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    • 1. 发明授权
    • Coated particles for synthesizing diamond and process for production of
diamond abrasive for sawing
    • 用于合成金刚石的涂层颗粒和用于锯切的金刚石磨料的生产工艺
    • US5980982A
    • 1999-11-09
    • US629516
    • 1996-04-09
    • Junji DegawaKazuwo TsujiAkifumi FujiokaYasushi Goda
    • Junji DegawaKazuwo TsujiAkifumi FujiokaYasushi Goda
    • B01J2/00B01J3/06C30B29/04
    • B01J3/062B01J2203/061B01J2203/062B01J2203/0655B01J2203/068
    • A coated particle for synthesizing diamond includes: a single crystal of a fine diamond particle coated with at least one layer which contains at least one kind of solvent metal powder for synthesizing diamond and/or at least one kind of solvent metal powder with organic bonding material. Diamond abrasive particles for sawing are produced by a process which includes the steps of: coating fine diamond particles with at least one layer which contains at least one kind of solvent metal powder for synthesizing diamond and/or at least one kind of solvent metal powder with organic bonding material, filling a molding with the coated fine diamond particles, compacting, arranging a compact in a synthesizing vessel, heating the compact to a temperature above a solvent metal-graphite melting point under a pressure condition in which diamond is thermodynamically stable, and recovering the diamond abrasive particles.
    • 用于合成金刚石的涂覆颗粒包括:涂覆有至少一层的细金刚石颗粒的单晶,其包含至少一种用于合成金刚石的溶剂金属粉末和/或至少一种溶剂金属粉末与有机粘合材料 。 用于锯切的金刚石磨料颗粒通过包括以下步骤的方法生产:包括至少一层的精细金刚石颗粒,所述至少一层包含至少一种用于合成金刚石和/或至少一种溶剂金属粉末的溶剂金属粉末, 有机粘合材料,用涂覆的金刚石颗粒填充模塑件,压实,在合成容器中设置压块,在金刚石热力学稳定的压力条件下将压块加热至高于溶剂金属 - 石墨熔点的温度,以及 回收金刚石磨料颗粒。
    • 4. 发明授权
    • Method of synthesizing cubic system boron nitride
    • 合成立方氮化硼的方法
    • US4699687A
    • 1987-10-13
    • US909263
    • 1986-09-19
    • Shuji YazuHitoshi SumiyaJunji Degawa
    • Shuji YazuHitoshi SumiyaJunji Degawa
    • B01J3/06C30B9/00C30B29/38
    • C30B9/00B01J3/062C30B29/403B01J2203/061B01J2203/0645B01J2203/0655B01J2203/066B01J2203/068Y10S117/90Y10T117/1096
    • Cubic system boron nitride crystals are synthesized by using a synthesizing vessel separated into a plurality of synthesizing chambers by one or more partition layers. After preparing the synthesizing vessel it is heated under extra-high pressure to achieve a required temperature gradient from chamber to chamber. A plurality of solvents having different eutectic temperatures with respect to boron nitride (BN) sources are placed in the chambers according to the temperature gradient. The BN sources are placed in contact with solvent portions heated to relatively high temperatures. At least one seed crystal is placed in each solvent portion heated to relatively low temperatures. At least one cubic system boron nitride crystal is grown in each of the solvents in the chambers by the above heating of the synthesizing vessel under conditions of ultra-high pressure and temperatures assuring the required temperature gradient.
    • 通过使用通过一个或多个分隔层分离成多个合成室的合成容器来合成立方体系的氮化硼晶体。 在制备合成容器之后,在超高压下加热以达到从室到室所需的温度梯度。 根据温度梯度,将多个相对于氮化硼(BN)源的共晶温度的溶剂放置在室中。 BN源与被加热到较高温度的溶剂部分接触。 在加热到较低温度的每个溶剂部分中放置至少一种晶种。 在超高压和温度条件下,通过合成容器的上述加热,在室内的每种溶剂中生长至少一种立方晶系氮化硼晶体,以确保所需的温度梯度。