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1. 发明申请

US20100227973A1 LOW VISCOSITY POLYAMIDES 审中-公开
标题翻译：低粘度聚氨酯
公开(公告)号：US20100227973A1
公开(公告)日：2010-09-09
申请号：US12718402
申请日：2010-03-05
申请人： John V. Facinelli , David Loy , Timothy Kraft , John Mattson
发明人： John V. Facinelli , David Loy , Timothy Kraft , John Mattson
IPC分类号： C08L77/00 , C08G69/02 , C08G69/14
CPC分类号： C08G69/02 , C08G69/00 , C08G69/10 , C08G69/14 , C08L77/00 , C08L77/02
摘要： A polyamide having a viscosity of between about 20 and about 40 FAV and a number average molecular weight of between about 9,000 and about 16,000 grams per mole is provided. The polyamide also includes un-terminated endgroups, where a difference between a concentration of carboxylic acid endgroups and a concentration of amine endgroups is about 5 meq/kg or less.
摘要翻译：提供粘度为约20至约40FAV和数均分子量为约9,000至约16,000克/摩尔的聚酰胺。聚酰胺还包括未端基的端基，其中羧酸端基浓度与胺端基浓度之差约为5meq / kg或更低。

2. 发明授权

US5856728A Power transformer circuit with resonator 失效
标题翻译：带谐振器的电力变压器电路
公开(公告)号：US5856728A
公开(公告)日：1999-01-05
申请号：US810308
申请日：1997-02-28
申请人： Charles L. Zimnicki , John Mattson
发明人： Charles L. Zimnicki , John Mattson
IPC分类号： H03H9/00 , H05B41/282 , H05B37/02
CPC分类号： H05B41/2827
摘要： A power transformer circuit (100) includes a capacitor (120) and a resonator (140). The resonator (140) is coupled in series with the capacitor (120) and is operable to provide a substantially inductive impedance between its terminals (142,144). Resonator (140) is preferably implemented as a piezoelectric lithium niobate resonator that is operated in a thickness-shear mode. In a preferred embodiment, power transformer circuit (100) is employed as a series resonant output circuit in an electronic ballast (500) for powering at least one gas discharge lamp (30).
摘要翻译：电力变压器电路（100）包括电容器（120）和谐振器（140）。谐振器（140）与电容器（120）串联耦合并且可操作以在其端子（142,144）之间提供基本上电感的阻抗。谐振器（140）优选地实现为以厚度 - 剪切模式操作的压电铌酸锂谐振器。在优选实施例中，在电子镇流器（500）中使用电力变压器电路（100）作为串联谐振输出电路，用于为至少一个气体放电灯（30）供电。

3. 外观设计

USD516221S1 Diagnostic instrument 失效
公开(公告)号：USD516221S1
公开(公告)日：2006-02-28
申请号：US29167119
申请日：2002-09-09
申请人： Jacob N. Wohlstadter , Eli N. Glezer , Charles Clinton , Brian A. Self , John Mattson , Lance Hussey , Nasahn Sheppard , Hirotomi Teranishi , Ravi Sawhney
设计人： Jacob N. Wohlstadter , Eli N. Glezer , Charles Clinton , Brian A. Self , John Mattson , Lance Hussey , Nasahn Sheppard , Hirotomi Teranishi , Ravi Sawhney

4. 发明授权

US06806523B2 Magnetoresistive memory devices 有权
标题翻译：磁阻存储器件
公开(公告)号：US06806523B2
公开(公告)日：2004-10-19
申请号：US10196484
申请日：2002-07-15
申请人： John Mattson
发明人： John Mattson
IPC分类号： H01L31119
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08 , Y10S257/903
摘要： The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.
摘要翻译：本发明包括具有导电芯的磁阻存储器件和至少部分地围绕导电芯延伸的第一磁性层。非磁性材料在第一磁性层的至少一部分之上，并且至少通过第一磁性层与导电芯分离。第二磁性层在非磁性材料之上，并且通过至少非磁性材料与第一磁性层分离。本发明还包括形成磁阻存储器件的方法。

5. 发明授权

US06780655B2 Methods of forming magnetoresistive memory devices 有权
标题翻译：形成磁阻存储器件的方法
公开(公告)号：US06780655B2
公开(公告)日：2004-08-24
申请号：US10632579
申请日：2003-07-31
申请人： John Mattson
发明人： John Mattson
IPC分类号： H01L2100
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08 , Y10S257/903
摘要： The invention includes a method of forming a magnetoresistive memory device. A trench is formed in an insulative material, and the trench is partially filled with a first magnetic material to narrow the trench. The narrowed trench is at least partially filled with a conductive material. A second magnetic material is formed over the conductive material. A non-magnetic layer is formed over the second magnetic material. A third magnetic material is formed over the non-magnetic layer. The conductive material and the first and second magnetic materials are incorporated into a sense portion of the magnetoresistive memory device. The third magnetic material is incorporated into a reference portion of the magnetoresistive memory device.
摘要翻译：本发明包括形成磁阻存储器件的方法。在绝缘材料中形成沟槽，并且沟槽部分地填充有第一磁性材料以使沟槽变窄。变窄的沟槽至少部分地填充有导电材料。第二磁性材料形成在导电材料上。在第二磁性材料上形成非磁性层。在非磁性层上形成第三磁性材料。导电材料和第一和第二磁性材料被结合到磁阻存储器件的感测部分中。第三磁性材料被结合到磁阻存储器件的参考部分中。

6. 发明授权

US06982450B2 Magnetoresistive memory devices 有权
标题翻译：磁阻存储器件
公开(公告)号：US06982450B2
公开(公告)日：2006-01-03
申请号：US10939248
申请日：2004-09-09
申请人： John Mattson
发明人： John Mattson
IPC分类号： H01L31/119
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08 , Y10S257/903
摘要： The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.
摘要翻译：本发明包括具有导电芯的磁阻存储器件和至少部分地围绕导电芯延伸的第一磁性层。非磁性材料在第一磁性层的至少一部分之上，并且至少通过第一磁性层与导电芯分离。第二磁性层在非磁性材料之上，并且通过至少非磁性材料与第一磁性层分离。本发明还包括形成磁阻存储器件的方法。

7. 发明申请

US20050029565A1 Magnetoresistive memory devices 有权
标题翻译：磁阻存储器件
公开(公告)号：US20050029565A1
公开(公告)日：2005-02-10
申请号：US10939248
申请日：2004-09-09
申请人： John Mattson
发明人： John Mattson
IPC分类号： G11C11/00 , G11C11/16 , H01L21/00 , H01L27/22 , H01L29/76 , H01L29/82 , H01L31/119 , H01L43/00 , H01L43/08
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08 , Y10S257/903
摘要： The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.
摘要翻译：本发明包括具有导电芯的磁阻存储器件和至少部分地围绕导电芯延伸的第一磁性层。非磁性材料在第一磁性层的至少一部分之上，并且至少通过第一磁性层与导电芯分离。第二磁性层在非磁性材料之上，并且通过至少非磁性材料与第一磁性层分离。本发明还包括形成磁阻存储器件的方法。

8. 发明申请

US20050029564A1 Methods of forming magnetoresistive memory devices 有权
公开(公告)号：US20050029564A1
公开(公告)日：2005-02-10
申请号：US10938667
申请日：2004-09-09
申请人： John Mattson
发明人： John Mattson
IPC分类号： G11C11/00 , G11C11/16 , H01L21/00 , H01L27/22 , H01L29/76 , H01L29/82 , H01L31/119 , H01L43/00 , H01L43/08
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08 , Y10S257/903
摘要： The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.

9. 发明授权

US5815054A Surface micromachined acoustic wave piezoelectric crystal with electrodes on raised ridges and in spaces therebetween 失效
标题翻译：表面微加工声波压电晶体，电极在凸脊上和其间的空间
公开(公告)号：US5815054A
公开(公告)日：1998-09-29
申请号：US863404
申请日：1997-05-27
申请人： Bruce Vojak , Jiashi Yang , Jin Huang , John Mattson
发明人： Bruce Vojak , Jiashi Yang , Jin Huang , John Mattson
IPC分类号： H03H9/19 , H03H9/02 , H03H9/205 , H03H9/56
CPC分类号： H03H9/02543
摘要： A high frequency acoustic wave piezoelectric device (10) having parallel etched channels cut into a surface of a piezoelectric substrate so as to form micromachined ridges (20). Top electrodes (30) are located on tops (26) of the ridges (20) and bottom electrodes (32) are located on bottoms of the channels in spacings (22) between ridges (20). The top and bottom electrodes (30, 32) are offset from each other and substantially non-opposing. The electrodes (30, 32) generate a sufficient vertical electrical field (38) when driven to cause the ridges (20) to resonate. A height (28) of the ridges (20) define the operating frequency. The ridges (20) can be made small enough to produce frequencies well over 100 MHz in a fundamental bulk acoustic wave mode.
摘要翻译：具有平行蚀刻通道的高频声波压电器件（10）切割成压电基片的表面以形成微加工脊（20）。顶部电极（30）位于脊部（20）的顶部（26）上，底部电极（32）位于脊部（20）之间的间隔（22）的通道的底部。顶部和底部电极（30,32）彼此偏移并且基本上不相对。当被驱动以使脊（20）谐振时，电极（30,32）产生足够的垂直电场（38）。脊（20）的高度（28）限定工作频率。脊（20）可以制成足够小以在基本体声波模式下产生超过100MHz的频率。

10. 发明授权

US06958246B2 Methods of forming magnetoresistive memory devices 有权
标题翻译：形成磁阻存储器件的方法
公开(公告)号：US06958246B2
公开(公告)日：2005-10-25
申请号：US10938667
申请日：2004-09-09
申请人： John Mattson
发明人： John Mattson
IPC分类号： G11C11/00 , G11C11/16 , H01L21/00 , H01L27/22 , H01L29/76 , H01L29/82 , H01L31/119 , H01L43/00 , H01L43/08
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08 , Y10S257/903
摘要： The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.
摘要翻译：本发明包括具有导电芯的磁阻存储器件和至少部分地围绕导电芯延伸的第一磁性层。非磁性材料在第一磁性层的至少一部分之上，并且至少通过第一磁性层与导电芯分离。第二磁性层在非磁性材料之上，并且通过至少非磁性材料与第一磁性层分离。本发明还包括形成磁阻存储器件的方法。

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