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    • 1. 发明授权
    • Method of electro-depositing a conductive material in at least one through-hole via of a semiconductor substrate
    • 在半导体衬底的至少一个通孔通孔中电沉积导电材料的方法
    • US07850836B2
    • 2010-12-14
    • US11595627
    • 2006-11-09
    • Pradeep DixitJianmin Miao
    • Pradeep DixitJianmin Miao
    • C25D5/00C25D21/12C25D5/18C25D5/02H01L21/288
    • H01L21/2885C25D5/18C25D7/04C25D7/123C25D17/001H01L21/76898
    • An initial pulse current cycle is supplied to at least one through-hole via. The pulse current cycle includes a forward pulse current. The magnitude of the forward pulse current is lower than the magnitude of the reverse pulse current. A corresponding forward and reverse current density is generated across the via causing conductive material to be deposited within the via, thereby reducing the effective aspect ratio of the via. At least one subsequent pulse current cycle is supplied. The magnitudes of the forward and reverse pulse currents of the subsequent pulse current cycle are determined in relation to the reduced effective aspect ratio. A subsequent corresponding forward and reverse current density is generated across the through-hole via causing conductive material to be deposited within the via, thereby further reducing the effective aspect ratio of the via.
    • 初始脉冲电流循环被提供给至少一个通孔通孔。 脉冲电流周期包括正向脉冲电流。 正向脉冲电流的幅度小于反向脉冲电流的幅度。 在整个通孔上产生相应的正向和反向电流密度,导致导电材料沉积在通孔内,从而降低通孔的有效纵横比。 提供至少一个后续脉冲电流循环。 随后的脉冲电流周期的正向和反向脉冲电流的幅度相对于减小的有效宽高比来确定。 随后通过使导电材料沉积在通孔中,跨越通孔产生相应的正向和反向电流密度,从而进一步降低了通孔的有效纵横比。
    • 3. 发明申请
    • Method of electro-depositing a conductive material in at least one through-hole via of a semiconductor substrate
    • 在半导体衬底的至少一个通孔通孔中电沉积导电材料的方法
    • US20070202686A1
    • 2007-08-30
    • US11595627
    • 2006-11-09
    • Pradeep DixitJianmin Miao
    • Pradeep DixitJianmin Miao
    • H03K3/017
    • H01L21/2885C25D5/18C25D7/04C25D7/123C25D17/001H01L21/76898
    • A method of electro-depositing a conductive material in at least one through-hole via of a semiconductor substrate, said through-hole via having an effective aspect ratio, said method including supplying an initial pulse current cycle to the via, said pulse current cycle including a forward pulse current, and a reverse pulse current, wherein the forward pulse current and the reverse pulse current are each of a predetermined distinct magnitude and are each supplied over a predetermined distinct period, wherein the magnitude of the forward pulse current is lower than the magnitude of the reverse pulse current, such that a corresponding forward and reverse current density is generated across the via causing conductive material to be deposited within the via, thereby reducing the effective aspect ratio of said via; and supplying at least one subsequent pulse current cycle wherein the magnitude of the forward and reverse pulse currents of the subsequent pulse current cycle are determined in relation to the reduced effective aspect ratio resulting from a previous pulse current cycle, such that a subsequent corresponding forward and reverse current density is generated across the through-hole via causing conductive material to be deposited within the via, thereby further reducing the effective aspect ratio of said via with each subsequent pulse current cycle until the through-hole via is completely filled with conductive material.
    • 一种在半导体衬底的至少一个通孔通孔中电沉积导电材料的方法,所述通孔通孔具有有效的纵横比,所述方法包括向通孔提供初始脉冲电流循环,所述脉冲电流循环 包括正向脉冲电流和反向脉冲电流,其中正向脉冲电流和反向脉冲电流各自具有预定的不同幅度,并且分别被提供在预定的不同周期,其中正向脉冲电流的幅度低于 反向脉冲电流的大小,使得跨过通孔产生相应的正向和反向电流密度,导致导电材料沉积在通孔内,从而降低所述通孔的有效纵横比; 并提供至少一个随后的脉冲电流循环,其中随后脉冲电流周期的正向和反向脉冲电流的大小相对于由先前脉冲电流周期产生的减小的有效宽高比来确定,使得随后的相应的前进和 通过使通孔中的导电材料沉积在通孔内而产生反向电流密度,从而进一步减少所述通孔与每个随后的脉冲电流循环的有效纵横比直到通孔通孔完全填充有导电材料。