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1. 发明授权

US5560241A Synthetic single crystal diamond for wire drawing dies 失效
标题翻译：合成单晶金刚石拉丝模具
公开(公告)号：US5560241A
公开(公告)日：1996-10-01
申请号：US484258
申请日：1995-06-07
申请人： Shuichi Satoh , Kazuwo Tsuji , Akito Yoshida , Nobuo Urakawa
发明人： Shuichi Satoh , Kazuwo Tsuji , Akito Yoshida , Nobuo Urakawa
IPC分类号： B21C3/02 , B28D5/00 , C30B33/00 , H01L23/373
CPC分类号： B21C3/025 , B28D5/0011 , C30B29/04 , C30B33/00 , H01L23/3732 , H01L2924/0002
摘要： A synthetic single crystal diamond for wire drawing die; the process of manufacturing it and a wire drawing die to utilize it are disclosed. At least one plane of the diamond for wire drawing die is a cleavage plane of (111) faces, and the drawing hole of wire drawing die lies vertical to the cleavage plane. The diamond for the wire drawing die is produced by providing a synthetic single crystal having 20-400 ppm nitrogen of Ib type diamond. A groove is made on the diamond surface parallel to (111) faces employing energy beams such as a laser beam, an ion beam and an electron beam. A wedge is struck into the groove to cleave the diamond, and a plate is obtained. Furthermore, the plate is divided into polyhedrons, employing either an energy beam or a blade. The cleavage plane of the polyhedron is almost parallel to the (111) faces of crystal, therefore the cleavage plane is used as the standard plane to build the drawing hole.
摘要翻译：用于拉丝模的合成单晶金刚石; 公开了其制造过程和使用它的拉丝模具。用于拉丝模的金刚石的至少一个平面是（111）面的解理面，拉丝模的拉丝孔垂直于解理面。用于拉丝模具的金刚石是通过提供具有20-400ppm的Ib型金刚石氮的合成单晶生产的。在使用诸如激光束，离子束和电子束的能量束的平行于（111）面的金刚石表面上形成凹槽。将楔形物撞入槽中以切割金刚石，并获得板。此外，板被分为多面体，使用能量束或叶片。多面体的解理平面几乎平行于晶体的（111）面，因此使用解理面作为标准平面来构建绘图孔。

2. 发明授权

US5011790A Method of manufacturing cubic boron nitride p-n junction body 失效
标题翻译：制造立方氮化硼p-n结体的方法
公开(公告)号：US5011790A
公开(公告)日：1991-04-30
申请号：US317946
申请日：1989-03-02
申请人： Junji Degawa , Kazuwo Tsuji
发明人： Junji Degawa , Kazuwo Tsuji
IPC分类号： B01J3/06 , C30B29/38 , H01L29/20
CPC分类号： H01L29/20 , Y10S438/932
摘要： In a method of manufacturing a cubic boron nitride p-n junction body, cBN seed crystals (1) of a first conductivity type are made coexist with original BN (3) and a solvent (2) containing a doping material of a second conductivity type, to grow cBN of the second conductivity type from the seed crystals (1). The solvent (2) contains 0.1 to 5 percent by weight of the doping material. The seed crystals (1) are disposed one by one in a plurality of blocks of the solvent (2), which blocks are separated from each other, to be in contact with nothing but the solvent (2). Due to such disposal, no spontaneous nucleation is caused in portions other than the seed crystals (1). A large-grained cBN p-n junction body is obtained as the result.

3. 发明授权

US6007916A Synthetic single crystal diamond for wiring drawing dies and process for producing the same 失效
标题翻译：用于接线拉丝模的合成单晶金刚石及其制造方法
公开(公告)号：US6007916A
公开(公告)日：1999-12-28
申请号：US247601
申请日：1994-05-23
申请人： Shuichi Satoh , Kazuwo Tsuji , Akito Yoshida , Nobuo Urakawa
发明人： Shuichi Satoh , Kazuwo Tsuji , Akito Yoshida , Nobuo Urakawa
IPC分类号： B21C3/02 , B28D5/00 , C30B33/00 , C01B31/06
CPC分类号： B21C3/025 , B28D5/0011 , C30B29/04 , C30B33/00 , H01L2924/0002 , Y10T428/30
摘要： A synthetic single crystal diamond for wire drawing die; the process of manufacturing it and a wire drawing die to utilize it are disclosed. At least one plane of the diamond for wire drawing die is a cleavage plane of (111) faces, and the drawing hole of wire drawing die lies vertical to the cleavage plane.The diamond for the wire drawing die is produced by providing a synthetic single crystal having 20-400 ppm nitrogen of Ib type diamond. A groove is made on the diamond surface parallel to (111) faces employing energy beams such as a laser beam, an ion beam and an electron beam. A wedge is struck into the groove to cleave the diamond, and a plate is obtained. Furthermore, the plate is divided into polyhedrons, employing either an energy beam or a blade. The cleavage plane of the polyhedron is almost parallel to the (111) faces of crystal, therefore the cleavage plane is used as the standard plane to build the drawing hole.
摘要翻译：用于拉丝模的合成单晶金刚石; 公开了其制造过程和使用它的拉丝模具。用于拉丝模的金刚石的至少一个平面是（111）面的解理面，拉丝模的拉丝孔垂直于解理面。用于拉丝模具的金刚石是通过提供具有20-400ppm的Ib型金刚石氮的合成单晶生产的。在使用诸如激光束，离子束和电子束的能量束的平行于（111）面的金刚石表面上形成凹槽。将楔形物撞入槽中以切割金刚石，并获得板。此外，板被分为多面体，使用能量束或叶片。多面体的解理平面几乎平行于晶体的（111）面，因此使用解理面作为标准平面来构建绘图孔。

4. 发明授权

US5240877A Process for manufacturing an ohmic electrode for n-type cubic boron nitride 失效
标题翻译：制造用于n型立方氮化硼的欧姆电极的方法
公开(公告)号：US5240877A
公开(公告)日：1993-08-31
申请号：US974121
申请日：1992-11-10
申请人： Katsuhito Yoshida , Kazuwo Tsuji
发明人： Katsuhito Yoshida , Kazuwo Tsuji
IPC分类号： H01L21/285 , H01L29/45
CPC分类号： H01L29/452 , H01L21/28575
摘要： An ohmic electrode for n-type cubic boron nitride is disclosed. The electrode is made of two thin films; and the first is at least one alloy material selected from a group consisting of Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy, and the second is at least one metallic material selected from a group consisting of Ni, Cr, Mo and Pt.A process for producing an ohmic electrode for n-type cBN is disclosed. The process is comprised of the following steps: providing a thin film of at least one alloy selected from Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy, the weight ratio of Si and Ge being from 0.1 to 35% by weight, on n-type cBN; providing a thin film of at least one metal selected from Ni, Cr, Mo and Pt on the thin alloy film; and subjecting the type cBN having the films thus provided to a heat-treatment process in an inert gas or in a vacuum at a temperature ranging from 350.degree. C. to 600.degree. C.
摘要翻译：公开了一种用于n型立方氮化硼的欧姆电极。电极由两片薄膜制成; 第一种是选自Au-Si合金，Au-Ge合金和Au-Si-Ge合金中的至少一种合金材料，第二种是选自Ni，Cr ，Mo和Pt。公开了一种用于制造用于n型cBN的欧姆电极的方法。该方法包括以下步骤：提供选自Au-Si合金，Au-Ge合金和Au-Si-Ge合金的至少一种合金的薄膜，Si和Ge的重量比为0.1-35％在n型cBN上; 在薄合金膜上提供选自Ni，Cr，Mo和Pt中的至少一种金属的薄膜; 并将具有这样提供的膜的类型cBN在惰性气体或真空中在350℃至600℃的温度下进行热处理。

5. 发明授权

US4985226A Hole-burning material and production thereof 失效
标题翻译：烧孔材料及其制作
公开(公告)号：US4985226A
公开(公告)日：1991-01-15
申请号：US366655
申请日：1989-06-15
申请人： Shuichi Satoh , Kazuwo Tsuji , Takeru Nakashima , Shuji Yazu , Yosio Nisida , Kiyofumi Muro , Yuzo Demizu , Masuo Nakagawa , Moritami Okada
发明人： Shuichi Satoh , Kazuwo Tsuji , Takeru Nakashima , Shuji Yazu , Yosio Nisida , Kiyofumi Muro , Yuzo Demizu , Masuo Nakagawa , Moritami Okada
IPC分类号： C30B33/00 , G11B7/0045 , G11B7/0055
CPC分类号： G11B7/0055 , C30B29/04 , C30B33/00 , G11B7/00453
摘要： A hole-burning material which comprises at least one hole which is formed on a zero-phonone line and semi-permanently lasts without suffering from any change in the temperature range from 2 to 120 K. and which can be erased by irradiation of excited light having an energy larger than the zero-phonone line, in which the burnt holes have long life and deep depth and any single holes can be erased.

6. 发明授权

US4950625A Diamond laser crystal and method manufacturing the same 失效
标题翻译：钻石激光晶体和方法制造相同
公开(公告)号：US4950625A
公开(公告)日：1990-08-21
申请号：US364693
申请日：1989-06-08
申请人： Takeru Nakashima , Shuichi Satoh , Kazuwo Tsuji
发明人： Takeru Nakashima , Shuichi Satoh , Kazuwo Tsuji
IPC分类号： C30B33/04 , B01J3/06 , C30B29/04 , C30B33/00 , H01S3/16
CPC分类号： H01S3/1681 , B01J3/062 , C30B29/04 , C30B33/00 , B01J2203/062 , B01J2203/0655 , B01J2203/069
摘要： A method of manufacturing a diamond laser crystal having an excellent laser efficiency is performed by first, preparing a synthetic type Ib diamond containing at least 60 volume percent of a (111) plane growth sector (43) is prepared. This synthetic diamond is then thermally treated under high temperature/high pressure, so that type Ib nitrogen contained in the synthetic diamond is converted to type IaA nitrogen. Thereafter an electron beam is applied to the synthetic diamond in order to generate vacancies in the synthetic diamond. Finally annealing is performed on the synthetic diamond to form H3 centers by coupling the type IaA nitrogen atoms contained in the synthetic diamond, with the vacancies. According to this method, the H3 centers can be formed in the synthetic type Ib diamond at high concentration, while formation of NV centers which become an obstacle to laser action, can be suppressed.

7. 发明授权

US6129900A Process for the synthesis of diamond 失效
标题翻译：金刚石合成工艺
公开(公告)号：US6129900A
公开(公告)日：2000-10-10
申请号：US307493
申请日：1994-09-16
申请人： Shuichi Satoh , Hitoshi Sumiya , Kazuwo Tsuji , Yasushi Gouda
发明人： Shuichi Satoh , Hitoshi Sumiya , Kazuwo Tsuji , Yasushi Gouda
IPC分类号： B01J3/06
CPC分类号： B01J3/062 , B01J2203/061 , B01J2203/0655 , B01J2203/067 , B01J2203/068
摘要： A colorless and transparent, substantially inclusion-free diamond crystal which can be applied to decorative uses and optical parts is synthesized by a process using a temperature gradient method in an ultra-high pressure apparatus. This process comprises using, as a solvent for the growth of the crystal, at least one metal selected from the group consisting of Fe, Co, Ni, Mn and Cr (at least two metals in the case of containing Fe) and as a nitrogen getter for the removal of nitrogen in the solvent, at least one metal selected from the group consisting of Al, Ti, Zr, Hf, V, Nb and Ta in a proportion of 0.5 to 7% by weight (at most 2% by weight when using only Al) to the solvent metal.
摘要翻译： PCT No.PCT / JP92 / 00149 Sec。 371日期：1992年10月14日 102（e）日期1992年10月14日PCT提交1992年2月14日PCT公布。公开号WO92 / 14542 日期1992年9月3日可以应用于装饰用途和光学部件的无色透明的基本上不含夹杂的金刚石晶体通过在超高压装置中使用温度梯度法的方法合成。该方法包括使用选自Fe，Co，Ni，Mn和Cr中的至少一种金属作为晶体生长的溶剂（在含有Fe的情况下至少有两种金属）和作为氮吸附剂用于除去溶剂中的氮，至少一种选自Al，Ti，Zr，Hf，V，Nb和Ta的金属，其含量为0.5〜7重量％（最多2重量％当仅使用Al时）溶剂金属。

8. 发明授权

US5328548A Method of synthesizing single diamond crystals of high thermal conductivity 失效
标题翻译：合成具有高导热性的单晶金刚石晶体的方法
公开(公告)号：US5328548A
公开(公告)日：1994-07-12
申请号：US995935
申请日：1992-12-23
申请人： Kazuwo Tsuji , Takeru Nakashima
发明人： Kazuwo Tsuji , Takeru Nakashima
IPC分类号： B01J3/06 , C30B29/04
CPC分类号： B01J3/062 , B01J2203/061 , B01J2203/0655 , B01J2203/068
摘要： A method of synthesizing single diamond crystals using a carbon source containing at least 99.9 atomic % carbon-12. This is accomplished by graphitizing carbon-12 to form a highly crystalline material which can be used as a carbon source in an ultra high pressure creating apparatus to produce single diamond crystals by means of a temperature difference process.
摘要翻译：使用含有至少99.9原子％碳-12的碳源合成单晶金刚石晶体的方法。这是通过将碳12石墨化以形成高结晶性材料来实现的，该材料可以在超高压生成装置中用作碳源，通过温度差工艺制造单晶金刚石晶体。

9. 发明授权

US5194070A Process for production of diamond abrasive grains 失效
标题翻译：生产钻石磨粒的方法
公开(公告)号：US5194070A
公开(公告)日：1993-03-16
申请号：US915614
申请日：1992-07-21
申请人： Hitoshi Sumiya , Kazuwo Tsuji
发明人： Hitoshi Sumiya , Kazuwo Tsuji
IPC分类号： B01J3/06 , C01B31/06 , C09C1/68 , C30B29/04
CPC分类号： B01J3/062 , B01J2203/061 , B01J2203/062 , B01J2203/0655 , B01J2203/068
摘要： Diamond abrasive grains are produced by a process which comprises steps of: regularly arranging a plurality of diamond crystal seeds on a first metal solvent plate, stacking a second solvent metal plate on the first solvent metal plate so that the diamond crystal seeds are sandwiched by the first solvent metal plate and the second solvent metal plate, and stacking a graphite raw plate on the second solvent metal plate to construct a production system for the diamond abrasive grains, heating the system or heating the system with pressurizing to a temperature above a solvent metal-graphite eutectic point through a temperature and pressure condition in which diamond is thermodynamically unstable to establish a temperature and pressure condition in which diamond is thermodynamically unstable, and heating the system or heating the system with pressurizing to establish a temperature and pressure condition in which diamond is thermodynamically stable and maintaining said condition.

10. 发明授权

US4959201A Green diamond and method of producing the same 失效
标题翻译：绿色钻石及其制作方法
公开(公告)号：US4959201A
公开(公告)日：1990-09-25
申请号：US292754
申请日：1988-12-30
申请人： Shuichi Satoh , Kazuwo Tsuji
发明人： Shuichi Satoh , Kazuwo Tsuji
IPC分类号： C01B31/06 , B01J19/08 , C30B29/04 , C30B31/20 , C30B33/00
CPC分类号： B01J19/085 , C30B29/04 , C30B33/00
摘要： A green diamond has a nitrogen content in its crystals within the range of 5.times.10.sup.16 to 3.times.10.sup.19 atoms/cm.sup.3, an absorption coefficient of H2 centers at a wavelength of 800 nm within the range of 0.3 to 6 cm.sup.-1, an absorption coefficient of the Ib type nitrogen at a wavelength of 500 nm within the range of 0.05 to 1.5 cm.sup.-1, and absorption coefficients of H3 centers, H4 centers, N-V centers and GR1 centers in the visible region of not more than 0.2 cm.sup.-1. Such green diamonds are produced by preparing a clear-yellow Ib type diamond having a nitrogen content in crystals within the range of 5.times.10.sup.16 to 3.times.10.sup.19 atoms/cm.sup.3, irradiating this diamond with an electron beam having not less than 1.times.10.sup.18 electrons/cm.sup.2 at an accelerating voltage of 2 to 4 MeV, and subjecting the diamond to a heat treatment at a temperature of 1500.degree. C.-1800.degree. C. in a vacuum of not more than 10.sup.-3 torr.

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