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    • 3. 发明授权
    • Integrated circuit chip and method for cooling an integrated circuit chip
    • 用于冷却集成电路芯片的集成电路芯片和方法
    • US07411290B2
    • 2008-08-12
    • US11198683
    • 2005-08-05
    • Poh-Seng LeeShih-Chia Chang
    • Poh-Seng LeeShih-Chia Chang
    • H01L23/34H05K7/20
    • H01L23/473H01L2924/0002H01L2924/00
    • An integrated circuit chip is provided, the integrated circuit chip having: a base portion, the base portion having a peripheral wall forming an elevated perimeter depending away from a surface of the base potion; a plurality of extensions extending away from the surface, a periphery of each of the plurality of extensions being spaced away from the peripheral wall, the plurality of extensions further comprising a first group of extensions and a second group of extensions, each of the first group of extensions having a greater peripheral area than a peripheral area of each of the second group of extensions and the first group of extensions being aligned with a portion of an integrated circuit disposed on another surface of the base, the portion of the integrated circuit generating a higher heat flux than other portions of the integrated circuit, and a plate secured to the elevated perimeter, the plate the plate covering the plurality of extensions and further comprising an inlet opening and an outlet opening.
    • 提供一种集成电路芯片,所述集成电路芯片具有:基部,所述基部具有形成远离所述基部部分的表面的升高的周边的周壁; 多个延伸部分远离表面延伸,多个延伸部分的周边与外围壁间隔开,多个延伸部分还包括第一组延伸部分和第二组延伸部分,每个第一组件 所述延伸部具有比所述第二组延伸部的每个的周边区域更大的外围区域,并且所述第一组延伸部与设置在所述基座的另一表面上的集成电路的一部分对准,所述集成电路的所述部分产生 比集成电路的其他部分更高的热通量,以及固定到升高的周边的板,所述板覆盖多个延伸部,并且还包括入口和出口。
    • 4. 发明申请
    • INFRARED SENSORS AND METHODS FOR MANUFACTURING THE INFRARED SENSORS
    • 红外传感器和制造红外传感器的方法
    • US20080185522A1
    • 2008-08-07
    • US11671662
    • 2007-02-06
    • Shih-Chia ChangJoseph Mantese
    • Shih-Chia ChangJoseph Mantese
    • G01J5/08
    • H01L31/09H01L31/032H01L31/18
    • Infrared sensors and methods for manufacturing the infrared sensors are provided. In one exemplary embodiment, the method includes A method for manufacturing an infrared sensor in accordance with another exemplary embodiment is proved. The method includes depositing a germanium layer on a silicon substrate. The method further includes depositing a first electrically conductive layer on both the germanium layer and a portion of the silicon substrate. The method further includes depositing a ferroelectric layer on the first electrically conductive layer opposite the germanium layer. The method further includes depositing a second electrically conductive layer on both the ferroelectric layer and a portion of the silicon substrate. The method further includes removing the germanium layer by applying a liquid on the germanium layer that dissolves the germanium layer such that a cavity is formed between the first electrically conductive layer and the silicon substrate.
    • 提供红外传感器和制造红外传感器的方法。 在一个示例性实施例中,该方法包括根据另一示例性实施例的用于制造红外传感器的方法。 该方法包括在硅衬底上沉积锗层。 该方法还包括在锗层和硅衬底的一部分上沉积第一导电层。 该方法还包括在与锗层相对的第一导电层上沉积铁电层。 所述方法还包括在所述铁电层和所述硅衬底的一部分上沉积第二导电层。 该方法还包括通过在锗层上施加溶解锗层的液体来除去锗层,使得在第一导电层和硅衬底之间形成腔体。
    • 7. 发明授权
    • Resonant accelerometer
    • 谐振加速度计
    • US4805456A
    • 1989-02-21
    • US52026
    • 1987-05-19
    • Roger T. HoweShih-Chia Chang
    • Roger T. HoweShih-Chia Chang
    • G01P15/097G01P15/10G01P15/18
    • G01P15/18G01P15/097G01P2015/084Y10S73/01
    • An accelerometer is provided by a sample mass suspended in a central area of a support by pairs of resonating arms. One pair of arms lies on one axis through the sample mass. Another pair of arms lies on a second axis through the sample mass perpendicular to the one axis. Acceleration of the mass and support is detected by a measured change in resonant frequency of the arms of a pair. The measured change in resonant frequency is the magnitude of the acceleration and the axis along which the pair of arms lies provides the direction of the acceleration. Orthogonal components of acceleration are simultaneously measured by the pairs of arms lying on perpendicular axes. Electrostatic force-rebalance techniques and other known techniques for measuring acceleration in a direction perpendicular to the axes of the pairs of arms are readily incorporated to provide a third direction measurement of acceleration. The accelerometer is fabricated in a monolithic process which employs micromachining techniques.
    • 加速度计由悬挂在支撑体的中心区域中的一对样品质量块组成,由一对谐振臂提供。 一对臂位于通过样品块的一个轴上。 另一对臂位于垂直于一个轴的样品质量的第二轴上。 通过测量一对臂的谐振频率的变化来检测质量和支撑的加速度。 谐振频率的测量变化是加速度的大小,一对臂所在的轴提供加速度的方向。 通过位于垂直轴上的成对的臂同时测量加速度的正交分量。 用于测量垂直于成对的轴的方向的加速度的静电 - 重新平衡技术和其它已知的技术很容易结合,以提供加速度的第三方向测量。 加速度计采用微加工技术制成的单片工艺。