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1. 发明授权

US06452413B1 Signal sensor for rf integrated systems 失效
标题翻译：用于rf集成系统的信号传感器
公开(公告)号：US06452413B1
公开(公告)日：2002-09-17
申请号：US09712323
申请日：2000-11-14
申请人： Joachim Norbert Burghartz
发明人： Joachim Norbert Burghartz
IPC分类号： G01R3126
CPC分类号： G01R15/148 , G01R21/01
摘要： A signal sensor is provided that includes a substrate, an input port formed on the substrate as a substantially linear conductive element, and a sensing port formed on the substrate adjacent to the input port. The sensing port is influenced by magnetic flux emanating from the input port such that a sense signal is generated in the sensing port. The sensing port can have as little as one sensing loop disposed on one side of the input port, but preferably includes at least one sensing loop on each side of the input port. The sensing loops on each side of the input port have an opposite sense of turn so that the sense signals in each loop are additive. A cross-over connector provides an electrical connection between the loops of the sensing port on opposite sides of the input port. The cross-over connector can be an underpass crossing below the input port or an overpass crossing above the input port. If desired, multiple sensing loops can be formed on each side of the input port. These sensing loops may be formed at the same fabrication level or may be formed on multiple fabrication levels. In the latter case, multi-level interconnects provide electrical connections between the sensing loops on each level.
摘要翻译：提供了一种信号传感器，其包括基板，形成在基板上的输入端口作为基本线性的导电元件，以及形成在基板上的与输入端口相邻的感测端口。感测端口受到从输入端口发出的磁通量的影响，使得在感测端口中产生感测信号。感测端口可以具有设置在输入端口的一侧上的至少一个感测回路，但是优选地在输入端口的每一侧包括至少一个感测回路。输入端口每侧的感应回路具有相反的转向，使得每个回路中的感测信号是相加的。交叉连接器在输入端口的相对侧上的感测端口的环路之间提供电连接。交叉连接器可以是输入端口下方的地下通道或输入端口上方的立交桥。如果需要，可以在输入端口的每一侧上形成多个感测回路。这些感测回路可以以相同的制造水平形成，或者可以在多个制造水平上形成。在后一种情况下，多级互连提供每层级感测环路之间的电气连接。

2. 发明授权

US6054329A Method of forming an integrated circuit spiral inductor with ferromagnetic liner 失效
标题翻译：用铁磁衬垫形成集成电路螺旋电感器的方法
公开(公告)号：US6054329A
公开(公告)日：2000-04-25
申请号：US949315
申请日：1997-10-14
申请人： Joachim Norbert Burghartz , Daniel Charles Edelstein , Christopher Vincent Jahnes , Cyprian Emeka Uzoh
发明人： Joachim Norbert Burghartz , Daniel Charles Edelstein , Christopher Vincent Jahnes , Cyprian Emeka Uzoh
IPC分类号： H01F17/00 , H01F17/06 , H01F27/28 , H01F30/16 , H01F41/04 , H01L23/522 , H01L21/00
CPC分类号： H01L23/5227 , H01F17/0006 , H01F17/0033 , H01F27/2804 , H01F27/2895 , H01F30/16 , H01F41/042 , H01F41/046 , H01F17/06 , H01L2924/0002 , Y10T29/4902
摘要： High quality factor (Q) spiral and toroidal inductor and transformer are disclosed that are compatible with silicon very large scale integration (VLSI) processing, consume a small IC area, and operate at high frequencies. The spiral inductor has a spiral metal coil deposited in a trench formed in a dielectric layer over a substrate. The metal coil is enclosed in ferromagnetic liner and cap layers, and is connected to an underpass contact through a metal filled via in the dielectric layer. The spiral inductor also includes ferromagnetic cores lines surrounded by the metal spiral coil. A spiral transformer is formed by vertically stacking two spiral inductors, or placing them side-by-side over a ferromagnetic bridge formed below the metal coils and cores lines. The toroidal inductor includes a toroidal metal coil with a core having ferromagnetic strips. The toroidal metal coil is segmented into two coils each having a pair of ports to form a toroidal transformer.
摘要翻译：公开了与硅非常大规模集成（VLSI）处理兼容的高质量因子（Q）螺旋和环形电感器和变压器，消耗小的IC区域并在高频下操作。螺旋电感器具有沉积在形成在衬底上的电介质层中的沟槽中的螺旋金属线圈。金属线圈封装在铁磁衬垫和盖层中，并通过电介质层中的金属填充通孔连接到地下通道接触。螺旋电感器还包括由金属螺旋线圈包围的铁磁芯线。通过垂直堆叠两个螺旋电感器或将它们并排放置在形成在金属线圈和芯线下方的铁磁桥上，形成螺旋形变压器。环形电感器包括具有铁磁条的芯的环形金属线圈。环形金属线圈被分成两个线圈，每个线圈具有一对端口以形成环形变压器。

3. 发明授权

US06177806B1 Signal sensor for rf integrated systems 失效
标题翻译：用于rf集成系统的信号传感器
公开(公告)号：US06177806B1
公开(公告)日：2001-01-23
申请号：US08923049
申请日：1997-09-03
申请人： Joachim Norbert Burghartz
发明人： Joachim Norbert Burghartz
IPC分类号： G01R3126
CPC分类号： G01R15/148 , G01R21/01
摘要： A signal sensor is provided that includes a substrate, an input port formed on the substrate as a substantially linear conductive element, and a sensing port formed on the substrate adjacent to the input port. The sensing port is influenced by magnetic flux emanating from the input port such that a sense signal is generated in the sensing port. The sensing port can have as little as one sensing loop disposed on one side of the input port, but preferably includes at least one sensing loop on each side of the input port. The sensing loops on each side of the input port have an opposite sense of turn so that the sense signals in each loop are additive. A cross-over connector provides an electrical connection between the loops of the sensing port on opposite sides of the input port. The cross-over connector can be an underpass crossing below the input port or an overpass crossing above the input port. If desired, multiple sensing loops can be formed on each side of the input port. These sensing loops may be formed at the same fabrication level or may be formed on multiple fabrication levels. In the latter case, multi-level interconnects provide electrical connections between the sensing loops on each level.
摘要翻译：提供了一种信号传感器，其包括基板，形成在基板上的输入端口作为基本线性的导电元件，以及形成在基板上的与输入端口相邻的感测端口。感测端口受到从输入端口发出的磁通量的影响，使得在感测端口中产生感测信号。感测端口可以具有设置在输入端口的一侧上的至少一个感测回路，但是优选地在输入端口的每一侧包括至少一个感测回路。输入端口每侧的感应回路具有相反的转向，使得每个回路中的感测信号是相加的。交叉连接器在输入端口的相对侧上的感测端口的环路之间提供电连接。交叉连接器可以是输入端口下方的地下通道或输入端口上方的立交桥。如果需要，可以在输入端口的每一侧上形成多个感测回路。这些感测回路可以以相同的制造水平形成，或者可以在多个制造水平上形成。在后一种情况下，多级互连提供每层级感测环路之间的电气连接。

4. 发明授权

US5998292A Method for making three dimensional circuit integration 失效
标题翻译：三维电路集成方法
公开(公告)号：US5998292A
公开(公告)日：1999-12-07
申请号：US968402
申请日：1997-11-12
申请人： Charles Thomas Black , Joachim Norbert Burghartz , Sandip Tiwari , Jeffrey John Welser
发明人： Charles Thomas Black , Joachim Norbert Burghartz , Sandip Tiwari , Jeffrey John Welser
IPC分类号： H01L21/48 , H01L23/48 , H01L25/065 , H01L21/4763
CPC分类号： H01L27/14687 , H01L21/486 , H01L23/481 , H01L25/0657 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002
摘要： The present invention relates to a method for interconnecting, through high-density micro-post wiring, multiple semiconductor wafers with lengths of about a millimeter or below. Specifically, the method of the present invention comprises etching at least one hole, defined by walls, at least partly through a semiconducting material; forming a layer of electrically insulating material to cover said walls; and forming an electrically conductive material on said walls within the channel of the hole. Microelectronic devices containing the micro-post wiring of the present invention are also disclosed herein.
摘要翻译：本发明涉及一种通过高密度微柱布线互连多个长度约为毫米或更小的半导体晶片的方法。具体地说，本发明的方法包括至少部分地通过半导体材料蚀刻由壁限定的至少一个孔; 形成电绝缘材料层以覆盖所述壁; 以及在所述孔的通道内的所述壁上形成导电材料。本文还公开了包含本发明的微柱布线的微电子器件。

5. 发明授权

US5936299A Substrate contact for integrated spiral inductors 失效
标题翻译：集成螺旋电感器的基板接触
公开(公告)号：US5936299A
公开(公告)日：1999-08-10
申请号：US815655
申请日：1997-03-13
申请人： Joachim Norbert Burghartz , Keith Aelwyn Jenkins , Mehmet Soyuer
发明人： Joachim Norbert Burghartz , Keith Aelwyn Jenkins , Mehmet Soyuer
IPC分类号： H01L21/02 , H01L29/00 , H01L29/74 , H01L31/111
CPC分类号： H01L28/10
摘要： An inductor structure includes an inductor spiral coil formed on a substrate; and a substrate contact connected to the substrate and disposed within a predetermined distance to the inductor spiral coil to increase the quality-factor (Q) characteristics associated with the inductor structure, and also does not increase eddy currents in the substrate. The substrate contact provides for implementation of the inductor structure as a spiral inductor which is integrated on a silicon substrate. The substrate contact determines the energy potential substantially adjacent to the inductor for reducing the noise level. In an implementation of an inductor in an RF circuit, the substrate contact contributes to providing an increased Q.
摘要翻译：电感器结构包括形成在基板上的电感器螺旋线圈; 以及与衬底连接并且设置在与电感器螺旋线圈预定距离内的衬底触点，以增加与电感器结构相关联的质量因子（Q）特性，并且也不会增加衬底中的涡流。衬底触点提供了将电感结构实现为集成在硅衬底上的螺旋电感器。衬底接触确定基本上邻近电感器的能量电位以降低噪声电平。在RF电路中的电感器的实现中，衬底接触有助于提供增加的Q。

6. 发明授权

US5656849A Two-level spiral inductor structure having a high inductance to area ratio 失效
标题翻译：具有高电感面积比的两级螺旋电感器结构
公开(公告)号：US5656849A
公开(公告)日：1997-08-12
申请号：US594455
申请日：1996-01-31
申请人： Joachim Norbert Burghartz , Keith Aelwyn Jenkins , Saila Ponnapalli , Mehmet Soyuer
发明人： Joachim Norbert Burghartz , Keith Aelwyn Jenkins , Saila Ponnapalli , Mehmet Soyuer
IPC分类号： H01L23/522 , H01L29/00
CPC分类号： H01L23/5227 , H01L2924/0002
摘要： A high-Q monolithic inductor structure formed using conventional silicon technology and having a first complete lower inductor spiral formed on a substrate and a second complete upper formed on a insulating layer over the first inductor spiral. Central portions of the inductor spirals are connected through a via hole in the insulating layer. The inductor spirals are oriented such that the current flows in the first and second spirals are in the same direction.
摘要翻译：使用常规硅技术形成的高Q单片电感器结构，并且具有形成在衬底上的第一完整的较低电感器螺旋和形成在第一电感器螺旋上的绝缘层上的第二完整上部。电感器螺旋的中心部分通过绝缘层中的通孔连接。电感器螺旋被定向成使得电流在第一和第二螺旋中流动在相同的方向。

7. 发明授权

US5818099A MOS high frequency switch circuit using a variable well bias 失效
标题翻译： MOS高频开关电路使用可变阱偏置
公开(公告)号：US5818099A
公开(公告)日：1998-10-06
申请号：US724876
申请日：1996-10-03
申请人： Joachim Norbert Burghartz
发明人： Joachim Norbert Burghartz
IPC分类号： H01L29/10 , H03K17/687 , H01L29/00
CPC分类号： H01L29/1079 , H01L29/1087 , H03K17/6871 , H03K17/693 , H03K2217/0018 , Y10S257/901
摘要： An RF switch comprises a switching FET having gate and back gate terminals, an input port for receiving an RF signal, and an output port for providing substantially the RF signal during an ON state of the FET. Switching circuitry connects the back gate terminal of the FET to the input port during the ON state to reduce insertion loss during the ON state, and connects the back gate terminal to a point of reference potential during an OFF state of the FET to increase isolation during the OFF state. Preferably, the switching FET is a depletion mode silicon MOSFET capable of operating with low supply voltages. The switching circuitry preferably comprises a second FET for electrically connecting the back gate terminal and the input terminal (e.g., source) of the switching FET during the ON state, and a third FET for electrically connecting the back gate terminal of the switching FET to the point of reference potential during the OFF state.
摘要翻译： RF开关包括具有栅极和背栅极端子的开关FET，用于接收RF信号的输入端口和用于在FET的导通状态期间基本上提供RF信号的输出端口。开关电路在接通状态期间将FET的背栅极连接到输入端口，以在导通状态期间降低插入损耗，并且在FET的OFF状态期间将背栅极端子连接到参考电位点以增加隔离度 OFF状态。优选地，开关FET是能够以低电源电压工作的耗尽型硅MOSFET。开关电路优选地包括用于在导通状态期间电连接开关FET的背栅极端子和输入端子（例如，源极）的第二FET，以及用于将开关FET的背栅极电连接到开关FET的第三FET OFF状态下的参考点电位。

8. 发明授权

US5793272A Integrated circuit toroidal inductor 失效
标题翻译：集成电路环形电感
公开(公告)号：US5793272A
公开(公告)日：1998-08-11
申请号：US701922
申请日：1996-08-23
申请人： Joachim Norbert Burghartz , Daniel Charles Edelstein , Christopher Vincent Jahnes , Cyprian Emeka Uzoh
发明人： Joachim Norbert Burghartz , Daniel Charles Edelstein , Christopher Vincent Jahnes , Cyprian Emeka Uzoh
IPC分类号： H01F17/00 , H01F17/06 , H01F27/28 , H01F30/16 , H01F41/04 , H01L23/522 , H01F5/00 , H01F27/24
CPC分类号： H01L23/5227 , H01F17/0006 , H01F17/0033 , H01F27/2804 , H01F27/2895 , H01F30/16 , H01F41/042 , H01F41/046 , H01F17/06 , H01L2924/0002 , Y10T29/4902
摘要： High quality factor (Q) spiral and toroidal inductor and transformer are disclosed that are compatible with silicon very large scale integration (VLSI) processing, consume a small IC area, and operate at high frequencies. The spiral inductor has a spiral metal coil deposited in a trench formed in at dielectric layer over a substrate. The metal coil is enclosed in ferromagnetic liner and cap layers, and is connected to an underpass contact through a metal filled via in the dielectric layer. The spiral inductor also includes ferromagnetic cores lines surrounded by the metal spiral coil. A spiral transformer is formed by vertically stacking two spiral inductors, or placing them side-by-side over a ferromagnetic bridge formed below the metal coils and cores lines. The toroidal inductor includes a toroidal metal coil with a core having ferromagnetic strips. The toroidal metal coil is segmented into two coils each having a pair of ports to form a toroidal transformer.
摘要翻译：公开了与硅非常大规模集成（VLSI）处理兼容的高质量因子（Q）螺旋和环形电感器和变压器，消耗小的IC区域并在高频下操作。螺旋电感器具有沉积在衬底上的电介质层中形成的沟槽中的螺旋金属线圈。金属线圈封装在铁磁衬垫和盖层中，并通过电介质层中的金属填充通孔连接到地下通道接触。螺旋电感器还包括由金属螺旋线圈包围的铁磁芯线。通过垂直堆叠两个螺旋电感器或将它们并排放置在形成在金属线圈和芯线下方的铁磁桥上，形成螺旋形变压器。环形电感器包括具有铁磁条的芯的环形金属线圈。环形金属线圈被分成两个线圈，每个线圈具有一对端口以形成环形变压器。

9. 发明授权

US6114937A Integrated circuit spiral inductor 失效
标题翻译：集成电路螺旋电感
公开(公告)号：US6114937A
公开(公告)日：2000-09-05
申请号：US949316
申请日：1997-10-14
申请人： Joachim Norbert Burghartz , Daniel Charles Edelstein , Christopher Vincent Jahnes , Cyprian Emeka Uzoh
发明人： Joachim Norbert Burghartz , Daniel Charles Edelstein , Christopher Vincent Jahnes , Cyprian Emeka Uzoh
IPC分类号： H01F17/00 , H01F17/06 , H01F27/28 , H01F30/16 , H01F41/04 , H01L23/522 , H01F5/00
CPC分类号： H01L23/5227 , H01F17/0006 , H01F17/0033 , H01F27/2804 , H01F27/2895 , H01F30/16 , H01F41/042 , H01F41/046 , H01F17/06 , H01L2924/0002 , Y10T29/4902
摘要： High quality factor (Q) spiral and toroidal inductor and transformer are disclosed that are compatible with silicon very large scale integration (VLSI) processing, consume a small IC area, and operate at high frequencies. The spiral inductor has a spiral metal coil deposited in a trench formed in a dielectric layer over a substrate. The metal coil is enclosed in ferromagnetic liner and cap layers, and is connected to an underpass contact through a metal filled via in the dielectric layer. The spiral inductor also includes ferromagnetic cores lines surrounded by the metal spiral coil. A spiral transformer is formed by vertically stacking two spiral inductors, or placing them side-by-side over a ferromagnetic bridge formed below the metal coils and cores lines. The toroidal inductor includes a toroidal metal coil with a core having ferromagnetic strips. The toroidal metal coil is segmented into two coils each having a pair of ports to form a toroidal transformer.
摘要翻译：公开了与硅非常大规模集成（VLSI）处理兼容的高质量因子（Q）螺旋和环形电感器和变压器，消耗小的IC区域并在高频下操作。螺旋电感器具有沉积在形成在衬底上的电介质层中的沟槽中的螺旋金属线圈。金属线圈封装在铁磁衬垫和盖层中，并通过电介质层中的金属填充通孔连接到地下通道接触。螺旋电感器还包括由金属螺旋线圈包围的铁磁芯线。通过垂直堆叠两个螺旋电感器或将它们并排放置在形成在金属线圈和芯线下方的铁磁桥上，形成螺旋形变压器。环形电感器包括具有铁磁条的芯的环形金属线圈。环形金属线圈被分成两个线圈，每个线圈具有一对端口以形成环形变压器。

10. 发明授权

US5994162A Integrated circuit-compatible photo detector device and fabrication process 失效
公开(公告)号：US5994162A
公开(公告)日：1999-11-30
申请号：US18942
申请日：1998-02-05
申请人： Joachim Norbert Burghartz , Mark B Ritter , Uli Klepser
发明人： Joachim Norbert Burghartz , Mark B Ritter , Uli Klepser
IPC分类号： H01L31/11 , H01L31/18 , H01L21/265 , H01L21/00
CPC分类号： H01L31/1105 , H01L31/18
摘要： An integrated circuit-compatible photo detector is disclosed which is particularly compatible with BiCMOS fabrication processes. In a first aspect, the photo detector is formed as a lateral phototransistor having a semiconductor substrate, a base structure formed as a first impurity region in the substrate, an emitter structure formed as a second impurity region in the first impurity region, and a collector structure formed by the substrate and by a pair of third and fourth impurity regions in the substrate on opposite sides of the first and second impurity regions. An emitter contact is electrically connected to the second impurity region, while a pair of collector contacts are electrically connected to the third and fourth impurity regions and to each other. An anti-reflective coating is applied to at least the base structure. Advantageously, if a photodiode is required instead of a phototransistor, the second impurity region can be formed with the same polarity as the first impurity region, in which case the first and second impurity regions form a cathode (or anode) and the third and fourth impurity regions form an anode (or cathode). In a second aspect, the photo detector is formed as a lateral phototransistor having a semiconductor substrate, a base structure formed by the substrate, an emitter structure formed as a first impurity region in the substrate, and a collector structure formed as a pair of second and third impurity regions in the substrate on opposite sides of the first impurity region. An emitter contact is electrically connected to the first impurity region, while a pair of collector contacts are electrically connected to the second and third impurity regions and to each other. An anti-reflective coating is applied to at least the base structure. Advantageously, if a photodiode is required instead of a phototransistor, the first impurity region can be formed with the same polarity as the substrate, in which case the substrate and the first impurity region form an anode (or cathode) and the second and third impurity regions form a cathode (or anode).

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