专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10276589B2 Method of manufacturing semiconductor device 有权
公开(公告)号：US10276589B2
公开(公告)日：2019-04-30
申请号：US15499291
申请日：2017-04-27
申请人： Hyung Joon Kim , Yong Seok Cho , BiO Kim , Jung Ho Kim , Joong Yun Ra , Sung Hae Lee
发明人： Hyung Joon Kim , Yong Seok Cho , BiO Kim , Jung Ho Kim , Joong Yun Ra , Sung Hae Lee
IPC分类号： H01L27/11582 , H01L21/02 , H01L21/28 , H01L21/311 , H01L29/51 , H01L27/11565
摘要： A method of manufacturing a semiconductor device includes forming a mold structure including alternately stacked mold insulating and sacrificial layers on a substrate, forming a vertical structure through the mold structure, forming side openings by removing the sacrificial, forming a preliminary dielectric layer in the side openings, forming a dielectric layer by heat-treating the preliminary dielectric layer, removing a surface layer of the dielectric layer, forming a first conductive layer covering the dielectric layer in the side openings, and forming a second conductive layer covering the first conductive layer and filling the side openings.

2. 发明申请

US20170084626A1 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20170084626A1
公开(公告)日：2017-03-23
申请号：US15239434
申请日：2016-08-17
申请人： Seulye Kim , Ji-Hoon CHOI , Dongkyum KIM , Jung Ho KIM , Jintae NOH , Eun-Young LEE
发明人： Seulye Kim , Ji-Hoon CHOI , Dongkyum KIM , Jung Ho KIM , Jintae NOH , Eun-Young LEE
IPC分类号： H01L27/115 , H01L23/528 , H01L21/768 , H01L23/522
CPC分类号： H01L27/11582 , H01L21/76831 , H01L23/485 , H01L27/11565
摘要： A three-dimensional semiconductor device includes a plurality of stack structures extending in one direction on a substrate and spaced apart from each other, a plurality of vertical structures penetrating the stack structures, a common source plug between the stack structures that are adjacent to each other and extending in parallel to the stack structures, and a spacer structure at each side of the common source plug. The stack structure has a sidewall defining recess regions vertically spaced apart from each other. The spacer structure covers sidewalls of the stack structures. The spacer structure includes an insulating spacer and a protection spacer. The insulating spacer fills the recess regions of the stack structure and includes a surface having grooves. The protection spacer fills the grooves of the surface of the insulating spacer and has a substantially flat surface.

3. 发明申请

US20170033044A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20170033044A1
公开(公告)日：2017-02-02
申请号：US15160137
申请日：2016-05-20
申请人： Ji-Hoon CHOI , Jung Ho KIM , Dongkyum KIM , Seulye KIM , Jintae NOH , Hyun-Jin SHIN , SeungHyun LIM
发明人： Ji-Hoon CHOI , Jung Ho KIM , Dongkyum KIM , Seulye KIM , Jintae NOH , Hyun-Jin SHIN , SeungHyun LIM
IPC分类号： H01L23/522 , G11C8/10 , H01L23/532 , H01L21/768 , H01L27/115 , H01L23/528
摘要： A semiconductor device is provided. The semiconductor device includes a stack structure comprising insulating patterns and electrode structures alternately stacked on a substrate, and a vertical channel structure vertically penetrating the stack structure. Each of the electrode structures includes a conductive pattern having a first sidewall and a second sidewall opposite to the first sidewall, a first etching prevention pattern on the first sidewall, and a second etching prevention pattern on the second sidewall.
摘要翻译：提供半导体器件。半导体器件包括堆叠结构，其包括交替堆叠在衬底上的绝缘图案和电极结构以及垂直穿过堆叠结构的垂直沟道结构。每个电极结构包括具有第一侧壁和与第一侧壁相对的第二侧壁的导电图案，第一侧壁上的第一蚀刻防止图案和第二侧壁上的第二蚀刻防止图案。

4. 发明申请

US20150369234A1 METERING PUMP 审中-公开
标题翻译：计量泵
公开(公告)号：US20150369234A1
公开(公告)日：2015-12-24
申请号：US14761047
申请日：2014-01-20
申请人： Jung-Ho KIM
发明人： Jung-Ho KIM
IPC分类号： F04B43/08 , F04B43/00
CPC分类号： F04B43/084 , F04B9/045 , F04B13/00 , F04B43/0054
摘要： The present invention relates to a metering pump for continuously feeding a predetermined amount of a fluid. The present invention uses a used tire as a compression member 200b including a compression chamber 200a for pumping fluid. Fluid may be continuously pumped in a unit of a predetermined amount by check valves v1 and v2 of a fluid introduction pipe 401 and a fluid discharge pipe connected to the compression chamber 200a by a flexible operation of the compression member 200b by performing a reciprocating motion for a shaft 305 connected to a crank 303 cooperating with a plurality of compression members 200b by a drive motor in an axial direction of the compression member.
摘要翻译：本发明涉及一种用于连续供给预定量的流体的计量泵。本发明使用二轮胎作为包括用于泵送流体的压缩室200a的压缩构件200b。流体可以通过流体导入管401的止回阀v1和v2以及通过压缩构件200b的柔性操作连接到压缩室200a的流体排出管以预定量的单位连续泵送，通过执行往复运动与通过驱动马达在压缩构件的轴向上与多个压缩构件200b配合的曲柄303连接的轴305。

5. 发明授权

US09036842B2 Positioning and reproducing screen sound source with high resolution 有权
标题翻译：定位和再现高分辨率的屏幕声源
公开(公告)号：US09036842B2
公开(公告)日：2015-05-19
申请号：US12483693
申请日：2009-06-12
申请人： Jung-ho Kim , So-young Jeong , Jeong-su Kim
发明人： Jung-ho Kim , So-young Jeong , Jeong-su Kim
IPC分类号： H04R5/02 , H04N5/60 , H04R3/12 , H04S7/00
CPC分类号： H04R3/12 , H04R2400/11 , H04R2420/07 , H04R2430/03 , H04R2499/15 , H04S3/008 , H04S7/30 , H04S2400/11 , H04S2420/07
摘要： A virtual screen sound source is spatially synchronized with a visual object displayed on a display. A plurality of loudspeaker sets, which each include at least three of a plurality of loudspeakers installed at the periphery of a display, are selected, individual sound sources corresponding to the respective selected loudspeaker sets are generated, and a multi-sound source is generated by overlapping the generated individual sound sources and output through loudspeakers included in the loudspeaker sets.
摘要翻译：虚拟屏幕声源与显示器上显示的视觉对象在空间上同步。选择多个扬声器组，每个扬声器组包括安装在显示器周边的多个扬声器中的至少三个扬声器组，产生对应于各个选定扬声器组的各个声源，并且通过以下方式产生多声源：通过扬声器组中包含的扬声器重叠生成的各个声源并输出。

6. 发明授权

US08855332B2 Sound enhancement apparatus and method 有权
标题翻译：声音增强装置及方法
公开(公告)号：US08855332B2
公开(公告)日：2014-10-07
申请号：US12957474
申请日：2010-12-01
申请人： Jung-Woo Choi , Jung-Ho Kim , Young-Tae Kim , Sang-Chul Ko
发明人： Jung-Woo Choi , Jung-Ho Kim , Young-Tae Kim , Sang-Chul Ko
IPC分类号： H03G3/00 , H04S7/00
CPC分类号： H04S7/307 , G10H1/12 , G10H1/46 , G10H2210/301 , G10H2250/031 , H04R3/04 , H04R2430/03 , H04S2400/09 , H04S2420/07
摘要： A sound enhancement apparatus and method which produce low IMD over a broadband frequency region and performs BSE to offer a sound which is natural to the human ears, are provided. The sound enhancement apparatus includes a preprocessor, a BSE signal generator, and a gain controller. The preprocessor divides a source signal into a high-frequency signal and a low-frequency signal and analyzes the low-frequency signal to obtain prediction information regarding a degree of distortion that will be generated by the low-frequency signal. The BSE signal generator generates a higher harmonic signal for the low-frequency signal as a BSE signal to be substituted for the low-frequency signal, wherein the order of the higher harmonic signal is adjusted based on the prediction information regarding the degree of distortion. The gain controller adjusts a synthesis ratio of the low-frequency signal and the BSE signal adaptively depending on the prediction information regarding the degree of distortion.
摘要翻译：提供了一种在宽带频率区域上产生低IMD并且执行BSE以提供对人耳天然的声音的声音增强装置和方法。声音增强装置包括预处理器，BSE信号发生器和增益控制器。预处理器将源信号分成高频信号和低频信号，并分析低频信号以获得关于由低频信号产生的失真程度的预测信息。 BSE信号发生器产生用于低频信号的高次谐波信号作为BSE信号来代替低频信号，其中基于关于失真度的预测信息来调整高次谐波信号的阶数。增益控制器根据关于失真程度的预测信息自适应地调整低频信号和BSE信号的合成比。

7. 发明授权

US08777859B2 Method and apparatus for processing ultrasound image 有权
标题翻译：用于处理超声图像的方法和装置
公开(公告)号：US08777859B2
公开(公告)日：2014-07-15
申请号：US13545634
申请日：2012-07-10
申请人： Yun-tae Kim , Jung-ho Kim
发明人： Yun-tae Kim , Jung-ho Kim
IPC分类号： A61B8/00 , G06K9/00
CPC分类号： A61B8/5269 , A61B8/145 , A61B8/483 , G01S7/52077 , G06T5/002 , G06T5/50 , G06T2207/10136 , G06T2207/20021 , G06T2207/20064 , G06T2207/20192 , G06T2207/30004
摘要： A method of processing an ultrasound image includes generating a plurality of two-dimensional (2D) ultrasound images from three-dimensional (3D) ultrasound volume data of an object to be diagnosed, generating a plurality of tissue edge images of an edge of at least one tissue component in the object to be diagnosed based on values of a plurality of pixels forming each of the 2D ultrasound images generated from the 3D ultrasound volume data, and generating a 2D ultrasound image from which a noise component has been removed by discriminating the edge of the at least one tissue component from a position of the noise component based on a difference between a similarity of the edge of the at least one tissue component in the tissue edge images and a similarity of the noise component in the tissue edge images.
摘要翻译：一种处理超声图像的方法包括从待诊断对象的三维（3D）超声体积数据生成多个二维（2D）超声图像，生成至少边缘的多个组织边缘图像基于从3D超声体积数据生成的形成每个2D超声波图像的多个像素的值的待诊断物体中的一个组织分量，并且生成通过区分边缘来除去噪声分量的2D超声图像基于组织边缘图像中的至少一个组织分量的边缘的相似度与组织边缘图像中的噪声分量的相似度之间的差异，从噪声分量的位置获取至少一个组织分量。

8. 发明授权

US08686730B2 System for streamer electrical resistivity survey and method for analysis of underground structure below a riverbed 有权
标题翻译：拖缆电阻率测量系统及河床下方地下结构分析方法
公开(公告)号：US08686730B2
公开(公告)日：2014-04-01
申请号：US13228160
申请日：2011-09-08
申请人： Seong-Jun Cho , Jung-Ho Kim , Myeong-Jong Yi , Jeong Sul Son
发明人： Seong-Jun Cho , Jung-Ho Kim , Myeong-Jong Yi , Jeong Sul Son
IPC分类号： G01V3/12 , G06F19/00
CPC分类号： G01V3/15
摘要： A system for measuring electrical resistivity survey checks a border of bedrock or a thickness of a sedimentary layer in a riverbed of a river or lake within a short time. A method for analysis of an underground structure of a riverbed using the same is also provided. The system for streamer electric resistivity survey using a survey boat includes a streamer cable connected to the survey boat and having a plurality of electrodes attached thereto, a multi-channel resistivity meter loaded on the survey boat to measure electric resistivity from the plurality of electrodes, a first RTK GPS (Real Time Kinematic Global Positioning System) loaded on the survey boat to measure a position of the survey boat in real time, and a second RTK GPS installed to a tail of the streamer cable to measure a position of the tail in real time.
摘要翻译：用于测量电阻率测量的系统在短时间内检查河床或湖泊河床的基岩边界或沉积层的厚度。还提供了使用该方法分析河床的地下结构的方法。使用调查船的拖缆电阻率测量系统包括连接到检验船并具有附接到其上的多个电极的拖缆，安装在检验船上的多通道电阻率计，以测量多个电极的电阻率，装载在检验船上的第一个RTK GPS（实时运动全球定位系统），以实时测量测量船的位置，并将第二个RTK GPS安装到拖缆的尾部，以测量尾部的位置即时的。

9. 发明授权

US08445343B2 Methods of fabricating semiconductor devices including semiconductor layers formed in stacked insulating layers 有权
标题翻译：制造包括形成在层叠绝缘层中的半导体层的半导体器件的方法
公开(公告)号：US08445343B2
公开(公告)日：2013-05-21
申请号：US13030729
申请日：2011-02-18
申请人： Jung Ho Kim , Kihyun Hwang , Sangryol Yang , Yong-Hoon Sang , Ju-Eun Kim
发明人： Jung Ho Kim , Kihyun Hwang , Sangryol Yang , Yong-Hoon Sang , Ju-Eun Kim
IPC分类号： H01L21/8242 , H01L21/8244
CPC分类号： H01L29/66833 , H01L27/11578 , H01L27/11582 , H01L29/7926
摘要： Methods of fabricating a semiconductor device include alternatingly and repeatedly stacking sacrificial layers and first insulating layers on a substrate, forming an opening penetrating the sacrificial layers and the first insulating layers, and forming a spacer on a sidewall of the opening, wherein a bottom surface of the opening is free of the spacer. A semiconductor layer is formed in the opening. Related devices are also disclosed.
摘要翻译：制造半导体器件的方法包括在衬底上交替地且重复地堆叠牺牲层和第一绝缘层，形成贯穿牺牲层和第一绝缘层的开口，以及在开口的侧壁上形成间隔物，其中，开口没有间隔件。在开口中形成半导体层。还公开了相关设备。

10. 发明申请

US20130065369A1 THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：三维半导体存储器件及其制造方法
公开(公告)号：US20130065369A1
公开(公告)日：2013-03-14
申请号：US13671948
申请日：2012-11-08
申请人： Sang-Ryol Yang , Yoo-Chul Kong , Jung-Ho Kim , Jin-Gyun Kim , Jae-Jin Shin , Ji-Hoon Choi
发明人： Sang-Ryol Yang , Yoo-Chul Kong , Jung-Ho Kim , Jin-Gyun Kim , Jae-Jin Shin , Ji-Hoon Choi
IPC分类号： H01L21/336
CPC分类号： H01L27/11582 , H01L27/11524 , H01L27/11556 , H01L27/1157
摘要： Methods of forming vertical nonvolatile memory devices may include forming an electrically insulating layer, which includes a composite of a sacrificial layer sandwiched between first and second mold layers. An opening extends through the electrically insulating layer and exposes inner sidewalls of the first and second mold layers and the sacrificial layer. A sidewall of the opening may be lined with an electrically insulating protective layer and a first semiconductor layer may be formed on an inner sidewall of the electrically insulating protective layer within the opening. At least a portion of the sacrificial layer may then be selectively etched from between the first and second mold layers to thereby define a lateral recess therein, which exposes an outer sidewall of the electrically insulating protective layer.
摘要翻译：形成垂直非易失性存储器件的方法可以包括形成电绝缘层，其包括夹在第一和第二模具层之间的牺牲层的复合材料。开口延伸穿过电绝缘层并暴露第一和第二模具层和牺牲层的内侧壁。开口的侧壁可以衬有电绝缘保护层，并且可以在开口内的电绝缘保护层的内侧壁上形成第一半导体层。然后可以从第一和第二模具层之间选择性地蚀刻牺牲层的至少一部分，从而在其中限定其中暴露电绝缘保护层的外侧壁的横向凹部。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式