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    • 5. 发明授权
    • Electrophotographic photoreceptor and device
    • 电子照相感光体和装置
    • US07166398B2
    • 2007-01-23
    • US10798055
    • 2004-03-11
    • Akihiko ItamiTomoo SakimuraKazuhisa ShidaMasao AsanoHiroshi Yamazaki
    • Akihiko ItamiTomoo SakimuraKazuhisa ShidaMasao AsanoHiroshi Yamazaki
    • G03G5/14
    • G03G5/10G03G5/142G03G5/144
    • An electrophotographic photoreceptor having an interlayer and a photosensitive layer on an electroconductive substrate, wherein the interlayer comprises any one of 1) an N-type semiconductive particle containing at least one of transition metals having an atomic number of 21 to 30, 39, 41 to 48 and 57 to 80, the total amount of the transition metals having an atomic number of 21 to 30, 39, 41 to 48 and 57 to 80 being from 100 ppm to 2.0% by mass, or 2) a metal oxide particle containing a silicon atom in a bond energy spectrum by the X-ray photoelectron spectroscopy at a ratio represented by the following Formula (1): Formula (1) 0.02≦Si/M≦0.55 Si: a peak intensity of a silicon atom among the bond energy spectrum, and M: a peak intensity of a metal atom among the bond energy spectrum.
    • 一种在导电性基体上具有中间层和感光层的电子照相感光体,其中,所述中间层包含以下中的任一种:1)含有至少一种过渡金属的N型半导体颗粒,所述过渡金属的原子序数为21〜30,39,41〜 48和57〜80,原子序数为21〜30,39,41〜48,57〜80的过渡金属的总量为100〜2.0质量%,或2)含有 通过X射线光电子能谱以下式(1)表示的比例的键能谱中的硅原子:式(1)0.02 <= Si / M <= 0.55 Si:硅原子的峰强度 键能谱,M:键能谱中金属原子的峰强度。