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1. 发明授权

US09136432B2 High efficiency light emitting diode 有权
标题翻译：高效率发光二极管
公开(公告)号：US09136432B2
公开(公告)日：2015-09-15
申请号：US13997873
申请日：2011-12-06
申请人： Jun Ho Yun , Ki Bum Nam , Joon Hee Lee , Chang Youn Kim , Hong Jae Yoo , Sung Hoon Hong
发明人： Jun Ho Yun , Ki Bum Nam , Joon Hee Lee , Chang Youn Kim , Hong Jae Yoo , Sung Hoon Hong
IPC分类号： H01L33/14 , H01L33/38 , H01L33/40 , H01L33/00 , H01L33/22 , H01L33/44
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/44
摘要： Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×1018/cm3 and a thickness in the range of 5 to 10 um.
摘要翻译：本文公开了一种高效率发光二极管。发光二极管包括：位于支撑衬底上的半导体堆叠; 反射金属层，位于所述支撑基板和所述半导体堆叠之间，以与所述半导体堆叠的p型化合物半导体层欧姆接触并具有暴露所述半导体叠层的沟槽; 位于所述半导体叠层的n型化合物半导体层上的第一电极焊盘; 电极延伸部，其从所述第一电极焊盘延伸并定位在所述沟槽区域上; 以及介于所述第一电极焊盘和所述半导体堆叠之间的上绝缘层。此外，n型化合物半导体层包括n型接触层，n型接触层的Si掺杂浓度为5〜7×1018 / cm3，厚度为5〜10μm。

2. 发明授权

US08975138B2 Method of creating a maskless air gap in back end interconnects with double self-aligned vias 有权
标题翻译：在具有双自对准通孔的后端互连中产生无掩蔽气隙的方法
公开(公告)号：US08975138B2
公开(公告)日：2015-03-10
申请号：US13931219
申请日：2013-06-28
申请人： Manish Chandhok , Hui Jae Yoo , Yan A. Borodovsky , Florian Gstrein , David N. Shykind , Kevin L. Lin
发明人： Manish Chandhok , Hui Jae Yoo , Yan A. Borodovsky , Florian Gstrein , David N. Shykind , Kevin L. Lin
IPC分类号： H01L21/336 , H01L21/461 , H01L21/8234 , H01L23/535 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/32133 , H01L21/32139 , H01L21/76802 , H01L21/7682 , H01L21/76877 , H01L21/76879 , H01L21/76883 , H01L21/76885 , H01L21/76886 , H01L21/76897 , H01L23/5222 , H01L23/528 , H01L23/53209 , H01L23/53271 , H01L23/5329 , H01L23/53295 , H01L23/535 , H01L2924/0002 , H01L2924/00
摘要： A method including patterning a thickness dimension of an interconnect material into a thickness dimension for a wiring line with one or more vias extending from the wiring line and introducing a dielectric material on the interconnect material. A method including depositing and patterning an interconnect material into a wiring line and one or more vias; and introducing a dielectric material on the interconnect material such that the one or more vias are exposed through the dielectric material. An apparatus including a first interconnect layer in a first plane and a second interconnect in a second plane on a substrate; and a dielectric layer separating the first and second interconnect layers, wherein the first interconnect layer comprises a monolith including a wiring line and at least one via, the at least one via extending from the wiring line to a wiring line of the second interconnect layer.
摘要翻译：一种方法，包括将互连材料的厚度尺寸图案化为具有从布线延伸的一个或多个通孔的布线的厚度尺寸，并将介电材料引入到互连材料上。一种包括将互连材料沉积和图案化成布线和一个或多个通孔的方法; 以及在所述互连材料上引入介电材料，使得所述一个或多个通孔通过所述介电材料暴露。一种装置，包括在第一平面中的第一互连层和在衬底上的第二平面中的第二互连; 以及分离所述第一和第二互连层的电介质层，其中所述第一互连层包括包括布线和至少一个通孔的整体，所述至少一个通孔从所述布线延伸到所述第二互连层的布线。

3. 发明申请

US20140017827A1 APPARATUS AND METHOD FOR MANUFACTURING A LIGHT-EMITTING DEVICE USING A NEUTRAL PARTICLE BEAM 有权
标题翻译：使用中性粒子束制造发光装置的装置和方法
公开(公告)号：US20140017827A1
公开(公告)日：2014-01-16
申请号：US14006937
申请日：2011-05-30
申请人： Suk Jae Yoo , Seong Bong Kim
发明人： Suk Jae Yoo , Seong Bong Kim
IPC分类号： C30B25/02 , H01L21/02
CPC分类号： H01L21/0257 , C30B25/02 , C30B25/105 , C30B29/406 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L21/02656 , H01L21/67161 , H01L21/67207 , H01L33/0066
摘要： The present invention relates to an apparatus and method for manufacturing a semiconductor light-emitting device using a neutral particle beam. According to the present invention, since the kinetic energy of the neutral particle beam is provided as a portion of the reaction energy for causing a nitride semiconductor single crystal thin film to be formed on a substrate, and the reaction energy is not provided as heat energy by heating a substrate as in the prior art, the substrate may be treated at a relatively low temperature. Furthermore, elements such as Si, Mg, and the like, which are solid elements required for doping are sprayed onto the substrate from a source which generates solid elements for doping together with the neutral particle beam to achieve high doping efficiency at a lower temperature. According to the present invention, since the substrate is treated at a low temperature, the degradation of the substrate and thin film may be prevented, and the undesired diffusion of the doping elements may be prevented to enable the manufacture of the semiconductor light-emitting device having superior light-emitting properties in a relatively easy manner.
摘要翻译：本发明涉及使用中性粒子束制造半导体发光装置的装置和方法。根据本发明，由于中性粒子束的动能作为用于使衬底上形成氮化物半导体单晶薄膜的反应能量的一部分而提供，反应能量不能作为热能通过像现有技术那样加热衬底，衬底可以在相对低的温度下进行处理。此外，作为掺杂所需的固体元素的Si，Mg等元素，由生成与中性粒子束一起掺杂的固体元素的源喷射到基板上，以在较低的温度下实现高的掺杂效率。根据本发明，由于在低温下处理基板，可以防止基板和薄膜的劣化，并且可以防止掺杂元件的不期望的扩散，从而能够制造半导体发光器件以相对容易的方式具有优异的发光特性。

4. 发明授权

US08558246B2 Light emitting diode, method for fabricating phosphor layer, and lighting apparatus 有权
标题翻译：发光二极管，荧光体层的制造方法以及照明装置
公开(公告)号：US08558246B2
公开(公告)日：2013-10-15
申请号：US12964326
申请日：2010-12-09
申请人： Jin Ha Kim , Kyu Sang Kim , Jae Yoo Jeong , Chung Bae Jeon
发明人： Jin Ha Kim , Kyu Sang Kim , Jae Yoo Jeong , Chung Bae Jeon
IPC分类号： H01L27/15 , H01L29/267 , H01L31/12 , H01L33/00
CPC分类号： H01L33/505 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2933/0041 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A light emitting diode includes: a light emitting diode chip including a substrate and a light emission structure disposed on the substrate; and a phosphor layer formed to cover at least one surface of a diode upper surface and a diode lower surface, when a surface formed by the light emitting diode chip, when viewed from above the light emission structure, is defined as the diode upper surface and a surface formed by the light emitting diode chip, when viewed from below the substrate is defined as the diode lower surface. The phosphor layer is formed in a manner such that the phosphor layer does not deviate from the diode upper surface or the diode lower surface and has a flat surface parallel to the diode upper surface or the diode lower surface and a curved surface connecting the flat surface to corners of the diode upper surface or the diode lower surface.
摘要翻译：发光二极管包括：发光二极管芯片，其包括基板和布置在基板上的发光结构; 以及形成为覆盖二极管上表面和二极管下表面的至少一个表面的荧光体层，当从发光结构的上方观察时，当由发光二极管芯片形成的表面被定义为二极管上表面时，当从基板下面观察时，由发光二极管芯片形成的表面被定义为二极管下表面。荧光体层以这样的方式形成，使得荧光体层不从二极管上表面或二极管下表面偏离并且具有平行于二极管上表面或二极管下表面的平坦表面和连接平坦表面的曲面到二极管上表面或二极管下表面的拐角处。

5. 发明申请

US20130148101A1 TECHNIQUE FOR DISPLAYING SHAPE OF ROAD SURFACE AND METHOD THEREOF 审中-公开
标题翻译：用于显示道路表面形状的技术及其方法
公开(公告)号：US20130148101A1
公开(公告)日：2013-06-13
申请号：US13470786
申请日：2012-05-14
申请人： Kyung Ho Yoo , Hui Sung Lee , Hyun Jae Yoo
发明人： Kyung Ho Yoo , Hui Sung Lee , Hyun Jae Yoo
IPC分类号： G01C3/08
CPC分类号： G01S17/89 , G01S13/931 , G01S2013/9357 , G01S2013/9375
摘要： Disclosed is a technique for displaying a shape of a road surface in front of a vehicle. The technique includes a beam emitter that emits one or more beams onto a predetermined layer toward a road surface in front of a vehicle. A beam receiver receives the one or more beams reflected from each layer after emitting the beams from the beam emitter, and a distance calculator calculates the distance to each layer respectively based on the amount of time that it takes for the one or more beams emitted from the beam emitter to be reflected. A shape determinator determines the shape of the road surface using a relationship between the distances of each layer and a display unit displays the shape of the road surface accordingly.
摘要翻译：公开了一种用于在车辆前方显示路面形状的技术。该技术包括射束发射器，其将一个或多个射束发射到在车辆前面的路面上的预定层上。光束接收器在从光束发射器发射光束之后接收从每个层反射的一个或多个光束，并且距离计算器分别基于从一个或多个光束发出的一个或多个光束所花费的时间量来计算到每个层的距离光束发射器被反射。形状确定器使用各层的距离之间的关系来确定路面的形状，并且显示单元相应地显示路面的形状。

6. 发明授权

US08461683B2 Self-forming, self-aligned barriers for back-end interconnects and methods of making same 有权
标题翻译：用于后端互连的自成型，自对准屏障及其制造方法
公开(公告)号：US08461683B2
公开(公告)日：2013-06-11
申请号：US13078683
申请日：2011-04-01
申请人： Hui Jae Yoo , Jeffery D. Bielefeld , Sean W. King , Sridhar Balakrishnan
发明人： Hui Jae Yoo , Jeffery D. Bielefeld , Sean W. King , Sridhar Balakrishnan
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40 , H01L23/485
CPC分类号： H01L21/76834 , H01L21/2855 , H01L21/32053 , H01L21/76832 , H01L21/76835 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76855 , H01L21/76864 , H01L21/76867 , H01L21/76897 , H01L23/485 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , Y10S438/927 , H01L2924/00
摘要： Processes of forming an insulated wire into an interlayer dielectric layer (ILD) of a back-end metallization includes thermally treating a metallic barrier precursor under conditions to cause at least one alloying element in the barrier precursor to form a dielectric barrier between the wire and the ILD. The dielectric barrier is therefore a self-forming, self-aligned barrier. Thermal processing is done under conditions to cause the at least one alloying element to migrate from a zone of higher concentration thereof to a zone of lower concentration thereof to further form the dielectric barrier. Various apparatus are made by the process.
摘要翻译：在后端金属化的层间电介质层（ILD）中形成绝缘线的工艺包括在使阻挡前体中的至少一个合金元素引起的金属屏障前体之间形成电介质势垒 ILD。因此，介电阻挡层是自形成的自对准势垒。热处理在使至少一种合金元素从其较高浓度的区域迁移到其较低浓度的区域的条件下进行以进一步形成电介质阻挡层。通过该方法制造各种装置。

7. 发明申请

US20120122312A1 METHODS FOR FORMING PLANARIZED HERMETIC BARRIER LAYERS AND STRUCTURES FORMED THEREBY 有权
标题翻译：形成平面化掩膜层的方法及其形成的结构
公开(公告)号：US20120122312A1
公开(公告)日：2012-05-17
申请号：US13276062
申请日：2011-10-18
申请人： Sean W. King , Hui Jae Yoo
发明人： Sean W. King , Hui Jae Yoo
IPC分类号： H01L21/768 , H01L21/31
CPC分类号： H02J7/0045 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76837 , H01L21/76849 , H01L21/76867 , H01L21/76883
摘要： Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise forming a conductive material in an interconnect opening within an interlayer dielectric material that is disposed on a substrate, forming a low density dielectric material on a surface of the dielectric layer and on a surface of the conductive material, and forming a high density dielectric barrier layer on the low density dielectric layer.
摘要翻译：描述了形成微电子结构的方法和相关结构。这些方法可以包括在布置在基板上的层间电介质材料中的互连开口中形成导电材料，在电介质层的表面和导电材料的表面上形成低密度电介质材料，并形成高密度介电阻挡层在低密度电介质层上。

8. 发明申请

US20110133220A1 LIGHT EMITTING DIODE, METHOD FOR FABRICATING PHOSPHOR LAYER, AND LIGHTING APPARATUS 有权
标题翻译：发光二极管，制造磷光体层的方法和照明装置
公开(公告)号：US20110133220A1
公开(公告)日：2011-06-09
申请号：US12964326
申请日：2010-12-09
申请人： Jin Ha KIM , Kyu Sang Kim , Jae Yoo Jeong , Chung Bae Jeon
发明人： Jin Ha KIM , Kyu Sang Kim , Jae Yoo Jeong , Chung Bae Jeon
IPC分类号： H01L33/16 , H01L33/40 , H01L33/00
CPC分类号： H01L33/505 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2933/0041 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A light emitting diode includes: a light emitting diode chip including a substrate and a light emission structure disposed on the substrate; and a phosphor layer formed to cover at least one surface of a diode upper surface and a diode lower surface, when a surface formed by the light emitting diode chip, when viewed from above the light emission structure, is defined as the diode upper surface and a surface formed by the light emitting diode chip, when viewed from below the substrate is defined as the diode lower surface. The phosphor layer is formed in a manner such that the phosphor layer does not deviate from the diode upper surface or the diode lower surface and has a flat surface parallel to the diode upper surface or the diode lower surface and a curved surface connecting the flat surface to corners of the diode upper surface or the diode lower surface.
摘要翻译：发光二极管包括：发光二极管芯片，其包括基板和布置在基板上的发光结构; 以及形成为覆盖二极管上表面和二极管下表面的至少一个表面的荧光体层，当从发光结构的上方观察时，当由发光二极管芯片形成的表面被定义为二极管上表面时，当从基板下面观察时，由发光二极管芯片形成的表面被定义为二极管下表面。荧光体层以这样的方式形成，使得荧光体层不从二极管上表面或二极管下表面偏离并且具有平行于二极管上表面或二极管下表面的平坦表面和连接平坦表面的曲面到二极管上表面或二极管下表面的拐角处。

9. 发明授权

US07915147B2 Group III nitride compound semiconductor device 有权
标题翻译： III族氮化物化合物半导体器件
公开(公告)号：US07915147B2
公开(公告)日：2011-03-29
申请号：US12212254
申请日：2008-09-17
申请人： Jae Bin Choi , Hong Jae Yoo
发明人： Jae Bin Choi , Hong Jae Yoo
IPC分类号： H01L21/20
CPC分类号： H01L21/02505 , H01L21/02378 , H01L21/02387 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/0254 , H01L21/0262
摘要： Disclosed is a group III nitride compound semiconductor device having a substrate, buffer layers on the substrate, and a group III nitride compound semiconductor layer on the top layer of the buffer layers. The buffer layers comprises a first buffer layer formed on the substrate and a second buffer layer formed on the first buffer layer. The first buffer layer is made of transition metal nitride, and the second buffer layer is made of nitride of gallium and a transition metal.
摘要翻译：公开了具有衬底，衬底上的缓冲层和缓冲层顶层上的III族氮化物化合物半导体层的III族氮化物化合物半导体器件。缓冲层包括形成在基板上的第一缓冲层和形成在第一缓冲层上的第二缓冲层。第一缓冲层由过渡金属氮化物制成，第二缓冲层由镓和过渡金属的氮化物制成。

10. 发明申请

US20100128307A1 HOST APPARATUS AND SYSTEM TO CONTROL DUPLEX PRINTING AND METHOD THEREOF 有权
标题翻译：控制双重打印的主机和系统及其方法
公开(公告)号：US20100128307A1
公开(公告)日：2010-05-27
申请号：US12558639
申请日：2009-09-14
申请人： Hyung-jae YOO
发明人： Hyung-jae YOO
IPC分类号： G06F3/12
CPC分类号： H04N1/00681 , G06F3/1205 , G06F3/1211 , G06F3/1221 , G06F3/125 , G06F3/1284 , H04N1/00694 , H04N1/00779 , Y02D10/1592
摘要： A method of controlling duplex printing and a host apparatus and a system for performing the method. The method includes determining whether a number of total printing pages of printing data is an even number or an odd number, generating a printing command with respect to the printing data based on the result of determination, and transmitting the generated printing command and the printing data to an image forming apparatus.
摘要翻译：一种控制双面打印的方法和一种主机装置以及用于执行该方法的系统。该方法包括确定打印数据的总打印页数是偶数还是奇数，根据确定结果生成关于打印数据的打印命令，并且发送所生成的打印命令和打印数据涉及图像形成装置。

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