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    • 6. 发明授权
    • Flash memory
    • 闪存
    • US08184464B2
    • 2012-05-22
    • US12780109
    • 2010-05-14
    • Kuei-Wu ChuJimmy LiangLeo Lu
    • Kuei-Wu ChuJimmy LiangLeo Lu
    • G11C5/06
    • H01L23/48H01L24/06H01L25/0657H01L25/18H01L2225/06513H01L2225/06527H01L2924/01033H01L2924/01082H01L2924/014
    • A flash memory includes a controller unit and dies. The dies are connected to a controller unit. Each of the dies includes an upper face and a lower face. Each of the dies includes at least one power supply pad, at least one grounding pad, at least one input/output pad, selection pads and standby/busy pads on each of the upper and lower faces. The power supply pad is connected to the controller unit. The grounding pad is connected to the power supply pad in parallel. The input/output pad is connected to the grounding pad in parallel. The selection pads are connected to the controller unit and connected to one another with a wire that can be cut if so desired. The standby/busy pads are connected to the controller unit and connected to one another with a wire that can be cut if so desired.
    • 闪存包括控制器单元和管芯。 模具连接到控制器单元。 每个模具包括上表面和下表面。 每个管芯包括至少一个电源焊盘,至少一个接地焊盘,至少一个输入/输出焊盘,选择焊盘和在上表面和下表面中的每一个上的备用/忙碌焊盘。 电源板连接到控制器单元。 接地垫并联连接到电源板。 输入/输出焊盘并联连接到接地焊盘。 选择焊盘连接到控制器单元并且用如果需要切割的导线彼此连接。 备用/繁忙焊盘连接到控制器单元,并使用可以切割的电线相互连接,如果需要的话。
    • 10. 发明申请
    • Chip for Reliable Stacking on another Chip
    • 芯片可靠堆叠在另一个芯片上
    • US20110062586A1
    • 2011-03-17
    • US12814458
    • 2010-06-13
    • Leo LuKuei-Wu ChuJimmy Liang
    • Leo LuKuei-Wu ChuJimmy Liang
    • H01L23/538
    • H01L23/481H01L21/76898H01L24/13H01L24/16H01L2224/16H01L2924/01079H01L2924/14H01L2924/00
    • A chip includes a device, a passivation layer, two dielectric layers, at least one upper redistribution layer, at least one lower redistribution layer, at least one tunnel, at least one conductor, a redistribution passivation layer and at least one solder ball. The device includes at least one pad. The tunnel is defined in the upper redistribution layer, the first dielectric layer, the passivation layer, the pad, the device, the chip, the second dielectric layer and the lower redistribution layer. The conductor is located in the tunnel and connected to the upper and lower redistribution layers. The redistribution passivation layer is located on the second dielectric layer, the lower redistribution layer and the conductor. The solder ball is located on a portion of the lower redistribution layer through an aperture defined in the redistribution passivation layer. The chip can be connected to a printed circuit board by the solder ball.
    • 芯片包括器件,钝化层,两个电介质层,至少一个上再分配层,至少一个下再分配层,至少一个隧道,至少一个导体,再分布钝化层和至少一个焊球。 该装置包括至少一个垫。 隧道定义在上再分配层,第一介电层,钝化层,焊盘,器件,芯片,第二介电层和下再分布层中。 导体位于隧道内并与上,下重分布层连接。 再分布钝化层位于第二介电层,下再分布层和导体上。 焊球通过限定在再分布钝化层中的孔位于下再分布层的一部分上。 芯片可以通过焊球连接到印刷电路板。