05599 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48465 , H01L2224/78301 , H01L2224/85181 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/15787 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： A wire bonding method that connects a first bonding point and a second bonding point by a wire, the method including a step that press-bonds a ball formed on a tip end of a wire to a first bonding point, thus forming a press-bonded ball; a step that slightly raises a capillary, moves the capillary toward a second bonding point and then lowers the capillary by an amount that is smaller than an amount in which the capillary was raised, and a step that raises the capillary to allow the wire to be paid out of the capillary and moves the capillary toward a second bonding point, thus connecting the wire to the second bonding point.
摘要翻译：一种通过线连接第一接合点和第二接合点的引线接合方法，该方法包括将形成在线的前端上的球压接到第一接合点的步骤，从而形成压接球; 稍微升高毛细管的步骤，将毛细管移动到第二粘合点，然后使毛细管降低小于毛细管升高量的量，以及使毛细管升高以允许丝线为从毛细管中取出并将毛细管移动到第二粘合点，从而将导线连接到第二接合点。

9. 发明申请

US20080265417A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080265417A1
公开(公告)日：2008-10-30
申请号：US12031826
申请日：2008-02-15
申请人： Kazuo KAWAMURA , Shinichi Akiyama , Satoshi Takesako
发明人： Kazuo KAWAMURA , Shinichi Akiyama , Satoshi Takesako
IPC分类号： H01L23/48 , H01L21/44 , H01L21/336
CPC分类号： H01L21/28518 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76873 , H01L21/76897 , H01L21/823412 , H01L21/823418 , H01L21/823475 , H01L23/485 , H01L23/53238 , H01L29/665 , H01L29/66537 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7834 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device, includes the steps of forming an insulating film on a semiconductor substrate having a silicide layer, forming a hole in the insulating film on the silicide layer, cleaning an inside of the hole and a surface of the silicide layer, forming a titanium layer on a bottom surface and an inner peripheral surface of the hole by a CVD method, forming a copper diffusion preventing barrier metal layer on the titanium layer in the hole, and burying a copper layer in the hole.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在具有硅化物层的半导体衬底上形成绝缘膜，在硅化物层上的绝缘膜上形成空穴，清洁孔的内部和硅化物层的表面通过CVD法在孔的底面和内周面上形成钛层，在孔内的钛层上形成铜扩散防止阻挡金属层，在该孔内埋设铜层。

10. 发明申请

US20050086827A1 Drying machine 有权
标题翻译：烘干机
公开(公告)号：US20050086827A1
公开(公告)日：2005-04-28
申请号：US10932310
申请日：2004-09-02
申请人： Etsushi Nagae , Hiroshi Mukaiyama , Koji Ono , Masaya Tadano , Tetsuya Masuda , Kazuyoshi Tomochika , Takahiro Nakamura , Masakatsu Morishige , Harumi Takeuchi , Kiyokazu Fujikawa , Tamotsu Kawamura , Motohiko Kosano , Shinichi Akiyama , Nobuo Koumoto
发明人： Etsushi Nagae , Hiroshi Mukaiyama , Koji Ono , Masaya Tadano , Tetsuya Masuda , Kazuyoshi Tomochika , Takahiro Nakamura , Masakatsu Morishige , Harumi Takeuchi , Kiyokazu Fujikawa , Tamotsu Kawamura , Motohiko Kosano , Shinichi Akiyama , Nobuo Koumoto
IPC分类号： F25B1/00 , D06F58/02 , D06F58/20 , F25B9/00 , F25B39/04 , F26B11/02 , F26B21/04 , F26B21/08 , F28D1/047 , F28F1/32 , F25B7/00
CPC分类号： D06F58/206 , D06F58/02 , F25B9/008 , F25B2309/061 , F26B11/028 , F26B21/086 , F28D1/0477 , F28D2021/0073 , F28F1/32
摘要： A washing/drying machine has objects to shorten a time required for a washing operation, to improve a heat exchange capability in a radiator and an evaporator, and to shorten a drying time for things to be dried, and comprises: an accommodating chamber in which things to be washed (things to be dried) are accommodated and in which a drying operation of the things to be washed is performed; a refrigerant circuit in which a compressor, a gas cooler, a decompression device, an evaporator and the like are successively connected to one another in an annular form via a piping and in which carbon dioxide is used as a refrigerant and which has a supercritical pressure on a high pressure side thereof; and blower means for blowing air which has exchanged heat with the radiator into the accommodating chamber to allow the air passed through the accommodating chamber to exchange the heat with the evaporator, wherein the blower means constitutes a circulation direction of the air passed through the gas cooler, and that of the refrigerant flowing in the gas cooler in such a manner as to form a counter-flow, and constitutes a circulation direction of the air passed through the evaporator, and that of the refrigerant flowing in the evaporator in such a manner as to form a counter-flow.
摘要翻译：洗涤干燥机具有缩短洗涤操作所需时间的目的，提高散热器和蒸发器的热交换能力，缩短干燥时间的干燥时间，其特征在于，包括：容纳室，要洗涤的东西（要干燥的东西）被容纳，并且进行洗涤的物品的干燥操作; 其中压缩机，气体冷却器，减压装置，蒸发器等经由管道相互连接成环状的制冷剂回路，其中使用二氧化碳作为制冷剂，并且具有超临界压力在其高压侧; 以及鼓风机装置，其将与散热器进行热交换的空气吹送到容纳室中，以允许通过容纳室的空气与蒸发器交换热量，其中鼓风装置构成通过气体冷却器的空气的循环方向以及在气体冷却器中以形成逆流的方式流动的制冷剂的制冷剂，并构成通过蒸发器的空气的循环方向和在蒸发器中流动的制冷剂的循环方向，形成逆流。

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