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1. 发明申请

US20080205595A1 Method of Measuring Thickness of Thin Film Using Microwave 失效
标题翻译：使用微波测量薄膜厚度的方法
公开(公告)号：US20080205595A1
公开(公告)日：2008-08-28
申请号：US11994247
申请日：2006-09-28
申请人： Sang Young Lee , Jae Hun Lee , Hyun Kyung Han , Sang Geun Lee , Byung Woo Park
发明人： Sang Young Lee , Jae Hun Lee , Hyun Kyung Han , Sang Geun Lee , Byung Woo Park
IPC分类号： G01B15/02
CPC分类号： G01B15/025
摘要： The present invention relates to a thickness measurement method for thin films using microwaves. In the method, the Q-factors of a dielectric resonator are measured. The effective surface resistance (RSeff) of a superconductor or a conductor film and the loss tangent of a dielectric are determined using the Q-factor. The penetration depth λ for the superconductor film is measured using a dielectric resonator with a small gap between the superconductor film at the top of the resonator and the rest. The intrinsic surface resistance of superconductor films for calibration is determined using the measured RSeff and λ while the intrinsic surface resistance of a conductor film for calibration is determined using the measured RSeff and the nature of the intrinsic surface resistance being equal to the intrinsic surface reactance. The thickness of a superconductor or a conductor film is measured using a relation between the RSeff and the calibrated intrinsic surface resistance for superconductor films or conductor films.
摘要翻译：本发明涉及使用微波的薄膜的厚度测量方法。在该方法中，测量介质谐振器的Q因子。使用Q因子确定超导体或导体膜的有效表面电阻（R sub S eff）和电介质的损耗角正切。超导薄膜的穿透深度λ是使用在谐振器顶部的超导薄膜与其余部分之间具有小间隙的介质谐振器来测量的。用于校准的超导体膜的固有表面电阻是使用测量的R S S O SUP和λ确定的，而用于校准的导体膜的固有表面电阻是使用测量的R 本征表面电阻的性质等于固有表面电抗。使用超导体膜或导体膜的校准固有表面电阻之间的关系来测量超导体或导体膜的厚度。

2. 发明申请

US20090146300A1 Semiconductor packages and electronic products employing the same 审中-公开
标题翻译：半导体封装和采用其的电子产品
公开(公告)号：US20090146300A1
公开(公告)日：2009-06-11
申请号：US12292569
申请日：2008-11-21
申请人： Se-Young Yang , Ho-Jeong Moon , Seung-Woo Kim , Hyun Kyung Han
发明人： Se-Young Yang , Ho-Jeong Moon , Seung-Woo Kim , Hyun Kyung Han
IPC分类号： H01L23/498
CPC分类号： H01L23/4985 , H01L23/3114 , H01L23/3128 , H01L23/49816 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00014 , H01L2924/00 , H01L2224/05599
摘要： Example embodiments of a semiconductor package are provided. In accordance with an example embodiment, a semiconductor package may include an external terminal connected to a concave surface of a bottom pad, wherein the bottom pad is recessed into a substrate. In accordance with another example embodiment, a semiconductor package may include at least one external terminal, a flexible substrate having a first surface with a plurality of convex portions and a second surface opposite the first surface having a plurality of concave portions, wherein the at least one terminal is recessed into the substrate and at least one of the concave portions surrounds a portion of the at least one external terminal.
摘要翻译：提供半导体封装的示例性实施例。根据示例性实施例，半导体封装可以包括连接到底部焊盘的凹面的外部端子，其中底部焊盘凹入基板。根据另一示例性实施例，半导体封装可以包括至少一个外部端子，具有多个凸部的第一表面的柔性基板和具有多个凹部的与第一表面相对的第二表面，其中至少一个端子凹陷到基板中，并且至少一个凹部围绕至少一个外部端子的一部分。

3. 发明授权

US07535236B2 Method of measuring thickness of thin film using microwave 失效
标题翻译：使用微波测量薄膜厚度的方法
公开(公告)号：US07535236B2
公开(公告)日：2009-05-19
申请号：US11994247
申请日：2006-09-28
申请人： Sang Young Lee , Jae Hun Lee , Hyun Kyung Han , Sang Geun Lee , Byung Woo Park
发明人： Sang Young Lee , Jae Hun Lee , Hyun Kyung Han , Sang Geun Lee , Byung Woo Park
IPC分类号： G01R27/04 , G01R27/32
CPC分类号： G01B15/025
摘要： The present invention relates to a thickness measurement method for thin films using microwaves. In the method, the Q-factors of a dielectric resonator are measured. The effective surface resistance (RSeff) of a superconductor or a conductor film and the loss tangent of a dielectric are determined using the Q-factor. The penetration depth λ for the superconductor film is measured using a dielectric resonator with a small gap between the superconductor film at the top of the resonator and the rest. The intrinsic surface resistance of superconductor films for calibration is determined using the measured RSeff and λ while the intrinsic surface resistance of a conductor film for calibration is determined using the measured RSeff and the nature of the intrinsic surface resistance being equal to the intrinsic surface reactance. The thickness of a superconductor or a conductor film is measured using a relation between the RSeff and the calibrated intrinsic surface resistance for superconductor films or conductor films.
摘要翻译：本发明涉及使用微波的薄膜的厚度测量方法。在该方法中，测量介质谐振器的Q因子。使用Q因子确定超导体或导体膜的有效表面电阻（RSeff）和电介质的损耗角正切。超导薄膜的穿透深度λ是使用在谐振器顶部的超导薄膜与其余部分之间具有小间隙的介质谐振器来测量的。使用测量的RSeff和λ测定用于校准的超导体膜的固有表面电阻，而使用所测量的RSeff和本征表面电阻的性质等于固有表面电抗确定用于校准的导体膜的固有表面电阻。使用超导体膜或导体膜的RSeff与校正的固有表面电阻之间的关系来测量超导体或导体膜的厚度。

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