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    • 8. 发明申请
    • Dispersed growth of nanotubes on a substrate
    • 纳米管在基体上的分散生长
    • US20070140946A1
    • 2007-06-21
    • US11703293
    • 2007-02-07
    • Jean-Christophe GabrielKeith BradleyPhilip Collins
    • Jean-Christophe GabrielKeith BradleyPhilip Collins
    • D01F9/12
    • D01F9/12B82Y10/00B82Y30/00D01F9/127H01L29/1025H01L29/12H01L29/66409H01L29/772
    • Methods of forming a dispersion of nanostructures, a distribution of carbon nanotubes, and an array of nanostructure devices are described. The methods involve providing a substrate, applying growth promoter to at least a portion of the substrate, exposing the substrate and the growth promoter to a plasma, and forming a dispersion of nanostructures from the growth promoter after the plasma exposure. Exposing the substrate and the growth promoter to a plasma disperses at least a portion of the growth promoter as distinct, isolated growth promoter areas over the substrate. Preferably, the growth promoter areas are nanoparticles between about 1 nm and 50 nm in size and they are dispersed approximately uniformly over the substrate. An array of nanostructure devices is also described. The array of devices includes a substrate, a dispersion of nanostructures disposed discontinuously on the substrate and an array of electrodes in contact with the dispersion of nanostructures. The nanostructures may be nanotubes or nanowires. Preferably, the dispersion of nanostructures is approximately planar and substantially in contact with the substrate. Regions containing nanostructures can provide electrical communication between two or more electrodes.
    • 描述形成纳米结构分散体,碳纳米管分布和纳米结构器件阵列的方法。 所述方法包括提供底物,将生长促进剂施用于至少一部分底物,将底物和生长促进剂暴露于血浆,以及在等离子体暴露后从生长促进剂形成纳米结构的分散体。 将底物和生长促进剂暴露于等离子体将至少一部分生长促进剂分散在衬底上作为不同的分离的生长促进剂区域。 优选地,生长促进剂区域是尺寸在约1nm和50nm之间的纳米颗粒,并且它们大致均匀地分散在基底上。 还描述了纳米结构器件的阵列。 器件阵列包括衬底,不连续地设置在衬底上的纳米结构的分散体和与纳米结构分散体接触的电极阵列。 纳米结构可以是纳米管或纳米线。 优选地,纳米结构的分散体近似平面并且基本上与基底接触。 包含纳米结构的区域可以提供两个或更多个电极之间的电连通。