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1. 发明授权

US09564294B2 Plasma treatment apparatus and plasma antenna 有权
标题翻译：等离子体处理装置和等离子天线
公开(公告)号：US09564294B2
公开(公告)日：2017-02-07
申请号：US13126042
申请日：2009-10-26
申请人： Sang Ho Woo , Il Kwang Yang , Byung Gyu Song
发明人： Sang Ho Woo , Il Kwang Yang , Byung Gyu Song
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/3211 , H01J37/321 , H05H1/46
摘要： According to one embodiment of the present invention, a plasma treatment apparatus comprises: a chamber having an inner space in which processes for an object to be treated are performed; and an antenna which is arranged to cover the side part of the chamber, and which forms electric fields in said inner space to generate plasma from the source gas supplied in the inner space. The antenna includes a helical antenna which is formed into a helical shape from one side of the chamber toward the other side of the chamber along a first rotation direction, and which has a current flowing in the first rotation direction; an extension antenna which is connected to one end of the helical antenna positioned at said one side of the chamber, and which has a current flowing in the direction opposite to the first rotation direction; and a connection antenna for interconnecting the extension antenna and the helical antenna.
摘要翻译：根据本发明的一个实施例，等离子体处理装置包括：具有内部空间的室，在该内部空间中执行待处理物体的处理; 以及天线，其布置成覆盖所述室的侧部，并且在所述内部空间中形成电场，以从供应在所述内部空间中的所述源气体产生等离子体。天线包括螺旋天线，其从腔室的一侧朝向腔室的另一侧沿着第一旋转方向形成螺旋形状，并且具有沿第一旋转方向流动的电流; 延伸天线，其连接到位于所述室的所述一侧的所述螺旋天线的一端，并且具有沿与所述第一旋转方向相反的方向流动的电流; 以及用于互连扩展天线和螺旋天线的连接天线。

2. 发明申请

US20130180453A1 SUBSTRATE PROCESSING DEVICE EQUIPPED WITH SEMICIRCLE SHAPED ANTENNA 有权
标题翻译：衬底加工设备配有半成品天线
公开(公告)号：US20130180453A1
公开(公告)日：2013-07-18
申请号：US13822434
申请日：2011-10-06
申请人： Sung Tae Je , Il Kwang Yang , Byung Gyu Song , Song Hwan Park
发明人： Sung Tae Je , Il Kwang Yang , Byung Gyu Song , Song Hwan Park
IPC分类号： C23C16/50
CPC分类号： C23C16/50 , C23C16/4412 , C23C16/45504 , C23C16/45536 , C23C16/45563 , C23C16/507 , H01J37/3211 , H01J37/32449 , H01L21/02617 , H01L21/32105 , H01L21/3211 , H05H1/46 , H05H2001/4667
摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and an antenna disposed in an upper portion of the chamber to form an electric field within the chamber. The antenna includes a first antenna and a second antenna, which are disposed in rotational symmetry with respect to a preset center. The first antenna includes a first inner antenna and a first intermediate antenna which respectively have semi-circular shapes and first and second radii and are respectively disposed on one side and the other side with respect to the preset center line and a first connection antenna connecting the first inner antenna to the first intermediate antenna. The second antenna includes a second intermediate antenna and a second inner antenna which respectively have semi-circular shapes and have first and second radii and are respectively disposed on one side and the other side with respect to the center line and a second connection antenna connecting the second intermediate antenna to the second inner antenna.
摘要翻译：提供了一种基板处理装置。基板处理装置包括：进行相对于基板的处理的室，其上放置基板的基板支撑件，设置在该室内的基板支撑件，以及设置在该室的上部中的天线，以形成室内的电场。天线包括相对于预设中心旋转对称地设置的第一天线和第二天线。第一天线包括分别具有半圆形和第一和第二半径的第一内天线和第一中间天线，并且分别设置在相对于预设中心线的一侧和另一侧上，第一连接天线将第第一内天线到第一中间天线。第二天线包括分别具有半圆形并且具有第一和第二半径并且分别相对于中心线设置在一侧和另一侧的第二中间天线和第二内天线，以及连接第二天线第二中间天线到第二内天线。

3. 发明申请

US20130186337A1 SUBSTRATE PROCESSING DEVICE FOR SUPPLYING REACTION GAS THROUGH SYMMETRY-TYPE INLET AND OUTLET 审中-公开
标题翻译：用于通过对称型入口和出口提供反应气的基板处理装置
公开(公告)号：US20130186337A1
公开(公告)日：2013-07-25
申请号：US13822121
申请日：2011-10-06
申请人： Sung Tae Je , Il Kwang Yang , Byung Gyu Song , Song Hwan Park
发明人： Sung Tae Je , Il Kwang Yang , Byung Gyu Song , Song Hwan Park
IPC分类号： H01L21/02
CPC分类号： H01L21/02617 , C23C16/4412 , C23C16/45504 , C23C16/45536 , C23C16/45544 , C23C16/45563 , C23C16/507 , H01J37/32449 , H01L21/32105 , H01L21/3211
摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and a showerhead in which an inlet for supplying reaction gas into the chamber and an outlet for discharging the reaction gas supplied into the chamber are symmetrically disposed. The reaction gas flows within the chamber in a direction roughly parallel to that of the substrate.
摘要翻译：提供了一种基板处理装置。基板处理装置包括：进行相对于基板的处理的室，其上放置基板的基板支撑件，设置在该室内的基板支撑件，以及喷头，其中将用于将反应气体供应到室和用于排出供应到室中的反应气体的出口对称地布置。反应气体在室内沿与基板大致平行的方向流动。

4. 发明授权

US09416451B2 Substrate processing device equipped with semicircle shaped antenna 有权
标题翻译：衬底处理装置配有半圆形天线
公开(公告)号：US09416451B2
公开(公告)日：2016-08-16
申请号：US13822434
申请日：2011-10-06
申请人： Sung Tae Je , Il Kwang Yang , Byung Gyu Song , Song Hwan Park
发明人： Sung Tae Je , Il Kwang Yang , Byung Gyu Song , Song Hwan Park
IPC分类号： C23C16/50 , H01L21/02 , C23C16/455 , H01J37/32 , C23C16/507 , H01L21/321 , C23C16/44 , H05H1/46
CPC分类号： C23C16/50 , C23C16/4412 , C23C16/45504 , C23C16/45536 , C23C16/45563 , C23C16/507 , H01J37/3211 , H01J37/32449 , H01L21/02617 , H01L21/32105 , H01L21/3211 , H05H1/46 , H05H2001/4667
摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and an antenna disposed in an upper portion of the chamber to form an electric field within the chamber. The antenna includes a first antenna and a second antenna, which are disposed in rotational symmetry with respect to a preset center. The first antenna includes a first inner antenna and a first intermediate antenna which respectively have semi-circular shapes and first and second radii and are respectively disposed on one side and the other side with respect to the preset center line and a first connection antenna connecting the first inner antenna to the first intermediate antenna. The second antenna includes a second intermediate antenna and a second inner antenna which respectively have semi-circular shapes and have first and second radii and are respectively disposed on one side and the other side with respect to the center line and a second connection antenna connecting the second intermediate antenna to the second inner antenna.
摘要翻译：提供了一种基板处理装置。基板处理装置包括：进行相对于基板的处理的室，其上放置基板的基板支撑件，设置在该室内的基板支撑件，以及设置在该室的上部中的天线，以形成室内的电场。天线包括相对于预设中心旋转对称地设置的第一天线和第二天线。第一天线包括分别具有半圆形和第一和第二半径的第一内天线和第一中间天线，并且分别设置在相对于预设中心线的一侧和另一侧上，第一连接天线将第第一内天线到第一中间天线。第二天线包括分别具有半圆形并且具有第一和第二半径并且分别相对于中心线设置在一侧和另一侧的第二中间天线和第二内天线，以及连接第二天线第二中间天线到第二内部天线。

5. 发明申请

US20110198032A1 PLASMA TREATMENT APPARATUS AND PLASMA ANTENNA 有权
标题翻译：等离子体处理装置和等离子体天线
公开(公告)号：US20110198032A1
公开(公告)日：2011-08-18
申请号：US13126042
申请日：2009-10-26
申请人： Sang Ho Woo , Il Kwang Yang , Byung Gyu Song
发明人： Sang Ho Woo , Il Kwang Yang , Byung Gyu Song
IPC分类号： H05H1/24 , C23F1/08 , H01Q1/26
CPC分类号： H01J37/3211 , H01J37/321 , H05H1/46
摘要： According to one embodiment of the present invention, a plasma treatment apparatus comprises: a chamber having an inner space in which processes for an object to be treated are performed; and an antenna which is arranged to cover the side part of the chamber, and which forms electric fields in said inner space to generate plasma from the source gas supplied in the inner space. The antenna includes a helical antenna which is formed into a helical shape from one side of the chamber toward the other side of the chamber along a first rotation direction, and which has a current flowing in the first rotation direction; an extension antenna which is connected to one end of the helical antenna positioned at said one side of the chamber, and which has a current flowing in the direction opposite to the first rotation direction; and a connection antenna for interconnecting the extension antenna and the helical antenna.
摘要翻译：根据本发明的一个实施例，等离子体处理装置包括：具有内部空间的室，在该内部空间中执行待处理物体的处理; 以及天线，其布置成覆盖所述室的侧部，并且在所述内部空间中形成电场，以从供应在所述内部空间中的所述源气体产生等离子体。天线包括螺旋天线，其从腔室的一侧朝向腔室的另一侧沿着第一旋转方向形成螺旋形状，并且具有沿第一旋转方向流动的电流; 延伸天线，其连接到位于所述室的所述一侧的所述螺旋天线的一端，并且具有沿与所述第一旋转方向相反的方向流动的电流; 以及用于互连扩展天线和螺旋天线的连接天线。

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