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1. 发明申请

US20090169682A1 Functional Masticatory Material, Method Of Producing The Same And Method Of Using The Same 审中-公开
标题翻译：功能性咀嚼材料，其制造方法及其使用方法
公开(公告)号：US20090169682A1
公开(公告)日：2009-07-02
申请号：US12089921
申请日：2006-10-13
申请人： Fumio Okumura , Kazuya Kubo
发明人： Fumio Okumura , Kazuya Kubo
IPC分类号： A23L1/30 , A23L1/28 , A23L1/304 , A23L1/305
CPC分类号： A61K9/0058 , A23G3/44 , A23J3/18 , A23L33/10 , A23L33/105 , A23L33/185 , A23P10/20 , A23P10/28 , A23V2002/00 , A61K47/10 , A61K47/42 , A23V2250/5486 , A23V2250/548
摘要： Tableting or granulating is conducted using prolamine, wheat gluten and a functional material or materials as raw materials. The functional masticatory product has elasticity and extensibility through inclusion of saliva during mastication, has edibility and has mastication time longer than that of gummi candy. Thus, varied mastication time longer than that of gummi candy can be provided and the functional material or materials can be sufficiently ingested without depending on natures of the same such as water solubility.
摘要翻译：使用谷醇溶蛋白，小麦面筋和功能材料或原料作为原料进行压片或造粒。功能性咀嚼产品通过在咀嚼期间包含唾液具有弹性和延展性，具有可咀嚼性，并且具有比口香糖更长的咀嚼时间。因此，可以提供比口香糖更长的咀嚼时间，并且功能材料或材料可以在不依赖于水溶性的性质的情况下充分摄取。

2. 发明授权

US10263251B2 Battery negative electrode, battery, and manufacturing method of battery negative electrode 有权
公开(公告)号：US10263251B2
公开(公告)日：2019-04-16
申请号：US15459871
申请日：2017-03-15
申请人： Tomohiro Ueno , Kazuya Kubo , Hiroshi Kawano , Toshio Takahashi , EXERGY POWER SYSTEMS, INC.
发明人： Tomohiro Ueno , Kazuya Kubo , Hiroshi Kawano , Toshio Takahashi , Kaduo Tsutsumi
IPC分类号： H01M4/00 , H01M4/38 , B22F9/04 , C22C19/03 , C22F1/10 , H01M4/04 , H01M4/52 , H01M10/26 , H01M10/34 , H01M4/02
摘要： A battery negative electrode includes a hydrogen storage alloy as a negative electrode active material, wherein the hydrogen storage alloy has a mean volume diameter within a range from 4 μm to 12 μm, and is disposed to be capable of being in contact with hydrogen in a hydrogen containing part in which hydrogen is contained.

3. 发明申请

US20150013958A1 AIR-CONDITIONING SYSTEM 有权
标题翻译：空调系统
公开(公告)号：US20150013958A1
公开(公告)日：2015-01-15
申请号：US14375893
申请日：2013-01-17
申请人： Kazuya Kubo
发明人： Kazuya Kubo
IPC分类号： F24F11/00 , F24D19/10 , F24D15/04
CPC分类号： F24F11/30 , F24D15/04 , F24D19/1087 , F24F11/64 , F24F11/70 , F24F11/77 , F24F2110/10 , F24F2110/12 , F24F2120/10 , F24F2140/50 , F24F2140/60 , Y02B30/12 , Y02B30/746
摘要： A controller sets a target setting temperature for an air-conditioning space, compares a value obtained by subtracting an outdoor temperature detected by an outdoor temperature sensor from the target setting temperature, with a first threshold related to the value, compares a value obtained by subtracting the outdoor temperature from an indoor temperature detected by an indoor temperature sensor, with a second threshold related to the value, compares a value obtained by subtracting a heat load in the air-conditioning space from a cooling capacity, with a third threshold related to the value, and controls operation of a heat pump type air-conditioning device and a ventilating device on the basis of these comparison results. The first threshold, the second threshold, and the third threshold are set in accordance with the number of people detected by a human detection sensor.
摘要翻译：控制器设定空调空间的目标设定温度，将从室内温度传感器检测到的室外温度减去的目标值与目标设定温度相比较的值与与该值相关的第一阈值进行比较，将通过减去从室内温度传感器检测到的室内温度的室外温度与与该值相关的第二阈值将从空调空间中减去热负荷所得的值与制冷量相比较，将与第价值，并根据这些比较结果控制热泵式空调装置和通风装置的运转。根据人检测传感器检测到的人数来设定第一阈值，第二阈值和第三阈值。

4. 发明申请

US20090269275A1 PRODUCING METHOD OF HYDROGEN STORAGE ALLOY 审中-公开
标题翻译：氢储存合金的生产方法
公开(公告)号：US20090269275A1
公开(公告)日：2009-10-29
申请号：US12067787
申请日：2006-09-11
申请人： Kazuya Kubo , Toshiki Kabutomori , Soumei Oonuki , Hironobu Arashima , Kunihiko Hashi , Hideaki Ito
发明人： Kazuya Kubo , Toshiki Kabutomori , Soumei Oonuki , Hironobu Arashima , Kunihiko Hashi , Hideaki Ito
IPC分类号： C01B3/02
CPC分类号： H01M4/383 , B22F9/04 , B22F2998/10 , C22C1/00 , C22C1/0491 , C22C30/00 , C22F1/18 , H01M8/04216 , H01M8/065 , B22F9/06 , B22F1/0085 , B22F9/023
摘要： The invention intends to provide a hydrogen storage alloy that can absorb and release hydrogen effectively at room temperature and shows excellent hydrogen storage amount and effective hydrogen transfer amount and furthermore shows excellent endurance.A pulverized hydrogen storage alloy powder is heated at 600° C. or more and 1200° C. or less for 10 min to 30 hr to apply strain relief annealing. A particle diameter of the hydrogen storage alloy powder is desirably 10 μm or less and the hydrogen storage alloy is desirably mainly composed of a BCC phase. Since the initial strain ahead of the hydrogenation is removed, a solid solution region of hydrogen is largely reduced and an initial hydrogen storage amount and an effective hydrogen transfer amount are increased. Owing to the pulverization, the strains are largely reduced from accumulating and propagating, the strains at the hydrogen storage are largely reduced from generating, an absorption plateau is largely increased, in addition thereto, the deterioration rate due to repetition of hydrogen storage and release can be largely improved.
摘要翻译：本发明提供一种能够在室温下有效吸收和释放氢的储氢合金，显示出优异的储氢量和有效的氢转移量，并且还显示出优异的耐久性。将粉碎的储氢合金粉末在600℃以上1200℃以下加热10分钟〜30小时，进行应变消除退火。储氢合金粉末的粒径优选为10μm以下，希望主要由BCC相组成。由于氢化之前的初始应变被去除，氢的固溶区域大大降低，并且初始储氢量和有效氢转移量增加。由于粉碎，菌株在积累和繁殖中大大减少，储氢时的菌株大量减少，吸收平台大大增加，除此之外，由于重复储氢释放而导致的劣化率大大改善。

5. 发明授权

US6143609A Method for forming semiconductor memory device 失效
标题翻译：半导体存储器件形成方法
公开(公告)号：US6143609A
公开(公告)日：2000-11-07
申请号：US824476
申请日：1996-12-02
申请人： Kazuo Sato , Kenji Ueda , Michio Morita , Fumihiko Noro , Kyoko Miyamoto , Hideaki Onishi , Kazuo Umeda , Kazuya Kubo
发明人： Kazuo Sato , Kenji Ueda , Michio Morita , Fumihiko Noro , Kyoko Miyamoto , Hideaki Onishi , Kazuo Umeda , Kazuya Kubo
IPC分类号： H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324 , H01L29/66825 , H01L29/7883
摘要： A floating gate type semiconductor memory and method of manufacture are described including an erasing gate electrode in which a tunneling region can be formed easily and high reliability can be kept. An active region isolated by element isolation insulating films is formed on a semiconductor substrate. A gate insulating film and a floating gate electrode are sequentially formed on the active region. A control gate electrode is formed above the floating gate electrode with a silicon oxide film disposed therebetween. A tunneling insulating film is formed only on the side wall of the floating gate electrode. Then, an erasing gate electrode is formed so as to cover the tunneling insulating film.
摘要翻译：描述了浮栅型半导体存储器及其制造方法，其特征在于包括能够容易地形成隧道区域的擦除栅极电极，并且可以保持高的可靠性。在半导体衬底上形成由元件隔离绝缘膜隔离的有源区。在有源区上依次形成栅极绝缘膜和浮栅电极。在浮置栅电极的上方形成有控制栅电极，其间配置有氧化硅膜。隧道绝缘膜只形成在浮栅电极的侧壁上。然后，形成擦除栅电极以覆盖隧道绝缘膜。

6. 发明授权

US5838039A Semiconductor memory having a tunneling region 失效
标题翻译：具有隧道区域的半导体存储器
公开(公告)号：US5838039A
公开(公告)日：1998-11-17
申请号：US677651
申请日：1996-07-08
申请人： Kazuo Sato , Kenji Ueda , Michio Morita , Fumihiko Noro , Kyoko Miyamoto , Hideaki Onishi , Kazuo Umeda , Kazuya Kubo
发明人： Kazuo Sato , Kenji Ueda , Michio Morita , Fumihiko Noro , Kyoko Miyamoto , Hideaki Onishi , Kazuo Umeda , Kazuya Kubo
IPC分类号： H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792 , H01L29/78 , H01L21/265
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324 , H01L29/66825 , H01L29/7883
摘要： A floating gate type semiconductor memory and method of manufacture are described including an erasing gate electrode in which a tunneling region can be formed easily and high reliability can be kept. An active region isolated by element isolation insulating films is formed on a semiconductor substrate. A gate insulating film and a floating gate electrode are sequentially formed on the active region. A control gate electrode is formed above the floating gate electrode with a silicon oxide film disposed therebetween. A tunneling insulating firm is formed only on the side wall of the floating gate electrode. Then, an erasing gate electrode is formed so as to cover the tunneling insulating film.
摘要翻译：描述了浮栅型半导体存储器及其制造方法，其特征在于包括能够容易地形成隧道区域的擦除栅极电极，并且可以保持高的可靠性。在半导体衬底上形成由元件隔离绝缘膜隔离的有源区。在有源区上依次形成栅极绝缘膜和浮栅电极。在浮置栅电极的上方形成有控制栅电极，其间配置有氧化硅膜。仅在浮栅电极的侧壁上形成隧道绝缘固体。然后，形成擦除栅电极以覆盖隧道绝缘膜。

7. 发明申请

US20180026264A1 BATTERY NEGATIVE ELECTRODE, BATTERY, AND MANUFACTURING METHOD OF BATTERY NEGATIVE ELECTRODE 审中-公开
公开(公告)号：US20180026264A1
公开(公告)日：2018-01-25
申请号：US15459871
申请日：2017-03-15
申请人： Tomohiro UENO , Kazuya KUBO , Hiroshi KAWANO , Toshio TAKAHASHI , EXERGY POWER SYSTEMS, INC.
发明人： Tomohiro UENO , Kazuya KUBO , Hiroshi KAWANO , Toshio TAKAHASHI , Kaduo TSUTSUMI
IPC分类号： H01M4/38 , H01M10/34 , C22F1/10 , H01M4/04 , C22C19/03 , B22F9/04 , H01M4/52 , H01M10/26
CPC分类号： H01M4/383 , B22F9/04 , B22F2301/15 , B22F2304/10 , B22F2998/10 , C22C19/03 , C22F1/10 , H01M4/0404 , H01M4/52 , H01M10/26 , H01M10/345 , H01M2004/021 , H01M2220/10 , H01M2300/0014
摘要： A battery negative electrode includes a hydrogen storage alloy as a negative electrode active material, wherein the hydrogen storage alloy has a mean volume diameter within a range from 4 μm to 12 μm, and is disposed to be capable of being in contact with hydrogen in a hydrogen containing part in which hydrogen is contained.

8. 发明申请

US20120003771A1 Method for Producing Thermoelectric Module 审中-公开
标题翻译：生产热电模块的方法
公开(公告)号：US20120003771A1
公开(公告)日：2012-01-05
申请号：US13256217
申请日：2010-03-01
申请人： Naoki Uchiyama , Kazuya Kubo , Masashi Mikami , Keizo Kobayashi , Toshiyuki Nishio
发明人： Naoki Uchiyama , Kazuya Kubo , Masashi Mikami , Keizo Kobayashi , Toshiyuki Nishio
IPC分类号： H01L35/34
CPC分类号： H01L35/08 , H01L35/34
摘要： A method for producing a thermoelectric module comprises steps of positioning electrodes (4) on a pair of current-supplying/pressing members (2) arranged to face each other, at their surfaces facing each other; arranging a plurality of thermoelectric elements (3) to be interposed between the electrodes (4); and bonding the electrodes (4) and the thermoelectric elements (3) by supplying an electric current to pass through the electrodes (4) and the thermoelectric elements (3) while pressing the electrodes (4) and the thermoelectric elements (3) by means of the current-supplying/pressing members (2), wherein the method further comprises a step of forming an intermediate layer (5) containing an electroconductive metal powder and having elasticity, between each of the electrodes (4) and the thermoelectric element (3) to be bonded thereto.
摘要翻译：一种制造热电模块的方法包括以下步骤：将电极（4）定位在彼此面对的彼此面对的一对电流供应/按压部件（2）上; 将多个热电元件（3）布置在所述电极（4）之间; 并且通过在通过电极（4）和热电元件（3）的同时按照电极（4）和热电元件（3）供给电流来通过电极（4）和热电元件（3）来接合电极（4）和热电元件（3）的电流供给/加压构件（2），其中该方法还包括在每个电极（4）和热电元件（3）之间形成包含导电金属粉末并具有弹性的中间层（5）的步骤）。

9. 发明授权

US06915488B2 Operation instruction system and computer readable storage medium to be used for the same 有权
标题翻译：操作指导系统和计算机可读存储介质用于此
公开(公告)号：US06915488B2
公开(公告)日：2005-07-05
申请号：US09867022
申请日：2001-05-29
申请人： Takahiro Omori , Kazuya Kubo , Kensuke Yoshitomi
发明人： Takahiro Omori , Kazuya Kubo , Kensuke Yoshitomi
IPC分类号： A63F13/00 , G06F3/048 , G10G1/00 , G10H1/00 , G06F3/00 , G06F9/00 , G06F17/00 , G09B15/08 , G09G13/00
CPC分类号： G10H1/0008 , G10H2220/041 , G10H2220/141
摘要： A display device system for driving a display having one of a plurality of predetermined sizes provides a scalable instruction picture to instruct an operator in operation of input devices. The system includes a device for accepting an operator input selecting a scaling factor to adjust the size of the instruction picture such that indicators in the instruction picture are arranged at spacings substantially equal to spacing of the input devices. In an embodiment, the size of the instruction picture is only adjusted in a width wise horizontal direction. Furthermore, scaling indicators corresponding to a plurality of predetermined display sizes are optionally provided to permit the user to select a scaling factor corresponding to the display.
摘要翻译：用于驱动具有多个预定尺寸之一的显示器的显示装置系统提供可伸缩指令画面，以指示操作者操作输入装置。该系统包括用于接受操作员输入的设备，其选择缩放因子以调整指令图像的大小，使得指令图片中的指示符以基本上等于输入设备的间隔的间隔排列。在一个实施例中，指令图片的大小仅在宽度方向上被调整。此外，可选地提供对应于多个预定显示尺寸的缩放指示符，以允许用户选择与显示相对应的缩放因子。

10. 发明授权

US5227887A Two-dimensional image sensing device for having a storage gate for plural photo detectors 失效
标题翻译：用于普通摄影机的存储门的二维图像感测装置
公开(公告)号：US5227887A
公开(公告)日：1993-07-13
申请号：US811366
申请日：1991-12-20
申请人： Masaji Dohi , Kenji Awamoto , Kazuya Kubo , Yuichiro Ito
发明人： Masaji Dohi , Kenji Awamoto , Kazuya Kubo , Yuichiro Ito
IPC分类号： H01L27/146 , H04N5/33 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/374
CPC分类号： H04N3/1512 , H01L27/14643 , H04N3/1593
摘要： An image sensing device uses photodiodes arranged in a matrix. Each photodiode is connected to one of p serially-coupled input gate and transfer gate combinations, were p is an integer greater than or equal to 2. Channel terminals of the p transfer gates are commonly-coupled to a serially-coupled storage gate and output switch combination. The serially-coupled storage gate and output switch combination and its associated p input gate and transfer gate combinations can be repeatedly provided in rows and columns, and addressed so that pixels determined by the photodiodes can be serially output from the image sensing device. Among other advantages, by using serially-coupled input gate and transfer gate combinations, the area provided for a storage gate can be increased so that the sensitivity, dynamic range and/or signal-to-noise ratio is increased relative to conventional devices.

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