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1. 发明申请

US20130187097A1 METHOD FOR PRODUCING GRAPHENE AT A LOW TEMPERATURE, METHOD FOR DIRECT TRANSFER OF GRAPHENE USING SAME, AND GRAPHENE SHEET 有权
标题翻译：在低温下生产石墨的方法，使用其直接转印石墨的方法和石墨片
公开(公告)号：US20130187097A1
公开(公告)日：2013-07-25
申请号：US13810144
申请日：2011-07-15
申请人： Byung Hee Hong , Jong-Hyun Ahn , Ji Beom Yoo , Su Kang Bae , Myung Hee Jung , Houk Jang , Youngbin Lee , Sang Jin Kim
发明人： Byung Hee Hong , Jong-Hyun Ahn , Ji Beom Yoo , Su Kang Bae , Myung Hee Jung , Houk Jang , Youngbin Lee , Sang Jin Kim
IPC分类号： C01B31/04 , C23C16/26
CPC分类号： C01B31/0453 , B82Y30/00 , B82Y40/00 , C01B32/186 , C23C16/01 , C23C16/26
摘要： The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500° C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).
摘要翻译：本发明涉及一种在低温下形成石墨烯的方法，涉及使用其形成石墨烯的直接转移方法和石墨烯片。在低温下形成石墨烯的方法包括向形成在基板上的石墨烯生长用金属催化剂层供给含碳源气体，并通过感应耦合的方式在500℃以下的低温下形成石墨烯等离子体化学气相沉积（ICP-CVD）。

2. 发明申请

US20110048524A1 THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：US20110048524A1
公开(公告)日：2011-03-03
申请号：US12692101
申请日：2010-01-22
申请人： Jung-Gyu NAM , Sang-Cheol PARK , Jin-Soo MUN , Yu-Hee KIM , Ji-Beom YOO
发明人： Jung-Gyu NAM , Sang-Cheol PARK , Jin-Soo MUN , Yu-Hee KIM , Ji-Beom YOO
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/035281 , H01L31/0322 , H01L31/0725 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A thin film solar cell, includes: a first electrode; a light absorption layer including a first light absorption layer including a group I element-group III element-group VI element compound, a second light absorption layer including a group I element-group III element-group VI element compound, and a third light absorption layer including a group I element-group III element-group VI element compound; and a second electrode, wherein the first light absorption layer has a band gap, which is less a band gap of the second light absorption layer, the band gap of the second light absorption layer is less than a band gap of the third light absorption layer, and the second light absorption layer has a band gap gradient, which increases in a direction from the first light absorption layer to the third light absorption layer.
摘要翻译：一种薄膜太阳能电池，包括：第一电极; 光吸收层，其包括第一元素族III族元素族VI族元素化合物的第一光吸收层，第一族元素族III族元素族VI族元素化合物的第二光吸收层和第三光吸收层包含I族元素族III族元素族VI族元素化合物的层; 以及第二电极，其中所述第一光吸收层具有小于所述第二光吸收层的带隙的带隙，所述第二光吸收层的带隙小于所述第三光吸收层的带隙并且第二光吸收层具有在从第一光吸收层到第三光吸收层的方向上增加的带隙梯度。

3. 发明申请

US20090110908A1 METHOD OF MANUFACTURING DISPERSION TYPE INORGANIC ELECTROLUMINESCENCE DEVICE AND DISPERSION TYPE INORGANIC ELECTROLUMINESCENCE DEVICE 审中-公开
标题翻译：分散型无机电致发光器件和分散型无机电致发光器件的制造方法
公开(公告)号：US20090110908A1
公开(公告)日：2009-04-30
申请号：US12114478
申请日：2008-05-02
申请人： Shang Hyeun PARK , Ji Beom YOO , Mun Ja KIM , Min Jong BAE , Tae Won JEONG
发明人： Shang Hyeun PARK , Ji Beom YOO , Mun Ja KIM , Min Jong BAE , Tae Won JEONG
IPC分类号： H05B33/14 , B32B5/16 , B05D5/12
CPC分类号： C09K11/025 , C03C17/36 , C03C17/3668 , C03C2217/42 , C09K11/615 , H05B33/10 , Y10T428/25
摘要： A method of manufacturing a dispersion type inorganic electroluminescence device and a dispersion type inorganic electroluminescence device including a light-emitting layer and a dielectric layer, which are integrated, are disclosed. The method is directed to the manufacture of a dispersion type inorganic electroluminescence device, in which phosphor particles are coated with a metal oxide precursor using ultrasonic waves, after which the phosphor particles coated with the metal oxide precursor are disposed between a transparent electrode and an upper electrode, forming a light-emitting layer and a dielectric layer, which are integrated. The dispersion type inorganic electroluminescence device includes a plurality of phosphor particles coated with a metal oxide precursor, disposed between a transparent electrode and an upper electrode, thereby providing a light-emitting layer and a dielectric layer, which are integrated.
摘要翻译：公开了一种制造分散型无机电致发光器件的方法和包括发光层和电介质层的分散型无机电致发光器件。该方法涉及一种分散型无机电致发光器件的制造，其中使用超声波将荧光体颗粒涂覆在金属氧化物前体上，之后将涂覆有金属氧化物前体的荧光体颗粒设置在透明电极和上部电极，形成发光层和电介质层。分散型无机电致发光元件包括多个配置在透明电极和上部电极之间的金属氧化物前体的荧光体粒子，由此提供一体化的发光层和电介质层。

4. 发明授权

US06903500B2 Field emitter device comprising carbon nanotube having protective membrane 失效
标题翻译：包含具有保护膜的碳纳米管的场发射体装置
公开(公告)号：US06903500B2
公开(公告)日：2005-06-07
申请号：US10337858
申请日：2003-01-08
申请人： Tae-won Jeong , Ji-beom Yoo , Whi-kun Yi , Jeong-hee Lee , Se-gi Yu , Chang-soo Lee , Jung-na Heo
发明人： Tae-won Jeong , Ji-beom Yoo , Whi-kun Yi , Jeong-hee Lee , Se-gi Yu , Chang-soo Lee , Jung-na Heo
IPC分类号： H01J65/00 , H01J1/30 , H01J1/304 , H01J61/44 , H01J19/24
CPC分类号： B82Y10/00 , H01J1/304 , Y10S977/745
摘要： A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.
摘要翻译：提供了包括各自具有保护膜的碳纳米管的场发射器件。保护膜由氮化物，碳化物或氧化物形成。用于保护膜的合适的氮化物包括氮化硼，氮化铝，氮化硼和氮化镓。保护膜保护碳纳米管免受由于电弧或不必要的剩余气体的损害，从而提高场发射器件的场发射特性和稳定性。

5. 发明授权

US09371234B2 Method for producing graphene at a low temperature, method for direct transfer of graphene using same, and graphene sheet 有权
标题翻译：在低温下生产石墨烯的方法，使用其石墨烯的直接转移方法和石墨烯片
公开(公告)号：US09371234B2
公开(公告)日：2016-06-21
申请号：US13810144
申请日：2011-07-15
申请人： Byung Hee Hong , Jong-Hyun Ahn , Ji Beom Yoo , Su Kang Bae , Myung Hee Jung , Houk Jang , Youngbin Lee , Sang Jin Kim
发明人： Byung Hee Hong , Jong-Hyun Ahn , Ji Beom Yoo , Su Kang Bae , Myung Hee Jung , Houk Jang , Youngbin Lee , Sang Jin Kim
IPC分类号： H01B1/04 , C01B31/04 , B82Y30/00 , B82Y40/00 , C23C16/01 , C23C16/26
CPC分类号： C01B31/0453 , B82Y30/00 , B82Y40/00 , C01B32/186 , C23C16/01 , C23C16/26
摘要： The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500° C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).
摘要翻译：本发明涉及一种在低温下形成石墨烯的方法，涉及使用其形成石墨烯的直接转移方法和石墨烯片。在低温下形成石墨烯的方法包括向形成在基板上的石墨烯生长用金属催化剂层供给含碳源气体，并通过感应耦合的方式在500℃以下的低温下形成石墨烯等离子体化学气相沉积（ICP-CVD）。

6. 发明申请

US20050194881A1 Flat panel display device and method for making the same 审中-公开
标题翻译：平板显示装置及其制造方法
公开(公告)号：US20050194881A1
公开(公告)日：2005-09-08
申请号：US11070389
申请日：2005-03-02
申请人： Joong-Woo Nam , Tae-Ill Yoon , Jong-Hwan Park , Chun-Gyoo Lee , Deok-Hyeon Choe , Ji-Beom Yoo , Jong-Hyung Choi
发明人： Joong-Woo Nam , Tae-Ill Yoon , Jong-Hwan Park , Chun-Gyoo Lee , Deok-Hyeon Choe , Ji-Beom Yoo , Jong-Hyung Choi
IPC分类号： H01J31/12 , H01J1/05 , H01J1/30 , H01J1/304 , H01J9/02 , H01J29/04
CPC分类号： B82Y10/00
摘要： Disclosed is a method for a making cathode substrate for a flat panel display device including coating a cathode electrode composition on a substrate to produce a cathode electrode, coating a conductive composition including a Si-included material on the cathode electrode to prepare a conductive layer on the cathode electrode and applying an electron emission composition including a material such as carbon nano tube on the conductive layer.
摘要翻译：公开了一种制造用于平板显示装置的阴极基板的方法，包括在基板上涂覆阴极电极组合物以制备阴极电极，在阴极上涂覆包括含Si材料的导电组合物以制备导电层并且在导电层上施加包含碳纳米管等材料的电子发射组合物。

7. 发明授权

US08110979B2 Inorganic electroluminescence device, display apparatus having the same and method thereof 失效
标题翻译：无机电致发光器件，具有该功能的显示装置及其方法
公开(公告)号：US08110979B2
公开(公告)日：2012-02-07
申请号：US12611538
申请日：2009-11-03
申请人： Shang-hyeun Park , Ji-beom Yoo , Mun-Ja Kim , Min-jong Bae , Tae-won Jeong
发明人： Shang-hyeun Park , Ji-beom Yoo , Mun-Ja Kim , Min-jong Bae , Tae-won Jeong
IPC分类号： H01J1/62 , H01J63/04 , H01J9/00
CPC分类号： H01J31/123 , H01J17/49
摘要： An inorganic electroluminescence device including a first electrode and a second electrode disposed apart from each other, and a dielectric material layer disposed between the first and second electrodes. The dielectric material layer has a micro-tubular shape, and a light emitting layer is filled in the dielectric material layer.
摘要翻译：一种无机电致发光器件，包括彼此分开设置的第一电极和第二电极，以及设置在第一和第二电极之间的介电材料层。介电材料层具有微管状，并且在电介质材料层中填充发光层。

8. 发明申请

US20100244663A1 INORGANIC ELECTROLUMINESCENCE DEVICE, DISPLAY APPARATUS HAVING THE SAME AND METHOD THEREOF 失效
标题翻译：无机电致发光器件，显示装置及其方法
公开(公告)号：US20100244663A1
公开(公告)日：2010-09-30
申请号：US12611538
申请日：2009-11-03
申请人： Shang-hyeun PARK , Ji-beom YOO , Mun-Ja KIM , Min-jong BAE , Tae-won JEONG
发明人： Shang-hyeun PARK , Ji-beom YOO , Mun-Ja KIM , Min-jong BAE , Tae-won JEONG
IPC分类号： H01J1/64 , H01J9/00
CPC分类号： H01J31/123 , H01J17/49
摘要： An inorganic electroluminescence device including a first electrode and a second electrode disposed apart from each other, and a dielectric material layer disposed between the first and second electrodes. The dielectric material layer has a micro-tubular shape, and a light emitting layer is filled in the dielectric material layer.
摘要翻译：一种无机电致发光器件，包括彼此分开设置的第一电极和第二电极，以及设置在第一和第二电极之间的介电材料层。介电材料层具有微管状，并且在电介质材料层中填充发光层。

9. 发明授权

US5504768A Semiconductor laser device and method for manufacturing the same 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US5504768A
公开(公告)日：1996-04-02
申请号：US161422
申请日：1993-12-06
申请人： Chan-Yong Park , Ji-Beom Yoo , Kyung-Hyun Park , Hong-Man Kim , Dong-Hoon Jang , Jung-Kee Lee
发明人： Chan-Yong Park , Ji-Beom Yoo , Kyung-Hyun Park , Hong-Man Kim , Dong-Hoon Jang , Jung-Kee Lee
IPC分类号： H01S5/00 , H01S5/042 , H01S5/12 , H01S5/20 , H01S5/22 , H01S3/18 , H01L21/31
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/12 , H01S5/2081
摘要： A method for manufacturing the semiconductor laser device comprising the steps of sequentially forming an active layer, a photo-waveguide layer, a cladding layer, and an ohmic contact layer on an upper surface of an InP substrate; forming a first patterned dielectric layer on the ohmic contact layer; depositing a patterned photoresist on the ohmic contact layer to define a p- electrode stripe layer; forming the p- electrode stripe layer only on a part of the ohmic contact layer; performing an annealing process; etching back the layers until the photo-waveguide layer is exposed, using the first patterned dielectric layer and the p- electrode stripe layer as an etching mask, to form a ridge; depositing a second dielectric layer on the substrate formed thus; selectively removing the second dielectric layer to form a contact hole on the p- electrode stripe layer; coating a bonding pad metal layer on the second dielectric layer and in the contact hole; and coating an n- electrode metal layer on bottom surface of the substrate. Since ohmic contact resistance is lowered, thermal generation and threshold current of oscillation are decreased. As a result, operating characteristics of the laser device can be largely improved.
摘要翻译：一种制造半导体激光器件的方法，包括以下步骤：在InP衬底的上表面上依次形成有源层，光波导层，包层和欧姆接触层; 在所述欧姆接触层上形成第一图案化电介质层; 在欧姆接触层上沉积图案化的光致抗蚀剂以限定p-电极条纹层; 仅在欧姆接触层的一部分上形成p-电极条纹层; 进行退火处理; 使用第一图案化电介质层和p-电极条纹层作为蚀刻掩模，蚀刻层，直到光波导层被曝光，以形成脊; 在由此形成的衬底上沉积第二介电层; 选择性地去除所述第二电介质层以在所述p电极条带层上形成接触孔; 在所述第二电介质层和所述接触孔中涂覆焊垫金属层; 并在衬底的底表面上涂覆n-电极金属层。由于欧姆接触电阻降低，所以发热和振荡的阈值电流降低。结果，可以大大提高激光器件的工作特性。

10. 发明授权

US5369292A Avalanche photodiode having a multiplication layer with superlattice 失效
标题翻译：雪崩光电二极管具有超晶格的乘法层
公开(公告)号：US5369292A
公开(公告)日：1994-11-29
申请号：US149775
申请日：1993-11-10
申请人： Ji-Beom Yoo , Chan-Yong Park , Hong-Man Kim
发明人： Ji-Beom Yoo , Chan-Yong Park , Hong-Man Kim
IPC分类号： H01L31/0352 , H01L31/107 , H01L31/06
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/1075
摘要： An avalanche photodiode in which a strained superlattice structure is used as a multiplication layer, comprising: an n.sup.+ type InP substrate; an n.sup.+ type InP epitaxial layer formed on a main surface of the substrate; an N type In.sub.1-x Al.sub.x As layer formed on the epitaxial layer; an n.sup.+ type In.sub.1-x Al.sub.x As layer formed on the N type In.sub.1-x Al.sub.x As layer, the n.sup.+ type In.sub.1-x Al.sub.x As layer having a relatively high impurity concentration more than the N type In.sub.1-x Al.sub.x As layer; the multiplication layer deposited on the n.sup.+ type In.sub.1-x Al.sub.x As layer, the multiplication layer having an In.sub.0.53 Ga.sub.0.47 As/In.sub.1-x Al.sub.x As superlattice structure; first and second p.sup.+ type In.sub.1-x Al.sub.x As layers laminated sequentially on the multiplication layer; an absorbing layer formed on the second p.sup.+ type In.sub.1-x Al.sub.x As layer, the absorbing layer being made of an In.sub.0.53 Ga.sub.0.47 As; a P type InP layer formed on the absorbing layer to reduce a surface leakage current; an In.sub.0.53 Ga.sub.0.47 As layer formed on the P type InP layer to be provided for an ohmic contact, and metal layers formed on an upper surface of the In.sub.0.53 Ga.sub.0.47 As layer and the other surface of the substrate, respectively.
摘要翻译：使用应变超晶格结构作为倍增层的雪崩光电二极管，包括：n +型InP衬底; 在衬底的主表面上形成的n +型InP外延层; 形成在外延层上的N型In 1-x Al x As层; 形成在N型In 1-x Al x As层上的n +型In 1-x Al x As层，n +型In 1-x Al x As层具有比N型In 1-x Al x As层更高的杂质浓度; 所述乘法层沉积在n +型In1-xAlxAs层上，所述乘法层具有In0.53Ga0.47As / In1-xAlxAs超晶格结构; 第一和第二p +型In1-xAlxAs层依次层叠在乘法层上; 形成在所述第二p +型In 1-x Al x As层上的吸收层，所述吸收层由In 0.53 Ga 0.47 As制成; 形成在吸收层上的P型InP层，以减少表面泄漏电流; 形成在用于欧姆接触的P型InP层上形成的In0.53Ga0.47As层，以及分别形成在In0.53Ga0.47As层的上表面和衬底的另一表面上的金属层。

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