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1. 发明授权

US08659098B2 Resonator and fabrication method thereof 有权
标题翻译：谐振器及其制造方法
公开(公告)号：US08659098B2
公开(公告)日：2014-02-25
申请号：US12388157
申请日：2009-02-18
申请人： Yun-Kwon Park , Byeoung-Ju Ha , Byeong-Kwon Ju , Jae-Sung Rieh , In-Sang Song , Jin-Woo Lee , Jea-Shik Shin , Young-Min Park
发明人： Yun-Kwon Park , Byeoung-Ju Ha , Byeong-Kwon Ju , Jae-Sung Rieh , In-Sang Song , Jin-Woo Lee , Jea-Shik Shin , Young-Min Park
IPC分类号： H01L29/84
CPC分类号： H03H9/462 , B81B2201/0271 , B81C1/00142 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H03H3/0072 , H03H9/2463
摘要： A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.
摘要翻译：提供了一种谐振器制造方法。一种方法包括使用纳米压印技术在基板上提供彼此分离的多个电极图案; 以及形成连接到多个电极图案的延伸电极图案，并且形成跨越延伸的电极图案的纳米结构。因此，纳米机电系统（NEMS）谐振器容易在纳米级制造。

2. 发明授权

US08089316B2 Wideband active circuit with feedback structure 有权
标题翻译：带反馈结构的宽带有源电路
公开(公告)号：US08089316B2
公开(公告)日：2012-01-03
申请号：US12646268
申请日：2009-12-23
申请人： Chul Gyun Park , Jae Sung Rieh , Dong Hyun Kim
发明人： Chul Gyun Park , Jae Sung Rieh , Dong Hyun Kim
IPC分类号： H03F3/45
CPC分类号： H03F1/483 , H03F3/45183 , H03F2200/36 , H03F2203/45652
摘要： A broadband active circuit with a feedback structure includes: an active load unit providing a load varied according to a control voltage; an active circuit unit connected between the active load unit and a ground and outputting a signal corresponding to a pre-set bandwidth, among input signals; and a feedback circuit unit formed between an output terminal of the active circuit unit and the active load unit and providing a signal from the output terminal of the active circuit unit to the active load unit.
摘要翻译：具有反馈结构的宽带有源电路包括：有源负载单元，其提供根据控制电压而变化的负载; 连接在有源负载单元和地之间并在输入信号之间输出与预设带宽对应的信号的有源电路单元; 以及反馈电路单元，形成在有源电路单元的输出端子和有源负载单元之间，并将有源电路单元的输出端子的信号提供给有源负载单元。

3. 发明授权

US07390721B2 Methods of base formation in a BiCMOS process 失效
标题翻译： BiCMOS工艺中碱形成的方法
公开(公告)号：US07390721B2
公开(公告)日：2008-06-24
申请号：US11231385
申请日：2005-09-21
申请人： Peter J. Geiss , Marwan H. Khater , Qizhi Liu , Randy W. Mann , Robert J. Purtell , BethAnn Rainey , Jae-Sung Rieh , Andreas D. Stricker
发明人： Peter J. Geiss , Marwan H. Khater , Qizhi Liu , Randy W. Mann , Robert J. Purtell , BethAnn Rainey , Jae-Sung Rieh , Andreas D. Stricker
IPC分类号： H01L21/331
CPC分类号： H01L29/66242 , H01L21/28518 , H01L21/8249 , H01L27/0623 , H01L29/0804 , H01L29/456 , H01L29/7371
摘要： Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.
摘要翻译：提供了制造具有凸起非本征基极的异质结双极晶体管的方法，其中通过在以自对准方式延伸到发射极区域的凸起的外部基极之上形成硅化物来降低基极电阻。在形成凸起的外基之后，将硅化物形成结合到BiCMOS工艺流程中。本发明还提供了一种异质结双极晶体管，其具有凸起的外部基极和位于凸起外部基极顶部的硅化物。凸起的外基极上面的硅化物以自对准的方式延伸到发射极。发射极通过间隔物与硅化物分离。

4. 发明申请

US20060017066A1 Methods of base formation in a BiCMOS process 失效
标题翻译： BiCMOS工艺中碱形成的方法
公开(公告)号：US20060017066A1
公开(公告)日：2006-01-26
申请号：US11231385
申请日：2005-09-21
申请人： Peter Geiss , Marwan Khater , Qizhi Liu , Randy Mann , Robert Purtell , BethAnn Rainey , Jae-Sung Rieh , Andreas Stricker
发明人： Peter Geiss , Marwan Khater , Qizhi Liu , Randy Mann , Robert Purtell , BethAnn Rainey , Jae-Sung Rieh , Andreas Stricker
IPC分类号： H01L31/109
CPC分类号： H01L29/66242 , H01L21/28518 , H01L21/8249 , H01L27/0623 , H01L29/0804 , H01L29/456 , H01L29/7371
摘要： Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.
摘要翻译：提供了制造具有凸起非本征基极的异质结双极晶体管的方法，其中通过在以自对准方式延伸到发射极区域的凸起的外部基极之上形成硅化物来降低基极电阻。在形成凸起的外基之后，将硅化物形成结合到BiCMOS工艺流程中。本发明还提供了一种异质结双极晶体管，其具有凸起的外部基极和位于凸起外部基极顶部的硅化物。凸起的外基极上面的硅化物以自对准的方式延伸到发射极。发射极通过间隔物与硅化物分离。

5. 发明申请

US20100244113A1 MOS VARACTOR AND FABRICATING METHOD OF THE SAME 有权
标题翻译： MOS变压器及其制作方法
公开(公告)号：US20100244113A1
公开(公告)日：2010-09-30
申请号：US12565197
申请日：2009-09-23
申请人： Jae-Sung Rieh , Yong Ho Oh , Sue Yeon Kim , Seung Yong Lee
发明人： Jae-Sung Rieh , Yong Ho Oh , Sue Yeon Kim , Seung Yong Lee
IPC分类号： H01L29/93 , H01L21/329
CPC分类号： H01L29/93 , H01L29/66174
摘要： The present invention provides a MOS varactor for use in circuits and elements of a millimeter-wave frequency band, which is capable of reducing series resistance and enhancing a Q-factor by using a plurality of island-like gates seated in a well region of a substrate and gate contacts directly over the gates, and a method of fabricating the MOS varactor. The MOS varactor include: island-like gate insulating layers which are arranged at equal intervals in the form of a (n×m) matrix (where, n and m are integers equal to or larger than one), and a gate electrode of a first height (t1) placed on the gate insulating layers in a well region of a substrate; a gate contact which contacts the gate electrode; a first metal wire of a second height (t2) (where, t1
摘要翻译：本发明提供一种用于毫米波频带的电路和元件的MOS可变电抗器，其能够通过使用位于一个或多个的区域中的多个岛状门来降低串联电阻并提高Q因子衬底和栅极直接连接在栅极上，以及制造MOS变容二极管的方法。 MOS变容二极管包括：以（n×m）矩阵（其中，n和m为1以上的整数）等间隔配置的岛状栅极绝缘层，以及栅电极第一高度（t1）放置在衬底的阱区域中的栅极绝缘层上; 接触栅电极的栅极接触; 电连接到栅极触点的第二高度（t2）（其中，t1

6. 发明申请

US20090267706A1 RESONATOR AND FABRICATION METHOD THEREOF 有权
标题翻译：谐振器及其制造方法
公开(公告)号：US20090267706A1
公开(公告)日：2009-10-29
申请号：US12388157
申请日：2009-02-18
申请人： Yun-kwon PARK , Byeoung-Ju Ha , Byeong-Kwon Ku , Jae-Sung Rieh , In-Sang Song , Jin-Woo Lee , Jea-shik Shin , Young-Min Park
发明人： Yun-kwon PARK , Byeoung-Ju Ha , Byeong-Kwon Ku , Jae-Sung Rieh , In-Sang Song , Jin-Woo Lee , Jea-shik Shin , Young-Min Park
IPC分类号： H03H9/00 , G03F7/20
CPC分类号： H03H9/462 , B81B2201/0271 , B81C1/00142 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H03H3/0072 , H03H9/2463
摘要： A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.
摘要翻译：提供了一种谐振器制造方法。一种方法包括使用纳米压印技术在基板上提供彼此分离的多个电极图案; 以及形成连接到多个电极图案的延伸电极图案，并且形成跨越延伸的电极图案的纳米结构。因此，纳米机电系统（NEMS）谐振器容易在纳米级制造。

7. 发明申请

US20090184783A1 RESONANT STRUCTURE COMPRISING WIRE, RESONANT TUNNELING TRANSISTOR, AND METHOD FOR FABRICATING THE RESONANT STRUCTURE 有权
标题翻译：包含线，谐振隧道晶体管的谐振结构和用于制造谐振结构的方法
公开(公告)号：US20090184783A1
公开(公告)日：2009-07-23
申请号：US12357681
申请日：2009-01-22
申请人： Yun-kwon Park , Sung-Woo Hwang , Jea-Shik Shin , Byeoung-Ju Ha , Jae-Sung Rieh , In-Sang Song , Yong-Kyu Kim , Byeong-Kwon Ju , Hee-Tae Kim
发明人： Yun-kwon Park , Sung-Woo Hwang , Jea-Shik Shin , Byeoung-Ju Ha , Jae-Sung Rieh , In-Sang Song , Yong-Kyu Kim , Byeong-Kwon Ju , Hee-Tae Kim
IPC分类号： H01P7/00 , H01L21/30
CPC分类号： H01L29/0665 , B81B2201/0271 , B81C1/00142 , B82Y10/00 , H01L29/0673 , H01L29/068 , H01L29/49 , H01L29/78 , Y10S977/936 , Y10S977/937 , Y10S977/938
摘要： A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and which resonates the wire unit, and a potential barrier unit which is formed on the wire unit and which provides a negative resistance component. Accordingly, transduction efficiency can be enhanced.
摘要翻译：提供了一种谐振结构，包括第一端子，面向第一端子的第二端子，连接第一端子和第二端子的导线单元，与导线单元隔开一定距离的第三端子，以及使导线单元谐振，以及形成在导线单元上并提供负电阻分量的势垒单元。因此，可以提高转导效率。

8. 发明申请

US20050199908A1 METHOD OF BASE FORMATION IN A BICMOS PROCESS 失效
标题翻译： BICMOS过程中基质形成的方法
公开(公告)号：US20050199908A1
公开(公告)日：2005-09-15
申请号：US10708598
申请日：2004-03-13
申请人： Peter Geiss , Marwan Khater , Qizhi Liu , Randy Mann , Robert Purtell , BethAnn Rainey , Jae-Sung Rieh , Andreas Stricker
发明人： Peter Geiss , Marwan Khater , Qizhi Liu , Randy Mann , Robert Purtell , BethAnn Rainey , Jae-Sung Rieh , Andreas Stricker
IPC分类号： H01L21/28 , H01L21/331 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L29/417 , H01L29/73 , H01L29/732 , H01L29/737 , H01L31/072 , H01L31/109
CPC分类号： H01L29/66242 , H01L21/28518 , H01L21/8249 , H01L27/0623 , H01L29/0804 , H01L29/456 , H01L29/7371
摘要： Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.
摘要翻译：提供了制造具有凸起非本征基极的异质结双极晶体管的方法，其中通过在以自对准方式延伸到发射极区域的凸起的外部基极之上形成硅化物来降低基极电阻。在形成凸起的外基之后，将硅化物形成结合到BiCMOS工艺流程中。本发明还提供了一种异质结双极晶体管，其具有凸起的外部基极和位于凸起外部基极顶部的硅化物。凸起的外基极上面的硅化物以自对准的方式延伸到发射极。发射极通过间隔物与硅化物分离。

9. 发明申请

US20120126327A1 RESONATOR HAVING TERMINALS AND A METHOD FOR MANUFACTURING THE RESONATOR 有权
标题翻译：具有端子的谐振器和用于制造谐振器的方法
公开(公告)号：US20120126327A1
公开(公告)日：2012-05-24
申请号：US13302091
申请日：2011-11-22
申请人： In Sang SONG , Sung Woo HWANG , Yun Kwon PARK , Byeong Kwon JU , Jae Sung RIEH , Jea Shik SHIN , Hee Tae KIM
发明人： In Sang SONG , Sung Woo HWANG , Yun Kwon PARK , Byeong Kwon JU , Jae Sung RIEH , Jea Shik SHIN , Hee Tae KIM
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0676 , B82Y10/00 , B82Y40/00 , H01L29/1033 , H01L29/413 , H01L29/42376 , H01L29/4238 , H01L29/66439 , H01L29/785 , H03D1/18 , H03D3/26 , H03D7/12 , H03H2009/02314
摘要： A resonator and a method for manufacturing a resonator are provided. The method may include doping a wafer, and forming on the wafer a substrate, a drain electrode, a source electrode, a gate electrode, and at least one nanowire.
摘要翻译：提供了一种用于制造谐振器的谐振器和方法。该方法可以包括掺杂晶片，以及在晶片上形成衬底，漏电极，源电极，栅电极和至少一个纳米线。

10. 发明授权

US07989868B2 MOS varactor and fabricating method of the same 有权
标题翻译： MOS变容二极管及其制造方法相同
公开(公告)号：US07989868B2
公开(公告)日：2011-08-02
申请号：US12565197
申请日：2009-09-23
申请人： Jae-Sung Rieh , Yong Ho Oh , Sue Yeon Kim , Seung Yong Lee
发明人： Jae-Sung Rieh , Yong Ho Oh , Sue Yeon Kim , Seung Yong Lee
IPC分类号： H01L21/00
CPC分类号： H01L29/93 , H01L29/66174
摘要： A MOS varactor for use in circuits and elements of a millimeter-wave frequency band, which is capable of reducing series resistance and enhancing a Q-factor by using a plurality of island-like gates seated in a well region of a substrate and gate contacts directly over the gates, includes: gate insulating layers arranged at equal intervals in the form of a (n×m) matrix, and a gate electrode placed on the gate insulating layers in a well region of a substrate; a gate contact which contacts the gate electrode; a first metal wire, which is electrically connected to the gate contact; source/drain contacts arranged at equal intervals in a matrix to form apexes of a square centered at the gate electrode and contact a doping region except for the bottom of the gate insulating layers; and a second metal wire, which is electrically connected to the source/drain contacts.
摘要翻译：一种用于毫米波频带的电路和元件的MOS变容二极管，其能够通过使用位于衬底的阱区域中的多个岛状栅极和栅极触点来降低串联电阻并增强Q因子包括：以（n×m）矩阵形式等间隔布置的栅极绝缘层，以及设置在衬底的阱区中的栅极绝缘层上的栅电极; 接触栅电极的栅极接触; 电连接到栅极触点的第一金属线; 源极/漏极触点以等间隔布置在矩阵中以形成以栅电极为中心的正方形的顶点，并且接触除了栅极绝缘层的底部之外的掺杂区域; 以及电连接到源极/漏极触点的第二金属线。

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