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    • 1. 发明授权
    • Wood-type golf clubs with tubing and weights
    • 木质高尔夫球杆,带管道和重物
    • US08475292B2
    • 2013-07-02
    • US12774424
    • 2010-05-05
    • Donald S. RahrigRobert BoydJames S. Thomas
    • Donald S. RahrigRobert BoydJames S. Thomas
    • A63B53/04
    • A63B53/0466A63B2053/0416A63B2053/045A63B2053/0454Y10T29/49826
    • Wood-type golf clubs as described herein may include: (a) a hosel to receive a golf club shaft; (b) a club head; and (c) a ball striking face. The club head include may include: a plurality of weights, a plurality of tubes, and an exterior cover structure (e.g., an exterior skin) that covers at least a portion of the plurality of weights and at least a portion of the plurality of tubes, and wherein the exterior cover structure defines the shape of the club head. Additionally, the ball striking face may be engaged with at least two of the plurality of weights and/or at least two of the tubes. The plurality of weights may include a first weight, a second weight, a third weight, and a fourth weight that are all engaged with the striking face.
    • 如本文所述的木型高尔夫球杆可以包括:(a)用于接收高尔夫球杆杆的插鞘; (b)球杆头; 和(c)击球面。 球杆头部包括:多个重物,多个管,以及覆盖多个重物的至少一部分的至少一部分多个管的外部盖结构(例如,外部皮肤) ,并且其中所述外盖结构限定所述球杆头的形状。 另外,击球面可以与多个重物中的至少两个和/或至少两个管接合。 多个重物可以包括都与打击面接合的第一重物,第二重量,第三重量和第四重量。
    • 5. 发明授权
    • Technique to support progressively programmable nonvolatile memory
    • 技术支持逐步编程的非易失性存储器
    • US5390317A
    • 1995-02-14
    • US210409
    • 1994-03-18
    • Donald G. WeissLaura M. DobbsJames S. ThomasGregory A. Racino
    • Donald G. WeissLaura M. DobbsJames S. ThomasGregory A. Racino
    • G11C17/00G06F12/14G11C16/08G06F12/00G06F12/16
    • G06F12/1433G11C16/08
    • A nonvolatile memory (28) in a data processor (10) is capable of being progressively programmed and/or accessed in a user determined number of sections. A user can program and/or access what appears to the user to be reprogrammable nonvolatile memory (28) at a same address when in actuality the user is programming and accessing sequential sections of nonvolatile memory (28). Nonvolatile information stored in nonvolatile control bits (20) is used to control which section of the nonvolatile memory is connected to a communication bus and is thus accessible to the user. When the user desires to write and/or access a new section of nonvolatile memory (28), either the user directly asserts one of the nonvolatile control bits (20) using software, or the nonvolatile control (24) asserts one of the nonvolatile control bits (20) using hardware.
    • 数据处理器(10)中的非易失性存储器(28)能够以用户确定的部分数量逐渐编程和/或访问。 当实际上用户正在编程和访问非易失性存储器(28)的顺序部分时,用户可以编程和/或访问在同一地址处对用户进行重新编程的非易失性存储器(28)的显示。 存储在非易失性控制位(20)中的非易失性信息用于控制非易失性存储器的哪一部分连接到通信总线,并且由此可被用户访问。 当用户期望写入和/或访问非易失性存储器(28)的新部分时,用户使用软件直接断言其中一个非易失性控制位(20),或者非易失性控制(24)断言非易失性控制 位(20)使用硬件。
    • 6. 发明授权
    • High voltage detection circuit
    • 高电压检测电路
    • US4318013A
    • 1982-03-02
    • US35042
    • 1979-05-01
    • James S. ThomasKim Eckert
    • James S. ThomasKim Eckert
    • H03K5/24H03K17/30H03K17/687
    • H03K5/2472
    • An N-channel MOS high voltage detection circuit generates an output when an input voltage (Vin) exceeds a supply voltage (V.sub.DD) by a desired offset voltage. The crossover detection is delayed by pumping more current into an output producing node via a lower resistance field effect transistor having a gate coupled to the input voltage. The output is finally produced when the effect of this transistor is overcome by a second field effect transistor. Switching characteristics may be sharpened by placing a voltage limiting field effect transistor between Vin and the gate of the low resistance field effect transistor.
    • 当输入电压(Vin)超过电源电压(VDD)达到期望的偏移电压时,N沟道MOS高电压检测电路产生输出。 通过经由具有耦合到输入电压的栅极的下电阻场效应晶体管将更多的电流泵入输出产生节点来延迟交叉检测。 当第二场效应晶体管克服该晶体管的影响时,最终产生输出。 通过在Vin和低电阻场效应晶体管的栅极之间放置限压场效应晶体管,可以削尖开关特性。