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    • 4. 发明授权
    • Method and apparatus for reducing back-to-back voltage glitch on high speed data bus
    • 降低高速数据总线上背对背电压毛刺的方法和装置
    • US06507218B1
    • 2003-01-14
    • US09540822
    • 2000-03-31
    • Hing Y. ToJen-Tai Hsu
    • Hing Y. ToJen-Tai Hsu
    • H03K190175
    • G06F13/4077
    • An example embodiment of a method and apparatus for reducing back-to-back voltage glitch on a high speed bus is described. A pre-driver circuit receives an input voltage signal whose voltage level swings from a logically low voltage level to a logically high voltage level where the logically low voltage level approximately equals VSS and the logically high voltage level approximately equals VCC. The pre-driver circuit reduces the magnitude of the voltage swing to create a signal that when delivered to a driver transistor ensures that the driver transistor will operate in its saturation region even when the voltage on the high speed bus is at its minimum specified voltage. When the driver transistor operates in its saturation region it can sink a constant current and provide a high output impedance.
    • 描述了用于减少高速总线上背对背电压毛刺的方法和装置的示例性实施例。 预驱动电路接收输入电压信号,其电压电平从逻辑低电压电平摆动到逻辑高电压电平,其中逻辑低电压电平近似等于VSS,逻辑高电压电平近似等于VCC。 预驱动器电路减小电压摆幅的大小,以产生当传送到驱动器晶体管时确保驱动晶体管即使在高速总线上的电压处于其最小指定电压时也将在其饱和区域中工作的信号。 当驱动晶体管工作在饱和区域时,它可以吸收恒定电流并提供高输出阻抗。
    • 6. 发明授权
    • Method and apparatus for local parameter variation compensation
    • 局部参数变化补偿方法和装置
    • US06556022B2
    • 2003-04-29
    • US09895290
    • 2001-06-29
    • Thomas ToJen-Tai HsuAndrew M. Volk
    • Thomas ToJen-Tai HsuAndrew M. Volk
    • G01R2700
    • H03K19/00384
    • In order to detect performance parameter variations at different locations, local parameter detectors are located at the various local locations. One of the local locations is selected as the reference location while the other local locations are selected as destination locations. The reference location is utilized to determine a reference parameter value, while each destination location compares its local parameter value to the reference parameter value. The parameter values are current encoded and the reference parameter value is sent to the other locations for the comparisons. The comparison at the destination locations each generates a corrective signal to compensate for the difference in the parameter value between the locations. Parameter compensation is provided to reduce performance skew among the distributed locations.
    • 为了检测不同位置的性能参数变化,本地参数检测器位于各种局部位置。 选择其中一个本地位置作为参考位置,而选择其他本地位置作为目标位置。 参考位置用于确定参考参数值,而每个目标位置将其本地参数值与参考参数值进行比较。 参数值是当前编码的,参考参数值被发送到其他位置进行比较。 目的地位置处的比较各自产生校正信号以补偿位置之间的参数值的差异。 提供参数补偿以减少分布位置之间的性能偏差。
    • 7. 发明授权
    • High voltage tolerant I/O buffer
    • 高耐压I / O缓冲器
    • US06313661B1
    • 2001-11-06
    • US09540395
    • 2000-03-31
    • Jen-Tai Hsu
    • Jen-Tai Hsu
    • H03K190175
    • H03K19/00315
    • An input/output (I/O) buffer having an output node tolerant of an externally applied high voltage signal is powered by a lower voltage supply potential and comprises a n-well region and a bias generation circuit that generates a reference voltage at an internal node. A PMOS pull-up transistor is coupled between the lower voltage supply potential and the output node, and NMOS pull-down transistor is coupled between the output node and a ground reference potential. First and second PMOS charging transistors each of their gates coupled to the internal node, with the first PMOS charging transistor being coupled between the output node and the gate of the PMOS pull-up transistor. The second PMOS charging transistor is coupled between the output node and the n-well region. The first and second charging transistors operate to pass a pad voltage applied to the output node to the gate of the PMOS pull-up transistor and the n-well region, respectively, when the pad voltage reaches or exceeds the lower voltage supply potential.
    • 具有外部施加的高电压信号的输出节点的输入/输出(I / O)缓冲器由较低电压电源供电,并且包括n阱区域和偏置产生电路,其在内部产生参考电压 节点。 PMOS上拉晶体管耦合在低电压电源电压和输出节点之间,并且NMOS下拉晶体管耦合在输出节点和接地参考电位之间。 其第一和第二PMOS充电晶体管的每个门耦合到内部节点,其中第一PMOS充电晶体管耦合在输出节点和PMOS上拉晶体管的栅极之间。 第二PMOS充电晶体管耦合在输出节点和n阱区之间。 当焊盘电压达到或超过较低电压供应电位时,第一和第二充电晶体管分别操作施加到输出节点的焊盘电压到PMOS上拉晶体管和n阱区的栅极。
    • 8. 发明授权
    • Clock and data recovery system
    • 时钟和数据恢复系统
    • US08547149B2
    • 2013-10-01
    • US13064520
    • 2011-03-30
    • Fu-Tai AnJen-Tai HsuYi-Lin Lee
    • Fu-Tai AnJen-Tai HsuYi-Lin Lee
    • H03L7/06
    • H03L7/093H04L7/033
    • This invention provides a clock and data recovery system, which comprises a plurality of gm cells, control device, resistor and capacitor. The gm cells respectively have an input end and an output end. The control devices are connected to these output ends. According to a time value, the control device controls a part of the plurality of gm cells to form a first gm cell, and the control device controls another part of the plurality of gm cells to form a second gm cell. The resistor is connected between the first gm cell and the second gm cell. The capacitor is connected to the second gm cell. Wherein, the control device controls the ratio of the first gm cell and the second gm cell in accordance with a time-division multiplexed manner.
    • 本发明提供一种时钟和数据恢复系统,其包括多个gm单元,控制装置,电阻器和电容器。 gm单元分别具有输入端和输出端。 控制装置连接到这些输出端。 根据时间值,控制装置控制多个gm单元的一部分以形成第一gm单元,并且控制装置控制多个gm单元的另一部分以形成第二gm单元。 电阻连接在第一个gm单元和第二个gm单元之间。 电容器连接到第二个gm单元。 其中,控制装置根据时分复用方式控制第一gm单元和第二gm单元的比率。