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    • 2. 发明申请
    • LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR
    • 具有分布式BRAGG反射器的发光二极管
    • US20120025244A1
    • 2012-02-02
    • US13100879
    • 2011-05-04
    • Duk Il SUHJae Moo KIMKyoung Wan KIMYeo Jin YOONYe Seul KIMSang Hyun OHJin Woong LEE
    • Duk Il SUHJae Moo KIMKyoung Wan KIMYeo Jin YOONYe Seul KIMSang Hyun OHJin Woong LEE
    • H01L33/58
    • H01L33/46H01L33/10H01L33/38H01L33/42H01L33/50H01L2224/48091H01L2224/48247H01L2224/48257H01L2224/73265H01L2924/181H01L2924/00012H01L2924/00014
    • Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. The first distributed Bragg reflector has a laminate structure having an alternately stacked SiO2 layer and Nb2O5 layer.
    • 本发明的示例性实施例提供了具有分布式布拉格反射器的发光二极管。 根据示例性实施例的发光二极管(LED)包括布置在基板的第一表面上的发光结构,所述发光结构包括第一导电类型半导体层,第二导电类型半导体层, 以及插入在第一导电型半导体层和第二导电型半导体层之间的有源层。 第一分布式布拉格反射器布置在基板的与第一表面相对的第二表面上,第一分布布拉格反射器用于反射从发光结构发射的光。 第一分布布拉格反射器相对于蓝色波长范围内的第一波长的光,绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90%的反射率。 第一分布布拉格反射器具有层叠结构,其具有交替层叠的SiO 2层和Nb 2 O 5层。
    • 8. 发明授权
    • Light emitting diode having distributed Bragg reflector
    • 具有分布式布拉格反射器的发光二极管
    • US08373188B2
    • 2013-02-12
    • US13100879
    • 2011-05-04
    • Duk Il SuhJae Moo KimKyoung Wan KimYeo Jin YoonYe Seul KimSang Hyun OhJin Woong Lee
    • Duk Il SuhJae Moo KimKyoung Wan KimYeo Jin YoonYe Seul KimSang Hyun OhJin Woong Lee
    • H01L33/00
    • H01L33/46H01L33/10H01L33/38H01L33/42H01L33/50H01L2224/48091H01L2224/48247H01L2224/48257H01L2224/73265H01L2924/181H01L2924/00012H01L2924/00014
    • Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. The first distributed Bragg reflector has a laminate structure having an alternately stacked SiO2 layer and Nb2O5 layer.
    • 本发明的示例性实施例提供了具有分布式布拉格反射器的发光二极管。 根据示例性实施例的发光二极管(LED)包括布置在基板的第一表面上的发光结构,所述发光结构包括第一导电类型半导体层,第二导电类型半导体层, 以及插入在第一导电型半导体层和第二导电型半导体层之间的有源层。 第一分布式布拉格反射器布置在基板的与第一表面相对的第二表面上,第一分布布拉格反射器用于反射从发光结构发射的光。 第一分布布拉格反射器相对于蓝色波长范围内的第一波长的光,绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90%的反射率。 第一分布布拉格反射器具有层叠结构,其具有交替层叠的SiO 2层和Nb 2 O 5层。