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1. 发明授权

US4521794A Electrode and semiconductor device provided with the electrode 失效
标题翻译：设置有电极的电极和半导体器件
公开(公告)号：US4521794A
公开(公告)日：1985-06-04
申请号：US626487
申请日：1984-07-03
申请人： Katsumi Murase , Yoshihiko Mizushima
发明人： Katsumi Murase , Yoshihiko Mizushima
IPC分类号： H01L21/285 , H01L23/532 , H01L29/45 , H01L45/00
CPC分类号： H01L29/456 , H01L21/28525 , H01L23/53271 , H01L2924/0002
摘要： A semiconductor layer is formed on at least one portion of a silicon substrate. The layer is made of poly-crystalline or amorphous multicomponent containing silicon, at least one element of Group IV having an atomic radius larger than that of silicon, such as germanium or tin, and donor impurity or acceptor impurity.
摘要翻译：半导体层形成在硅衬底的至少一部分上。该层由含有硅的多晶或非晶多组分制成，第IV族的至少一种元素的原子半径大于硅的原子半径，例如锗或锡，以及施主杂质或受主杂质。

2. 发明授权

US06186764B1 Injection molding machine 失效
标题翻译：注塑机
公开(公告)号：US06186764B1
公开(公告)日：2001-02-13
申请号：US09208308
申请日：1998-12-11
申请人： Katsumi Murase , Taiki Watanabe , Shozo Honda
发明人： Katsumi Murase , Taiki Watanabe , Shozo Honda
IPC分类号： B29C4524
CPC分类号： B29C45/232
摘要： The injection molding machine comprises the closing mechanism 5 having the nozzle touch member 3 to close the tip opening 1a of the nozzle 1 and the electric heater 6 to regulate the temperature of the nozzle touch member 3. The closing member 5 is constituted in such a manner as the arm 13 is pivotally supported on the jacket cover 11 mounted on the nozzle 1, the cylinder 7 is mounted on mounting member 14 provided at the tip of the arm 13, and the nozzle touch member 3 is supported at the tip of the piston rod 7a. The electric heater 6 is arranged around the nozzle touch member 3. When the arm 13 is rotated from the retreated position R to the closed position C by the actuation of the rotor 8, the nozzle touch member 3 is faced to the tip opening 1a of the nozzle 1, and by extending the cylinder 7, the nozzle touch member 3 regulated to the temperature suitable for the resin material by the electric heater 6 closes the tip opening 1a from its front surface.
摘要翻译：注射成型机包括具有喷嘴接触部件3以关闭喷嘴1的前端开口1a和电加热器6的关闭机构5，以调节喷嘴接触部件3的温度。封闭部件5构成为当臂13枢转地支撑在安装在喷嘴1上的护罩盖11上时，气缸7安装在设置在臂13的尖端的安装构件14上，并且喷嘴接触构件3被支撑在活塞杆7a。电加热器6设置在喷嘴接触部件3周围。当通过转子8的动作使臂13从退避位置R旋转到闭合位置C时，喷嘴接触部件3面向喷嘴1，并且通过延伸气缸7，通过电加热器6调节到适合于树脂材料的温度的喷嘴接触构件3从其前表面封闭尖端开口1a。

3. 发明授权

US5512513A Method of fabricating semiconductor device with water protective film 失效
标题翻译：用水保护膜制造半导体器件的方法
公开(公告)号：US5512513A
公开(公告)日：1996-04-30
申请号：US296025
申请日：1994-08-25
申请人： Katsuyuki Machida , Katsumi Murase , Nobuhiro Shimoyama , Toshiaki Tsuchiya , Junichi Takahashi , Kazushige Minegishi , Yasuo Takahashi , Hideo Namatsu , Kazuo Imai
发明人： Katsuyuki Machida , Katsumi Murase , Nobuhiro Shimoyama , Toshiaki Tsuchiya , Junichi Takahashi , Kazushige Minegishi , Yasuo Takahashi , Hideo Namatsu , Kazuo Imai
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/768 , H01L23/532 , H01L21/44
CPC分类号： H01L21/02126 , H01L21/02129 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/3105 , H01L21/31608 , H01L21/76801 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L2924/0002
摘要： A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
摘要翻译：半导体器件包括由包含悬挂键的第一电介质膜和Si和氢的键合基团构成的层间膜和形成在第一介电膜上的第二电介质膜。

4. 发明授权

US4460417A Method of manufacturing insulating film and electric device utilizing the same 失效
标题翻译：制造绝缘膜的方法和利用该方法的电子装置
公开(公告)号：US4460417A
公开(公告)日：1984-07-17
申请号：US436035
申请日：1982-10-22
申请人： Katsumi Murase , Teruo Tamama , Yoshihito Amemiya , Yoshihiko Mizushima
发明人： Katsumi Murase , Teruo Tamama , Yoshihito Amemiya , Yoshihiko Mizushima
IPC分类号： H01L29/73 , H01L21/321 , H01L21/331 , H01L29/72 , H01L21/225 , H01L21/265
CPC分类号： H01L29/66272 , H01L21/32105 , H01L29/72
摘要： An insulating film is prepared by oxidizing an amorphous silicon layer containing boron or boron and germanium. The amorphous silicon layer is partially oxidized inwardly from the surface of the amorphous silicon layer to form the insulating film, while the unoxidized portion of the amorphous silicon layer is used as a conductive layer. The amorphous silicon layer may contain boron or boron and an element of Group IV, for example germanium. The insulating film is utilized to fabricate a bipolar transistor.
摘要翻译：通过氧化含有硼或硼和锗的非晶硅层来制备绝缘膜。非晶硅层从非晶硅层的表面向内部分地被氧化，形成绝缘膜，而将非晶硅层的未氧化部分用作导电层。非晶硅层可以含有硼或硼以及第IV族的元素，例如锗。绝缘膜用于制造双极晶体管。

5. 发明授权

US5811872A Semiconductor device and method of farbricating the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US5811872A
公开(公告)日：1998-09-22
申请号：US594947
申请日：1996-01-31
申请人： Katsuyuki Machida , Katsumi Murase , Nobuhiro Shimoyama , Toshiaki Tsuchiya , Junichi Takahashi , Kazushige Minegishi , Yasuo Takahashi , Hideo Namatsu , Kazuo Imai
发明人： Katsuyuki Machida , Katsumi Murase , Nobuhiro Shimoyama , Toshiaki Tsuchiya , Junichi Takahashi , Kazushige Minegishi , Yasuo Takahashi , Hideo Namatsu , Kazuo Imai
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/768 , H01L23/532 , H01L23/58
CPC分类号： H01L21/02126 , H01L21/02129 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/3105 , H01L21/31608 , H01L21/76801 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L2924/0002
摘要： A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
摘要翻译：半导体器件包括由包含悬挂键的第一电介质膜和Si和氢的键合基团构成的层间膜和形成在第一介电膜上的第二电介质膜。

6. 发明授权

US5376590A Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5376590A
公开(公告)日：1994-12-27
申请号：US5670
申请日：1993-01-19
申请人： Katsuyuki Machida , Katsumi Murase , Nobuhiro Shimoyama , Toshiaki Tsuchiya , Junichi Takahashi , Kazushige Minegishi , Yasuo Takahashi , Hideo Namatsu , Kazuo Imai
发明人： Katsuyuki Machida , Katsumi Murase , Nobuhiro Shimoyama , Toshiaki Tsuchiya , Junichi Takahashi , Kazushige Minegishi , Yasuo Takahashi , Hideo Namatsu , Kazuo Imai
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/768 , H01L23/532 , H01L21/02
CPC分类号： H01L21/02126 , H01L21/02129 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/3105 , H01L21/31608 , H01L21/76801 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L2924/0002
摘要： A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
摘要翻译：半导体器件包括由包含悬挂键的第一电介质膜和Si和氢的键合基团构成的层间膜和形成在第一介电膜上的第二电介质膜。

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