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1. 发明授权

US09365920B2 Method for depositing film 有权
标题翻译：沉积膜的方法
公开(公告)号：US09365920B2
公开(公告)日：2016-06-14
申请号：US13061624
申请日：2009-08-24
申请人： Ichiro Shiono , Ekishu Nagae , Yousong Jiang , Takuya Sugawara
发明人： Ichiro Shiono , Ekishu Nagae , Yousong Jiang , Takuya Sugawara
IPC分类号： B05D3/00 , B05D3/06 , C23C14/02 , C03C17/42 , C03C19/00 , C23C14/34 , C23C14/56 , C23C14/00 , C23C14/50 , H01J37/34 , H01J37/32
CPC分类号： C23C14/022 , C03C17/42 , C03C19/00 , C03C2217/77 , C23C14/0078 , C23C14/3464 , C23C14/505 , C23C14/568 , H01J37/321 , H01J37/32422 , H01J37/32513 , H01J37/32633 , H01J37/32761 , H01J37/34
摘要： The method for depositing a film of the present invention comprises the first irradiation step of irradiating particles having energy on a surface of a substrate 101, the first film deposition step of depositing a first film 103 on the surface of the substrate 101 subjected to the first irradiation step by using a dry process, and the second film deposition step of depositing a second film 105 having oil repellency on a surface of the first film 103. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.
摘要翻译：本发明的膜的沉积方法包括：在基板101的表面上照射具有能量的颗粒的第一照射步骤，第一膜沉积步骤，在经受第一次的基板101的表面上沉积第一膜103 通过使用干法进行照射步骤，以及第二膜沉积步骤，在第一膜103的表面上沉积具有拒油性的第二膜105.根据本发明，一种用于沉积膜的方法，可以提供包括具有实际上足够水平的耐磨性的防油膜的防水衬底。

2. 发明授权

US09315415B2 Method for depositing film and oil-repellent substrate 有权
标题翻译：沉积薄膜和防油衬底的方法
公开(公告)号：US09315415B2
公开(公告)日：2016-04-19
申请号：US13059145
申请日：2009-08-24
申请人： Ichiro Shiono , Ekishu Nagae , Yousong Jiang , Takuya Sugawara
发明人： Ichiro Shiono , Ekishu Nagae , Yousong Jiang , Takuya Sugawara
IPC分类号： C23C14/08 , C23C14/24 , C23C14/58 , B05D5/08 , C03C17/42 , C23C14/22 , C23C14/06 , C23C14/12 , C23C14/54
CPC分类号： C23C16/56 , C03C17/42 , C03C2217/76 , C03C2217/77 , C03C2218/32 , C09D1/00 , C09D5/00 , C23C14/0652 , C23C14/08 , C23C14/12 , C23C14/22 , C23C14/221 , C23C14/24 , C23C14/541 , C23C14/5833 , Y10T428/265
摘要： The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.
摘要翻译：本发明的膜的沉积方法包括在基板101的表面上沉积具有高于基板101的硬度的硬度的第一膜103的第一膜沉积步骤，在基板101的表面上照射具有能量的颗粒的第一照射步骤第一膜103，以及在经受第一照射步骤的第一膜103的表面上沉积防油膜105的第二膜沉积步骤。根据本发明，可以提供一种用于沉积能够生产防油衬底的膜的方法，该方法包括具有实际足够水平的耐磨性的拒油膜。

3. 发明申请

US20130081942A1 Thin Film Formation Method and Thin Film Formation Apparatus 有权
标题翻译：薄膜形成方法和薄膜形成装置
公开(公告)号：US20130081942A1
公开(公告)日：2013-04-04
申请号：US13704568
申请日：2011-06-13
申请人： Yohei Hinata , Kyokuyo Sai , Yoshiyuki Otaki , Ichiro Shiono , Yousong Jiang
发明人： Yohei Hinata , Kyokuyo Sai , Yoshiyuki Otaki , Ichiro Shiono , Yousong Jiang
IPC分类号： C23C14/54
CPC分类号： C23C14/545 , C23C14/3464 , C23C14/3492 , C23C14/505 , C23C14/54 , C23C14/547 , G02B5/28
摘要： A thin film formation method is provided, by which needless film formation due to trial film formation is omitted and film formation efficiency can be improved. This invention is a method for sputtering targets to form a film A having an intended film thickness of T1 as the first thin film on a substrate and monitor substrate held and rotated by a rotation drum and, subsequently, furthermore sputtering the targets used in forming the film A to form a film C having an intended film thickness of T3 as the second thin film, which is another thin film having the same composition as the film A; comprising film thickness monitoring steps S4 and S5, a stopping step S7, an actual time acquisition step S8, an actual rate calculating step S9 and a necessary time calculating step S24.
摘要翻译：提供了一种薄膜形成方法，由此省略了由于试制成膜而形成的不必要的成膜，并且可以提高成膜效率。本发明是一种用于溅射靶材以形成具有预定的膜厚度T1作为第一薄膜的薄膜A的方法，该基材和由旋转滚筒保持和旋转的监测基板，随后进一步溅射形成膜A形成具有期望的膜厚度T3的膜C作为第二薄膜，其是具有与膜A相同组成的另一薄膜; 包括膜厚监测步骤S4和S5，停止步骤S7，实际时间获取步骤S8，实际速率计算步骤S9和必要时间计算步骤S24。

4. 发明申请

US20110262656A1 OPTICAL THIN-FILM VAPOR DEPOSITION APPARATUS AND OPTICAL THIN-FILM PRODUCTION METHOD 审中-公开
标题翻译：光学薄膜蒸发沉积装置和光薄膜生产方法
公开(公告)号：US20110262656A1
公开(公告)日：2011-10-27
申请号：US13179004
申请日：2011-07-08
申请人： Ekishu Nagae , Yousong Jiang , Ichiro Shiono , Tadayuki Shimizu , Tatsuya Hayashi , Makoto Furukawa , Takanori Murata
发明人： Ekishu Nagae , Yousong Jiang , Ichiro Shiono , Tadayuki Shimizu , Tatsuya Hayashi , Makoto Furukawa , Takanori Murata
IPC分类号： B05D3/06
CPC分类号： C23C14/22 , C23C14/083 , C23C14/10 , C23C14/221 , C23C14/225 , H01J2237/0041 , H01J2237/3132
摘要： A method of vapor depositing a vapor deposition substance onto substrates within a vacuum vessel includes holding the substrates with a dome shaped holder disposed within the vacuum vessel, rotating the dome shaped holder, vapor depositing a substance from a vapor deposition source disposed oppositely to the substrates, supplying ions from an ion source to the substrates, and supplying neutralizing electrons from a neutralizer to the substrates.
摘要翻译：将真空容器内的气相沉积物质气相沉积到基板上的方法包括：将基板保持在设置在真空容器内的圆顶形保持器，旋转圆顶形夹持器，从与基板相对设置的气相沉积源汽相沉积物质将离子源从离子源供给到衬底，并将中和电子从中和剂供给到衬底。

5. 发明申请

US20110151135A1 OPTICAL THIN-FILM DEPOSITION DEVICE AND OPTICAL THIN-FILM FABRICATION METHOD 有权
标题翻译：光学薄膜沉积装置和光学薄膜制造方法
公开(公告)号：US20110151135A1
公开(公告)日：2011-06-23
申请号：US13058557
申请日：2009-08-17
申请人： Ekishu Nagae , Yousong Jiang , Ichiro Shiono , Tadayuki Shimizu , Tatsuya Hayashi , Makoto Furukawa , Takanori Murata
发明人： Ekishu Nagae , Yousong Jiang , Ichiro Shiono , Tadayuki Shimizu , Tatsuya Hayashi , Makoto Furukawa , Takanori Murata
IPC分类号： C23C14/48
CPC分类号： C23C14/22 , C23C14/083 , C23C14/10 , C23C14/221 , C23C14/225 , H01J2237/0041 , H01J2237/3132
摘要： An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates (14) within a vacuum vessel (10). A dome shaped holder (12) is disposed within the vacuum vessel (10) and holds the substrates (14). A drive rotates the dome shaped holder (12). A vapor depositing source (34) is disposed oppositely to the substrates (14). An ion source (38) irradiates ions to the substrates (14). A neutralizer (40) irradiates electrons to the substrates (14). The ion source (38) is disposed at an angle between an axis, along which ions are irradiated from the ion source (38), and a line perpendicular to a surface of each of the substrates (14). The angle is between 8° inclusive and 40° inclusive. A ratio of a distance in a vertical direction between (i) a center of rotational axis of the dome shaped holder (12), and (ii) a center of the ion source (38), relative to a diameter of the dome shaped holder (12), is between 0.5 inclusive and 1.2 inclusive.
摘要翻译：光学薄膜蒸镀装置和方法能够通过将气相沉积物质蒸镀在真空容器（10）内的基板（14）上来制造光学薄膜。圆顶形保持器（12）设置在真空容器（10）内并保持基板（14）。驱动器旋转圆顶形保持器（12）。气相沉积源（34）与衬底（14）相对设置。离子源（38）将离子照射到衬底（14）上。中和器（40）将电子照射到衬底（14）上。离子源（38）以垂直于每个基板（14）的表面的线与离子源（38）照射的轴线之间成角度地设置。角度介于8°至40°之间。（i）圆顶状保持器（12）的旋转轴的中心与（ii）离子源（38）的中心之间的垂直方向上的距离相对于圆顶状保持器的直径的比例（12），介于0.5和0.5之间。

6. 发明授权

US07198997B2 Method for producing semiconductor substrate, method for producing field effect transistor, semiconductor substrate, and field effect transistor 有权
标题翻译：半导体衬底的制造方法，场效应晶体管的制造方法，半导体衬底和场效应晶体管
公开(公告)号：US07198997B2
公开(公告)日：2007-04-03
申请号：US10536445
申请日：2002-11-29
申请人： Ichiro Shiono , Masaharu Ninomiya , Hazumu Kougami
发明人： Ichiro Shiono , Masaharu Ninomiya , Hazumu Kougami
IPC分类号： H01L21/336
CPC分类号： H01L29/165 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L29/1054 , H01L29/155
摘要： In a semiconductor substrate, a field effect transistor, and methods for producing the same, in order to lower threading dislocation density and also to lower surface roughness, a step of repeating, a plurality of times, a process of epitaxially growing a SiGe gradient composition layer of which a Ge composition ratio is gradually increased from a Ge composition ratio of a base material and a process of epitaxially growing a SiGe constant-composition layer on the gradient composition layer at a final Ge composition ratio of the gradient composition layer, thereby depositing a SiGe layer of which a Ge composition ratio changes in a film deposition direction, in a step-like manner with a gradient, a heat treatment step of performing heat treatment at a temperature exceeding a temperature of the epitaxial growth either during or after formation of the SiGe layer, and a polishing step of polishing to remove irregularities on a surface of the SiGe layer which arise in the heat treatment after formation of the SiGe layer are included.
摘要翻译：为了降低穿透位错密度和降低表面粗糙度，在半导体衬底，场效应晶体管及其制造方法中，重复多次外延生长SiGe梯度组合物的步骤 Ge组成比从基材的Ge组成比逐渐增加的层和在梯度组合物层上以梯度组成层的最终Ge组成比外延生长SiGe恒定组成层的工艺的层，从而沉积在梯度上以阶梯状的方式，Ge组成比在膜沉积方向上变化的SiGe层，在形成时或之后在超过外延生长温度的温度下进行热处理的热处理步骤 SiGe层，以及抛光步骤，用于去除在热处理后产生的SiGe层的表面上的凹凸包括SiGe层的形成。

7. 发明申请

US20060258126A1 Semiconductor substrate, field-effect transistor, and their production methods 有权
标题翻译：半导体衬底，场效晶体管及其制作方法
公开(公告)号：US20060258126A1
公开(公告)日：2006-11-16
申请号：US10544310
申请日：2003-02-06
申请人： Ichiro Shiono , Masaharu Ninomiya , Hazumu Kougami
发明人： Ichiro Shiono , Masaharu Ninomiya , Hazumu Kougami
IPC分类号： H01L31/00 , H01L21/20
CPC分类号： H01L29/165 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L21/0262 , H01L29/1054
摘要： A semiconductor substrate manufacturing method has a first layer formation process, a second layer formation process, a heat treatment process, and a polishing process; in the first layer formation process, the thickness of the first SiGe layer is set to less than twice the critical thickness, which is the film thickness at which dislocations appear and lattice relaxation occurs due to increasing film thickness; in the second layer formation process, the Ge composition ratio of the second SiGe layer is at least at the contact face with the first SiGe layer or with the Si layer, set lower than the maximum value of the Ge composition ratio in the first SiGe layer, and moreover, a gradient composition region in at least a portion of which the Ge composition ratio increases gradually toward the surface is formed. By this means, the penetrating dislocation density is kept low, surface roughness is low, and worsening of roughness at the surface and at interfaces due to heat treatment in device manufacturing processes or similar is prevented.
摘要翻译：半导体衬底制造方法具有第一层形成工艺，第二层形成工艺，热处理工艺和抛光工艺; 在第一层形成工艺中，第一SiGe层的厚度被设定为小于临界厚度的两倍，临界厚度是由于增加膜厚而发生位错的膜厚度和晶格弛豫; 在第二层形成工艺中，第二SiGe层的Ge组成比至少在与第一SiGe层或Si层的接触面处设定为低于第一SiGe层中的Ge组成比的最大值，并且形成至少部分Ge组成比逐渐朝向表面增加的梯度组成区域。通过这种方式，穿透位错密度保持较低，表面粗糙度低，并且防止了器件制造过程中类似的热处理在表面和界面处的粗糙度恶化。

8. 发明申请

US20060022200A1 Method for producing semiconductor substrate and method for fabricating field effect transistor and semiconductor substrate and field effect transistor 有权
标题翻译：半导体基板的制造方法及场效应晶体管及半导体基板及场效应晶体管的制造方法
公开(公告)号：US20060022200A1
公开(公告)日：2006-02-02
申请号：US10536445
申请日：2002-11-29
申请人： Ichiro Shiono , Masaharu Ninomiya , Hazumu Kougami
发明人： Ichiro Shiono , Masaharu Ninomiya , Hazumu Kougami
IPC分类号： H01L29/16 , H01L21/20
CPC分类号： H01L29/165 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L29/1054 , H01L29/155
摘要： In a semiconductor substrate, a field effect transistor, and methods for producing the same, in order to lower threading dislocation density and also to lower surface roughness, a step of repeating, a plurality of times, a process of epitaxially growing a SiGe gradient composition layer of which a Ge composition ratio is gradually increased from a Ge composition ratio of a base material and a process of epitaxially growing a SiGe constant-composition layer on the gradient composition layer at a final Ge composition ratio of the gradient composition layer, thereby depositing a SiGe layer of which a Ge composition ratio changes in a film deposition direction, in a step-like manner with a gradient, a heat treatment step of performing heat treatment at a temperature exceeding a temperature of the epitaxial growth either during or after formation of the SiGe layer, and a polishing step of polishing to remove irregularities on a surface of the SiGe layer which arise in the heat treatment after formation of the SiGe layer are included.
摘要翻译：为了降低穿透位错密度和降低表面粗糙度，在半导体衬底，场效应晶体管及其制造方法中，重复多次外延生长SiGe梯度组合物的步骤 Ge组成比从基材的Ge组成比逐渐增加的层和在梯度组合物层上以梯度组成层的最终Ge组成比外延生长SiGe恒定组成层的工艺的层，从而沉积在梯度上以阶梯状的方式，Ge组成比在膜沉积方向上变化的SiGe层，在形成时或之后在超过外延生长温度的温度下进行热处理的热处理步骤 SiGe层，以及抛光步骤，用于去除在热处理后产生的SiGe层的表面上的凹凸包括SiGe层的形成。

9. 发明授权

US10415135B2 Thin film formation method and thin film formation apparatus 有权
公开(公告)号：US10415135B2
公开(公告)日：2019-09-17
申请号：US13704568
申请日：2011-06-13
申请人： Yohei Hinata , Kyokuyo Sai , Yoshiyuki Otaki , Ichiro Shiono , Yousong Jiang
发明人： Yohei Hinata , Kyokuyo Sai , Yoshiyuki Otaki , Ichiro Shiono , Yousong Jiang
IPC分类号： C23C14/54 , C23C14/34 , C23C14/50 , G02B5/28
摘要： A thin film formation method is provided, by which needless film formation due to trial film formation is omitted and film formation efficiency can be improved. This invention is a method for sputtering targets to form a film A having an intended film thickness of T1 as the first thin film on a substrate and monitor substrate held and rotated by a rotation drum and, subsequently, furthermore sputtering the targets used in forming the film A to form a film C having an intended film thickness of T3 as the second thin film, which is another thin film having the same composition as the film A; comprising film thickness monitoring steps S4 and S5, a stopping step S7, an actual time acquisition step S8, an actual rate calculating step S9 and a necessary time calculating step S24.

10. 发明授权

US09157146B2 Method for depositing silicon carbide film 有权
标题翻译：沉积碳化硅膜的方法
公开(公告)号：US09157146B2
公开(公告)日：2015-10-13
申请号：US13700695
申请日：2011-08-02
申请人： Takuya Sugawara , Hikaru Aoshima , Yousong Jiang , Ichiro Shiono , Ekishu Nagae
发明人： Takuya Sugawara , Hikaru Aoshima , Yousong Jiang , Ichiro Shiono , Ekishu Nagae
IPC分类号： C23C14/34 , C23C14/35 , C23C14/00 , C23C14/06 , C23C14/58 , G02B1/10
CPC分类号： C23C14/35 , C23C14/0078 , C23C14/0635 , C23C14/3464 , C23C14/5826 , G02B1/10
摘要： A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided. The film can be formed safely and efficiently in a short time and on a low heat resistance substrate. The method can include depositing a silicon carbide thin film on a moving substrate by using a film formation apparatus configured such that a reaction process region and film formation process regions are arranged spatially separated from one another in a vacuum container. Silicon targets can be sputtered in one region and carbon targets can be sputtered in another region. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate. Next, in another region, the interlayer thin film can be exposed to plasma generated in an atmosphere of a mixed gas including inert gas and hydrogen.
摘要翻译：提供了适用于光学用途的具有高透射率和高膜强度的碳化硅薄膜的成膜方法。该膜可以在短时间内和低耐热性基材上安全有效地形成。该方法可以包括通过使用成膜装置在移动的基板上沉积碳化硅薄膜，所述成膜装置被配置成使得反应处理区域和成膜处理区域在真空容器中彼此空间上分开布置。硅靶可以在一个区域溅射，并且碳靶可以在另一个区域溅射。由此，在基板上形成含有硅和碳的层间薄膜。接下来，在另一区域中，层间薄膜可以暴露于在包含惰性气体和氢气的混合气体的气氛中产生的等离子体。

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