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    • 1. 发明申请
    • Pyroelectric sensor
    • 热电传感器
    • US20070108385A1
    • 2007-05-17
    • US10546613
    • 2004-02-20
    • Joseph ManteseNorman SchubringAdolph MicheliCarlos De AraujoLarry McMillanJolanta Celinska
    • Joseph ManteseNorman SchubringAdolph MicheliCarlos De AraujoLarry McMillanJolanta Celinska
    • G01J5/00
    • G01J5/34
    • A ferroelectric/pyroelectric sensor employs a technique for determining a charge output of a ferroelectric scene element of the sensor by measuring the hysteresis loop output of the scene element several times during a particular time frame for the same temperature. An external AC signal is applied to the ferroelectric scene element to cause the hysteresis loop output from the element to switch polarization. Charge integration circuitry, such as a combination output capacitor and operational amplifier, is employed to measure the charge from the scene element. Preferably, the ferroelectric of the scene element is made of an economical and responsive strontium bismuth tantalate, SBT, or derivative thereof, disposed directly between top and bottom electrodes. Because of the frequency characteristics of the sensor, created by the external AC signal, the element need not be thermally isolated from the silicon substrate by a traditional air bridge, which is difficult to manufacture, and instead is preferably thermally isolated by spin-on-glass, SOG. To prevent saturation of an output signal voltage of the sensor by excessive charge accumulation in an output capacitor, the sensor preferably has a reference element configured electrically in parallel with the scene element. When the voltage of the AC signal is negative the output capacitor is discharged by flowing current through the reference element thus interrogating the polarization of the reference element which is compared to and subtracted from the polarization of the scene element for each cycle. The polarization difference measured for each cycle over a set time period are summed by an integrating amplifier to produce a signal output voltage.
    • 铁电/热电传感器采用用于通过在相同温度的特定时间段内多次测量场景元件的磁滞回线输出来确定传感器的铁电场景元件的电荷输出的技术。 外部交流信号被施加到铁电场景元件以使得从元件输出的磁滞回线转换偏振。 采用诸如组合输出电容器和运算放大器的电荷积分电路来测量场景元件中的电荷。 优选地,场景元件的铁电体由直接设置在顶部和底部电极之间的经济且响应的钽酸铋铋钡,或其衍生物制成。 由于由外部AC信号产生的传感器的频率特性,该元件不需要通过难以制造的传统空气桥与硅衬底热隔离,而是优选地通过旋转隔离热隔离, 玻璃,SOG。 为了通过输出电容器中的过度电荷积累来防止传感器的输出信号电压的饱和,传感器优选地具有与场景元件电并联配置的参考元件。 当AC信号的电压为负时,输出电容器通过流过参考元件的电流而被放电,从而询问参考元件的偏振,该参考元件的偏振与每个周期的场景元素的偏振相比较和减去。 在设定的时间周期内对每个周期测量的偏振差由积分放大器相加以产生信号输出电压。
    • 3. 发明申请
    • Assembly for measuring movement of and a torque applied to a shaft
    • 用于测量施加到轴的运动和扭矩的组件
    • US20050160834A1
    • 2005-07-28
    • US10763499
    • 2004-01-23
    • Thomas NehlThomas SteenkisteJohn SmithBrian FullerAvoki OmekandaDonald MorelliJoseph Mantese
    • Thomas NehlThomas SteenkisteJohn SmithBrian FullerAvoki OmekandaDonald MorelliJoseph Mantese
    • G01L3/10G01L3/02
    • G01L3/102G01L3/103
    • The subject invention provides an assembly for measuring movement of and a torque applied to a shaft extending between first and second ends and being hollow, specifically for measuring rotation and twisting of the shaft. A permanent magnet is disposed within the shaft for producing a parallel magnetic field emanating radially from the shaft. A sensor mechanism is positioned adjacent the shaft to detect the magnetic flux produced in response to the shaft being moved. The sensor mechanism includes a magnetostrictive (MR) material disposed annularly about the shaft and extends between first and second edges. A flux collector extends beyond the first and second edges of the magnetostrictive material to direct the magnetic flux through a Hall sensor to detect an axial component of the magnetic flux in response to twisting. A positional ring extends annularly around and spaced from the shaft and a positional sensor is disposed between the positional ring and the shaft for measuring a radial component of the magnetic flux in response to rotating.
    • 本发明提供了一种用于测量施加到在第一和第二端之间延伸并且是中空的轴的转矩和扭矩的组件,具体地用于测量轴的旋转和扭转。 永磁体设置在轴内,用于产生从轴径向发出的平行磁场。 传感器机构定位在轴附近,以检测响应于轴被移动产生的磁通量。 传感器机构包括围绕轴设置成环状并在第一和第二边缘之间延伸的磁致伸缩(MR)材料。 磁通收集器延伸超出磁致伸缩材料的第一和第二边缘,以引导磁通量通过霍尔传感器,以响应于扭转来检测磁通量的轴向分量。 位置环围绕轴线环绕并且间隔开,并且位置传感器设置在位置环和轴之间,用于响应于旋转来测量磁通量的径向分量。
    • 5. 发明申请
    • System and method for controlling pyroelectric sensors in a focal plane array
    • 用于控制焦平面阵列中的热电传感器的系统和方法
    • US20060180759A1
    • 2006-08-17
    • US11353561
    • 2006-02-14
    • Joseph ManteseAndrzej Pawlak
    • Joseph ManteseAndrzej Pawlak
    • G01J5/00
    • G01J5/34
    • A system and a method for controlling pyroelectric sensors in a focal plane array are provided. The method includes applying a first oscillatory voltage waveform to first and second pyroelectric sensors in the focal plane array such that the first and second pyroelectric sensors receive a first predetermined number of cycles of the first oscillatory voltage waveform over a first time period. The first pyroelectric sensor receives infrared radiation thereon. The method further includes generating a first output signal using the first and second pyroelectric, sensors during the first time period indicative of a temperature of the first pyroelectric sensor. The method further includes applying a second oscillatory voltage waveform to third and fourth pyroelectric sensors in the focal plane array such that the third and fourth pyroelectric sensors receive a second predetermined number of cycles of the first oscillatory voltage waveform over the first time period. The third pyroelectric sensor receives infrared radiation thereon. The method further includes generating a second output signal using the third and fourth pyroelectric sensors during the first time period indicative of a temperature of the third pyroelectric sensor.
    • 提供了一种用于控制焦平面阵列中的热电传感器的系统和方法。 该方法包括将第一振荡电压波形施加到焦平面阵列中的第一和第二热电传感器,使得第一和第二热电传感器在第一时间段内接收第一振荡电压波形的第一预定数量的周期。 第一热电传感器在其上接收红外辐射。 该方法还包括使用第一和第二热电传感器在第一时间段期间产生指示第一热电传感器的温度的第一输出信号。 该方法还包括将第二振荡电压波形应用于焦平面阵列中的第三和第四热电传感器,使得第三和第四热电传感器在第一时间段内接收第一振荡电压波形的第二预定数量的周期。 第三热电传感器在其上接收红外辐射。 该方法还包括在表示第三热电传感器的温度的第一时间段期间使用第三和第四热电传感器产生第二输出信号。
    • 7. 发明申请
    • Filter assembly and method of filtering electromagnetic radiation
    • 过滤组件及过滤电磁辐射的方法
    • US20060181479A1
    • 2006-08-17
    • US11353355
    • 2006-02-14
    • Joseph ManteseAndrzej Pawlak
    • Joseph ManteseAndrzej Pawlak
    • H01Q15/02
    • G01J5/34G01J3/12G01J2003/1213G02F1/05G02F2203/055H01Q15/002
    • A filter assembly and a method for filtering electromagnetic radiation are provided. The filter assembly includes a dielectric layer having a first side and a second side. The filter assembly further includes a first conductive layer disposed on the first side of the dielectric layer. The filter assembly further includes a second conductive layer disposed on the second side of the dielectric layer. The filter assembly further includes a voltage source electrically coupled to the first and second conductive layers. The voltage source is configured to generate a first voltage signal that adjusts a dielectric constant value of the dielectric layer to a first desired dielectric constant value to filter electromagnetic radiation impinging on the first conductive layer. The voltage source is further configured to generate a second voltage signal that adjusts the dielectric constant value of the dielectric layer to a second desired dielectric constant value to filter electromagnetic radiation impinging on the first conductive layer.
    • 提供了一种滤波器组件和用于滤波电磁辐射的方法。 过滤器组件包括具有第一侧和第二侧的电介质层。 滤波器组件还包括设置在电介质层的第一侧上的第一导电层。 滤波器组件还包括设置在电介质层的第二侧上的第二导电层。 滤波器组件还包括电耦合到第一和第二导电层的电压源。 电压源被配置为产生第一电压信号,该第一电压信号将电介质层的介电常数值调整到第一期望的介电常数值,以滤除照射在第一导电层上的电磁辐射。 电压源还被配置为产生第二电压信号,该第二电压信号将电介质层的介电常数值调整到第二期望的介电常数值,以滤除照射在第一导电层上的电磁辐射。
    • 9. 发明申请
    • INFRARED SENSORS AND METHODS FOR MANUFACTURING THE INFRARED SENSORS
    • 红外传感器和制造红外传感器的方法
    • US20080185522A1
    • 2008-08-07
    • US11671662
    • 2007-02-06
    • Shih-Chia ChangJoseph Mantese
    • Shih-Chia ChangJoseph Mantese
    • G01J5/08
    • H01L31/09H01L31/032H01L31/18
    • Infrared sensors and methods for manufacturing the infrared sensors are provided. In one exemplary embodiment, the method includes A method for manufacturing an infrared sensor in accordance with another exemplary embodiment is proved. The method includes depositing a germanium layer on a silicon substrate. The method further includes depositing a first electrically conductive layer on both the germanium layer and a portion of the silicon substrate. The method further includes depositing a ferroelectric layer on the first electrically conductive layer opposite the germanium layer. The method further includes depositing a second electrically conductive layer on both the ferroelectric layer and a portion of the silicon substrate. The method further includes removing the germanium layer by applying a liquid on the germanium layer that dissolves the germanium layer such that a cavity is formed between the first electrically conductive layer and the silicon substrate.
    • 提供红外传感器和制造红外传感器的方法。 在一个示例性实施例中,该方法包括根据另一示例性实施例的用于制造红外传感器的方法。 该方法包括在硅衬底上沉积锗层。 该方法还包括在锗层和硅衬底的一部分上沉积第一导电层。 该方法还包括在与锗层相对的第一导电层上沉积铁电层。 所述方法还包括在所述铁电层和所述硅衬底的一部分上沉积第二导电层。 该方法还包括通过在锗层上施加溶解锗层的液体来除去锗层,使得在第一导电层和硅衬底之间形成腔体。