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1. 发明授权

US08528499B2 Substrate processing apparatus and method 有权
标题翻译：基板加工装置及方法
公开(公告)号：US08528499B2
公开(公告)日：2013-09-10
申请号：US12934419
申请日：2009-03-27
申请人： Sung-Tae Je , Il-Kwang Yang , Chan-Yong Park
发明人： Sung-Tae Je , Il-Kwang Yang , Chan-Yong Park
IPC分类号： C23C16/00 , C23C16/50
CPC分类号： C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber (10) providing an internal space, in which a process is carried out onto a substrate; a support member (30) installed in the process chamber (10) to support the substrate; and a shower head (20) located above the support member (30) to supply a source gas toward the support member (30), wherein the shower head (20) includes a first injection surface (24) located at a position separated from the upper surface of the substrate by a first distance, and provided with outlets of first injection holes (24a) to inject the source gas; and a second injection surface (26) located at a position separated from the upper surface of the substrate by a second distance being different from the first distance, and provided with outlets of second injection holes (26a) to inject the source gas.
摘要翻译：公开了一种基板处理装置和方法。基板处理装置包括提供内部空间的处理室（10），其中进行到基板上的处理; 安装在所述处理室（10）中以支撑所述基板的支撑构件（30）以及位于所述支撑构件（30）上方以朝向所述支撑构件（30）供应源气体的淋浴喷头（20），其中所述喷淋头（20）包括位于与所述支撑构件（30）分离的位置的第一喷射表面（24）衬底的上表面第一距离，并且设置有用于喷射源气体的第一喷射孔（24a）的出口; 以及第二注入表面（26），其位于与所述基板的上表面隔开第二距离与所述第一距离不同的位置处，并且设置有用于喷射所述源气体的第二喷射孔（26a）的出口。

2. 发明申请

US20130180453A1 SUBSTRATE PROCESSING DEVICE EQUIPPED WITH SEMICIRCLE SHAPED ANTENNA 有权
标题翻译：衬底加工设备配有半成品天线
公开(公告)号：US20130180453A1
公开(公告)日：2013-07-18
申请号：US13822434
申请日：2011-10-06
申请人： Sung Tae Je , Il Kwang Yang , Byung Gyu Song , Song Hwan Park
发明人： Sung Tae Je , Il Kwang Yang , Byung Gyu Song , Song Hwan Park
IPC分类号： C23C16/50
CPC分类号： C23C16/50 , C23C16/4412 , C23C16/45504 , C23C16/45536 , C23C16/45563 , C23C16/507 , H01J37/3211 , H01J37/32449 , H01L21/02617 , H01L21/32105 , H01L21/3211 , H05H1/46 , H05H2001/4667
摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and an antenna disposed in an upper portion of the chamber to form an electric field within the chamber. The antenna includes a first antenna and a second antenna, which are disposed in rotational symmetry with respect to a preset center. The first antenna includes a first inner antenna and a first intermediate antenna which respectively have semi-circular shapes and first and second radii and are respectively disposed on one side and the other side with respect to the preset center line and a first connection antenna connecting the first inner antenna to the first intermediate antenna. The second antenna includes a second intermediate antenna and a second inner antenna which respectively have semi-circular shapes and have first and second radii and are respectively disposed on one side and the other side with respect to the center line and a second connection antenna connecting the second intermediate antenna to the second inner antenna.
摘要翻译：提供了一种基板处理装置。基板处理装置包括：进行相对于基板的处理的室，其上放置基板的基板支撑件，设置在该室内的基板支撑件，以及设置在该室的上部中的天线，以形成室内的电场。天线包括相对于预设中心旋转对称地设置的第一天线和第二天线。第一天线包括分别具有半圆形和第一和第二半径的第一内天线和第一中间天线，并且分别设置在相对于预设中心线的一侧和另一侧上，第一连接天线将第第一内天线到第一中间天线。第二天线包括分别具有半圆形并且具有第一和第二半径并且分别相对于中心线设置在一侧和另一侧的第二中间天线和第二内天线，以及连接第二天线第二中间天线到第二内天线。

3. 发明申请

US20100319855A1 SUBSTRATE SUPPORTING UNIT, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SUBSTRATE SUPPORTING UNIT 审中-公开
标题翻译：基板支撑单元，基板处理装置及其制造基板支撑单元的方法
公开(公告)号：US20100319855A1
公开(公告)日：2010-12-23
申请号：US12865373
申请日：2009-02-03
申请人： Dong-Keun Lee , Kyung-Jin Chu , Sung-Tae Je , Il-Kwang Yang
发明人： Dong-Keun Lee , Kyung-Jin Chu , Sung-Tae Je , Il-Kwang Yang
IPC分类号： C23F1/08 , B05C13/00 , C23C16/00 , B23P11/00
CPC分类号： H01L21/67103 , C23C16/4586 , Y10T29/49826
摘要： Disclosed are a substrate supporting unit, a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor (12) provided with heaters (15a, 16b) to heat a substrate placed on the susceptor (12), and including a first temperature region and a second temperature region having a higher temperature than that of the first temperature region; and a heat dissipating member (20) including a contact surface (21) being in thermal contact with the second temperature region. The heat dissipating member (20) further includes an opening (23) corresponding to the first temperature region. The heat dissipating member (20) formed in a ring shape, in which the opening (23) is surrounded with the contact surface (21), and the contact surface (21) of the heat dissipating member (20) makes thermal contact with the lower surface of the susceptor (12).
摘要翻译：公开了基板支撑单元，基板处理装置和制造基板支撑单元的方法。基板支撑单元包括设置有加热器（15a，16b）的基座（12），用于加热放置在基座（12）上的基板，并且包括第一温度区域和具有比第一温度高的温度的第二温度区域温度区; 和散热构件（20），其包括与第二温度区域热接触的接触表面（21）。散热构件（20）还包括对应于第一温度区域的开口（23）。形成为环状的散热构件（20），其中开口（23）被接触表面（21）包围，并且散热构件（20）的接触表面（21）与所述散热构件基座（12）的下表面。

4. 发明申请

US20100319621A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100319621A1
公开(公告)日：2010-12-23
申请号：US12865722
申请日：2009-02-12
申请人： Sang-Ho Woo , Il-Kwang Yang
发明人： Sang-Ho Woo , Il-Kwang Yang
IPC分类号： H01L21/205
CPC分类号： H01J37/321
摘要： A plasma processing apparatus includes a chamber providing an interior space where a process is performed upon a target; and a plasma generating unit generating an electric field in the interior space to generate plasma from a source gas supplied to the interior space. The plasma generating unit includes an upper source disposed substantially parallel to an upper surface of the chamber, an upper generator connected to the upper source to supply a first current to the upper source, a lateral source surrounding a lateral side of the chamber, and a lateral generator connected to the lateral source to supply a second current to the lateral source. The plasma generating unit further includes an upper matcher disposed between the upper generator and the upper source, and a lower matcher disposed between the lateral generator and the lateral source.
摘要翻译：一种等离子体处理装置，包括提供内部空间的室，其中对目标进行处理; 以及等离子体产生单元，其在内部空间中产生电场，以从供应到内部空间的源气体产生等离子体。等离子体产生单元包括基本上平行于室的上表面设置的上部源，连接到上部源的上部发生器，以向第一电流提供第一电流，围绕室的侧面的侧向源，以及横向发生器连接到侧向源以向侧向源提供第二电流。等离子体产生单元还包括设置在上部发生器和上部源之间的上部匹配器，以及设置在横向发生器和侧向源之间的下部匹配器。

5. 发明授权

US09564294B2 Plasma treatment apparatus and plasma antenna 有权
标题翻译：等离子体处理装置和等离子天线
公开(公告)号：US09564294B2
公开(公告)日：2017-02-07
申请号：US13126042
申请日：2009-10-26
申请人： Sang Ho Woo , Il Kwang Yang , Byung Gyu Song
发明人： Sang Ho Woo , Il Kwang Yang , Byung Gyu Song
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/3211 , H01J37/321 , H05H1/46
摘要： According to one embodiment of the present invention, a plasma treatment apparatus comprises: a chamber having an inner space in which processes for an object to be treated are performed; and an antenna which is arranged to cover the side part of the chamber, and which forms electric fields in said inner space to generate plasma from the source gas supplied in the inner space. The antenna includes a helical antenna which is formed into a helical shape from one side of the chamber toward the other side of the chamber along a first rotation direction, and which has a current flowing in the first rotation direction; an extension antenna which is connected to one end of the helical antenna positioned at said one side of the chamber, and which has a current flowing in the direction opposite to the first rotation direction; and a connection antenna for interconnecting the extension antenna and the helical antenna.
摘要翻译：根据本发明的一个实施例，等离子体处理装置包括：具有内部空间的室，在该内部空间中执行待处理物体的处理; 以及天线，其布置成覆盖所述室的侧部，并且在所述内部空间中形成电场，以从供应在所述内部空间中的所述源气体产生等离子体。天线包括螺旋天线，其从腔室的一侧朝向腔室的另一侧沿着第一旋转方向形成螺旋形状，并且具有沿第一旋转方向流动的电流; 延伸天线，其连接到位于所述室的所述一侧的所述螺旋天线的一端，并且具有沿与所述第一旋转方向相反的方向流动的电流; 以及用于互连扩展天线和螺旋天线的连接天线。

6. 发明申请

US20110021034A1 SUBSTRATE PROCESSING APPARATUS AND METHOD 有权
标题翻译：基板加工装置和方法
公开(公告)号：US20110021034A1
公开(公告)日：2011-01-27
申请号：US12934385
申请日：2009-03-23
申请人： Il-Kwang Yang
发明人： Il-Kwang Yang
IPC分类号： H01L21/46
CPC分类号： C23C16/45591 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32449
摘要： Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a chamber (10) providing an internal space, in which a process is carried out onto a substrate; a gas supply unit (40) supplying a source gas to the internal space; a coil (16) generating an electric field in the internal space to generate plasma from the source gas; and an adjustment ring (50) disposed on a flow path of the plasma toward a support member to adjust the flow of the plasma. The chamber (10) includes a process chamber (12), in which the support member is provided and the process is carried out by the plasma; and a generation chamber (14), in which the plasma is generated by the coil (16), provided on the upper surface of the process chamber (12), and the adjustment ring (50) is installed at the lower end of the generation chamber (14).
摘要翻译：公开了一种基板处理装置和方法。基板处理装置包括提供内部空间的室（10），其中进行到基板上的处理; 将源气体供给到内部空间的气体供给单元（40）线圈（16），其在所述内部空间中产生电场以从所述源气体产生等离子体; 以及调节环（50），其设置在所述等离子体的流动路径上朝向支撑构件以调节所述等离子体的流动。所述腔室（10）包括处理室（12），所述处理室（12）中设置有所述支撑构件，并且所述过程由所述等离子体进行; 以及设置在处理室（12）的上表面上的由线圈（16）产生等离子体的发生室（14），并且调节环（50）安装在生成的下端室（14）。

7. 发明申请

US20130186337A1 SUBSTRATE PROCESSING DEVICE FOR SUPPLYING REACTION GAS THROUGH SYMMETRY-TYPE INLET AND OUTLET 审中-公开
标题翻译：用于通过对称型入口和出口提供反应气的基板处理装置
公开(公告)号：US20130186337A1
公开(公告)日：2013-07-25
申请号：US13822121
申请日：2011-10-06
申请人： Sung Tae Je , Il Kwang Yang , Byung Gyu Song , Song Hwan Park
发明人： Sung Tae Je , Il Kwang Yang , Byung Gyu Song , Song Hwan Park
IPC分类号： H01L21/02
CPC分类号： H01L21/02617 , C23C16/4412 , C23C16/45504 , C23C16/45536 , C23C16/45544 , C23C16/45563 , C23C16/507 , H01J37/32449 , H01L21/32105 , H01L21/3211
摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and a showerhead in which an inlet for supplying reaction gas into the chamber and an outlet for discharging the reaction gas supplied into the chamber are symmetrically disposed. The reaction gas flows within the chamber in a direction roughly parallel to that of the substrate.
摘要翻译：提供了一种基板处理装置。基板处理装置包括：进行相对于基板的处理的室，其上放置基板的基板支撑件，设置在该室内的基板支撑件，以及喷头，其中将用于将反应气体供应到室和用于排出供应到室中的反应气体的出口对称地布置。反应气体在室内沿与基板大致平行的方向流动。

8. 发明授权

US08312840B2 Substrate processing apparatus and method 有权
标题翻译：基板加工装置及方法
公开(公告)号：US08312840B2
公开(公告)日：2012-11-20
申请号：US12934385
申请日：2009-03-23
申请人： Il-Kwang Yang
发明人： Il-Kwang Yang
IPC分类号： C23C16/00 , C23C16/50
CPC分类号： C23C16/45591 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32449
摘要： Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a chamber (10) providing an internal space, in which a process is carried out onto a substrate; a gas supply unit (40) supplying a source gas to the internal space; a coil (16) generating an electric field in the internal space to generate plasma from the source gas; and an adjustment ring (50) disposed on a flow path of the plasma toward a support member to adjust the flow of the plasma. The chamber (10) includes a process chamber (12), in which the support member is provided and the process is carried out by the plasma; and a generation chamber (14), in which the plasma is generated by the coil (16), provided on the upper surface of the process chamber (12), and the adjustment ring (50) is installed at the lower end of the generation chamber (14).
摘要翻译：公开了一种基板处理装置和方法。基板处理装置包括提供内部空间的室（10），其中进行到基板上的处理; 将源气体供给到内部空间的气体供给单元（40）线圈（16），其在所述内部空间中产生电场以从所述源气体产生等离子体; 以及调节环（50），其设置在所述等离子体的流动路径上朝向支撑构件以调节所述等离子体的流动。所述腔室（10）包括处理室（12），所述处理室（12）中设置有所述支撑构件，并且所述过程由所述等离子体进行; 以及设置在处理室（12）的上表面上的由线圈（16）产生等离子体的发生室（14），并且调节环（50）安装在生成的下端室（14）。

9. 发明申请

US20110014397A1 APPARATUS AND METHOD FOR PROCESSING SUBSTRATE 审中-公开
标题翻译：装置和处理基板的方法
公开(公告)号：US20110014397A1
公开(公告)日：2011-01-20
申请号：US12867767
申请日：2009-02-20
申请人： Il-Kwang Yang
发明人： Il-Kwang Yang
IPC分类号： C23C16/50 , C23C16/00
CPC分类号： H01J37/32357 , C23C16/4405 , C23C16/452 , H01J37/3244
摘要： A substrate processing apparatus includes a chamber defining a process space where a process is carried out with respect to a substrate, a first supply member configured to supply a first source gas toward the process space, a plasma source configured to generate an electric field in the process space to create radicals from the first source gas, and a second supply member located below the first supply member for supplying a second source gas toward the substrate. A support member is installed in the chamber. The second supply member has a supply nozzle disposed, such that a lower end of the supply nozzle corresponds to a center of the substrate placed on the support member, for supplying the second source gas toward the center of the substrate.
摘要翻译：基板处理装置包括限定相对于基板进行处理的处理空间的室，被配置为朝向处理空间供给第一源气体的第一供应部件，被配置为在所述处理空间中产生电场的等离子体源处理空间以从第一源气体产生自由基，以及位于第一供应构件下方的用于向基板供应第二源气体的第二供应构件。支撑构件安装在腔室中。第二供给部件具有供给喷嘴，供给喷嘴的下端对应于放置在支撑部件上的基板的中心，用于朝向基板的中心供给第二源气体。

10. 发明申请

US20110028001A1 SUBSTRATE PROCESSING APPARATUS AND METHOD 有权
标题翻译：基板加工装置和方法
公开(公告)号：US20110028001A1
公开(公告)日：2011-02-03
申请号：US12934419
申请日：2009-03-27
申请人： Sung-Tae Je , Il-Kwang Yang , Chan-Yong Park
发明人： Sung-Tae Je , Il-Kwang Yang , Chan-Yong Park
IPC分类号： H01L21/46
CPC分类号： C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber (10) providing an internal space, in which a process is carried out onto a substrate; a support member (30) installed in the process chamber (10) to support the substrate; and a shower head (20) located above the support member (30) to supply a source gas toward the support member (30), wherein the shower head (20) includes a first injection surface (24) located at a position separated from the upper surface of the substrate by a first distance, and provided with outlets of first injection holes (24a) to inject the source gas; and a second injection surface (26) located at a position separated from the upper surface of the substrate by a second distance being different from the first distance, and provided with outlets of second injection holes (26a) to inject the source gas.
摘要翻译：公开了一种基板处理装置和方法。基板处理装置包括提供内部空间的处理室（10），其中进行到基板上的处理; 安装在所述处理室（10）中以支撑所述基板的支撑构件（30）以及位于所述支撑构件（30）上方以朝向所述支撑构件（30）供应源气体的淋浴喷头（20），其中所述喷淋头（20）包括位于与所述支撑构件（30）分离的位置的第一喷射表面（24）衬底的上表面第一距离，并且设置有用于喷射源气体的第一喷射孔（24a）的出口; 以及第二注入表面（26），其位于与所述基板的上表面隔开第二距离与所述第一距离不同的位置处，并且设置有用于喷射所述源气体的第二喷射孔（26a）的出口。

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