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1. 发明授权

US08845375B2 Disposable life-saving garment 有权
标题翻译：一次性救生服
公开(公告)号：US08845375B2
公开(公告)日：2014-09-30
申请号：US13386127
申请日：2010-07-01
申请人： Jong-Won Lee
发明人： Jong-Won Lee
IPC分类号： B63C9/08 , A41D13/002 , A62B17/00 , A41D13/01 , A41D31/00
CPC分类号： A62B17/003 , A41D13/0025 , A41D13/01 , A41D31/0027 , A41D2400/52
摘要： A disposable life-saving garment for use in the event of fire, comprises a body-protecting portion and a head-protecting portion. The body-protecting portion is configured with a lining formed to enclose the body of a wearer and a cover covering the liner, the cover being made of a sealed material that can block the passage of air. A closed air passage is formed between the liner and cover. A compressed air tank is installed in a pocket of the cover and is connected to the air passage through a check valve. An intake hose supplies compressed air from the air passage of the body-protecting portion to the head-protecting portion. The head-protecting portion has a heat-resistant transparent window and a one-way outlet unit. The body-protecting portion and the head-protecting portion are made of a nonflammable material or a fire retardant material.
摘要翻译：用于发生火灾的一次性救生衣包括身体保护部分和头部保护部分。身体保护部分构造有衬里，该衬里形成为围绕穿着者的身体和覆盖衬里的罩，该罩由可阻挡空气通过的密封材料制成。在衬套和盖子之间形成封闭的空气通道。压缩空气罐安装在盖的凹槽中，并通过止回阀连接到空气通道。进气软管将压缩空气从身体保护部分的空气通道提供到头部保护部分。头部保护部分具有耐热透明窗口和单向出口单元。身体保护部分和头部保护部分由不燃材料或阻燃材料制成。

2. 发明授权

US08735250B2 Methods of forming gates of semiconductor devices 有权
标题翻译：形成半导体器件栅极的方法
公开(公告)号：US08735250B2
公开(公告)日：2014-05-27
申请号：US13241957
申请日：2011-09-23
申请人： Jong-Won Lee , Bo-Un Yoon , Seung-Jae Lee
发明人： Jong-Won Lee , Bo-Un Yoon , Seung-Jae Lee
IPC分类号： H01L21/8234
CPC分类号： H01L21/28008 , H01L21/28105 , H01L21/823842 , H01L29/42376 , H01L29/49 , H01L29/513 , H01L29/66545
摘要： Methods of forming gates of semiconductor devices are provided. The methods may include forming a first recess in a first substrate region having a first conductivity type and forming a second recess in a second substrate region having a second conductivity type. The methods may also include forming a high-k layer in the first and second recesses. The methods may further include providing a first metal on the high-k layer in the first and second substrate regions, the first metal being provided within the second recess. The methods may additionally include removing at least portions of the first metal from the second recess while protecting materials within the first recess from removal. The methods may also include, after removing at least portions of the first metal from the second recess, providing a second metal within the second recess.
摘要翻译：提供了形成半导体器件的栅极的方法。所述方法可以包括在具有第一导电类型的第一衬底区域中形成第一凹槽，并在具有第二导电类型的第二衬底区域中形成第二凹部。所述方法还可以包括在第一和第二凹部中形成高k层。所述方法还可以包括在第一和第二衬底区域中的高k层上提供第一金属，第一金属设置在第二凹槽内。所述方法还可以包括从第二凹部移除第一金属的至少一部分，同时保护第一凹槽内的材料不被去除。所述方法还可以包括在从第二凹部去除第一金属的至少一部分之后，在第二凹部内提供第二金属。

3. 发明授权

US08357315B2 Cathode active material, cathode including the same and lithium battery including cathode 有权
标题翻译：阴极活性物质，包括其的阴极和包含阴极的锂电池
公开(公告)号：US08357315B2
公开(公告)日：2013-01-22
申请号：US12720159
申请日：2010-03-09
申请人： Jong-won Lee
发明人： Jong-won Lee
IPC分类号： H01B1/08 , H01M4/02
CPC分类号： H01M4/5825 , H01M4/136 , H01M6/16 , H01M10/0525 , H01M2300/0025
摘要： A cathode active material, a cathode including the cathode active material, and a lithium battery including the cathode. A lithium manganese phosphate cathode active material having an olivine structure represented by LixMn1-y-zM′yM″zPO4, where 0.6≦x≦1.0, 0
摘要翻译：阴极活性物质，包含正极活性物质的阴极和包含阴极的锂电池。一种具有由LixMn1-y-zM'yM“zPO4表示的橄榄石结构的磷酸锰锂正极活性物质，其中0.6＆nlE; x＆lt; 1.0; 1.0,0

4. 发明授权

US08346609B2 Method and software for displaying advertisements on a web page 有权
标题翻译：用于在网页上显示广告的方法和软件
公开(公告)号：US08346609B2
公开(公告)日：2013-01-01
申请号：US12332237
申请日：2008-12-10
申请人： Jong Won Lee , Zoo Il Yang , Eun Ja Byun
发明人： Jong Won Lee , Zoo Il Yang , Eun Ja Byun
IPC分类号： G06Q30/00 , G05B19/418
CPC分类号： G06Q30/02 , G06Q30/0247
摘要： Some embodiments disclosed herein are a method and a system for displaying an advertisement on a web page in which advertisement data displayed on the same web page from among different advertisement data can check mutual existence of the displayed advertisement data, thereby displaying another advertisement data different from the displayed advertisement data. The method for displaying another advertisement data includes recording and maintaining advertisement data including respective identification numbers in an advertisement database, loading the advertisement data from the advertisement database to a local computer memory of a user connected with a web page, identifying advertisement data having an identification number among the advertisement data loaded to the local computer memory, identifying predetermined option which may comprise predetermined display advertisement data from the advertisement database when the advertisement data having the identification number exists, and displaying the display advertisement data on the web page.
摘要翻译：本文公开的一些实施例是在网页上显示广告的方法和系统，其中在不同的广告数据之间在同一网页上显示的广告数据可以检查所显示的广告数据的相互存在，从而显示不同于所显示的广告数据。用于显示另一广告数据的方法包括在广告数据库中记录和维护包括相应标识号的广告数据，将广告数据从广告数据库加载到与网页连接的用户的本地计算机存储器，识别具有标识的广告数据在具有加载到本地计算机存储器的广告数据中，识别当具有标识号的广告数据存在时可以包括来自广告数据库的预定显示广告数据的预定选项，并且在网页上显示显示广告数据。

5. 发明授权

US08345472B2 Three-terminal ovonic threshold switch as a current driver in a phase change memory 有权
标题翻译：三端子超声门限开关作为相变存储器中的当前驱动器
公开(公告)号：US08345472B2
公开(公告)日：2013-01-01
申请号：US12974424
申请日：2010-12-21
申请人： Jong-Won Lee , Gianpaolo Spadini
发明人： Jong-Won Lee , Gianpaolo Spadini
IPC分类号： G11C11/00
CPC分类号： H01L45/1675 , G11C5/147 , G11C13/0004 , G11C13/0023 , G11C13/0026 , G11C13/0028 , G11C13/003 , G11C13/0069 , G11C2013/0092 , G11C2213/76 , H01L27/2436 , H01L45/00 , H01L45/04 , H01L45/1206 , H01L45/141
摘要： A three-terminal Ovonic Threshold Switch (OTS) is used to provide current to a Phase Change Memory Switch (PCMS) cross point array. The current is started by sending a small current into the second terminal of the three-terminal OTS allowing a larger current to flow from the first terminal to the third terminal of the three-terminal OTS. A method of making the three-terminal OTS is also presented.
摘要翻译：三端Ovonic阈值开关（OTS）用于向相变存储器开关（PCMS）交叉点阵列提供电流。通过向三端子OTS的第二端子发送小电流来开始电流，允许较大的电流从三端子OTS的第一端子流向第三端子。还提出了制作三端OTS的方法。

6. 发明申请

US20120088358A1 Methods of Forming Gates of Semiconductor Devices 有权
标题翻译：半导体器件门形成方法
公开(公告)号：US20120088358A1
公开(公告)日：2012-04-12
申请号：US13241957
申请日：2011-09-23
申请人： Jong-Won Lee , Bo-Un Yoon , Seung-Jae Lee
发明人： Jong-Won Lee , Bo-Un Yoon , Seung-Jae Lee
IPC分类号： H01L21/336
CPC分类号： H01L21/28008 , H01L21/28105 , H01L21/823842 , H01L29/42376 , H01L29/49 , H01L29/513 , H01L29/66545
摘要： Methods of forming gates of semiconductor devices are provided. The methods may include forming a first recess in a first substrate region having a first conductivity type and forming a second recess in a second substrate region having a second conductivity type. The methods may also include forming a high-k layer in the first and second recesses. The methods may further include providing a first metal on the high-k layer in the first and second substrate regions, the first metal being provided within the second recess. The methods may additionally include removing at least portions of the first metal from the second recess while protecting materials within the first recess from removal. The methods may also include, after removing at least portions of the first metal from the second recess, providing a second metal within the second recess.
摘要翻译：提供了形成半导体器件的栅极的方法。所述方法可以包括在具有第一导电类型的第一衬底区域中形成第一凹槽，并在具有第二导电类型的第二衬底区域中形成第二凹部。所述方法还可以包括在第一和第二凹部中形成高k层。所述方法还可以包括在第一和第二衬底区域中的高k层上提供第一金属，第一金属设置在第二凹槽内。所述方法还可以包括从第二凹部移除第一金属的至少一部分，同时保护第一凹槽内的材料不被去除。所述方法还可以包括在从第二凹部去除第一金属的至少一部分之后，在第二凹部内提供第二金属。

7. 发明申请

US20120052682A1 POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：抛光浆和使用其制造半导体器件的方法
公开(公告)号：US20120052682A1
公开(公告)日：2012-03-01
申请号：US13204862
申请日：2011-08-08
申请人： Sang-Kyun Kim , Jong-Won Lee , Eui-Hoon Jung , Bo-Un Yoon , Sang-Hyun Park , Seung-Jae Lee , Yun-Jeong Kim
发明人： Sang-Kyun Kim , Jong-Won Lee , Eui-Hoon Jung , Bo-Un Yoon , Sang-Hyun Park , Seung-Jae Lee , Yun-Jeong Kim
IPC分类号： H01L21/302 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： A polishing slurry for polishing an aluminum film includes an abrasive agent, an oxidizing agent, an anti-corrosion agent, and a removal rate reducing agent that is an anionic compound exhibiting a negative charge in the slurry. The polishing slurry can be used in a method of manufacturing a semiconductor device.
摘要翻译：用于抛光铝膜的抛光浆料包括研磨剂，氧化剂，防腐蚀剂和作为在浆料中显示负电荷的阴离子化合物的去除速率还原剂。抛光浆料可用于制造半导体器件的方法中。

8. 发明申请

US20120045707A1 ANODE SUPPORTED FLAT-TUBE SOFC AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译： ANODE支持的平板SOFC及其制造方法
公开(公告)号：US20120045707A1
公开(公告)日：2012-02-23
申请号：US13008370
申请日：2011-01-18
申请人： Rak-Hyun Song , Seung-Bok Lee , Seok-Joo Park , Tak-Hyung Lim , Jong-Won Lee , Dong-Ryul Shin , Seuk-Hoon Pi , Wan-Je Kim , Eun-Gu Kim
发明人： Rak-Hyun Song , Seung-Bok Lee , Seok-Joo Park , Tak-Hyung Lim , Jong-Won Lee , Dong-Ryul Shin , Seuk-Hoon Pi , Wan-Je Kim , Eun-Gu Kim
IPC分类号： H01M8/24 , H01M8/00
CPC分类号： H01M8/2404 , H01M8/006 , H01M8/0206 , H01M8/0217 , H01M8/0226 , H01M8/0232 , H01M8/0247 , H01M8/0258 , H01M8/1226 , H01M8/2425 , H01M8/243 , H01M2008/1293 , H01M2300/0071 , Y02P70/56
摘要： Disclosed is an anode supported flat-tube solid oxide fuel cell including: a stack including a plurality of unit cells layered therein, each of the unit cells having an anode support, wherein within the anode support, a flow path allowing a fuel gas to flow is formed, and on a surface of the anode support, an electrolyte, a cathode, and an interconnect layer are provided, wherein the interconnect layer positioned between the unit cells constituting the stack is formed by a paste obtained by mixing an electrical conductive material with glass, and on the interconnect layer formed by the paste, a metallic mesh for drawing out a current collection wire is disposed.
摘要翻译：公开了一种阳极支撑的扁管固体氧化物燃料电池，其包括：堆叠体，其中层叠有多个单元电池，每个单电池具有阳极支撑件，其中在阳极支撑件内，允许燃料气体流动的流路并且在阳极支撑体的表面上提供电解质，阴极和互连层，其中位于构成堆叠的单元电池之间的互连层由通过将导电材料与玻璃，并且在由糊料形成的互连层上设置用于拉出集电线的金属网。

9. 发明申请

US20120007018A1 SLURRY COMPOSITIONS FOR SELECTIVELY POLISHING SILICON NITRIDE RELATIVE TO SILICON OXIDE, METHODS OF POLISHING A SILICON NITRIDE LAYER AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：用于选择性地氧化硅氧化物的硅酸盐组合物，用于抛光氮化硅层的方法和使用其制造半导体器件的方法
公开(公告)号：US20120007018A1
公开(公告)日：2012-01-12
申请号：US13240271
申请日：2011-09-22
申请人： Jong-Won LEE , Sang-Yeob Han , Chang-Ki Hong , Jae-Dong Lee
发明人： Jong-Won LEE , Sang-Yeob Han , Chang-Ki Hong , Jae-Dong Lee
IPC分类号： C09K13/00 , B82Y30/00
CPC分类号： H01L21/31053 , C09G1/02 , H01L29/66583 , H01L29/66795 , H01L29/7851
摘要： Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water. The first agent includes poly(acrylic acid), The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process.
摘要翻译：提供了相对于氧化硅选择性研磨氮化硅的浆料组合物，研磨氮化硅层的方法和使用其制造半导体器件的方法。浆料组合物包括用于降低氧化物抛光速率的第一试剂，磨料颗粒和水。第一种试剂包括聚（丙烯酸）。在半导体制造过程中，浆料组合物可以具有相对于氧化硅的氮化硅的高抛光选择性，以选择性地研磨氮化硅层。

10. 发明授权

US08085614B2 Source control circuit and semiconductor memory device using the same 有权
标题翻译：源极控制电路和使用其的半导体存储器件
公开(公告)号：US08085614B2
公开(公告)日：2011-12-27
申请号：US12455784
申请日：2009-06-04
申请人： Jong Won Lee
发明人： Jong Won Lee
IPC分类号： G11C5/14
CPC分类号： G11C8/08 , G11C5/14 , G11C5/148 , G11C7/22 , G11C8/06 , G11C2207/2227
摘要： A source control circuit comprises a control signal generating unit for generating a standby signal which is enabled in a standby condition, and a switching unit connected between a power line for supplying power to an internal circuit and an external power and controlling the supply of the external power in response to the standby signal.
摘要翻译：源极控制电路包括用于产生待机状态下使能的待机信号的控制信号产生单元和连接在用于向内部电路供电的电力线和外部电力之间的开关单元，并且控制外部电源的供给电源响应待机信号。

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