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1. 发明授权

US07301142B2 Optical encoder photodetector array with multiple resolutions 有权
标题翻译：具有多种分辨率的光学编码器光电探测器阵列
公开(公告)号：US07301142B2
公开(公告)日：2007-11-27
申请号：US11499696
申请日：2006-08-07
申请人： Koichi Shichi , Isamu Ohkubo
发明人： Koichi Shichi , Isamu Ohkubo
IPC分类号： G01D5/34
CPC分类号： H03M1/301 , G01D5/36 , H03M1/485
摘要： A photodetector for an optical encoder has plural sets of segmented photodiodes, each set of which is made by two adjoining segmented photodiodes capable of coping with a scale slit having a reference resolution. Output lines of the two adjoining segmented photodiodes are connected together in each set of the photodiodes. These output lines are connected to output lines of the corresponding segmented photodiodes in the other sets. The two adjoining segmented photodiodes function like one segmented photodiode, and thereby, the resolution of the applied scale slit is made ½ of the reference resolution. Thus, this photodetector easily copes with a scale slit having a half resolution of the reference resolution at low cost only by modification of wiring without changing any configuration of the segmented photodiodes.
摘要翻译：用于光学编码器的光电检测器具有多组分段光电二极管，每组由两个相邻的分段光电二极管制成，能够对准具有参考分辨率的刻度狭缝。两个相邻的分段光电二极管的输出线在每组光电二极管中连接在一起。这些输出线连接到其他组中对应的分段光电二极管的输出线。两个相邻的分段光电二极管的功能类似于一个分段的光电二极管，因此，施加的刻度狭缝的分辨率为参考分辨率的1/2。因此，该光电检测器仅通过修改布线而容易地处理具有参考分辨率的半分辨率的刻度狭缝，而不改变分段光电二极管的任何配置。

2. 发明申请

US20050045979A1 Light receiving device circuit-built-in type light receiving unit and optical disk unit 审中-公开
标题翻译：光接收装置电路内置型光接收单元和光盘单元
公开(公告)号：US20050045979A1
公开(公告)日：2005-03-03
申请号：US10497242
申请日：2002-11-29
申请人： Tatsuya Morioka , Shigeki Hayashida , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
发明人： Tatsuya Morioka , Shigeki Hayashida , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
IPC分类号： H01L31/0216 , H01L31/103 , H01L27/14
CPC分类号： H01L31/02161 , H01L31/103 , H01L31/1035
摘要： A first P-type diffusion layer and a P-type semiconductor layer are provided on a silicon substrate, and two N-type diffusion layers are provided on a front surface of this P-type semiconductor layer to form two light receiving units. Three-layer translucent films, a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are disposed on the N-type diffusion layers and on the P-type semiconductor layer between the two diffusion layers. Holes produced during a production process and distributed and captured in two interfaces between the three-layer translucent films can reduce a field intensity in the vicinity of the surface of the P-type semiconductor layer to below a conventional level and an inversion of a conductive type to reduce a leak current between the light receiving units accordingly.
摘要翻译：在硅衬底上设置第一P型扩散层和P型半导体层，在该P型半导体层的前表面上设置两个N型扩散层，以形成两个光接收单元。三层半透膜，第一氧化硅膜，氮化硅膜和第二氧化硅膜设置在两个扩散层之间的N型扩散层和P型半导体层上。在生产过程中产生的并且在三层半透明膜之间的两个界面中分布和捕获的孔可以将P型半导体层的表面附近的场强降低到传统水平以下并导致导通型以相应地减小光接收单元之间的泄漏电流。

3. 发明授权

US06404029B1 Light sensitive element and light sensitive element having internal circuitry 有权
标题翻译：具有内部电路的光敏元件和光敏元件
公开(公告)号：US06404029B1
公开(公告)日：2002-06-11
申请号：US09656461
申请日：2000-09-06
申请人： Makoto Hosokawa , Naoki Fukunaga , Takahiro Takimoto , Masaru Kubo , Toshihiko Fukushima , Isamu Ohkubo
发明人： Makoto Hosokawa , Naoki Fukunaga , Takahiro Takimoto , Masaru Kubo , Toshihiko Fukushima , Isamu Ohkubo
IPC分类号： H01L2714
CPC分类号： H01L27/1443 , H01L31/0352
摘要： A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of the semiconductor substrate. A second semiconductor layer, of a second conductivity type, is formed on the first semiconductor layer and at least one diffusion layer of the first conductivity type is formed from the surface of the second semiconductor layer so as to reach the surface of the first semiconductor layer. The diffusion layer subdivides the second semiconductor layer into a plurality of semiconductor regions At least one photodiode portion for converting signal light into an electrical signal is formed at a junction between at least one of the plurality of semiconductor regions and the first semiconductor layer. A depletion layer which is formed in the first semiconductor layer when a reverse bias voltage is applied to the at least one photodiode portion has a field intensity of about 0.3 V/&mgr;m or more.
摘要翻译：光敏器件包括半导体衬底和第一半导体层，它们都是第一导电型，半导体层形成在半导体衬底上，杂质浓度低于半导体衬底的半导体层。第二导电类型的第二半导体层形成在第一半导体层上，并且从第二半导体层的表面形成至少一个第一导电类型的扩散层，以到达第一半导体层的表面。扩散层将第二半导体层细分为多个半导体区域在多个半导体区域和第一半导体层中的至少一个之间的接合处形成至少一个用于将信号光转换成电信号的光电二极管部分。当向至少一个光电二极管部分施加反向偏置电压时，在第一半导体层中形成的耗尽层具有约0.3V / m 2以上的场强度。

4. 发明授权

US06380603B1 Photosensitive device with internal circuitry that includes on the same substrate 失效
标题翻译：具有包含在同一基板上的内部电路的感光装置
公开(公告)号：US06380603B1
公开(公告)日：2002-04-30
申请号：US09707158
申请日：2000-11-07
申请人： Takahiro Takimoto , Toshihiko Fukushima , Isamu Ohkubo , Makoto Hosokawa , Masaru Kubo
发明人： Takahiro Takimoto , Toshihiko Fukushima , Isamu Ohkubo , Makoto Hosokawa , Masaru Kubo
IPC分类号： H01L3106
CPC分类号： H01L31/02024 , H01L27/144
摘要： A semiconductor device includes: a photosensitive section essentially composed of a PN junction between a semiconductor multilayer structure of the first conductivity type and a first semiconductor layer of the second conductivity type; and a partitioning portion for splitting the photosensitive section into a plurality of regions. The semiconductor multilayer structure of the first conductivity type includes: a semiconductor substrate of the first conductivity type; a first semiconductor layer of the first conductivity type; and a second semiconductor layer of the first conductivity type. The partitioning portion includes a third semiconductor layer of the first conductivity type extending from the first semiconductor layer of the second conductivity type so as to reach the second semiconductor layer of the first conductivity type.
摘要翻译：半导体器件包括：基本上由第一导电类型的半导体多层结构和第二导电类型的第一半导体层之间的PN结组成的感光部分; 以及用于将感光部分分成多个区域的分隔部分。第一导电类型的半导体多层结构包括：第一导电类型的半导体衬底; 第一导电类型的第一半导体层; 和第一导电类型的第二半导体层。分隔部分包括从第二导电类型的第一半导体层延伸的第一导电类型的第三半导体层，以到达第一导电类型的第二半导体层。

5. 发明申请

US20060266931A1 Photodetector for optical encoder 有权
标题翻译：光学编码器光电探测器
公开(公告)号：US20060266931A1
公开(公告)日：2006-11-30
申请号：US11499696
申请日：2006-08-07
申请人： Koichi Shichi , Isamu Ohkubo
发明人： Koichi Shichi , Isamu Ohkubo
IPC分类号： H01J40/14 , G01D5/34
CPC分类号： H03M1/301 , G01D5/36 , H03M1/485
摘要： A photodetector for an optical encoder has plural sets of segmented photodiodes, each set of which is made by two adjoining segmented photodiodes capable of coping with a scale slit having a reference resolution. Output lines of the two adjoining segmented photodiodes are connected together in each set of the photodiodes. These output lines are connected to output lines of the corresponding segmented photodiodes in the other sets. The two adjoining segmented photodiodes function like one segmented photodiode, and thereby, the resolution of the applied scale slit is made ½ of the reference resolution. Thus, this photodetector easily copes with a scale slit having a half resolution of the reference resolution at low cost only by modification of wiring without changing any configuration of the segmented photodiodes.
摘要翻译：用于光学编码器的光电检测器具有多组分段光电二极管，每组由两个相邻的分段光电二极管制成，能够对准具有参考分辨率的刻度狭缝。两个相邻的分段光电二极管的输出线在每组光电二极管中连接在一起。这些输出线连接到其他组中对应的分段光电二极管的输出线。两个相邻的分段光电二极管的功能类似于一个分段的光电二极管，因此，施加的刻度狭缝的分辨率为参考分辨率的1/2。因此，该光电检测器仅通过修改布线而容易地处理具有参考分辨率的半分辨率的刻度狭缝，而不改变分段光电二极管的任何配置。

6. 发明授权

US07098489B2 Split type light receiving element and circuit-built-in light-receiving element and optical disk drive 失效
标题翻译：分体式光接收元件和电路内置光接收元件和光盘驱动器
公开(公告)号：US07098489B2
公开(公告)日：2006-08-29
申请号：US10483493
申请日：2002-07-03
申请人： Tatsuya Morioka , Shigeki Hayashida , Yoshihiko Tani , Isamu Ohkubo
发明人： Tatsuya Morioka , Shigeki Hayashida , Yoshihiko Tani , Isamu Ohkubo
IPC分类号： H01L29/205
CPC分类号： H01L31/103
摘要： A plurality of N-type diffusion layers are formed a specified distance apart on a P-type semiconductor layer. A P-type leak prevention layer formed between at least N-type diffusion layers prevents leaking between the diffusion layers. A dielectric film is formed in at least a light incident area on a P-type semiconductor layer including the diffusion layers and the leak prevention layer. Accordingly, provided are a split type light receiving element positively functioning as a split type light receiving element even when charge is accumulated in the dielectric film and having a uniform sensitivity throughout the entire area on a light receiving surface, and a circuit-built-in light receiving element and an optical disk device using the split type light receiving element.
摘要翻译：多个N型扩散层在P型半导体层上分开规定距离地形成。形成在至少N型扩散层之间的P型防漏层防止了扩散层之间的泄漏。在包括扩散层和防漏层的P型半导体层的至少入射光区域中形成介电膜。因此，即使在电介质膜中积累电荷并且在光接收表面上的整个区域具有均匀的灵敏度的情况下，提供了作为分割型光接收元件的分体式光接收元件，并且电路内置光接收元件和使用分离式光接收元件的光盘装置。

7. 发明授权

US06949809B2 Light receiving element, light detector with built-in circuitry and optical pickup 失效
标题翻译：光接收元件，具有内置电路和光学拾取器的光检测器
公开(公告)号：US06949809B2
公开(公告)日：2005-09-27
申请号：US10283323
申请日：2002-10-30
申请人： Takahiro Takimoto , Isamu Ohkubo , Masaru Kubo , Hiroki Nakamura , Toshihiko Fukushima , Toshifumi Yoshikawa
发明人： Takahiro Takimoto , Isamu Ohkubo , Masaru Kubo , Hiroki Nakamura , Toshihiko Fukushima , Toshifumi Yoshikawa
IPC分类号： H01L27/14 , G01J1/02 , G11B7/00 , H01L31/00 , H01L31/06 , H01L31/10 , H01L31/103
CPC分类号： H01L31/103 , G11B7/13
摘要： A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor structure, a second, second conductivity type semiconductor layer having an impurity concentration lower than that of the first, second conductivity type semiconductor layer, a second, first conductivity type semiconductor layer provided on the second, second conductivity type semiconductor layer, or a second, first conductivity type semiconductor layer provided within the second, second conductivity type semiconductor layer.
摘要翻译：一种光接收元件，包括半导体结构，该半导体结构至少包括第一导电类型半导体层，设置在半导体结构中的第一导电类型半导体层上的第一，第二导电类型半导体层，第二导电类型半导体层，杂质浓度低于第一，第二导电类型半导体层，第二导电类型半导体层，设置在第二导电类型半导体层上的第二导电类型半导体层，或第二导电类型半导体层，型半导体层。

8. 发明授权

US06873025B2 Photodiode device including window defined in passivation layer for removing electrostatic charge 失效
标题翻译：光电二极管器件包括在钝化层中定义的窗口，用于去除静电电荷
公开(公告)号：US06873025B2
公开(公告)日：2005-03-29
申请号：US09984657
申请日：2001-10-30
申请人： Hideo Wada , Isamu Ohkubo , Kazuhiro Natsuaki , Naoki Fukunaga , Shigeki Hayashida
发明人： Hideo Wada , Isamu Ohkubo , Kazuhiro Natsuaki , Naoki Fukunaga , Shigeki Hayashida
IPC分类号： H01L27/14 , H01L29/40 , H01L29/88 , H01L31/0216 , H01L31/06 , H01L31/10
CPC分类号： H01L31/02161
摘要： A photodiode includes a first conductivity type semiconductor substrate or a first conductivity type semiconductor layer; a second conductivity type semiconductor layer provided on the first conductivity type semiconductor substrate or the first conductivity type semiconductor layer; an anti-reflection film provided on a surface of a portion of the second conductivity type semiconductor layer which is in a light receiving area; a first conductive layer provided in an area in the vicinity of the light receiving area; and a passivation layer provided on the first conductive layer. Light incident on the photodiode is detected by a junction of the one of the first conductivity type semiconductor substrate and the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer. The area in the vicinity of the light receiving area includes a window area having an opening in the passivation layer for partially exposing the first conductive layer.
摘要翻译：光电二极管包括第一导电类型半导体衬底或第一导电类型半导体层; 设置在所述第一导电型半导体基板或所述第一导电型半导体层上的第二导电型半导体层; 设置在所述第二导电型半导体层的位于光接收区域的部分的表面上的防反射膜; 设置在所述光接收区域附近的区域中的第一导电层; 以及设置在第一导电层上的钝化层。通过第一导电类型半导体衬底和第一导电类型半导体层之一以及第二导电类型半导体层的接合来检测入射在光电二极管上的光。光接收区域附近的区域包括在钝化层中具有用于部分地暴露第一导电层的开口的窗口区域。

9. 发明授权

US06600174B2 Light receiving element and semiconductor laser device 失效
公开(公告)号：US06600174B2
公开(公告)日：2003-07-29
申请号：US09757473
申请日：2001-01-11
申请人： Isamu Ohkubo , Kazuhiro Natsuaki , Naoki Fukunaga , Masaru Kubo
发明人： Isamu Ohkubo , Kazuhiro Natsuaki , Naoki Fukunaga , Masaru Kubo
IPC分类号： H01L3100
CPC分类号： H01L31/02005 , H01L23/53223 , H01L24/05 , H01L24/45 , H01L24/48 , H01L31/02161 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05644 , H01L2224/45144 , H01L2224/48463 , H01L2224/48644 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01074 , H01L2924/01079 , H01L2924/05042 , H01L2924/12042 , H01L2924/12043 , H01S5/0282 , H01S5/0425 , H01L2924/00014 , H01L2924/00
摘要： A corrosion-resistant conductive layer (TiW layer) formed of a corrosion-resistant material is formed to extend from a bonding pad portion to an interconnection portion of a light receiving element. A semiconductor laser device according to the present invention includes the light receiving element.

10. 发明授权

US06433366B1 Circuit-incorporating light receiving device and method of fabricating the same 失效
标题翻译：电路结合光接收装置及其制造方法
公开(公告)号：US06433366B1
公开(公告)日：2002-08-13
申请号：US09616961
申请日：2000-07-14
申请人： Takahiro Takimoto , Naoki Fukunaga , Isamu Ohkubo , Toshimitsu Kasamatsu , Mutsumi Oka , Masaru Kubo
发明人： Takahiro Takimoto , Naoki Fukunaga , Isamu Ohkubo , Toshimitsu Kasamatsu , Mutsumi Oka , Masaru Kubo
IPC分类号： H01L2714
CPC分类号： H01L27/144
摘要： A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.
摘要翻译：一种集成电路的光接收装置包括集成电路和光电二极管。集成电路和光电二极管设置在单个半导体衬底上。集成电路包括具有多晶硅作为发射极扩散源和电极的晶体管。包含在集成电路中的元件使用局部氧化彼此隔离。

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