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    • 5. 发明申请
    • FOCAL PLANE SHUTTER AND CAMERA HAVING THE SAME
    • 具有相同功能的FOCAL PLANE SHUTTER和CAMERA
    • US20110150457A1
    • 2011-06-23
    • US12969227
    • 2010-12-15
    • Hae-In CHUNGJin-Won Lee
    • Hae-In CHUNGJin-Won Lee
    • G03B9/32
    • G03B9/32
    • A focal plane shutter having a front film and a back film which expose a charge-coupled device to light as they move back and forth between a cover plate and a base plate, between a charging position and a discharging position at a certain time interval. The focal plane shutter includes at least one lever member which is connected to the front film and/or back film, and which amplifies an impact force generated during a charging and a discharging movement of the front film and/or back film using a lever action. An elevating member slides in a direction parallel with the movement of the front film and/or back film by the impact force amplified in the lever member. An impact absorbing unit regulates the sliding movement of the elevating member to absorb impact energy generated by the movement and stop of the front film and/or back film.
    • 具有前膜和背膜的焦平面快门,当电荷耦合器件在盖板和基板之间来回移动时,以一定的时间间隔在充电位置和放电位置之间曝光。 焦平面快门包括至少一个杠杆构件,其连接到前膜和/或后膜,并且利用杠杆动作放大在前膜和/或后膜的充电和排出运动期间产生的冲击力 。 升降构件通过在杆构件中放大的冲击力沿与前膜和/或后膜的移动平行的方向滑动。 冲击吸收单元调节升降构件的滑动运动,以吸收由前膜和/或后膜的运动和停止产生的冲击能。
    • 7. 发明授权
    • Semiconductor device and method of fabricating the same
    • 半导体装置及其制造方法
    • US07833902B2
    • 2010-11-16
    • US11903575
    • 2007-09-24
    • Jin-won Lee
    • Jin-won Lee
    • H01L23/52H01L21/4763
    • H01L27/10888H01L27/10814H01L27/10855H01L27/10885
    • In a semiconductor device and a method of fabricating the same, the semiconductor device includes a contact pad in a first interlayer insulating layer on a semiconductor substrate, a contact hole in a second interlayer insulating layer on the first interlayer insulating layer, selectively exposing the contact pad, a contact spacer on internal walls of the contact hole, a first contact plug connected to the contact pad exposed by the contact hole having the contact spacer on the internal walls thereof, the first contact plug partially filling the contact hole, a metal silicide layer on a surface of the first contact plug, and a second contact plug on the metal silicide layer and partially filling the remaining portion of the contact hole.
    • 在半导体器件及其制造方法中,半导体器件包括在半导体衬底上的第一层间绝缘层中的接触焊盘,在第一层间绝缘层上的第二层间绝缘层中的接触孔,选择性地暴露接触 焊盘,接触孔的内壁上的接触间隔件,连接到接触垫的第一接触插塞,该接触焊盘由其内壁上具有接触间隔件的接触孔暴露,第一接触插塞部分地填充接触孔,金属硅化物 第一接触插塞的表面上的第二接触插塞和金属硅化物层上的第二接触插塞,并部分地填充接触孔的剩余部分。