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1. 发明申请

US20120070924A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20120070924A1
公开(公告)日：2012-03-22
申请号：US12976492
申请日：2010-12-22
申请人： Su Hyoung SON , Kyoung Jin Kim , Won Keun Cho , Eun Mi Ko , Hyung Sun Hwang
发明人： Su Hyoung SON , Kyoung Jin Kim , Won Keun Cho , Eun Mi Ko , Hyung Sun Hwang
IPC分类号： H01L33/44 , H01L33/50
CPC分类号： H01L33/007 , H01L33/22
摘要： Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon. The method comprises coating a substrate with photoresist; forming a mask pattern on the substrate by selectively removing the photoresist; forming protrusions on the substrate by dry-etching the substrate with the mask pattern through the use of etching gas; wet-etching the dry-etched substrate through the use of etching solution; forming a first semiconductor layer on the substrate including the protrusions; forming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer; etching predetermined portions of the active layer and second semiconductor layer until the first semiconductor layer is exposed; and forming a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer, and forming a second electrode on the second semiconductor layer.
摘要翻译：公开了一种半导体发光器件的制造方法，该半导体发光器件在干蚀刻工艺之后进行湿蚀刻工艺，以在其上形成氮化物半导体材料的衬底的表面中形成突起。该方法包括用光刻胶涂覆基底; 通过选择性地除去光致抗蚀剂在衬底上形成掩模图案; 通过使用蚀刻气体通过用掩模图案干蚀刻基板在基板上形成突起; 通过使用蚀刻溶液湿法蚀刻干蚀刻基板; 在包括所述突起的所述基板上形成第一半导体层; 在所述第一半导体层上形成有源层; 在所述有源层上形成第二半导体层; 蚀刻有源层和第二半导体层的预定部分直到暴露第一半导体层; 以及在所述第一半导体层的预定部分上形成第一电极，其中所述有源层和所述第二半导体层未形成在所述第一半导体层的所述预定部分上，并且在所述第二半导体层上形成第二电极。

2. 发明授权

US08298842B2 Method for manufacturing semiconductor light-emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08298842B2
公开(公告)日：2012-10-30
申请号：US12976492
申请日：2010-12-22
申请人： Su Hyoung Son , Kyoung Jin Kim , Won Keun Cho , Eun Mi Ko , Hyung Sun Hwang
发明人： Su Hyoung Son , Kyoung Jin Kim , Won Keun Cho , Eun Mi Ko , Hyung Sun Hwang
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L33/22
摘要： Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon. The method comprises coating a substrate with photoresist; forming a mask pattern on the substrate by selectively removing the photoresist; forming protrusions on the substrate by dry-etching the substrate with the mask pattern through the use of etching gas; wet-etching the dry-etched substrate through the use of etching solution; forming a first semiconductor layer on the substrate including the protrusions; forming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer; etching predetermined portions of the active layer and second semiconductor layer until the first semiconductor layer is exposed; and forming a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer, and forming a second electrode on the second semiconductor layer.
摘要翻译：公开了一种半导体发光器件的制造方法，该半导体发光器件在干蚀刻工艺之后进行湿蚀刻工艺，以在其上形成氮化物半导体材料的衬底的表面中形成突起。该方法包括用光刻胶涂覆基底; 通过选择性地除去光致抗蚀剂在衬底上形成掩模图案; 通过使用蚀刻气体通过用掩模图案干蚀刻基板在基板上形成突起; 通过使用蚀刻溶液湿法蚀刻干蚀刻基板; 在包括所述突起的所述基板上形成第一半导体层; 在所述第一半导体层上形成有源层; 在所述有源层上形成第二半导体层; 蚀刻有源层和第二半导体层的预定部分直到暴露第一半导体层; 以及在所述第一半导体层的预定部分上形成第一电极，其中所述有源层和所述第二半导体层未形成在所述第一半导体层的所述预定部分上，并且在所述第二半导体层上形成第二电极。

3. 发明申请

US20110303931A1 SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体发光二极管及其制造方法
公开(公告)号：US20110303931A1
公开(公告)日：2011-12-15
申请号：US12977502
申请日：2010-12-23
申请人： Ho-Jae KANG , Da-Woon Jung , Jong-Bin Kim , Hyung-Sun Hwang , Chung-Hoon Park
发明人： Ho-Jae KANG , Da-Woon Jung , Jong-Bin Kim , Hyung-Sun Hwang , Chung-Hoon Park
IPC分类号： H01L33/32 , H01L33/40
CPC分类号： H01L33/12 , H01L33/16 , H01L33/32
摘要： Disclosed are a semiconductor light emitting diode and a method for fabricating the same. The method comprises forming a crystalline nitride semiconductor layer on a substrate, forming an amorphous layer and a crystalline nitride semiconductor layer on the nitride semiconductor layer, forming an n-type nitride semiconductor layer on the crystalline nitride semiconductor layer, forming an active layer on the n-type nitride semiconductor layer, and forming a p-type nitride semiconductor layer on the active layer.
摘要翻译：公开了一种半导体发光二极管及其制造方法。该方法包括在衬底上形成结晶氮化物半导体层，在氮化物半导体层上形成非晶层和结晶氮化物半导体层，在结晶氮化物半导体层上形成n型氮化物半导体层，在其上形成有源层 n型氮化物半导体层，以及在有源层上形成p型氮化物半导体层。

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