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1. 发明申请

US20130337629A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130337629A1
公开(公告)日：2013-12-19
申请号：US13523912
申请日：2012-06-15
申请人： Tieh-Chiang Wu , Wei-Ming Liao , Jei-Cheng Huang , Shin-Yu Nieh
发明人： Tieh-Chiang Wu , Wei-Ming Liao , Jei-Cheng Huang , Shin-Yu Nieh
IPC分类号： H01L21/02
CPC分类号： H01L29/66181 , H01L27/0629 , H01L27/108 , H01L27/10861 , H01L29/945
摘要： A method of fabricating a semiconductor device is described. A substrate having first and second areas is provided. A first patterned mask layer having at least one first opening in the first area and at least one second opening in the second area is formed over the substrate, wherein the first opening is smaller than the second opening. A portion of the substrate is removed with the first patterned mask layer as a mask to form first and second trenches respectively in the substrate in the first and second areas, wherein the width and the depth of the first trench are less than those of the second trench. A first dielectric layer is formed at least in the first and second trenches. A conductive structure is formed on the first dielectric layer on at least a portion of the sidewall of each of the first and second trenches.
摘要翻译：描述制造半导体器件的方法。提供具有第一和第二区域的基板。第一图案化掩模层在第一区域中具有至少一个第一开口和第二区域中的至少一个第二开口形成在衬底上，其中第一开口小于第二开口。用第一图案化掩模层作为掩模去除衬底的一部分，以分别在第一和第二区域中的衬底中形成第一和第二沟槽，其中第一沟槽的宽度和深度小于第二沟槽的宽度和深度沟。至少在第一和第二沟槽中形成第一介电层。在所述第一和第二沟槽中的每一个的侧壁的至少一部分上的第一介电层上形成导电结构。

2. 发明授权

US08912065B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08912065B2
公开(公告)日：2014-12-16
申请号：US13523912
申请日：2012-06-15
申请人： Tieh-Chiang Wu , Wei-Ming Liao , Jei-Cheng Huang , Shin-Yu Nieh
发明人： Tieh-Chiang Wu , Wei-Ming Liao , Jei-Cheng Huang , Shin-Yu Nieh
IPC分类号： H01L21/336
CPC分类号： H01L29/66181 , H01L27/0629 , H01L27/108 , H01L27/10861 , H01L29/945
摘要： A method of fabricating a semiconductor device is described. A substrate having first and second areas is provided. A first patterned mask layer having at least one first opening in the first area and at least one second opening in the second area is formed over the substrate, wherein the first opening is smaller than the second opening. A portion of the substrate is removed with the first patterned mask layer as a mask to form first and second trenches respectively in the substrate in the first and second areas, wherein the width and the depth of the first trench are less than those of the second trench. A first dielectric layer is formed at least in the first and second trenches. A conductive structure is formed on the first dielectric layer on at least a portion of the sidewall of each of the first and second trenches.
摘要翻译：描述制造半导体器件的方法。提供具有第一和第二区域的基板。第一图案化掩模层在第一区域中具有至少一个第一开口和第二区域中的至少一个第二开口形成在衬底上，其中第一开口小于第二开口。用第一图案化掩模层作为掩模去除衬底的一部分，以分别在第一和第二区域中的衬底中形成第一和第二沟槽，其中第一沟槽的宽度和深度小于第二沟槽的宽度和深度沟。至少在第一和第二沟槽中形成第一电介质层。在所述第一和第二沟槽中的每一个的侧壁的至少一部分上的第一介电层上形成导电结构。

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