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1. 发明申请

US20120074405A1 Process for the Simultaneous Deposition of Crystalline and Amorphous Layers with Doping 有权
标题翻译：用掺杂法同时沉积结晶和无定形层的方法
公开(公告)号：US20120074405A1
公开(公告)日：2012-03-29
申请号：US13314595
申请日：2011-12-08
申请人： Herbert Schäfer , Martin Franosch , Thomas Meister , Josef Böck
发明人： Herbert Schäfer , Martin Franosch , Thomas Meister , Josef Böck
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L21/02639 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02661
摘要： One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics.
摘要翻译：本发明的一个实施例涉及利用原位差分外延在半导体主体上同时沉积多个不同结晶结构的方法。在本发明的一个实施方案中，形成制备表面，得到两个不同的结晶区域，单晶硅衬底区域和隔离层区域。单晶硅层和非晶硅层同时直接分布在单晶硅衬底区域和隔离层区域的制备表面上。沉积包括形成两个或更多个子层。可以为每个单独的子层改变工艺参数以优化沉积特性。

2. 发明授权

US06381868B1 Device for dewatering a material web 失效
标题翻译：脱水材料网的装置
公开(公告)号：US06381868B1
公开(公告)日：2002-05-07
申请号：US09675653
申请日：2000-09-29
申请人： Joachim Grabscheid , Karl Josef Böck , Ulrich Begemann , Thomas Elenz , Peter Mirsberger , Hans Dahl , Hannes Vomhoff , David Beck
发明人： Joachim Grabscheid , Karl Josef Böck , Ulrich Begemann , Thomas Elenz , Peter Mirsberger , Hans Dahl , Hannes Vomhoff , David Beck
IPC分类号： D06F5800
CPC分类号： D21F3/0254
摘要： Apparatus and process for dewatering a material web. The apparatus includes at least one pressure chamber formed by at least four substantially parallel rolls, a device arranged to introduce a pressurized gas into the at least one pressure chamber, and the at least four substantially parallel rolls being displaceable relative to one another to change an effective area of the at least one pressure chamber. The material web is guided through the at least one pressure chamber. The process includes pressurizing at least one pressure chamber with a gas medium, guiding the material web through the pressure chamber, driving water out of the material web using gas pressure within the at least one pressure chamber, and changing an effective area of the pressure chamber so as to adjust a dewatering capacity.
摘要翻译：用于脱水材料网的设备和方法。该装置包括由至少四个基本上平行的辊形成的至少一个压力室，被布置成将加压气体引入至少一个压力室中的装置，并且所述至少四个基本平行的辊可相对于彼此移位，至少一个压力室的有效面积。材料纤维网被引导通过至少一个压力室。该方法包括用气体介质对至少一个压力室进行加压，将材料纤维网引导通过压力室，使用至少一个压力室内的气体压力将水从材料纤维网中排出，并改变压力室的有效面积以调整脱水能力。

3. 发明申请

US20110133188A1 Process for Simultaneous Deposition of Crystalline and Amorphous Layers with Doping 有权
标题翻译：同时沉积具有掺杂的结晶和无定形层的方法
公开(公告)号：US20110133188A1
公开(公告)日：2011-06-09
申请号：US13026326
申请日：2011-02-14
申请人： Herbert Schäfer , Martin Franosch , Thomas Meister , Josef Böck
发明人： Herbert Schäfer , Martin Franosch , Thomas Meister , Josef Böck
IPC分类号： H01L29/06
CPC分类号： H01L21/02639 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02661
摘要： One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics.
摘要翻译：本发明的一个实施例涉及利用原位差分外延在半导体主体上同时沉积多个不同结晶结构的方法。在本发明的一个实施方案中，形成制备表面，得到两个不同的结晶区域，单晶硅衬底区域和隔离层区域。单晶硅层和非晶硅层同时直接分布在单晶硅衬底区域和隔离层区域的制备表面上。沉积包括形成两个或更多个子层。可以为每个单独的子层改变工艺参数以优化沉积特性。

4. 发明授权

US07873433B2 Production optimization using data received from a removable component 失效
标题翻译：使用从可移动组件接收的数据进行生产优化
公开(公告)号：US07873433B2
公开(公告)日：2011-01-18
申请号：US11560415
申请日：2006-11-16
申请人： Karl Josef Böck , Herbert Schrefl , Peter Putschögl , Georg Gobec , Norbert Gamsjäger
发明人： Karl Josef Böck , Herbert Schrefl , Peter Putschögl , Georg Gobec , Norbert Gamsjäger
IPC分类号： G06F19/00 , G06F7/66
CPC分类号： D21G9/0027 , D21F1/0027 , D21F3/0227 , D21F7/08 , D21F7/086 , D21G1/0233 , D21G9/0036
摘要： This invention relates to a system and a method for optimization of the process performance of a web-processing machine, in particular a machine for the production or further processing of paper, paperboard or tissue, including the following steps: storage of specific data of a component on a data storage unit fitted to the component; and/or measurement of relevant properties of the component by way of a sensor unit fitted to the component; sending of the specific data and/or the measured relevant properties to an open-loop control unit and/or a closed-loop control unit; and optimization of the process performance by way of the open-loop control unit and/or the closed-loop control unit using specific data and/or the measured properties of the component.
摘要翻译：本发明涉及一种用于优化卷筒纸加工机器，特别是用于生产或进一步加工纸张，纸板或纸巾的机器的工艺性能的系统和方法，包括以下步骤：存储组件安装在组件上的数据存储单元上; 和/或通过安装在部件上的传感器单元来测量部件的相关属性; 将特定数据和/或所测量的相关属性发送到开环控制单元和/或闭环控制单元; 以及利用开环控制单元和/或闭环控制单元使用特定数据和/或测量的特性来优化过程性能。

5. 发明申请

US20100155896A1 HIGH-FREQUENCY BIPOLAR TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF 有权
标题翻译：高频双极晶体管及其生产方法
公开(公告)号：US20100155896A1
公开(公告)日：2010-06-24
申请号：US12716692
申请日：2010-03-03
申请人： Josef Böck , Thomas Meister , Reinhard Stengl , Herbert Schafer
发明人： Josef Böck , Thomas Meister , Reinhard Stengl , Herbert Schafer
IPC分类号： H01L29/73
CPC分类号： H01L29/66272 , H01L29/0821 , H01L29/41708 , H01L29/732
摘要： A high-frequency bipolar transistor includes an emitter contact adjoining an emitter connection region, a base contact adjoining a base connection region, and a collector contact adjoining a collector connection region. A first insulation layer is disposed on the base connection region. The collector connection region contains a buried layer, which connects the collector contact to a collector zone. A silicide or salicide region is provided on the buried layer and connects the collector contact to the collector zone in a low-impedance manner. A second insulation layer is disposed on the collector connection region but not on the silicide region.
摘要翻译：高频双极晶体管包括邻接发射极连接区域的发射极接触件，邻接基极连接区域的基极接触件和邻接集电极连接区域的集电极接触件。第一绝缘层设置在基底连接区域上。集电极连接区域包含埋设层，该埋层将集电极触点连接到集电区。在掩埋层上提供硅化物或自对准硅化物区域，并以低阻抗方式将集电极触点连接到集电极区域。第二绝缘层设置在集电极连接区域上，但不在硅化物区域上。

6. 发明授权

US07371650B2 Method for producing a transistor structure 有权
标题翻译：晶体管结构的制造方法
公开(公告)号：US07371650B2
公开(公告)日：2008-05-13
申请号：US10532894
申请日：2003-10-24
申请人： Josef Böck , Rudolf Lachner , Thomas Meister , Reinhard Stengl , Herbert Schäfer , Martin Seck
发明人： Josef Böck , Rudolf Lachner , Thomas Meister , Reinhard Stengl , Herbert Schäfer , Martin Seck
IPC分类号： H01L21/331
CPC分类号： H01L29/66272 , H01L21/8222 , H01L27/0825 , H01L29/0821
摘要： A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate, introducing a first buried layer of the first bipolar transistor and a second buried layer of the second bipolar transistor into the semiconductor substrate, and producing at least a first collector region having a first collector width on the first buried layer and a second collector region having a second collector width on the second buried layer. A first collector zone having a first thickness is produced on the second buried layer for production of the second collector width. A second collector zone having a second thickness is produced on the first collector zone. At least one insulation region is produced that isolates at least the collector regions from one another.
摘要翻译：提出了一种制造具有不同集电极宽度的第一和第二双极晶体管的晶体管结构的方法。该方法包括提供半导体衬底，将第一双极晶体管的第一掩埋层和第二双极晶体管的第二掩埋层引入到半导体衬底中，并且至少在第一掩埋层上产生具有第一集电极宽度的第一集电极区域层和在第二掩埋层上具有第二集电极宽度的第二集电极区。在第二掩埋层上产生具有第一厚度的第一收集器区，用于产生第二收集器宽度。在第一收集器区域上产生具有第二厚度的第二收集器区域。产生至少一个绝缘区域，其至少隔离收集器区域彼此。

7. 发明授权

US06635545B2 Method for fabricating a bipolar transistor and method for fabricating an integrated circuit configuration having such a bipolar transistor 失效
公开(公告)号：US06635545B2
公开(公告)日：2003-10-21
申请号：US10160630
申请日：2002-06-03
申请人： Josef Böck , Wolfgang Klein , Herbert Schäfer , Martin Franosch , Thomas Meister , Reinhard Stengl
发明人： Josef Böck , Wolfgang Klein , Herbert Schäfer , Martin Franosch , Thomas Meister , Reinhard Stengl
IPC分类号： H01L21331
CPC分类号： H01L29/66287 , H01L29/66242
摘要： The bipolar transistor is produced such that a connection region of its base is provided with a silicide layer, so that a base resistance of the bipolar transistor is small. No silicide layer is produced between an emitter and an emitter contact and between a connection region of a collector and a collector contact. The base is produced by in situ-doped epitaxy in a region in which a first insulating layer is removed by isotropic etching such that the connection region of the base which is arranged on the first insulating layer is undercut. In order to avoid defects of a substrate in which the bipolar transistor is partly produced, isotropic etching is used for the patterning of auxiliary layers, whereby etching is selective with respect to auxiliary layers lying above, which are patterned by anisotropic etching.

8. 发明授权

US06668469B2 Removal device 失效
标题翻译：拆卸装置
公开(公告)号：US06668469B2
公开(公告)日：2003-12-30
申请号：US09820711
申请日：2001-03-30
申请人： Peter Kahl , Markus Oechsle , Karl Josef Böck , Thomas Augscheller , Stefan Dette
发明人： Peter Kahl , Markus Oechsle , Karl Josef Böck , Thomas Augscheller , Stefan Dette
IPC分类号： F26B300
CPC分类号： D21F7/04 , D21F5/042 , D21G9/0063
摘要： Device and process for removing a fibrous material web from a drying section of a machine for producing and/or refining the fibrous material web and into a catch device. The drying section includes heated drying cylinders, guidance rolls, and at least one drying wire arranged such that the fibrous material web is guided through the drying section over the heated drying cylinders and the guidance rolls at least predominately by the at least one drying wire. The device includes at least one controllable separating device arranged to at least reduce an adhesion force between the fibrous material web and the at least one drying wire.
摘要翻译：用于从用于生产和/或精炼纤维材料网并进入捕获装置的机器的干燥部分移除纤维材料纤维网的装置和方法。干燥部分包括加热的干燥筒，引导辊和至少一个干燥丝，其布置成使得纤维材料纤维网至少主要由至少一个干燥丝引导通过加热的干燥筒和引导辊上的干燥部。该装置包括至少一个可控制的分离装置，其布置成至少减小纤维材料纤维网和至少一个干燥丝之间的粘附力。

9. 发明授权

US06475343B1 Process and device for dewatering a fibrous material web 失效
标题翻译：用于使纤维材料网脱水的方法和装置
公开(公告)号：US06475343B1
公开(公告)日：2002-11-05
申请号：US09696181
申请日：2000-10-26
申请人： Joachim Grabscheid , Karl Josef Böck , Ulrich Begemann , Thomas Elenz , Peter Mirsberger , Hans Dahl , Hannes Vomhoff , David Beck
发明人： Joachim Grabscheid , Karl Josef Böck , Ulrich Begemann , Thomas Elenz , Peter Mirsberger , Hans Dahl , Hannes Vomhoff , David Beck
IPC分类号： D21F152
CPC分类号： D21F1/48
摘要： Process and apparatus for dewatering a fibrous material web. The process includes guiding the fibrous material web through a dewatering zone, and directing a plurality of gas pressure pulses of a pressurized displacement gas one after the other onto a surface of the fibrous material web within the dewatering zone. The apparatus includes a device for forming a plurality of gas pressure pulses which are arranged one after the other within the dewatering zone. The plurality of gas pressure pulses are directed onto a surface of the fibrous material web.
摘要翻译：用于使纤维材料网脱水的方法和设备。该方法包括将纤维材料纤维网引导通过脱水区域，并将加压置换气体的多个气体压力脉冲一个接一个地引导到脱水区域内的纤维材料纤维网的表面上。该装置包括用于形成在脱水区内一个接一个布置的多个气体压力脉冲的装置。多个气体压力脉冲被引导到纤维材料纤维网的表面上。

10. 发明授权

US06413375B2 Paper machine 失效
标题翻译：造纸机
公开(公告)号：US06413375B2
公开(公告)日：2002-07-02
申请号：US09778077
申请日：2001-02-07
申请人： Karl Josef Böck , Gerhard Kotitschke , Johann Moser
发明人： Karl Josef Böck , Gerhard Kotitschke , Johann Moser
IPC分类号： D21F700
CPC分类号： D21F7/006
摘要： Machine for producing a web includes a former for sheet formation of the web, a press section for dewatering the web, a drying section for drying the web, and at least one edge strip forming device positioned in an area of at least one of the press section and the drying section, which is arranged to separate at least one edge strip from the web.
摘要翻译：用于生产网的机器包括用于纸幅成形的成型机，用于使纸幅脱水的压榨部分，用于干燥纸幅的干燥部分和至少一个位于至少一个压榨机的区域中的边缘条形成装置该部分和干燥部分被布置成将至少一个边缘条与幅材分开。

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