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1. 发明申请

US20080179746A1 WIRING STRUCTURES OF SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：半导体器件的布线结构及其形成方法
公开(公告)号：US20080179746A1
公开(公告)日：2008-07-31
申请号：US12017538
申请日：2008-01-22
申请人： Won-Goo Hur , Dong-Kyun Park , Je-Hyeon Park , Young-Joo Cho , Kyu-Tae Na
发明人： Won-Goo Hur , Dong-Kyun Park , Je-Hyeon Park , Young-Joo Cho , Kyu-Tae Na
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76838 , H01L21/28556 , H01L21/28562 , H01L21/76877 , H01L27/10885 , H01L27/10888 , H01L27/11521
摘要： A wiring structure of a semiconductor device comprises an insulating interlayer, a plug and a conductive pattern. The insulating interlayer has an opening therethrough on a substrate. The plug includes tungsten and fills up the opening. The plug is formed by a deposition process using a reaction of a source gas. A conductive pattern structure makes contact with the plug and includes a first tungsten layer pattern and a second tungsten layer pattern. The first tungsten layer pattern is formed by the deposition process. The second tungsten layer pattern is formed by a physical vapor deposition (PVD) process.
摘要翻译：半导体器件的布线结构包括绝缘中间层，插头和导电图案。绝缘中间层在基板上具有穿过其的开口。插头包括钨并填满开口。插塞通过使用源气体的反应的沉积工艺形成。导电图案结构与插头接触并且包括第一钨层图案和第二钨层图案。第一钨层图案通过沉积工艺形成。第二钨层图案通过物理气相沉积（PVD）工艺形成。

2. 发明申请

US20170062470A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20170062470A1
公开(公告)日：2017-03-02
申请号：US15249090
申请日：2016-08-26
申请人： Hauk HAN , Je-Hyeon PARK , Kihyun YOON , Changwon LEE , HyunSeok LIM , Jooyeon HA
发明人： Hauk HAN , Je-Hyeon PARK , Kihyun YOON , Changwon LEE , HyunSeok LIM , Jooyeon HA
IPC分类号： H01L27/115 , H01L23/535
CPC分类号： H01L27/11582 , H01L21/76847 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L21/76877 , H01L23/53266 , H01L23/535 , H01L27/11565 , H01L27/1157 , H01L27/11573 , H01L27/11575
摘要： A semiconductor device includes a lower structure including a lower conductor, an upper structure having an opening exposing the lower conductor on the lower structure, and a connection structure filling the opening and connected to the lower conductor. The connection structure includes a first tungsten layer covering an inner surface of the opening and defining a recess region in the opening, and a second tungsten layer filling the recess region on the first tungsten layer. A grain size of the second tungsten layer in an upper portion of the connection structure is greater than a grain size of the second tungsten layer in a lower portion of the connection structure.
摘要翻译：半导体器件包括下结构，其包括下导体，具有露出下结构上的下导体的开口的上结构，以及填充该开口并连接到下导体的连接结构。连接结构包括覆盖开口的内表面并且限定开口中的凹陷区域的第一钨层和填充第一钨层上的凹陷区域的第二钨层。连接结构的上部的第二钨层的粒径大于连接结构的下部的第二钨层的粒径。

3. 发明授权

US08955903B2 Roll blind for vehicles 有权
标题翻译：车盲卷帘
公开(公告)号：US08955903B2
公开(公告)日：2015-02-17
申请号：US13878005
申请日：2011-03-15
申请人： Je-Hyeon Park , Seung-Min Yun , Eun-Bum Kim , Myung-Kwon Jang
发明人： Je-Hyeon Park , Seung-Min Yun , Eun-Bum Kim , Myung-Kwon Jang
IPC分类号： B60J7/043 , B60J3/02 , B60J7/00
CPC分类号： B60J7/0015
摘要： A roll blind for a vehicle, including: a guide frame formed in an inner circumference of an opening formed in a sun roof of the vehicle; a fixing shaft fixed to either of anterior and posterior areas of the vehicle on the guide frame; an opening shaft disposed on the other one of the anterior and posterior areas to which the fixing shaft is fixed; a blind disposed to selectively cover the opening according to a sliding operation of the opening shaft; and a pressing unit disposed between the fixing shaft and the opening shaft, sliding along the guide frame, rolling a central portion of the blind upward from an upper side of the blind in right and left directions of the vehicle, simultaneously wrapping two sides of the blind and simultaneously providing tension to the blind that moves from the anterior and posterior areas.
摘要翻译：一种用于车辆的卷帘，包括：形成在形成在车辆的太阳屋顶上的开口的内周中的引导框架; 固定轴，其固定在所述引导框架上的所述车辆的前部和后部区域中的任一个上; 设置在所述固定轴固定到所述前部和后部区域中的另一个上的开放轴; 盲板，其设置成根据所述开口轴的滑动操作选择性地覆盖所述开口; 以及按压单元，其设置在所述固定轴和所述开口轴之间，沿着所述引导框架滑动，从所述盲板的上侧沿车辆的左右方向向上滚动所述盲板的中心部分，同时将所述盲板的两侧盲目地同时向从前部和后部区域移动的盲人提供张力。

4. 发明申请

US20130187403A1 ROLL BLIND FOR VEHICLES 有权
标题翻译：用于车辆的滚筒
公开(公告)号：US20130187403A1
公开(公告)日：2013-07-25
申请号：US13878005
申请日：2011-03-15
申请人： Je-Hyeon Park , Seung-Min Yun , Eun-Bum Kim , Myung-Kwon Jang
发明人： Je-Hyeon Park , Seung-Min Yun , Eun-Bum Kim , Myung-Kwon Jang
IPC分类号： B60J7/00
CPC分类号： B60J7/0015
摘要： The present invention provides a roll blind for a vehicle, comprising: a guide frame formed in an inner circumference of an opening formed in a sun roof of the vehicle; a fixing shaft fixed to either of anterior and posterior areas of the vehicle on the guide frame; an opening shaft disposed on the other one of the anterior and posterior areas of the vehicle to which the fixing shaft is fixed, the opening shaft sliding along the guide frame in a forward/backward direction of the vehicle; a blind, of which both ends are fixed to the opening shaft and the fixing shaft and which is disposed to selectively cover the opening according to a sliding operation of the opening shaft; and a pressing unit disposed between the fixing shaft and the opening shaft, sliding along the guide frame, rolling a central portion of the blind upward from an upper side of the blind in right and left directions of the vehicle, simultaneously wrapping two sides of the blind and simultaneously providing tension to the blind that moves from the anterior and posterior areas of the vehicle. In the roll blind for the vehicle according to the present invention, the use of only one pressing unit to open/close the blind in the forward/backward direction effectively provides a simple structure with reduced weight. Additionally, deflection of the blind is effectively prevented and manufacturing costs are reduced due to the simple structure.
摘要翻译：本发明提供了一种用于车辆的卷帘，包括：形成在形成在车辆的太阳屋顶上的开口的内周中的引导框架; 固定轴，其固定在所述引导框架上的所述车辆的前部和后部区域中的任一个上; 所述开口轴设置在所述固定轴固定在所述车辆的前部和后部区域中的另一个上，所述开口轴沿所述引导框架沿所述车辆的前后方向滑动; 盲孔，其两端固定在开口轴和固定轴上，并且被设置成根据开启轴的滑动操作选择性地覆盖开口; 以及按压单元，其设置在所述固定轴和所述开口轴之间，沿着所述引导框架滑动，从所述盲板的上侧沿车辆的左右方向向上滚动所述盲板的中心部分，同时将所述盲板的两侧盲目地同时向从车辆的前部和后部区域移动的盲人提供张力。在根据本发明的车辆用卷帘中，仅使用一个按压单元在前后方向上打开/关闭盲孔有效地提供了减轻重量的简单结构。此外，由于结构简单，有效地防止了盲板的挠曲并降低了制造成本。

5. 发明授权

US08679920B2 Semiconductor devices having stacked structures and a layer formed thereon tapered in direction opposite of a tapering of the stacked structures and methods of fabricating the same 有权
标题翻译：具有堆叠结构的半导体器件和形成在其上的层与层叠结构的锥形方向相反的方向形成，并且其制造方法
公开(公告)号：US08679920B2
公开(公告)日：2014-03-25
申请号：US13273935
申请日：2011-10-14
申请人： Hauk Han , Byoung-Kyu Lee , Jingi Hong , Changwon Lee , Eungjoon Lee , Je-Hyeon Park , Jeonggil Lee
发明人： Hauk Han , Byoung-Kyu Lee , Jingi Hong , Changwon Lee , Eungjoon Lee , Je-Hyeon Park , Jeonggil Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/7827 , H01L27/11582 , H01L29/66666 , H01L29/7926
摘要： Semiconductor devices and methods of fabricating semiconductor devices that may include forming an insulation structure including insulation patterns that are sequentially stacked and vertically separated from each other to provide gap regions between the insulation patterns, forming a first conductive layer filling the gap regions and covering two opposite sidewalls of the insulation structure, and forming a second conductive layer covering the first conductive layer. A thickness of the second conductive layer covering an upper sidewall of the insulation structure is greater than a thickness of the second conductive layer covering a lower sidewall of the insulation structure.
摘要翻译：制造半导体器件的半导体器件和方法，其可以包括形成绝缘结构，所述绝缘结构包括彼此依次层叠并垂直分离的绝缘图案，以在绝缘图案之间提供间隙区域，形成填充间隙区域并覆盖两个相对的间隔区域的第一导电层并且形成覆盖第一导电层的第二导电层。覆盖绝缘结构的上侧壁的第二导电层的厚度大于覆盖绝缘结构的下侧壁的第二导电层的厚度。

6. 发明授权

US08563429B2 Methods of forming a metal silicide layer for semiconductor devices 失效
标题翻译：形成用于半导体器件的金属硅化物层的方法
公开(公告)号：US08563429B2
公开(公告)日：2013-10-22
申请号：US12704873
申请日：2010-02-12
申请人： Won-Goo Hur , Kyu-Tae Na , Min Kim , Hyun-Young Kim , Je-Hyeon Park
发明人： Won-Goo Hur , Kyu-Tae Na , Min Kim , Hyun-Young Kim , Je-Hyeon Park
IPC分类号： H01L21/44 , H01L21/302 , H01L21/461 , H01L21/336 , H01L21/8234 , H01L21/8238
CPC分类号： H01L27/11524 , H01L29/665 , H01L29/66825
摘要： Methods of forming a metal silicide layer are provided that include exposing polysilicon through just dry etching (JDE) and recessesing an oxide layer through chemical dry etching (CDE). In particular, dry etching is primarily performed to an extent to expose the polysilicon. Then, CDE is secondarily performed to expose the polysilicon. The CDE process includes selecting an etchant source among combinations of NF3 and NH3, HF and NH3, and N2, H2, and NF3, dissociating the etchant source, forming an etchant of NH4F and NH4F.HF through the dissociation, producing solid by-products of (NH4)2SiF6 through the reaction between the etchant and an oxide at a low temperature, and annealing the by-products at a high temperature such that the by-products are sublimated into gas-phase SiF4, NH3, and HF.
摘要翻译：提供了形成金属硅化物层的方法，其包括通过刚刚干蚀刻（JDE）暴露多晶硅并通过化学干蚀刻（CDE）凹陷氧化物层。特别地，干蚀刻主要在暴露多晶硅的程度上进行。然后，再次执行CDE以暴露多晶硅。 CDE方法包括在NF3和NH3，HF和NH3以及N2，H2和NF3的组合中选择蚀刻源，解离蚀刻剂源，通过解离形成NH4F和NH4F.HF的蚀刻剂，产生固体副产物的（NH 4）2 SiF 6通过蚀刻剂和氧化物在低温下的反应，并在高温下退火副产物，使得副产物升华成气相SiF 4，NH 3和HF。

7. 发明申请

US20100210099A1 METHODS OF FORMING A METAL SILICIDE LAYER FOR SEMICONDUCTOR DEVICES 失效
标题翻译：形成用于半导体器件的金属硅化物层的方法
公开(公告)号：US20100210099A1
公开(公告)日：2010-08-19
申请号：US12704873
申请日：2010-02-12
申请人： Won-Goo Hur , Kyu-Tae Na , Min Kim , Hyun-Young Kim , Je-Hyeon Park
发明人： Won-Goo Hur , Kyu-Tae Na , Min Kim , Hyun-Young Kim , Je-Hyeon Park
IPC分类号： H01L21/28 , H01L21/285
CPC分类号： H01L27/11524 , H01L29/665 , H01L29/66825
摘要： Methods of forming a metal silicide layer are provided that include exposing polysilicon through just dry etching (JDE) and recessesing an oxide layer through chemical dry etching (CDE). In particular, dry etching is primarily performed to an extent to expose the polysilicon. Then, CDE is secondarily performed to expose the polysilicon. The CDE process includes selecting an etchant source among combinations of NF3 and NH3, HF and NH3, and N2, H2, and NF3, dissociating the etchant source, forming an etchant of NH4F and NH4F.HF through the dissociation, producing solid by-products of (NH4)2SiF6 through the reaction between the etchant and an oxide at a low temperature, and annealing the by-products at a high temperature such that the by-products are sublimated into gas-phase SiF4, NH3, and HF.
摘要翻译：提供了形成金属硅化物层的方法，其包括通过刚刚干蚀刻（JDE）暴露多晶硅并通过化学干蚀刻（CDE）凹陷氧化物层。特别地，干蚀刻主要在暴露多晶硅的程度上进行。然后，再次执行CDE以暴露多晶硅。 CDE方法包括在NF3和NH3，HF和NH3以及N2，H2和NF3的组合中选择蚀刻源，解离蚀刻剂源，通过解离形成NH4F和NH4F.HF的蚀刻剂，产生固体副产物的（NH 4）2 SiF 6通过蚀刻剂和氧化物在低温下的反应，并且在高温下退火副产物，使得副产物升华成气相SiF 4，NH 3和HF。

8. 发明授权

US10079245B2 Semiconductor device and method for fabricating same 有权
公开(公告)号：US10079245B2
公开(公告)日：2018-09-18
申请号：US15249090
申请日：2016-08-26
申请人： Hauk Han , Je-Hyeon Park , Kihyun Yoon , Changwon Lee , HyunSeok Lim , Jooyeon Ha
发明人： Hauk Han , Je-Hyeon Park , Kihyun Yoon , Changwon Lee , HyunSeok Lim , Jooyeon Ha
IPC分类号： H01L23/52 , H01L27/11582 , H01L27/1157 , H01L23/535
CPC分类号： H01L27/11582 , H01L21/76847 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L21/76877 , H01L23/53266 , H01L23/535 , H01L27/11565 , H01L27/1157 , H01L27/11573 , H01L27/11575
摘要： A semiconductor device includes a lower structure including a lower conductor, an upper structure having an opening exposing the lower conductor on the lower structure, and a connection structure filling the opening and connected to the lower conductor. The connection structure includes a first tungsten layer covering an inner surface of the opening and defining a recess region in the opening, and a second tungsten layer filling the recess region on the first tungsten layer. A grain size of the second tungsten layer in an upper portion of the connection structure is greater than a grain size of the second tungsten layer in a lower portion of the connection structure.

9. 发明申请

US20120094453A1 Semiconductor Devices And Methods Of Fabricating The Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120094453A1
公开(公告)日：2012-04-19
申请号：US13273935
申请日：2011-10-14
申请人： Hauk Han , Byoung-Kyu Lee , Jingi Hong , Changwon Lee , Eungjoon Lee , Je-Hyeon Park , Jeonggil Lee
发明人： Hauk Han , Byoung-Kyu Lee , Jingi Hong , Changwon Lee , Eungjoon Lee , Je-Hyeon Park , Jeonggil Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/7827 , H01L27/11582 , H01L29/66666 , H01L29/7926
摘要： Semiconductor devices and methods of fabricating semiconductor devices that may include forming an insulation structure including insulation patterns that are sequentially stacked and vertically separated from each other to provide gap regions between the insulation patterns, forming a first conductive layer filling the gap regions and covering two opposite sidewalls of the insulation structure, and forming a second conductive layer covering the first conductive layer. A thickness of the second conductive layer covering an upper sidewall of the insulation structure is greater than a thickness of the second conductive layer covering a lower sidewall of the insulation structure.
摘要翻译：制造半导体器件的半导体器件和方法，其可以包括形成绝缘结构，所述绝缘结构包括彼此依次层叠并垂直分离的绝缘图案，以在绝缘图案之间提供间隙区域，形成填充间隙区域并覆盖两个相对的间隔区域的第一导电层并且形成覆盖第一导电层的第二导电层。覆盖绝缘结构的上侧壁的第二导电层的厚度大于覆盖绝缘结构的下侧壁的第二导电层的厚度。

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