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1. 发明授权

US09239659B2 Content distribution system and method 有权
标题翻译：内容分发系统和方法
公开(公告)号：US09239659B2
公开(公告)日：2016-01-19
申请号：US13664904
申请日：2012-10-31
申请人： James Plummer
发明人： James Plummer
IPC分类号： G06F3/00 , G06F3/0481 , G06Q50/00 , G06Q10/10
CPC分类号： G06F3/0481 , G06Q10/107 , G06Q50/01
摘要： A method and computing system for associating a first portion of a display screen with a social network, wherein the display screen is included within a handheld device. Initial social network content is received from the social network, wherein the initial social network content is associated with an event occurring within the social network. The initial social network content is dynamically rendered within the first portion of the display screen. A user indication is received within the first portion of the display screen. In response to the user indication, enhanced social network content is rendered within a second portion of the display screen. The initial social network content is at least a portion of a media stream included within the social network. The enhanced social network content includes content associated with the event occurring within the social network.
摘要翻译：一种用于将显示屏幕的第一部分与社交网络相关联的方法和计算系统，其中所述显示屏幕包括在手持设备内。从社交网络接收初始社交网络内容，其中初始社交网络内容与在社交网络内发生的事件相关联。初始社交网络内容在显示屏幕的第一部分内被动态呈现。在显示屏幕的第一部分内接收用户指示。响应于用户指示，增强的社交网络内容被呈现在显示屏幕的第二部分内。初始社交网络内容是包括在社交网络内的媒体流的至少一部分。增强的社交网络内容包括与在社交网络内发生的事件相关联的内容。

2. 发明申请

US20070087507A1 Crystalline-type device and approach therefor 有权
标题翻译：结晶型装置及其方法
公开(公告)号：US20070087507A1
公开(公告)日：2007-04-19
申请号：US10590223
申请日：2004-03-17
申请人： Yaocheng Liu , Michael Deal , James Plummer
发明人： Yaocheng Liu , Michael Deal , James Plummer
IPC分类号： H01L21/336 , H01L29/94 , H01L29/76 , H01L31/00
CPC分类号： H01L29/78684 , H01L29/66742 , H01L29/785
摘要： Single-crystalline growth is realized using a liquid-phase crystallization approach involving the inhibition of defects typically associated with liquid-phase crystalline growth of lattice mismatched materials. According to one example embodiment, a semiconductor device structure includes a substantially single-crystal region. A liquid-phase material is crystallized to form the single-crystal region using an approach involving defect inhibition for the promotion of single-crystalline growth. In some instances, this defect inhibition involves the reduction and/or elimination of defects using a relatively small physical opening via which a crystalline growth front propagates. In other instances, this defect inhibition involves causing a change in crystallization front direction relative to a crystallization seed location. The relatively small physical opening and/or the change in crystalline front direction may be implemented, for example, using a material that is relatively unreactive with the liquid-phase material to contain the crystalline growth.
摘要翻译：使用液相结晶方法实现单晶生长，其涉及通常与晶格失配材料的液相晶体生长相关的缺陷的抑制。根据一个示例性实施例，半导体器件结构包括基本单晶区域。使用涉及促进单晶生长的缺陷抑制的方法将液相材料结晶以形成单晶区域。在一些情况下，该缺陷抑制包括使用晶体生长前沿传播的相对小的物理开口来减少和/或消除缺陷。在其他情况下，该缺陷抑制涉及相对于结晶种子位置导致结晶前沿方向的变化。可以例如使用与液相材料相对不反应以含有结晶生长的材料来实现相对小的物理开口和/或晶体前沿的变化。

3. 发明授权

US12017740B2 Boat transport device 有权
公开(公告)号：US12017740B2
公开(公告)日：2024-06-25
申请号：US17489893
申请日：2021-09-30
申请人： James Plummer , Penny Ramstein
发明人： James Plummer , Penny Ramstein
IPC分类号： B63C13/00 , B63B34/26
CPC分类号： B63C13/00 , B63B34/26
摘要： The present invention relates generally to the field of boat transports or carriers which may be mounted to a sidewall of the boat by a bracket. The carrier has a frame and a wheel assembly that has a horizontal cross member, a first vertical fork, a second vertical fork, a mounting bracket and a wheel. An individual may place two boat-mounted brackets on to opposing sides of a boat, so that the user may easily wheel the boat to the desired location. Once at the location, the user can then remove each wheel assembly and use the boat as normal.

4. 发明申请

US20060011940A1 Thyristor-type memory device 失效
标题翻译：晶闸管型存储器件
公开(公告)号：US20060011940A1
公开(公告)日：2006-01-19
申请号：US11206627
申请日：2005-08-18
申请人： Farid Nemati , James Plummer
发明人： Farid Nemati , James Plummer
IPC分类号： H01L29/423
CPC分类号： H01L29/74 , G11C11/39 , H01L27/0617 , H01L27/0688 , H01L27/1023 , H01L27/1027 , H01L27/11 , H01L27/1104 , H01L29/41716 , H01L29/42308 , H01L29/749 , H01L29/87
摘要： A thyristor device can be used to implement a variety of semiconductor memory circuits, including high-density memory-cell arrays and single cell circuits. In one example embodiment, the thyristor device includes doped regions of opposite polarity, and a first word line that is used to provide read and write access to the memory cell. A second word line is located adjacent to and separated by an insulative material from one of the doped regions of the thyristor device for write operations to the memory cell, for example, by enhancing the switching of the thyristor device from a high conductance state to a low conductance state and/or from the low conductance state to the high conductance. This type of memory circuit can be implemented to significantly reduce standby power consumption and access time.
摘要翻译：晶闸管器件可用于实现包括高密度存储单元阵列和单个单元电路的各种半导体存储器电路。在一个示例性实施例中，晶闸管器件包括具有相反极性的掺杂区域，以及用于向存储器单元提供读取和写入访问的第一字线。第二字线例如通过增强晶闸管器件从高电导状态到高电导状态的切换而位于与用于写入操作的晶闸管器件的掺杂区域中的一个的绝缘材料相邻并由绝缘材料隔开的位置低电导状态和/或从低电导状态到高电导状态。可以实现这种类型的存储器电路，以显着降低待机功耗和访问时间。

5. 发明申请

US20230032404A1 Boat Transport Device 有权
公开(公告)号：US20230032404A1
公开(公告)日：2023-02-02
申请号：US17489893
申请日：2021-09-30
申请人： James Plummer , Penny Ramstein
发明人： James Plummer , Penny Ramstein
IPC分类号： B63C13/00 , B63B34/26
摘要： The present invention relates generally to the field of boat transports or carriers which may be mounted to a sidewall of the boat by a bracket. The carrier has a frame and a wheel assembly that has a horizontal cross member, a first vertical fork, a second vertical fork, a mounting bracket and a wheel. An individual may place two boat-mounted brackets on to opposing sides of a boat, so that the user may easily wheel the boat to the desired location. Once at the location, the user can then remove each wheel assembly and use the boat as normal.

6. 发明申请

US20140123029A1 CONTENT DISTRIBUTION SYSTEM AND METHOD 有权
标题翻译：内容分配系统和方法
公开(公告)号：US20140123029A1
公开(公告)日：2014-05-01
申请号：US13664904
申请日：2012-10-31
申请人： James Plummer
发明人： James Plummer
IPC分类号： G06F3/01 , G06F15/16
CPC分类号： G06F3/0481 , G06Q10/107 , G06Q50/01
摘要： A method and computing system for associating a first portion of a display screen with a social network, wherein the display screen is included within a handheld device. Initial social network content is received from the social network, wherein the initial social network content is associated with an event occurring within the social network. The initial social network content is dynamically rendered within the first portion of the display screen. A user indication is received within the first portion of the display screen. In response to the user indication, enhanced social network content is rendered within a second portion of the display screen. The initial social network content is at least a portion of a media stream included within the social network. The enhanced social network content includes content associated with the event occurring within the social network.
摘要翻译：一种用于将显示屏幕的第一部分与社交网络相关联的方法和计算系统，其中所述显示屏幕包括在手持设备内。从社交网络接收初始社交网络内容，其中初始社交网络内容与在社交网络内发生的事件相关联。初始社交网络内容在显示屏幕的第一部分内被动态呈现。在显示屏幕的第一部分内接收用户指示。响应于用户指示，增强的社交网络内容被呈现在显示屏幕的第二部分内。初始社交网络内容是包括在社交网络内的媒体流的至少一部分。增强的社交网络内容包括与在社交网络内发生的事件相关联的内容。

7. 发明申请

US20060113612A1 Insulated-gate semiconductor device and approach involving junction-induced intermediate region 审中-公开
标题翻译：绝缘栅半导体器件和涉及结点诱导中间区域的方法
公开(公告)号：US20060113612A1
公开(公告)日：2006-06-01
申请号：US10518779
申请日：2003-06-19
申请人： Kailash Gopalakrishnan , James Plummer
发明人： Kailash Gopalakrishnan , James Plummer
IPC分类号： H01L29/94
CPC分类号： G11C11/404 , G11C11/405 , H01L27/105 , H01L29/7391 , H01L29/785
摘要： Semiconductor device performance is improved via an insulated-gate PIN-type structure that is adapted to abruptly switch between conductance states by modulating an electric field in the intermediate (I) region. According to an example embodiment of the present invention, an insulated gate-type structure includes a body with first and second end regions and an intermediate region coupled therebetween, the intermediate region having a length defined by junctions at the first and second regions. The first and second end regions have opposite polarizations and the intermediate region has a polarization that is neutral relative to the polarizations of the first and second end regions. The insulated gate-type structure also includes a gate that is coupled to the intermediate region and adapted, with the intermediate region, to apply an electric field nearer one of the two junctions. With the body reverse biased, the electric field can be modulated to switch the structure between a stable state and a current-conducting state in which an avalanche breakdown occurs in the intermediate region.
摘要翻译：通过绝缘栅PIN型结构改善了半导体器件的性能，该结构适于通过调制中间（I）区域中的电场来突然地在电导状态之间切换。根据本发明的示例性实施例，绝缘栅型结构包括具有第一和第二端区的主体以及耦合在它们之间的中间区，中间区具有由第一区和第二区连接限定的长度。第一和第二端区域具有相反的极化，并且中间区域具有相对于第一和第二端部区域的极化为中性的极化。绝缘栅型结构还包括耦合到中间区域并且与中间区域一起施加靠近两个结点之一的电场的栅极。随着体反向偏置，可以调制电场以将结构切换到在中间区域中发生雪崩击穿的稳定状态和导通状态之间。

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