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    • 3. 发明授权
    • Position sensing photosensor device
    • 位置传感光电传感器
    • US5567976A
    • 1996-10-22
    • US433304
    • 1995-05-03
    • Eugene G. DierschkeJohn H. Berlien, Jr.
    • Eugene G. DierschkeJohn H. Berlien, Jr.
    • H01L27/144H01L31/02H01L31/00
    • H01L27/1443H01L31/02024
    • photosensor device (41) having tapered photodiodes (53, 55) that are interdigitated and which is compatible with typical ASIC, CMOS and BiCMOS processes. A left side photodiode array of tapered regions (53) of a first conductivity type is disposed into an epitaxial layer of a second conductivity type. This array of photodiodes is coupled together and further coupled to a first output terminal (43). A fight side photodiode array of tapered regions (55) of said first conductivity type is disposed into the epitaxial layer of the second conductivity type, spaced apart from the left side photodiode by a minimum distance. A second output terminal is coupled to the array of fight side photodiodes (51). An incident light spot (39) is focused onto the sensor. The amount of current generated at the first and second output terminals (43, 51) will be proportional to the area of the left photodiode array and the area of the fight photodiode array which is receiving light. By comparing the current generated at the first and second output terminals, the position of the incident light spot can be accurately measured as a percentage of the total width of the sensor. The photosensor (41) may be used in many applications but is particularly well suited to autofocusing systems. Several embodiments are described which vary the size and number of photodiodes used. An integrated circuit (123) which incorporates the photosensor with the circuitry needed to output a digital position measurement is described.
    • 具有锥形光电二极管(53,55)的光传感器装置(41),它们是交错式的并且与典型的ASIC,CMOS和BiCMOS工艺兼容。 将第一导电类型的锥形区域(53)的左侧光电二极管阵列设置在第二导电类型的外延层中。 这个光电二极管阵列耦合在一起并进一步耦合到第一输出端(43)。 所述第一导电类型的锥形区域(55)的对置侧光电二极管阵列设置在与左侧光电二极管间隔开最小距离的第二导电类型的外延层中。 第二输出端子耦合到阵列的对侧光电二极管(51)。 入射光点(39)聚焦在传感器上。 在第一和第二输出端子(43,41)处产生的电流量将与左光电二极管阵列的面积和正在接收光的打光光二极管阵列的面积成比例。 通过比较在第一和第二输出端产生的电流,入射光点的位置可以精确地测量为传感器的总宽度的百分比。 光传感器(41)可以用于许多应用中,但是特别适合于自动对焦系统。 描述了改变所使用的光电二极管的尺寸和数量的几个实施例。 描述了将光传感器与输出数字位置测量所需的电路结合的集成电路(123)。
    • 7. 发明授权
    • Monolithic light-to-digital signal converter
    • 单片光数字信号转换器
    • US5850195A
    • 1998-12-15
    • US625611
    • 1996-03-29
    • John H. Berlien, Jr.Cecil J. AswellEugene G. DierschkeMehedi Hassan
    • John H. Berlien, Jr.Cecil J. AswellEugene G. DierschkeMehedi Hassan
    • H03M1/12H03M1/00G08C19/04
    • H03M1/129G01J1/46H03M1/60
    • A monolithic light-to-digital signal converter (1.10) includes a photodiode array (1.24) having a plurality of sections with each section producing a current signal in response to incident light, a current-to-digital signal converter circuit (1.28) for converting selected ones of the current signals to a digital signal, and a control circuit (1.26) for scaling the digital signal in response to user supplied programming signals. The control circuit (1.26) also responds to user supplied programming signals to supply control signals to current-to-digital signal converter circuit (1.28). Current-to-digital signal converter circuit (1.28) is responsive to the control signals for combining selected ones of the current signals into a composite current signal and converting the composite current signal to a digital signal.
    • 单片光数字信号转换器(1.10)包括具有多个部分的光电二极管阵列(1.24),每个部分响应于入射光而产生电流信号;电流 - 数字信号转换器电路(1.28),用于 将所选择的当前信号转换为数字信号,以及用于响应于用户提供的编程信号对数字信号进行缩放的控制电路(1.26)。 控制电路(1.26)还响应用户提供的编程信号,将控制信号提供给电流 - 数字信号转换器电路(1.28)。 电流 - 数字信号转换器电路(1.28)响应于用于将选定电流信号组合成复合电流信号的控制信号,并将复合电流信号转换为数字信号。
    • 8. 发明授权
    • Method of making position sensing photosensor device
    • 制造位置传感光电传感器的方法
    • US5547879A
    • 1996-08-20
    • US554878
    • 1995-11-07
    • Eugene G. DierschkeJohn H. Berlien, Jr.
    • Eugene G. DierschkeJohn H. Berlien, Jr.
    • H01L27/144H01L31/02H01L31/18
    • H01L27/1443H01L31/02024
    • A photosensor device (41) having tapered photodiodes (53, 55) that are interdigitated and which is compatible with typical ASIC, CMOS and BiCMOS processes. A left side photodiode array of tapered regions (53) of a first conductivity type is disposed into an epitaxil layer of a second conductivity type. This array of photodiodes is coupled together and further coupled to a first output terminal (43). A right side photodiode array of tapered regions (55) of said first conductivity type is disposed into the epitaxial layer of the second conductivity type, spaced apart from the left side photodiode by a minimum distance. A second output terminal is coupled to the array of right side photodiodes (51). An incident light spot (39) is focused onto the sensor. The amount of current generated at the first and second output terminals (43, 51) will be proportional to the area of the left photodiode array and the area of the right photodiode array which is receiving light. By comparing the current generated at the first and second output terminals, the position of the incident light spot can be accurately measured as a percentage of the total width of the sensor. The photosensor (41) may be used in many applications but is particularly well suited to autofocusing systems. Several embodiments are described which vary the size and number of photodiodes used. An integrated circuit (123) which incorporates the photosensor with the circuitry needed to output a digital position measurement is described.
    • 具有交错指示并且与典型的ASIC,CMOS和BiCMOS工艺兼容的锥形光电二极管(53,55)的光电传感器装置(41)。 将第一导电类型的锥形区域(53)的左侧光电二极管阵列设置在第二导电类型的外延层中。 这个光电二极管阵列耦合在一起并进一步耦合到第一输出端(43)。 所述第一导电类型的锥形区域(55)的右侧光电二极管阵列被布置在与左侧光电二极管间隔开最小距离的第二导电类型的外延层中。 第二输出端子耦合到右侧光电二极管阵列51。 入射光点(39)聚焦在传感器上。 在第一和第二输出端子(43,41)处产生的电流量将与左光电二极管阵列的面积和正在接收光的右光电二极管阵列的面积成比例。 通过比较在第一和第二输出端产生的电流,入射光点的位置可以精确地测量为传感器的总宽度的百分比。 光传感器(41)可以用于许多应用中,但是特别适合于自动对焦系统。 描述了改变所使用的光电二极管的尺寸和数量的几个实施例。 描述了将光传感器与输出数字位置测量所需的电路结合的集成电路(123)。