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1. 发明申请

US20130037758A1 Preparation Method of Transition Metal Oxide and Carbon Nanotube Composite, and Composite Thereof 有权
标题翻译：过渡金属氧化物和碳纳米管复合材料及其复合材料的制备方法
公开(公告)号：US20130037758A1
公开(公告)日：2013-02-14
申请号：US13635872
申请日：2011-04-20
申请人： Kwang Bum Kim , Hyun Kyung Kim , Ji Young Kim
发明人： Kwang Bum Kim , Hyun Kyung Kim , Ji Young Kim
IPC分类号： H01M4/485 , H01M4/52 , H01M4/04 , H01M4/48 , B82Y40/00 , B82Y30/00
CPC分类号： H01M4/485 , B82Y30/00 , B82Y40/00 , C01B32/174 , H01M4/366 , H01M4/525 , H01M4/587 , H01M4/625 , H01M10/052 , Y02P70/54
摘要： Provided is a method of preparing a complex of a transition metal oxide and carbon nanotube. The method includes (a) dispersing carbon nanotube powder in a solvent, (b) mixing the dispersion with a transition metal salt, and (c) synthesizing a complex of transition metal oxide and carbon nanotube by applying microwave to the mixed solution. The method may considerably reduce the time required to synthesize the complex. In the complex of transition metal oxide and carbon nanotube prepared by the method, the transition metal oxide may be stacked on the surface of the carbon nanotube in the size of a nanoparticle, and may enhance charge/discharge characteristics when being applied to a lithium secondary battery as an anode material.
摘要翻译：提供了制备过渡金属氧化物和碳纳米管的络合物的方法。该方法包括（a）将碳纳米管粉末分散在溶剂中，（b）将分散体与过渡金属盐混合，（c）通过向混合溶液中施加微波合成过渡金属氧化物和碳纳米管的络合物。该方法可以大大减少合成复合物所需的时间。在通过该方法制备的过渡金属氧化物和碳纳米管的复合物中，过渡金属氧化物可以以纳米颗粒的尺寸堆叠在碳纳米管的表面上，并且可以在施加到锂二次体时增强充电/放电特性电池作为阳极材料。

2. 发明授权

US08258539B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08258539B2
公开(公告)日：2012-09-04
申请号：US12838031
申请日：2010-07-16
申请人： Seok Min Hwang , Hyun Kyung Kim , Kun Yoo Ko , Sang Su Hong , Kyu Han Lee , Bok Ki Min
发明人： Seok Min Hwang , Hyun Kyung Kim , Kun Yoo Ko , Sang Su Hong , Kyu Han Lee , Bok Ki Min
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.
摘要翻译：本发明涉及高输出氮化物发光器件。发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。

3. 发明授权

US08115142B2 Plate, apparatus for adjusting temperature of substrate having the plate and apparatus for processing substrate having the plate 有权
标题翻译：板，用于调节具有该板的基板的温度的装置和用于处理具有该板的基板的装置
公开(公告)号：US08115142B2
公开(公告)日：2012-02-14
申请号：US12169889
申请日：2008-07-09
申请人： Chang-Suk Oh , Hyun-Kyung Kim
发明人： Chang-Suk Oh , Hyun-Kyung Kim
IPC分类号： H05B3/68 , A21B2/00
CPC分类号： H01L21/67109
摘要： In a plate for adjusting a temperature of a substrate, a body of the plate supports the substrate. A first channel and a second channel are disposed within the body of the plate. The first channel has a first inlet and a first outlet and passes therethrough a first fluid to adjust the temperature of the substrate. The second channel has a second inlet adjacent to the first outlet and a second outlet adjacent to the first inlet and passes therethrough a second fluid to adjust the temperature of the substrate. Further, the first and second channels are disposed side by side. Thus, the temperature of the substrate may be adjusted uniformly as a whole.
摘要翻译：在用于调整基板的温度的板中，板的主体支撑基板。第一通道和第二通道设置在板的主体内。第一通道具有第一入口和第一出口，并通过其中的第一流体以调节基底的温度。第二通道具有邻近第一出口的第二入口和邻近第一入口的第二出口，并且通过第二入口通过第二流体以调节基底的温度。此外，第一和第二通道并排布置。因此，可以整体上均匀地调整基板的温度。

4. 发明授权

US07692201B2 Semiconductor light-emitting device with improved light extraction efficiency 有权
标题翻译：具有提高光提取效率的半导体发光器件
公开(公告)号：US07692201B2
公开(公告)日：2010-04-06
申请号：US11098802
申请日：2005-04-05
申请人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
发明人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要翻译：本发明提供一种半导体发光装置。发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

5. 发明授权

US07294864B2 Flip chip type nitride semiconductor light-emitting diode 有权
标题翻译：倒装芯片型氮化物半导体发光二极管
公开(公告)号：US07294864B2
公开(公告)日：2007-11-13
申请号：US10925934
申请日：2004-08-26
申请人： Dong Joon Kim , Hyun Kyung Kim
发明人： Dong Joon Kim , Hyun Kyung Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/387 , H01L33/44
摘要： A flip chip type nitride semiconductor light-emitting diode includes a light-transmissive substrate for growing nitride single crystals; an n-type nitride semiconductor layer formed on the light-transmissive substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a mesh-type dielectric layer formed on the p-type nitride semiconductor layer and having a mesh structure with a plurality of open regions in which the p-type nitride semiconductor layer is exposed; a highly reflective ohmic contact layer formed on the mesh-type dielectric layer and the open regions in which the p-type nitride semiconductor layer is exposed; and a p-bonding electrode and an n-electrode formed on the highly reflective ohmic contact layer and the n-type nitride semiconductor layer, respectively.
摘要翻译：倒装芯片型氮化物半导体发光二极管包括用于生长氮化物单晶的透光基板; 形成在所述透光性基板上的n型氮化物半导体层; 形成在所述n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在所述p型氮化物半导体层上并且具有其中露出所述p型氮化物半导体层的多个开放区域的网状结构的网状电介质层; 形成在网状介电层上的高反射欧姆接触层和露出p型氮化物半导体层的开放区域; 以及分别形成在高反射欧姆接触层和n型氮化物半导体层上的p型接合电极和n电极。

6. 发明授权

US06855348B2 Insecticidal composition derived from plants 失效
标题翻译：从植物衍生的杀虫组合物
公开(公告)号：US06855348B2
公开(公告)日：2005-02-15
申请号：US09942107
申请日：2001-08-28
申请人： Young-Joon Ahn , Young-Soo Kim , Soon-Il Kim , Hyun-Kyung Kim
发明人： Young-Joon Ahn , Young-Soo Kim , Soon-Il Kim , Hyun-Kyung Kim
IPC分类号： A01N31/04 , A01N35/02 , A01N35/04 , A01N47/46 , A61K36/31 , A61K36/54 , A01N65/00
CPC分类号： A01N65/00 , A01N31/04 , A01N35/02 , A01N35/04 , A01N47/46 , A01N65/08 , A01N65/10 , A01N65/24 , A01N2300/00
摘要： An insecticide composition is isolated from Paeonia suffruticosa, Cnidium officinale, Cinnamomum cassia, mustard (Brassica juncea) and horseradish (Cholearia aroracia) by using methanol or by elution with a solvent including hexane and ethyl acetate. The composition can be used to eradicate house dust mites and insects found in stored products.
摘要翻译：通过使用甲醇或用包括己烷和乙酸乙酯在内的溶剂洗脱，从芍药，芫荽，芥兰（芥菜）和辣根（黄芪）中分离出杀虫剂组合物。该组合物可用于根除存储产品中发现的房尘螨和昆虫。

7. 发明授权

US09640796B2 Preparation method of transition metal oxide and carbon nanotube composite, and composite thereof 有权
公开(公告)号：US09640796B2
公开(公告)日：2017-05-02
申请号：US13635872
申请日：2011-04-20
申请人： Kwang Bum Kim , Hyun Kyung Kim , Ji Young Kim
发明人： Kwang Bum Kim , Hyun Kyung Kim , Ji Young Kim
IPC分类号： C01B31/02 , H01B1/04 , H01M4/485 , B82Y30/00 , B82Y40/00 , H01M4/36 , H01M4/62 , H01M4/525 , H01M4/587 , H01M10/052
CPC分类号： H01M4/485 , B82Y30/00 , B82Y40/00 , C01B32/174 , H01M4/366 , H01M4/525 , H01M4/587 , H01M4/625 , H01M10/052 , Y02P70/54
摘要： Provided is a method of preparing a complex of a transition metal oxide and carbon nanotube. The method includes (a) dispersing carbon nanotube powder in a solvent, (b) mixing the dispersion with a transition metal salt, and (c) synthesizing a complex of transition metal oxide and carbon nanotube by applying microwave to the mixed solution. The method may considerably reduce the time required to synthesize the complex. In the complex of transition metal oxide and carbon nanotube prepared by the method, the transition metal oxide may be stacked on the surface of the carbon nanotube in the size of a nanoparticle, and may enhance charge/discharge characteristics when being applied to a lithium secondary battery as an anode material.

8. 发明申请

US20140228230A1 RESISTANCE GENE TO XANTHOMONAS AXONOPODIS IN SOYBEANS 审中-公开
标题翻译：大豆中XANTHOMONAS AXONOPODIS的抗性基因
公开(公告)号：US20140228230A1
公开(公告)日：2014-08-14
申请号：US14118494
申请日：2011-10-31
申请人： Sung Yun Kim , Yong Chul Kim , Hyun Kyung Kim , Jung Min Kim , In Soo Choi , Young Whan Choi , Jum Soon Kang , Sun Tae Kim , Young Hoon Park , Keun Ki Kim , Ki Won Oh , Young Hoon Lee , Chan Sik Jung , Jong Mim Ko , In Youl Baek , Keum Yong Park , Hee Yeong Chung
发明人： Sung Yun Kim , Yong Chul Kim , Hyun Kyung Kim , Jung Min Kim , In Soo Choi , Young Whan Choi , Jum Soon Kang , Sun Tae Kim , Young Hoon Park , Keun Ki Kim , Ki Won Oh , Young Hoon Lee , Chan Sik Jung , Jong Mim Ko , In Youl Baek , Keum Yong Park , Hee Yeong Chung
IPC分类号： C12Q1/68
CPC分类号： C12Q1/6895 , A01H1/04 , A01H5/10 , C12Q2600/112
摘要： The present invention relates to a marker composition for diagnosing resistance to bacterial blight of soybean; a composition for diagnosing resistance to bacterial blight of soybean, comprising a primer which specifically binds to a marker gene; a diagnostic kit for diagnosing resistance to bacterial blight of soybean, comprising the composition; and a method for diagnosing resistance to bacterial blight of soybean. As described above, with the use of the marker gene for diagnosing resistance to bacterial blight of soybean according to the present invention, it is possible to breed varieties that are resistant to bacterial blight of soybean, thus providing disease-resistant and high-quality, superior varieties.
摘要翻译：本发明涉及用于诊断大豆细菌性病害抗性的标记组合物; 用于诊断大豆细菌性枯萎病的组合物，其包含特异性结合标记基因的引物; 用于诊断大豆细菌性病害抗性的诊断试剂盒，其包含所述组合物; 以及用于诊断大豆细菌性枯萎病的方法。如上所述，利用本发明的用于诊断大豆细菌性病害抗性的标记基因，可以培育抗大豆细菌性病害的品种，从而提供抗病性和高品质，优良品种。

9. 发明授权

US08643299B2 LED lamp and driving circuit for the same 失效
标题翻译： LED灯和驱动电路相同
公开(公告)号：US08643299B2
公开(公告)日：2014-02-04
申请号：US13078396
申请日：2011-04-01
申请人： Yong Keun Jee , Byung Kwan Song , Yun Whan Na , Jin Jong Kim , Sun Woo Im , Seok Kyu Kim , Hyun Kyung Kim
发明人： Yong Keun Jee , Byung Kwan Song , Yun Whan Na , Jin Jong Kim , Sun Woo Im , Seok Kyu Kim , Hyun Kyung Kim
IPC分类号： H05B37/02 , F21V19/00
CPC分类号： H05B33/0845 , H05B33/0887
摘要： An LED lamp driving circuit includes: a thermistor having one terminal through which an external voltage is applied; an AC-DC conversion unit connected to the other terminal of the thermistor and converting an AC voltage applied to the other terminal of the thermistor into a DC voltage; and a DC-DC conversion unit converting the DC voltage from the AC-DC conversion unit into a DC voltage required to drive the LED lamp.
摘要翻译： LED灯驱动电路包括：具有一个端子的热敏电阻，通过该端子施加外部电压; 连接到所述热敏电阻的另一端的AC-DC转换单元，将施加到所述热敏电阻的另一端的交流电压转换为直流电压; 以及将来自AC-DC转换单元的DC电压转换为驱动LED灯所需的DC电压的DC-DC转换单元。

10. 发明申请

US20120038289A1 LED LAMP AND DRIVING CIRCUIT FOR THE SAME 失效
标题翻译： LED灯和驱动电路
公开(公告)号：US20120038289A1
公开(公告)日：2012-02-16
申请号：US13078396
申请日：2011-04-01
申请人： Yong Keun Jee , Byung Kwan Song , Yun Whan Na , Jin Jong Kim , Sun Woo Im , Seok Kyu Kim , Hyun Kyung Kim
发明人： Yong Keun Jee , Byung Kwan Song , Yun Whan Na , Jin Jong Kim , Sun Woo Im , Seok Kyu Kim , Hyun Kyung Kim
IPC分类号： H05B37/02 , F21V19/00
CPC分类号： H05B33/0845 , H05B33/0887
摘要： An LED lamp driving circuit includes: a thermistor having one terminal through which an external voltage is applied; an AC-DC conversion unit connected to the other terminal of the thermistor and converting an AC voltage applied to the other terminal of the thermistor into a DC voltage; and a DC-DC conversion unit converting the DC voltage from the AC-DC conversion unit into a DC voltage required to drive the LED lamp.
摘要翻译： LED灯驱动电路包括：具有一个端子的热敏电阻，通过该端子施加外部电压; 连接到所述热敏电阻的另一端的AC-DC转换单元，将施加到所述热敏电阻的另一端的交流电压转换为直流电压; 以及将来自AC-DC转换单元的DC电压转换为驱动LED灯所需的DC电压的DC-DC转换单元。

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