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1. 发明申请

US20070221581A1 Ultrapure Water Production Plant 审中-公开
标题翻译：超纯水生产厂
公开(公告)号：US20070221581A1
公开(公告)日：2007-09-27
申请号：US10599445
申请日：2005-03-30
申请人： Katsunobu Kitami , Ikunori Yokoi , Masayoshi Oinuma
发明人： Katsunobu Kitami , Ikunori Yokoi , Masayoshi Oinuma
IPC分类号： C02F1/32
CPC分类号： B01D61/145 , B01D19/0031 , C02F1/20 , C02F1/32 , C02F1/725 , C02F9/00 , C02F2001/422 , C02F2001/425 , C02F2001/427 , C02F2103/04
摘要： An ultrapure water production plant that can produce ultrapure water with an extremely low rate of impurity concentration such as dissolved oxygen concentration, etc., is provided. A primary pure water is introduced and a catalyst mixed tower 4, wherein catalyst supports strong base anion exchange resins are mixed and filled, is located in the downstream of the ultraviolet oxidation equipment of the ultrapure water production plant 1 producing ultrapure water. Further in the latter part of the catalyst mixed tower 4, membrane degasser 5 and demineralization equipment 6 are located. Hydrogen peroxide generated in the ultraviolet oxidation equipment 3 etc., is decomposed by contacting the catalyst supports filled in the catalyst mixed tower 4 and thus decomposition of the strong base anion exchange resins is inhibited. Therefore, dissolved materials from the catalyst mixed tower 4 are reduced so the quality of the water can be increased and at the same time, the load of the demineralization equipment 6 provided on the downstream can be lowered.
摘要翻译：提供了一种超纯水生产设备，能够生产出极低的杂质浓度比例如溶解氧浓度等的超纯水。引入初级纯水，并且催化剂混合塔4，其中催化剂支持强碱阴离子交换树脂被混合和填充，位于超纯水生产设备1的紫外线氧化设备的下游，产生超纯水。此外，在催化剂混合塔4的后半部分中，设置有膜脱气装置5和脱盐装置6。在紫外线氧化设备3等中产生的过氧化氢通过使填充在催化剂混合塔4中的催化剂载体接触而分解，从而抑制强碱性阴离子交换树脂的分解。因此，来自催化剂混合塔4的溶解材料减少，因此可以提高水的质量，同时可以降低设在下游的脱盐装置6的负荷。

2. 发明授权

US09136104B2 Method for cleaning silicon wafer and apparatus for cleaning silicon wafer 有权
标题翻译：硅晶片清洗方法及硅晶片清洗装置
公开(公告)号：US09136104B2
公开(公告)日：2015-09-15
申请号：US13884350
申请日：2011-11-11
申请人： Takaaki Chuuman , Takahiro Kawakatsu , Katsunobu Kitami , Hiroshi Morita
发明人： Takaaki Chuuman , Takahiro Kawakatsu , Katsunobu Kitami , Hiroshi Morita
IPC分类号： B08B7/04 , H01L21/02 , B08B3/04 , B08B3/00 , B08B3/02 , H01L21/67
CPC分类号： H01L21/02052 , B08B3/00 , B08B3/02 , B08B3/04 , H01L21/67057
摘要： A silicon wafer after being cleaned by using a cleaning liquid is rinsed by using carbonic water. According to such a silicon wafer cleaning method, generation of static due to a rinsing treatment is not caused, so that an electrostatic breakdown is not caused, adhesion of dirt to a cleaned silicon wafer surface due to the static is not caused, adhesion of metal impurities can be prevented in the rinsing treatment of the silicon wafer and, while giving consideration to the cost, furthermore, a rinsing treatment using a clean rinsing liquid free from causing any residue can be performed.
摘要翻译：通过使用清洗液清洗后的硅晶片通过使用碳酸水进行冲洗。根据这样的硅晶片清洗方法，不会产生由于进行漂洗处理而产生的静电，所以不会产生静电击穿，不会引起由静电引起的污物对清洗过的硅晶片表面的附着，金属的附着可以防止在硅晶片的漂洗处理中产生杂质，并且在考虑成本的同时，可以进行使用不产生任何残留物的清洁冲洗液的漂洗处理。

3. 发明申请

US20130291891A1 METHOD FOR CLEANING SILICON WAFER AND APPARATUS FOR CLEANING SILICON WAFER 有权
标题翻译：用于清洁硅波的方法和用于清洁硅波的装置
公开(公告)号：US20130291891A1
公开(公告)日：2013-11-07
申请号：US13884350
申请日：2011-11-11
申请人： Takaaki Chuuman , Takahiro Kawakatsu , Katsunobu Kitami , Hiroshi Morita
发明人： Takaaki Chuuman , Takahiro Kawakatsu , Katsunobu Kitami , Hiroshi Morita
IPC分类号： H01L21/02
CPC分类号： H01L21/02052 , B08B3/00 , B08B3/02 , B08B3/04 , H01L21/67057
摘要： A silicon wafer after being cleaned by using a cleaning liquid is rinsed by using carbonic water. According to such a silicon wafer cleaning method, generation of static due to a rinsing treatment is not caused, so that an electrostatic breakdown is not caused, adhesion of dirt to a cleaned silicon wafer surface due to the static is not caused, adhesion of metal impurities can be prevented in the rinsing treatment of the silicon wafer and, while giving consideration to the cost, furthermore, a rinsing treatment using a clean rinsing liquid free from causing any residue can be performed.
摘要翻译：通过使用清洗液清洗后的硅晶片通过使用碳酸水进行冲洗。根据这样的硅晶片清洗方法，不会产生由于进行漂洗处理而产生的静电，所以不会产生静电击穿，不会引起由静电引起的污物对清洗过的硅晶片表面的附着，金属的附着可以防止在硅晶片的漂洗处理中产生杂质，并且在考虑成本的同时，可以进行使用不产生任何残留物的清洁冲洗液的漂洗处理。

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