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1. 发明授权

US07611586B2 Reactor for extended duration growth of gallium containing single crystals 有权
标题翻译：含镓单晶长时间生长反应器
公开(公告)号：US07611586B2
公开(公告)日：2009-11-03
申请号：US11868880
申请日：2007-10-08
申请人： Yuri V. Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Kaite Tsvetkov , Vladimir A. Dmitriev
发明人： Yuri V. Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Kaite Tsvetkov , Vladimir A. Dmitriev
IPC分类号： C23C16/00
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1016
摘要： An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译：提供一种用于生长体GaN和AlGaN单晶晶粒的装置，优选使用改进的HVPE工艺。单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。

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