专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120083918A1 SEALED CONTAINER AND SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：密封容器和半导体制造设备
公开(公告)号：US20120083918A1
公开(公告)日：2012-04-05
申请号：US13247740
申请日：2011-09-28
申请人： Katsuhiro Yamazaki
发明人： Katsuhiro Yamazaki
IPC分类号： G06F19/00 , B65D85/86
CPC分类号： H01L21/67775 , H01L21/67389
摘要： A semiconductor manufacturing apparatus 1 includes a wafer 10, a FOUP 20 that is a sealed container retaining the wafer 10 therein, an etching apparatus 30 that is a semiconductor processing apparatus, and an EFEM 40 that carries the wafer in a sealed condition between the FOUP and the etching apparatus. The FOUP includes a front door 20a, a sensor unit 21b detecting at least one of a temperature, a humidity, and a gas concentration, and a transmitter 25 that transmits information detected by the sensor unit. A receiver 31 receives information from the transmitter, and supplies the information to a purging unit 43. The purging unit performs purging until the temperature, etc., in the FOUP satisfies a reference value set beforehand.
摘要翻译：半导体制造装置1包括晶片10，作为将晶片10保持在其中的密封容器的FOUP20，作为半导体处理装置的蚀刻装置30以及在FOUP之间以密封状态承载晶片的EFEM 40 和蚀刻装置。 FOUP包括前门20a，检测温度，湿度和气体浓度中的至少一个的传感器单元21b，以及发送由传感器单元检测到的信息的发送器25。接收器31从发送器接收信息，并将信息提供给清洗单元43.清洗单元进行清洗，直到FOUP中的温度等满足预先设定的参考值。

2. 发明授权

US08088296B2 Plasma processing device and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08088296B2
公开(公告)日：2012-01-03
申请号：US11574570
申请日：2005-05-19
申请人： Katsuhiro Yamazaki
发明人： Katsuhiro Yamazaki
IPC分类号： B44C1/22
CPC分类号： H01J37/32477
摘要： The present invention prevents drop in the function of a plasma processing device caused by reduction of a plasma generating chamber by reductive plasma that is generated from the introduced process gas, and extends the life of members which are in contact with reductive plasma, especially the plasma generating chamber member. The plasma processing device of this embodiment is a device for treating the surface of a processing subject S using radicals generated by exciting a process gas, wherein a plasma generating chamber member 6, having a internal plasma generating chamber 6a, is connected to a gas introduction tube 5 attached to the outside of the process chamber 1, and a gas regulator 7 is provided on the end of the plasma generating chamber member 6. The configuration is such that when the plasma generating chamber member 6 is reduced by the reductive plasma generated from the gas introduced from the gas regulator 7, a reoxidation gas will be introduced into the plasma generating chamber 6a in place of the reductive gas from the gas regulator 7.
摘要翻译：本发明可以防止等离子体处理装置的功能下降，这是由引入的处理气体产生的还原性等离子体等离子体产生室的还原造成的，延长与还原等离子体，特别是等离子体接触的部件的寿命产生室构件。本实施例的等离子体处理装置是通过激发处理气体而产生的自由基来处理加工对象S的表面的装置，其中具有内部等离子体产生室6a的等离子体产生室构件6连接到气体导入管5附接到处理室1的外部，并且气体调节器7设置在等离子体产生室构件6的端部上。这种构造使得当等离子体产生室构件6被由等离子体发生室构件6产生的还原等离子体从气体调节器7引入的气体，再氧化气体将被引入到等离子体发生室6a中，代替来自气体调节器7的还原性气体。

3. 发明申请

US20080132078A1 Ashing Method And Ashing Apparatus 审中-公开
标题翻译：灰化方法和灰化装置
公开(公告)号：US20080132078A1
公开(公告)日：2008-06-05
申请号：US11574571
申请日：2004-12-14
申请人： Katsuhiro Yamazaki
发明人： Katsuhiro Yamazaki
IPC分类号： H01L21/3065
CPC分类号： H01L21/31138 , G03F7/427
摘要： An ashing device and ashing method that can positively remove resist from a wafer while preventing degradation of the film material properties of exposed porous Low-K film on the wafer. The ashing device of the present invention introduces a gas to a dielectric plasma generating chamber 14, excites said gas to generate a plasma, and performs plasma processing using said gas plasma on a processing work S in use of a Low-K film. The ashing gas introduced from a gas regulator 20 is an inert gas to which H2 has been added. The configuration is formed so that plasma is generated from the gas blend, and the resist is removed by the hydrogen radicals generated.
摘要翻译：可以防止晶片上暴露的多孔Low-K膜的膜材料特性劣化的可从晶片上积极去除抗蚀剂的灰化装置和灰化方法。本发明的灰化装置将气体引入介质等离子体发生室14，激发所述气体以产生等离子体，并且在使用Low-K膜的处理工作S上使用所述气体等离子体进行等离子体处理。从气体调节器20引入的灰化气体是已经加入了H 2 H 2的惰性气体。形成这样的结构，使得从气体共混物产生等离子体，并且通过产生的氢自由基除去抗蚀剂。

4. 发明授权

US06752696B2 Rolling elements for rolling bearing, method of producing the same, and rolling bearing 有权
标题翻译：滚动轴承用滚动体，其制造方法以及滚动轴承
公开(公告)号：US06752696B2
公开(公告)日：2004-06-22
申请号：US10093373
申请日：2002-03-11
申请人： Takashi Murai , Katsuhiro Yamazaki , Haruki Tsutsui
发明人： Takashi Murai , Katsuhiro Yamazaki , Haruki Tsutsui
IPC分类号： B24B100
CPC分类号： F16C19/40 , F16C19/36 , F16C19/362 , F16C33/36 , F16C33/3706 , F16C33/4617 , F16C2300/02 , Y10T29/49694 , Y10T29/49712
摘要： A method of producing rolling elements for a rolling bearing comprises mixing to process rounded elements made of steel balls and spherical rolling elements having outer diameter portion portion becoming a rolling contact face. The rolling contact face has curvatures in an axial direction and a radial direction normal to the axial direction, and has at least one plane. The thus mixed elements are placed and processed in a space between two processing boards opposing each other via the determined space. Thereby, the surfaces of the rounded balls and the rolling elements are processed to be rounded.
摘要翻译：一种用于滚动轴承的滚动元件的制造方法包括混合以处理由钢珠制成的圆形元件和具有变成滚动接触面的外径部分的球形滚动元件。滚动接触面在与轴向垂直的轴向和径向的曲率上具有至少一个平面。这样混合的元件通过确定的空间被放置和处理在两个处理板之间的空间中。由此，圆球和滚动体的表面被加工成圆形。

5. 发明申请

US20110143546A1 ASHING METHOD AND ASHING DEVICE 有权
标题翻译：抛光方法和抛光装置
公开(公告)号：US20110143546A1
公开(公告)日：2011-06-16
申请号：US13031538
申请日：2011-02-21
申请人： Katsuhiro Yamazaki
发明人： Katsuhiro Yamazaki
IPC分类号： H01L21/465
CPC分类号： H01L21/31138 , G03F7/427
摘要： An ashing device and ashing method that can positively remove resist from a wafer while preventing degradation of the film material properties of exposed porous Low-K film on the wafer. The ashing device of the present invention introduces a gas to a dielectric plasma generating chamber 14, excites said gas to generate a plasma, and performs plasma processing using said gas plasma on a processing work S in use of a Low-K film. The ashing gas introduced from a gas regulator 20 is an inert gas to which H2 has been added. The configuration is formed so that plasma is generated from the gas blend, and the resist is removed by the hydrogen radicals generated.
摘要翻译：可以防止晶片上暴露的多孔Low-K膜的膜材料特性劣化的可从晶片上积极去除抗蚀剂的灰化装置和灰化方法。本发明的灰化装置将气体引入介质等离子体发生室14，激发所述气体以产生等离子体，并且在使用Low-K膜的处理工作S上使用所述气体等离子体进行等离子体处理。从气体调节器20引入的灰化气体是已经加入了H 2的惰性气体。形成这样的结构，使得从气体共混物产生等离子体，并且通过产生的氢自由基除去抗蚀剂。

6. 发明授权

US4845327A Microwave oven having automatic bread making function 失效
标题翻译：微波炉具有自动面包功能
公开(公告)号：US4845327A
公开(公告)日：1989-07-04
申请号：US271261
申请日：1988-11-15
申请人： Koji Iwabuchi , Masaharu Tawada , Noriyuki Kanagawa , Mituhiro Aoyama , Katsuhiro Yamazaki , Kazuo Kaneko
发明人： Koji Iwabuchi , Masaharu Tawada , Noriyuki Kanagawa , Mituhiro Aoyama , Katsuhiro Yamazaki , Kazuo Kaneko
IPC分类号： H05B6/80
CPC分类号： H05B6/6411
摘要： Disclosed is a microwave heating apparatus which comprises a turntable for reducing the irregularity of heat with the rotation movement of a subject to be heated within a heat chamber, a bread casing used for automatically performing an entire process of kneading raw ingredients, fermentation, gas escape, baking and the like, a first driving shaft made of a metal pipe and provided to drive a kneading blade mounted within the bread casing, and a second driving shaft made of a microwave-permeable dielectric substance provided to drive the turntable, the second shaft being arranged to pierce a hollow portion of the first driving shaft. According to the aforementioned construction, the turntable and the kneading blade can be effectively driven by the respective optimum motors. A choke cavity and a disk shaped conductive plate prevent microwave energy from leaking out of the heat chamber along the respective driving shafts.
摘要翻译：本发明公开了一种微波加热装置，其特征在于，包括：转台，用于随着加热室内被加热物的旋转运动而减少热量不均匀;用于自动进行捏合原料的全过程的发酵，排气烘烤等，由金属管制成并设置成驱动安装在面包壳内的揉搓叶片的第一驱动轴和由设置成驱动转台的微波可渗透介质物质构成的第二驱动轴，第二轴被布置成刺穿第一驱动轴的中空部分。根据上述结构，可以通过各自的最佳电动机有效地驱动转盘和揉面刀。扼流腔和盘形导电板防止微波能量沿相应的驱动轴从热室泄漏出来。

7. 发明授权

US08524102B2 Ashing method and ashing device 有权
标题翻译：灰化方法和灰化装置
公开(公告)号：US08524102B2
公开(公告)日：2013-09-03
申请号：US13031538
申请日：2011-02-21
申请人： Katsuhiro Yamazaki
发明人： Katsuhiro Yamazaki
IPC分类号： B44C1/22
CPC分类号： H01L21/31138 , G03F7/427
摘要： An ashing device and ashing method that can positively remove resist from a wafer while preventing degradation of the film material properties of exposed porous Low-K film on the wafer. The ashing device of the present invention introduces a gas to a dielectric plasma generating chamber 14, excites said gas to generate a plasma, and performs plasma processing using said gas plasma on a processing work S in use of a Low-K film. The ashing gas introduced from a gas regulator 20 is an inert gas to which H2 has been added. The configuration is formed so that plasma is generated from the gas blend, and the resist is removed by the hydrogen radicals generated.
摘要翻译：可以防止晶片上暴露的多孔Low-K膜的膜材料特性劣化的可从晶片上积极去除抗蚀剂的灰化装置和灰化方法。本发明的灰化装置将气体引入介质等离子体发生室14，激发所述气体以产生等离子体，并且在使用Low-K膜的处理工作S上使用所述气体等离子体进行等离子体处理。从气体调节器20引入的灰化气体是已经加入了H 2的惰性气体。形成这样的结构，使得从气体共混物产生等离子体，并且通过产生的氢自由基除去抗蚀剂。

8. 发明申请

US20080283498A1 Plasma Processing Device and Plasma Processing Method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20080283498A1
公开(公告)日：2008-11-20
申请号：US11574570
申请日：2005-05-19
申请人： Katsuhiro Yamazaki
发明人： Katsuhiro Yamazaki
IPC分类号： H01L21/3065 , C23F1/02
CPC分类号： H01J37/32477
摘要： The present invention prevents drop in the function of a plasma processing device caused by reduction of a plasma generating chamber by reductive plasma that is generated from the introduced process gas, and extends the life of members which are in contact with reductive plasma, especially the plasma generating chamber member. The plasma processing device of this embodiment is a device for treating the surface of a processing subject S using radicals generated by exciting a process gas, wherein a plasma generating chamber member 6, having a internal plasma generating chamber 6a, is connected to a gas introduction tube 5 attached to the outside of the process chamber 1, and a gas regulator 7 is provided on the end of the plasma generating chamber member 6. The configuration is such that when the plasma generating chamber member 6 is reduced by the reductive plasma generated from the gas introduced from the gas regulator 7, a reoxidation gas will be introduced into the plasma generating chamber 6a in place of the reductive gas from the gas regulator 7.
摘要翻译：本发明可以防止等离子体处理装置的功能下降，这是由引入的处理气体产生的还原性等离子体等离子体发生室的还原造成的，延长与还原等离子体，尤其是等离子体接触的部件的寿命产生室构件。该实施例的等离子体处理装置是用于通过激发处理气体产生的自由基来处理加工对象S的表面的装置，其中具有内部等离子体产生室6a的等离子体产生室构件6连接到气体引入管5附接到处理室1的外部，气体调节器7设置在等离子体产生室构件6的端部。该结构使得当等离子体发生室构件6被从气体调节器7引入的气体产生的还原等离子体减少时，再氧化气体将被引入到等离子体发生室6a中，代替来自气体调节器7。

9. 发明授权

US07146734B2 Rolling elements for rolling bearing, method of producing the same, and rolling bearing 有权
公开(公告)号：US07146734B2
公开(公告)日：2006-12-12
申请号：US10733471
申请日：2003-12-12
申请人： Takashi Murai , Katsuhiro Yamazaki , Haruki Tsutsui
发明人： Takashi Murai , Katsuhiro Yamazaki , Haruki Tsutsui
IPC分类号： B21D53/10 , B21K1/02
CPC分类号： F16C19/40 , F16C19/36 , F16C19/362 , F16C33/36 , F16C33/3706 , F16C33/4617 , F16C2300/02 , Y10T29/49694 , Y10T29/49712
摘要： A method of producing rolling elements for a rolling bearing comprises mixing to process rounded elements made of steel balls and spherical rolling elements having outer diameter portion portion becoming a rolling contact face. The rolling contact face has curvatures in an axial direction and a radial direction normal to the axial direction, and has at least one plane. The thus mixed elements are placed and processed in a space between two processing boards opposing each other via the determined space. Thereby, the surfaces of the rounded balls and the rolling elements are processed to be rounded.

10. 发明授权

US4129774A Filling materials for heating elements 失效
标题翻译：加热元件填充材料
公开(公告)号：US4129774A
公开(公告)日：1978-12-12
申请号：US714179
申请日：1976-08-13
申请人： Tozaburo Inano , Katsuhiro Yamazaki , Minoru Otake
发明人： Tozaburo Inano , Katsuhiro Yamazaki , Minoru Otake
IPC分类号： H01B3/00 , H05B3/18 , H05B3/48
CPC分类号： H05B3/48 , H05B3/18
摘要： A heating element consisting of a metal pipe, an electric resistance conductor inserted into the metal pipe and a heat resistant insulating material filled between said metal pipe and said electric resistance conductor, characterized in that said heat resistant insulating material is one obtained by coating a first insulating material such as particulate fused magnesia with a second insulating material having a lower melting temperature than that of the first insulating material such as a silicone resin, which has been molten, can maintain an insulation resistance of at least 10.sup.3 M.OMEGA. in an atmosphere at 40.degree. C and a relative humidity of 90%.
摘要翻译：一种由金属管，插入金属管的电阻导体和填充在所述金属管和所述电阻导体之间的耐热绝缘材料组成的加热元件，其特征在于，所述耐热绝缘材料是通过涂覆第一诸如颗粒状熔融氧化镁之类的绝缘材料与具有比已熔化的第一绝缘材料（例如有机硅树脂）的熔融温度低的第二绝缘材料可以在气氛中保持至少103M的OMEGA的绝缘电阻 40℃，相对湿度90％。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式