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1. 发明授权

US07902066B2 Damascene contact structure for integrated circuits 有权
标题翻译：集成电路的镶嵌接触结构
公开(公告)号：US07902066B2
公开(公告)日：2011-03-08
申请号：US11535069
申请日：2006-09-26
申请人： Jian Hui Ye , Mei Sheng Zhou
发明人： Jian Hui Ye , Mei Sheng Zhou
IPC分类号： H01L21/4763
CPC分类号： H01L21/76808 , H01L21/31144 , H01L21/76846 , H01L21/76895 , H01L21/76897 , H01L23/485 , H01L23/53238
摘要： Interconnects for integrated circuits, such as damascene structures are formed using a hard mask. The hard mask is formed from, for example, high-k dielectric material such as hafnium oxide or other materials having high etch selectivity to the interconnect dielectric material. This enables a thin mask to etch vias and trenches in the interconnect dielectric layer, avoiding the problems associated with the use of thick mask layers, such as contact hole striations and small depth of focus, which can result in shorts or opens.
摘要翻译：集成电路的互连（如镶嵌结构）使用硬掩模形成。硬掩模由例如高k电介质材料形成，例如氧化铪或对互连电介质材料具有高蚀刻选择性的其它材料。这使得薄掩模能够蚀刻互连电介质层中的通孔和沟槽，从而避免与使用厚掩模层（例如接触孔条纹和小焦点深度）相关联的问题，这可能导致短路或打开。

2. 发明授权

US06057240A Aqueous surfactant solution method for stripping metal plasma etch deposited oxidized metal impregnated polymer residue layers from patterned metal layers 失效
标题翻译：用于从图案化金属层剥离金属等离子体蚀刻沉积的氧化金属浸渍的聚合物残余物层的水性表面活性剂溶液方法
公开(公告)号：US06057240A
公开(公告)日：2000-05-02
申请号：US55437
申请日：1998-04-06
申请人： Mei-Sheng Zhou , Jian-Hui Ye , Simon Chooi , Young-Tong Tsai
发明人： Mei-Sheng Zhou , Jian-Hui Ye , Simon Chooi , Young-Tong Tsai
IPC分类号： C11D1/04 , C11D1/68 , C11D1/70 , C11D3/30 , C11D11/00 , H01L21/02 , H01L21/311 , H01L21/3213 , H05K3/06 , H01R13/502 , C11D9/00
CPC分类号： H01L21/02071 , B82Y10/00 , B82Y30/00 , C11D11/0047 , C11D3/30 , H01L21/31138 , H01L21/32136 , H05K3/064 , C11D1/04 , H05K2203/0793 , H05K2203/095
摘要： A method for forming a patterned metal layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a blanket metal layer. There is then formed over the blanket metal layer a patterned photoresist layer. There is then etched through use of a plasma etch method while employing the patterned photoresist layer as a photoresist etch mask layer the blanket metal layer to form a patterned metal layer. The patterned metal layer so formed has a metal impregnated carbonaceous polymer residue layer formed upon a sidewall of the patterned metal layer. There is then stripped from the patterned metal layer the patterned photoresist layer through use of an oxygen containing plasma while simultaneously oxidizing the metal impregnated carbonaceous polymer residue layer to form an oxidized metal impregnated polymer residue layer upon the sidewall of the patterned metal layer. There is then stripped from the sidewall of the patterned metal layer the oxidized metal impregnated polymer residue layer while employing an aqueous alkyl ammonium hydroxide based solution. The aqueous alkyl ammonium hydroxide based solution has incorporated therein a surfactant capable of forming a monolayer adsorbed upon the sidewall of the patterned metal layer.
摘要翻译：一种用于在微电子制造中形成图案化金属层的方法。首先提供了在微电子制造中使用的衬底。然后在衬底上形成覆盖金属层。然后在覆盖金属层上形成图案化的光致抗蚀剂层。然后通过使用等离子体蚀刻方法蚀刻，同时使用图案化的光致抗蚀剂层作为光刻胶蚀刻掩模层，覆盖金属层以形成图案化的金属层。如此形成的图案化金属层具有形成在图案化金属层的侧壁上的金属浸渍碳质聚合物残余层。然后通过使用含氧等离子体从图案化的金属层剥离图案化的光刻胶层，同时对金属浸渍的碳质聚合物残余层进行氧化，以在图案化金属层的侧壁上形成氧化金属浸渍的聚合物残余物层。然后从图案化金属层的侧壁剥离氧化金属浸渍的聚合物残余物层，同时使用基于烷基氢氧化铵的水溶液。基于烷基氢氧化铵的水溶液溶液中加入了能够形成单层吸附在图案化金属层的侧壁上的表面活性剂。

3. 发明授权

US6009888A Photoresist and polymer removal by UV laser aqueous oxidant 失效
标题翻译： UV激光水性氧化剂除去光致抗蚀剂和聚合物
公开(公告)号：US6009888A
公开(公告)日：2000-01-04
申请号：US73946
申请日：1998-05-07
申请人： Jian-Hui Ye , Yuan-Ping Lee , Mei-Sheng Zhou , Yong-Feng Lu
发明人： Jian-Hui Ye , Yuan-Ping Lee , Mei-Sheng Zhou , Yong-Feng Lu
IPC分类号： B08B7/00 , G03F7/42 , H01L21/311 , B08B7/04
CPC分类号： H01L21/31127 , B08B7/0042 , G03F7/423 , H01L21/31133
摘要： A method of stripping photoresist and polymer from a wafer after a dry etch of a nitrade or a polysilicon layer that immerses the wafer in a peroxydisulfate (S.sub.2 O.sub.8.sup.2-)/HCl wet bath and while the wafer is still immersed, irradiates the wafer with a UV laser. The method comprises: (a) forming an silicon nitride layer 24 and a photoresist pattern 28 over a semi conductor structure 10; (b) dry etching the silicon nitride layer 24 thus forming a polymer 30 over the photoresist pattern, and the silicon nitride layer, (c) Immersing the substrate, the photoresist pattern, the polymer 30 in a liquid bath 34 comprising (1) peroxydisulfate (S.sub.2 O.sub.8.sup.2-), (2) HCl, and (3) water; and irradiating the photoresist pattern 28 and polymer layer 30 with a UV laser thereby removing the photoresist 28 and polymer 30.
摘要翻译：在将晶片浸入过氧二硫酸盐（S2O82-）/ HCl湿浴中并在晶片仍然浸没之后的氮化或多晶硅层的干蚀刻之后，从晶片剥离光致抗蚀剂和聚合物的方法，激光。该方法包括：（a）在半导体结构10上形成氮化硅层24和光致抗蚀剂图案28; （b）干蚀刻氮化硅层24，从而在光致抗蚀剂图案和氮化硅层上形成聚合物30，（c）将基底，光致抗蚀剂图案，聚合物30浸入液浴34中，该液槽34包括（1）过氧化二硫酸（S2O82-），（2）HCl和（3）水; 并用UV激光照射光致抗蚀剂图案28和聚合物层30，从而除去光致抗蚀剂28和聚合物30。

4. 发明授权

US6004722A Hydrolytically stable organic polymer material for organic polymer anti-reflective (ARC) layer 失效
标题翻译：用于有机聚合物抗反射（ARC）层的水解稳定的有机聚合物材料
公开(公告)号：US6004722A
公开(公告)日：1999-12-21
申请号：US55440
申请日：1998-04-06
申请人： Ai-Qiang Zhang , Jian-Hui Ye
发明人： Ai-Qiang Zhang , Jian-Hui Ye
IPC分类号： G03F7/09 , G03C1/492
CPC分类号： G03F7/091
摘要： A method for forming an anti-reflective coating (ARC) layer within a fabrication and a fabrication having the anti-reflective coating (ARC) layer formed therein. To practice the method, there is first provided a substrate. There is then formed over the substrate a reflective layer. There is then formed upon the reflective layer an organic polymer anti-reflective coating (ARC) layer, where the organic polymer anti-reflective coating (ARC) layer is formed from an organic polymer anti-reflective coating (ARC) material which is not susceptible to a hydrolysis reaction. There may then be formed upon the organic polymer anti-reflective coating (ARC) layer a photoresist layer which is photoexposed and developed to form a patterned photoresist layer which may be employed as an etch mask for forming a patterned reflective layer from the reflective layer. The patterned reflective layer so formed is formed with uniform and reproducible linewidth dimension.
摘要翻译：在其中形成有抗反射涂层（ARC）层的制造和制造中形成抗反射涂层（ARC）层的方法。为了实践该方法，首先提供了一种衬底。然后在衬底上形成反射层。然后在反射层上形成有机聚合物抗反射涂层（ARC）层，其中有机聚合物抗反射涂层（ARC）层由不敏感的有机聚合物抗反射涂层（ARC）材料形成进行水解反应。然后可以在有机聚合物抗反射涂层（ARC）层上形成光致抗蚀剂层，光致抗蚀剂层被光曝光和显影以形成图案化的光致抗蚀剂层，其可以用作用于从反射层形成图案化反射层的蚀刻掩模。如此形成的图案化反射层形成均匀且可再现的线宽尺寸。

5. 发明申请

US20080076244A1 Damascene Contact Structure for Integrated Circuits 有权
标题翻译：集成电路的大马士革接触结构
公开(公告)号：US20080076244A1
公开(公告)日：2008-03-27
申请号：US11535069
申请日：2006-09-26
申请人： Jian Hui YE , Mei Sheng ZHOU
发明人： Jian Hui YE , Mei Sheng ZHOU
IPC分类号： H01L21/44
CPC分类号： H01L21/76808 , H01L21/31144 , H01L21/76846 , H01L21/76895 , H01L21/76897 , H01L23/485 , H01L23/53238
摘要： Interconnects for integrated circuits, such as damascene structures are formed using a hard mask. The hard mask is formed from, for example, high-k dielectric material such as hafnium oxide or other materials having high etch selectivity to the interconnect dielectric material. This enables a thin mask to etch vias and trenches in the interconnect dielectric layer, avoiding the problems associated with the use of thick mask layers, such as contact hole striations and small depth of focus, which can result in shorts or opens.
摘要翻译：集成电路的互连（如镶嵌结构）使用硬掩模形成。硬掩模由例如高k电介质材料形成，例如氧化铪或对互连电介质材料具有高蚀刻选择性的其它材料。这使得薄掩模能够蚀刻互连电介质层中的通孔和沟槽，从而避免与使用厚掩模层（例如接触孔条纹和小焦点深度）相关联的问题，这可能导致短路或打开。

6. 发明授权

US5801083A Use of polymer spacers for the fabrication of shallow trench isolation regions with rounded top corners 失效
标题翻译：使用聚合物间隔件制造具有圆角顶角的浅沟槽隔离区域
公开(公告)号：US5801083A
公开(公告)日：1998-09-01
申请号：US954046
申请日：1997-10-20
申请人： Bo Yu , Qing Hua Zhong , Jian Hui Ye , Mei Sheng Zhou
发明人： Bo Yu , Qing Hua Zhong , Jian Hui Ye , Mei Sheng Zhou
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76232 , Y10S148/05 , Y10S148/161 , Y10S438/978
摘要： A method for forming insulator filled, shallow trench isolation regions, with rounded corners, has been developed. The process features the use of a polymer coated opening, in an insulator layer, used as a mask to define the shallow trench region in silicon. After completion of the shallow trench formation the polymer spacers are removed, exposing a region of unetched semiconductor, that had been protected by the polymer spacers, during the shallow trench dry etching procedure. The sharp corner, at the intersection between the shallow trench and the unetched region of semiconductor, is then converted to a rounded corner, via thermal oxidation of exposed silicon surfaces. The polymer spacers also eliminate the top corner wraparound.
摘要翻译：已经开发了用于形成具有圆角的绝缘体填充的浅沟槽隔离区域的方法。该方法的特征在于在绝缘体层中使用聚合物涂布的开口，用作掩模以限定硅中的浅沟槽区域。在浅沟槽形成完成之后，去除聚合物间隔物，暴露在浅沟槽干法蚀刻过程中被聚合物间隔物保护的未蚀刻半导体区域。然后，通过暴露的硅表面的热氧化，在浅沟槽和半导体的未蚀刻区域之间的交叉点处的尖角被转换成圆角。聚合物间隔物也消除了顶角环绕。

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